Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations7 characterizations6 properties9 figures
2 preparations5 characterizations1 property7 figures
2 preparations5 characterizations2 properties3 figures
1 preparation1 characterization2 figures
2 preparations1 characterization2 properties1 figure
2 preparations1 characterization4 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Layer Thickness | monolayer thickness | 0.9nm | — | |||
| Dopant Concentration | Fe doping concentration | 4% | — | |||
| Raman Peak | A1g | 401.4cm⁻¹ | — | |||
| Raman Peak | A1g | 404.4cm⁻¹ | — | |||
| Pl Peak Intensity | A-exciton / overall PL intensity | reduced | — | |||
| Domain Alignment Fraction | unidirectional alignment | 99% | — | |||
| Sheet Crystallinity | single-crystal feature | single-crystal | — | |||
| Electron Diffraction Pattern Uniformity | LEED orientation consistency | nearly identical lattice orientation across scanned regions | — | |||
| Fet Mobility | electron mobility | 86cm²/Vs | — | |||
| Fet On Off Ratio | on/off current ratio | 100000000 | — | |||
| Contact Resistance | contact resistance | 489ohm um | — | |||
| Ohmic Contact | contact behavior | true | — | |||
| Xps Binding Energy | Fe 2p | 712.7eV | — |
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations7 characterizations6 properties9 figures
2 preparations5 characterizations1 property7 figures
2 preparations5 characterizations2 properties3 figures
1 preparation1 characterization2 figures
2 preparations1 characterization2 properties1 figure
2 preparations1 characterization4 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Layer Thickness | monolayer thickness | 0.9nm | — | |||
| Dopant Concentration | Fe doping concentration | 4% | — | |||
| Raman Peak | A1g | 401.4cm⁻¹ | — | |||
| Raman Peak | A1g | 404.4cm⁻¹ | — | |||
| Pl Peak Intensity | A-exciton / overall PL intensity | reduced | — | |||
| Domain Alignment Fraction | unidirectional alignment | 99% | — | |||
| Sheet Crystallinity | single-crystal feature | single-crystal | — | |||
| Electron Diffraction Pattern Uniformity | LEED orientation consistency | nearly identical lattice orientation across scanned regions | — | |||
| Fet Mobility | electron mobility | 86cm²/Vs | — | |||
| Fet On Off Ratio | on/off current ratio | 100000000 | — | |||
| Contact Resistance | contact resistance | 489ohm um | — | |||
| Ohmic Contact | contact behavior | true | — | |||
| Xps Binding Energy | Fe 2p | 712.7eV | — |
Related documents with shared materials, methods, properties, or citations.
Janus-induced atomic reconstruction amplifies twist-angle modulation of interlayer thermal transport in moiré bilayers
Quasi 1D MoS2 Nanoribbons with Enhanced Edge Nonlinear Response and Photoresponsivity
On-liquid-gallium surface synthesis of ultra-smooth conductive metal-organic framework thin films
Vanadium-Doped Molybdenum Disulfide Monolayers with Tunable Electronic and Magnetic Properties: Do Vanadium-Vacancy Pairs Matter?
Cu Intercalation-stabilized 1T’ MoS2 with Electrical Insulating Behavior
Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics
Probing the Relationship between Defects and Enhanced Mobility in MoS2 Monolayers Grown by Mo Foil
Sliding ferroelectric memories and synapses
Mo Atom Rearrangement Drives Layer-Dependent Reactivity in Two-Dimensional MoS2
Dative epitaxy of commensurate monocrystalline covalent-van der Waals moiré supercrystal
A Facile Strategy for the Growth of High-Quality Tungsten Disulfide Crystals Mediated by Oxygen-Deficient Oxide Precursors
CMOS-compatible Strain Engineering for High-Performance Monolayer Semiconductor Transistors
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations7 characterizations6 properties9 figures
2 preparations5 characterizations1 property7 figures
2 preparations5 characterizations2 properties3 figures
1 preparation1 characterization2 figures
2 preparations1 characterization2 properties1 figure
2 preparations1 characterization4 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Layer Thickness | monolayer thickness | 0.9nm | — | |||
| Dopant Concentration | Fe doping concentration | 4% | — | |||
| Raman Peak | A1g | 401.4cm⁻¹ | — | |||
| Raman Peak | A1g | 404.4cm⁻¹ | — | |||
| Pl Peak Intensity | A-exciton / overall PL intensity | reduced | — | |||
| Domain Alignment Fraction | unidirectional alignment | 99% | — | |||
| Sheet Crystallinity | single-crystal feature | single-crystal | — | |||
| Electron Diffraction Pattern Uniformity | LEED orientation consistency | nearly identical lattice orientation across scanned regions | — | |||
| Fet Mobility | electron mobility | 86cm²/Vs | — | |||
| Fet On Off Ratio | on/off current ratio | 100000000 | — | |||
| Contact Resistance | contact resistance | 489ohm um | — | |||
| Ohmic Contact | contact behavior | true | — | |||
| Xps Binding Energy | Fe 2p | 712.7eV | — |
Related documents with shared materials, methods, properties, or citations.
Janus-induced atomic reconstruction amplifies twist-angle modulation of interlayer thermal transport in moiré bilayers
Quasi 1D MoS2 Nanoribbons with Enhanced Edge Nonlinear Response and Photoresponsivity
On-liquid-gallium surface synthesis of ultra-smooth conductive metal-organic framework thin films
Vanadium-Doped Molybdenum Disulfide Monolayers with Tunable Electronic and Magnetic Properties: Do Vanadium-Vacancy Pairs Matter?
Cu Intercalation-stabilized 1T’ MoS2 with Electrical Insulating Behavior
Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics
Probing the Relationship between Defects and Enhanced Mobility in MoS2 Monolayers Grown by Mo Foil
Sliding ferroelectric memories and synapses
Mo Atom Rearrangement Drives Layer-Dependent Reactivity in Two-Dimensional MoS2
Dative epitaxy of commensurate monocrystalline covalent-van der Waals moiré supercrystal
A Facile Strategy for the Growth of High-Quality Tungsten Disulfide Crystals Mediated by Oxygen-Deficient Oxide Precursors
CMOS-compatible Strain Engineering for High-Performance Monolayer Semiconductor Transistors
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations7 characterizations6 properties9 figures
2 preparations5 characterizations1 property7 figures
2 preparations5 characterizations2 properties3 figures
1 preparation1 characterization2 figures
2 preparations1 characterization2 properties1 figure
2 preparations1 characterization4 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Layer Thickness | monolayer thickness | 0.9nm | — | |||
| Dopant Concentration | Fe doping concentration | 4% | — | |||
| Raman Peak | A1g | 401.4cm⁻¹ | — | |||
| Raman Peak | A1g | 404.4cm⁻¹ | — | |||
| Pl Peak Intensity | A-exciton / overall PL intensity | reduced | — | |||
| Domain Alignment Fraction | unidirectional alignment | 99% | — | |||
| Sheet Crystallinity | single-crystal feature | single-crystal | — | |||
| Electron Diffraction Pattern Uniformity | LEED orientation consistency | nearly identical lattice orientation across scanned regions | — | |||
| Fet Mobility | electron mobility | 86cm²/Vs | — | |||
| Fet On Off Ratio | on/off current ratio | 100000000 | — | |||
| Contact Resistance | contact resistance | 489ohm um | — | |||
| Ohmic Contact | contact behavior | true | — | |||
| Xps Binding Energy | Fe 2p | 712.7eV | — |
Related documents with shared materials, methods, properties, or citations.
Janus-induced atomic reconstruction amplifies twist-angle modulation of interlayer thermal transport in moiré bilayers
Quasi 1D MoS2 Nanoribbons with Enhanced Edge Nonlinear Response and Photoresponsivity
On-liquid-gallium surface synthesis of ultra-smooth conductive metal-organic framework thin films
Vanadium-Doped Molybdenum Disulfide Monolayers with Tunable Electronic and Magnetic Properties: Do Vanadium-Vacancy Pairs Matter?
Cu Intercalation-stabilized 1T’ MoS2 with Electrical Insulating Behavior
Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics
Probing the Relationship between Defects and Enhanced Mobility in MoS2 Monolayers Grown by Mo Foil
Sliding ferroelectric memories and synapses
Mo Atom Rearrangement Drives Layer-Dependent Reactivity in Two-Dimensional MoS2
Dative epitaxy of commensurate monocrystalline covalent-van der Waals moiré supercrystal
A Facile Strategy for the Growth of High-Quality Tungsten Disulfide Crystals Mediated by Oxygen-Deficient Oxide Precursors
CMOS-compatible Strain Engineering for High-Performance Monolayer Semiconductor Transistors
