Cu Intercalation-stabilized 1T’ MoS2 with Electrical Insulating Behavior

Huiyu Nong; Junyang Tan; Yujie Sun; Rongjie Zhang; Yue Gu; Qiang Wei; Jingwei Wang; Yunhao Zhang; Qinke Wu; Xiaolong Zou; Bilu Liu

doi:10.1073/pnas.0502848102

Research paper

Experimental GrowthExperimental Characterization

Cu Intercalation-stabilized 1T’ MoS₂ with Electrical Insulating Behavior

Huiyu Nong, Junyang Tan, Yujie Sun, Rongjie Zhang et al.

2025

Research paper

Experimental GrowthExperimental Characterization

Cu Intercalation-stabilized 1T’ MoS₂ with Electrical Insulating Behavior

Huiyu Nong, Junyang Tan, Yujie Sun, Rongjie Zhang et al.

2025

Research paper

Experimental GrowthExperimental Characterization

Cu Intercalation-stabilized 1T’ MoS₂ with Electrical Insulating Behavior

Huiyu Nong, Junyang Tan, Yujie Sun, Rongjie Zhang et al.

2025

Research paper

Experimental GrowthExperimental Characterization

Cu Intercalation-stabilized 1T’ MoS₂ with Electrical Insulating Behavior

Huiyu Nong, Junyang Tan, Yujie Sun, Rongjie Zhang et al.

2025

Research paper

Experimental GrowthExperimental Characterization

Cu Intercalation-stabilized 1T’ MoS₂ with Electrical Insulating Behavior

Huiyu Nong, Junyang Tan, Yujie Sun, Rongjie Zhang et al.

2025

Research paper

Experimental GrowthExperimental Characterization

Cu Intercalation-stabilized 1T’ MoS₂ with Electrical Insulating Behavior

Huiyu Nong, Junyang Tan, Yujie Sun, Rongjie Zhang et al.

2025

Research paper

Experimental GrowthExperimental Characterization

Cu Intercalation-stabilized 1T’ MoS₂ with Electrical Insulating Behavior

Huiyu Nong, Junyang Tan, Yujie Sun, Rongjie Zhang et al.

2025

Research paper

Experimental GrowthExperimental Characterization

Cu Intercalation-stabilized 1T’ MoS₂ with Electrical Insulating Behavior

Huiyu Nong, Junyang Tan, Yujie Sun, Rongjie Zhang et al.

2025

As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substrate.

1 preparation3 characterizations10 properties4 figures

ExperimentalMoS₂Studied MaterialAl₂O₃Substrate / Dielectric

Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercalation of as-grown 1T’ MoS2.

1 preparation5 characterizations11 properties7 figures

ExperimentalMoS₂Studied MaterialCuPrecursorAl₂O₃Substrate / Dielectric

As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substrate.

1 preparation3 characterizations10 properties4 figures

ExperimentalMoS₂Studied MaterialAl₂O₃Substrate / Dielectric

Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercalation of as-grown 1T’ MoS2.

1 preparation5 characterizations11 properties7 figures

ExperimentalMoS₂Studied MaterialCuPrecursorAl₂O₃Substrate / Dielectric

As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substrate.

1 preparation3 characterizations10 properties4 figures

ExperimentalMoS₂Studied MaterialAl₂O₃Substrate / Dielectric

Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercalation of as-grown 1T’ MoS2.

1 preparation5 characterizations11 properties7 figures

ExperimentalMoS₂Studied MaterialCuPrecursorAl₂O₃Substrate / Dielectric

As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substrate.

1 preparation3 characterizations10 properties4 figures

ExperimentalMoS₂Studied MaterialAl₂O₃Substrate / Dielectric

Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercalation of as-grown 1T’ MoS2.

1 preparation5 characterizations11 properties7 figures

ExperimentalMoS₂Studied MaterialCuPrecursorAl₂O₃Substrate / Dielectric

Type	Label	Value	Material	Sample	Source
Xrd Peak Two Theta	(003)	14.82deg	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Xrd Peak Two Theta	(003)	14.03deg	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Xrd D Spacing	interlayer spacing	6angstrom	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Xrd D Spacing	interlayer spacing	6.3angstrom	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Substrate Thickness	flake thickness	1.57nm	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Substrate Thickness	flake thickness	9.7nm	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Raman Peak	mode	146cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	mode	206cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	mode	276cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	mode	323cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	mode	401cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	mode	158cm⁻¹	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Raman Peak	mode	260cm⁻¹	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Raman Peak	mode	315cm⁻¹	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Raman Peak	E2g	380cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	E2g	380cm⁻¹	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Raman Intensity Ratio	I(T)/I₀	decreases significantly above 80°C	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Intensity Ratio	I(T)/I₀	decreases only above 300°C	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Atomic Ratio	Cu atomic ratio	0.08	Cu	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Transport Behavior	electrical behavior	insulating hopping transport	MoS₂ Cu	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Temperature Coefficient Of Resistance	TCR	-4 ~ -2%·K⁻¹	MoS₂ Cu	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—

Type	Label	Value	Material	Sample	Source
Xrd Peak Two Theta	(003)	14.82deg	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Xrd Peak Two Theta	(003)	14.03deg	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Xrd D Spacing	interlayer spacing	6angstrom	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Xrd D Spacing	interlayer spacing	6.3angstrom	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Substrate Thickness	flake thickness	1.57nm	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Substrate Thickness	flake thickness	9.7nm	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Raman Peak	mode	146cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	mode	206cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	mode	276cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	mode	323cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	mode	401cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	mode	158cm⁻¹	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Raman Peak	mode	260cm⁻¹	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Raman Peak	mode	315cm⁻¹	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Raman Peak	E2g	380cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	E2g	380cm⁻¹	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Raman Intensity Ratio	I(T)/I₀	decreases significantly above 80°C	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Intensity Ratio	I(T)/I₀	decreases only above 300°C	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Atomic Ratio	Cu atomic ratio	0.08	Cu	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Transport Behavior	electrical behavior	insulating hopping transport	MoS₂ Cu	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Temperature Coefficient Of Resistance	TCR	-4 ~ -2%·K⁻¹	MoS₂ Cu	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—

Type	Label	Value	Material	Sample	Source
Xrd Peak Two Theta	(003)	14.82deg	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Xrd Peak Two Theta	(003)	14.03deg	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Xrd D Spacing	interlayer spacing	6angstrom	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Xrd D Spacing	interlayer spacing	6.3angstrom	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Substrate Thickness	flake thickness	1.57nm	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Substrate Thickness	flake thickness	9.7nm	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Raman Peak	mode	146cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	mode	206cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	mode	276cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	mode	323cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	mode	401cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	mode	158cm⁻¹	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Raman Peak	mode	260cm⁻¹	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Raman Peak	mode	315cm⁻¹	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Raman Peak	E2g	380cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	E2g	380cm⁻¹	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Raman Intensity Ratio	I(T)/I₀	decreases significantly above 80°C	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Intensity Ratio	I(T)/I₀	decreases only above 300°C	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Atomic Ratio	Cu atomic ratio	0.08	Cu	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Transport Behavior	electrical behavior	insulating hopping transport	MoS₂ Cu	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Temperature Coefficient Of Resistance	TCR	-4 ~ -2%·K⁻¹	MoS₂ Cu	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—

Type	Label	Value	Material	Sample	Source
Xrd Peak Two Theta	(003)	14.82deg	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Xrd Peak Two Theta	(003)	14.03deg	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Xrd D Spacing	interlayer spacing	6angstrom	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Xrd D Spacing	interlayer spacing	6.3angstrom	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Substrate Thickness	flake thickness	1.57nm	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Substrate Thickness	flake thickness	9.7nm	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Raman Peak	mode	146cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	mode	206cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	mode	276cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	mode	323cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	mode	401cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	mode	158cm⁻¹	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Raman Peak	mode	260cm⁻¹	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Raman Peak	mode	315cm⁻¹	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Raman Peak	E2g	380cm⁻¹	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Peak	E2g	380cm⁻¹	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Raman Intensity Ratio	I(T)/I₀	decreases significantly above 80°C	MoS₂	As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substr	—
Raman Intensity Ratio	I(T)/I₀	decreases only above 300°C	MoS₂	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Atomic Ratio	Cu atomic ratio	0.08	Cu	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Transport Behavior	electrical behavior	insulating hopping transport	MoS₂ Cu	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—
Temperature Coefficient Of Resistance	TCR	-4 ~ -2%·K⁻¹	MoS₂ Cu	Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercala	—

Cu Intercalation-stabilized 1T’ MoS₂ with Electrical Insulating Behavior

Cu Intercalation-stabilized 1T’ MoS₂ with Electrical Insulating Behavior

Cu Intercalation-stabilized 1T’ MoS₂ with Electrical Insulating Behavior

Cu Intercalation-stabilized 1T’ MoS₂ with Electrical Insulating Behavior

Cu Intercalation-stabilized 1T’ MoS₂ with Electrical Insulating Behavior

Cu Intercalation-stabilized 1T’ MoS₂ with Electrical Insulating Behavior

Cu Intercalation-stabilized 1T’ MoS₂ with Electrical Insulating Behavior

Cu Intercalation-stabilized 1T’ MoS₂ with Electrical Insulating Behavior

Samples

As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substrate.

Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercalation of as-grown 1T’ MoS2.

Materials

Growth

Processing

Characterization

Properties

Why these are connected

Samples

As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substrate.

Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercalation of as-grown 1T’ MoS2.

Materials

Growth

Processing

Characterization

Properties

Why these are connected

Samples

As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substrate.

Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercalation of as-grown 1T’ MoS2.

Materials

Growth

Processing

Characterization

Properties

Why these are connected

Samples

As-grown 1T’ MoS₂ belts grown by LP-CVD on c-sapphire substrate.

Cu-intercalated 1T’ MoS₂ produced by wet-chemistry intercalation of as-grown 1T’ MoS2.

Materials

Growth

Processing

Characterization

Properties

Why these are connected