Research paper
Experimental GrowthExperimental CharacterizationTailoring Amorphous Boron Nitride for High-Performance 2D Electronics
Cindy Y. Chen, Zheng Sun, Riccardo Torsi, Ke Wang et al.
2025
Copyright © 2026 Matter42. All rights reserved.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations11 properties3 figures
2 preparations2 characterizations1 property4 figures
2 preparations1 characterization3 figures
2 characterizations2 figures
2 preparations3 characterizations9 properties3 figures
6 preparations1 characterization3 properties
1 preparation1 characterization
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | E2g | 1369cm⁻¹ | — | |||
| Thickness | film thickness | 9.7nm | — | |||
| Thickness | Au cap thickness | 30nm | — | — | ||
| Growth Rate | GPC | 0.34angstrom/cycle | — | |||
| Composition Fraction | oxygen incorporation | 2.1% | — | |||
| Composition Fraction | oxygen incorporation | 11.4% | — | |||
| Thickness | MoS₂ layer thickness | 0.7nm | — | |||
| Thickness | aBN layer thickness | 2.5nm | — | |||
| Raman Peak | E2g | 386.5cm⁻¹ | — | |||
| Raman Peak | A1g | 404.5cm⁻¹ | — | |||
| PL Peak | exciton peak | 681.0nm | — | |||
| PL Peak | exciton peak | 1.82eV | — | |||
| PL Peak | exciton peak | 1.86eV | — | |||
| Dielectric Strength | dielectric strength | 8.2MV/cm | — | |||
| Composition Fraction | N-H in N 1s | low concentration | — | |||
| Thickness | aBN gate dielectric thickness | 3.6nm | — | |||
| Thickness | HfO₂ gate dielectric thickness | 5.5nm | — | |||
| Thickness | Cr/Au local bottom gate thickness | 2/13nm | — | |||
| Xps Binding Energy Shift | Mo 3d5/2 | -0.34eV | — | |||
| Xps Binding Energy Shift | S 2p3/2 | -0.43eV | — | |||
| Xps Binding Energy | B 1s | 190.5eV | — | |||
| Xps Binding Energy | B 1s | 192.4eV | — | |||
| Xps Binding Energy | N 1s | 398.2eV | — | — | ||
| Xps Binding Energy | N 1s | 400.2eV | — | — | ||
| Xps Atomic Fraction | — | 2.1% | — | |||
| Xps Atomic Fraction | — | 11.4% | — |
Related documents with shared materials, methods, properties, or citations.
Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications
Quasi 1D MoS2 Nanoribbons with Enhanced Edge Nonlinear Response and Photoresponsivity
Properties and device performance of BN thin films grown on GaN by pulsed laser deposition
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Mo Atom Rearrangement Drives Layer-Dependent Reactivity in Two-Dimensional MoS2
Fe-assisted epitaxial growth of 4-inch single-crystal transition-metal dichalcogenides on c-plane sapphire without miscut angle
Unidirectional domain growth of hexagonal boron nitride thin films
Near-Infrared plasmon induced hot electron extraction evidence in an indium tin oxide nanoparticle / monolayer molybdenum disulphide heterostructure
Non-linear optics at twist interfaces in h-BN/SiC heterostructures
Decoupling the Roles of Defects/Impurities and Wrinkles in Thermal Conductivity of Wafer-scale hBN Films
Room temperature coherent control of protected qubit in hexagonal boron nitride
Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations11 properties3 figures
2 preparations2 characterizations1 property4 figures
2 preparations1 characterization3 figures
2 characterizations2 figures
2 preparations3 characterizations9 properties3 figures
6 preparations1 characterization3 properties
1 preparation1 characterization
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | E2g | 1369cm⁻¹ | — | |||
| Thickness | film thickness | 9.7nm | — | |||
| Thickness | Au cap thickness | 30nm | — | — | ||
| Growth Rate | GPC | 0.34angstrom/cycle | — | |||
| Composition Fraction | oxygen incorporation | 2.1% | — | |||
| Composition Fraction | oxygen incorporation | 11.4% | — | |||
| Thickness | MoS₂ layer thickness | 0.7nm | — | |||
| Thickness | aBN layer thickness | 2.5nm | — | |||
| Raman Peak | E2g | 386.5cm⁻¹ | — | |||
| Raman Peak | A1g | 404.5cm⁻¹ | — | |||
| PL Peak | exciton peak | 681.0nm | — | |||
| PL Peak | exciton peak | 1.82eV | — | |||
| PL Peak | exciton peak | 1.86eV | — | |||
| Dielectric Strength | dielectric strength | 8.2MV/cm | — | |||
| Composition Fraction | N-H in N 1s | low concentration | — | |||
| Thickness | aBN gate dielectric thickness | 3.6nm | — | |||
| Thickness | HfO₂ gate dielectric thickness | 5.5nm | — | |||
| Thickness | Cr/Au local bottom gate thickness | 2/13nm | — | |||
| Xps Binding Energy Shift | Mo 3d5/2 | -0.34eV | — | |||
| Xps Binding Energy Shift | S 2p3/2 | -0.43eV | — | |||
| Xps Binding Energy | B 1s | 190.5eV | — | |||
| Xps Binding Energy | B 1s | 192.4eV | — | |||
| Xps Binding Energy | N 1s | 398.2eV | — | — | ||
| Xps Binding Energy | N 1s | 400.2eV | — | — | ||
| Xps Atomic Fraction | — | 2.1% | — | |||
| Xps Atomic Fraction | — | 11.4% | — |
Related documents with shared materials, methods, properties, or citations.
Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications
Quasi 1D MoS2 Nanoribbons with Enhanced Edge Nonlinear Response and Photoresponsivity
Properties and device performance of BN thin films grown on GaN by pulsed laser deposition
Sliding ferroelectric memories and synapses
Mo Atom Rearrangement Drives Layer-Dependent Reactivity in Two-Dimensional MoS2
Fe-assisted epitaxial growth of 4-inch single-crystal transition-metal dichalcogenides on c-plane sapphire without miscut angle
Unidirectional domain growth of hexagonal boron nitride thin films
Near-Infrared plasmon induced hot electron extraction evidence in an indium tin oxide nanoparticle / monolayer molybdenum disulphide heterostructure
Non-linear optics at twist interfaces in h-BN/SiC heterostructures
Decoupling the Roles of Defects/Impurities and Wrinkles in Thermal Conductivity of Wafer-scale hBN Films
Room temperature coherent control of protected qubit in hexagonal boron nitride
Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations11 properties3 figures
2 preparations2 characterizations1 property4 figures
2 preparations1 characterization3 figures
2 characterizations2 figures
2 preparations3 characterizations9 properties3 figures
6 preparations1 characterization3 properties
1 preparation1 characterization
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | E2g | 1369cm⁻¹ | — | |||
| Thickness | film thickness | 9.7nm | — | |||
| Thickness | Au cap thickness | 30nm | — | — | ||
| Growth Rate | GPC | 0.34angstrom/cycle | — | |||
| Composition Fraction | oxygen incorporation | 2.1% | — | |||
| Composition Fraction | oxygen incorporation | 11.4% | — | |||
| Thickness | MoS₂ layer thickness | 0.7nm | — | |||
| Thickness | aBN layer thickness | 2.5nm | — | |||
| Raman Peak | E2g | 386.5cm⁻¹ | — | |||
| Raman Peak | A1g | 404.5cm⁻¹ | — | |||
| PL Peak | exciton peak | 681.0nm | — | |||
| PL Peak | exciton peak | 1.82eV | — | |||
| PL Peak | exciton peak | 1.86eV | — | |||
| Dielectric Strength | dielectric strength | 8.2MV/cm | — | |||
| Composition Fraction | N-H in N 1s | low concentration | — | |||
| Thickness | aBN gate dielectric thickness | 3.6nm | — | |||
| Thickness | HfO₂ gate dielectric thickness | 5.5nm | — | |||
| Thickness | Cr/Au local bottom gate thickness | 2/13nm | — | |||
| Xps Binding Energy Shift | Mo 3d5/2 | -0.34eV | — | |||
| Xps Binding Energy Shift | S 2p3/2 | -0.43eV | — | |||
| Xps Binding Energy | B 1s | 190.5eV | — | |||
| Xps Binding Energy | B 1s | 192.4eV | — | |||
| Xps Binding Energy | N 1s | 398.2eV | — | — | ||
| Xps Binding Energy | N 1s | 400.2eV | — | — | ||
| Xps Atomic Fraction | — | 2.1% | — | |||
| Xps Atomic Fraction | — | 11.4% | — |
Related documents with shared materials, methods, properties, or citations.
Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications
Quasi 1D MoS2 Nanoribbons with Enhanced Edge Nonlinear Response and Photoresponsivity
Properties and device performance of BN thin films grown on GaN by pulsed laser deposition
Sliding ferroelectric memories and synapses
Mo Atom Rearrangement Drives Layer-Dependent Reactivity in Two-Dimensional MoS2
Fe-assisted epitaxial growth of 4-inch single-crystal transition-metal dichalcogenides on c-plane sapphire without miscut angle
Unidirectional domain growth of hexagonal boron nitride thin films
Near-Infrared plasmon induced hot electron extraction evidence in an indium tin oxide nanoparticle / monolayer molybdenum disulphide heterostructure
Non-linear optics at twist interfaces in h-BN/SiC heterostructures
Decoupling the Roles of Defects/Impurities and Wrinkles in Thermal Conductivity of Wafer-scale hBN Films
Room temperature coherent control of protected qubit in hexagonal boron nitride
Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations11 properties3 figures
2 preparations2 characterizations1 property4 figures
2 preparations1 characterization3 figures
2 characterizations2 figures
2 preparations3 characterizations9 properties3 figures
6 preparations1 characterization3 properties
1 preparation1 characterization
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | E2g | 1369cm⁻¹ | — | |||
| Thickness | film thickness | 9.7nm | — | |||
| Thickness | Au cap thickness | 30nm | — | — | ||
| Growth Rate | GPC | 0.34angstrom/cycle | — | |||
| Composition Fraction | oxygen incorporation | 2.1% | — | |||
| Composition Fraction | oxygen incorporation | 11.4% | — | |||
| Thickness | MoS₂ layer thickness | 0.7nm | — | |||
| Thickness | aBN layer thickness | 2.5nm | — | |||
| Raman Peak | E2g | 386.5cm⁻¹ | — | |||
| Raman Peak | A1g | 404.5cm⁻¹ | — | |||
| PL Peak | exciton peak | 681.0nm | — | |||
| PL Peak | exciton peak | 1.82eV | — | |||
| PL Peak | exciton peak | 1.86eV | — | |||
| Dielectric Strength | dielectric strength | 8.2MV/cm | — | |||
| Composition Fraction | N-H in N 1s | low concentration | — | |||
| Thickness | aBN gate dielectric thickness | 3.6nm | — | |||
| Thickness | HfO₂ gate dielectric thickness | 5.5nm | — | |||
| Thickness | Cr/Au local bottom gate thickness | 2/13nm | — | |||
| Xps Binding Energy Shift | Mo 3d5/2 | -0.34eV | — | |||
| Xps Binding Energy Shift | S 2p3/2 | -0.43eV | — | |||
| Xps Binding Energy | B 1s | 190.5eV | — | |||
| Xps Binding Energy | B 1s | 192.4eV | — | |||
| Xps Binding Energy | N 1s | 398.2eV | — | — | ||
| Xps Binding Energy | N 1s | 400.2eV | — | — | ||
| Xps Atomic Fraction | — | 2.1% | — | |||
| Xps Atomic Fraction | — | 11.4% | — |
Related documents with shared materials, methods, properties, or citations.
Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications
Quasi 1D MoS2 Nanoribbons with Enhanced Edge Nonlinear Response and Photoresponsivity
Properties and device performance of BN thin films grown on GaN by pulsed laser deposition
Sliding ferroelectric memories and synapses
Mo Atom Rearrangement Drives Layer-Dependent Reactivity in Two-Dimensional MoS2
Fe-assisted epitaxial growth of 4-inch single-crystal transition-metal dichalcogenides on c-plane sapphire without miscut angle
Unidirectional domain growth of hexagonal boron nitride thin films
Near-Infrared plasmon induced hot electron extraction evidence in an indium tin oxide nanoparticle / monolayer molybdenum disulphide heterostructure
Non-linear optics at twist interfaces in h-BN/SiC heterostructures
Decoupling the Roles of Defects/Impurities and Wrinkles in Thermal Conductivity of Wafer-scale hBN Films
Room temperature coherent control of protected qubit in hexagonal boron nitride
Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2