Research paper
Experimental GrowthExperimental CharacterizationComputational DFTEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations6 characterizations5 properties7 figures
2 preparations6 characterizations6 properties7 figures
1 characterization4 properties1 figure
1 characterization2 properties1 figure
1 characterization2 properties1 figure
1 characterization2 properties1 figure
1 characterization1 property1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | Mo₅N₆ | 211cm⁻¹ | — | |||
| Raman Peak | Mo₅N₆ | 204cm⁻¹ | — | |||
| Raman Intensity Ratio | A1g intensity reduction | 25.2% | — | |||
| Raman Intensity Ratio | A1g intensity reduction | 21% | — | |||
| Raman Intensity Ratio | A1g intensity reduction | 18.3% | — | |||
| Raman Intensity Ratio | A1g intensity reduction | 10.9% | — | |||
| Thickness | flake thickness | 26.7nm | — | |||
| Thickness | flake thickness | 6.3nm | — | |||
| Thickness | flake thickness | 3.3nm | — | |||
| Binding Energy | NH₃ physisorption on pristine MoS₂ | 20–36meV | — | |||
| Binding Energy | NH₃ physisorption on VMoS₃ | 0.13eV | — | |||
| Binding Energy | NH₃ binding on VS | -1.4eV | — | |||
| Binding Energy | NH₃ binding on VMoS3,H | -1.13eV | — | |||
| Binding Energy | NH₃ binding on VS₃ | -0.90 to -1.08eV | — | |||
| Defect Formation Energy | VS | 2.6eV | — | |||
| Defect Formation Energy | VS₃ | 8.08eV | — | |||
| Defect Formation Energy | VMoS₃ | 9.6eV | — | |||
| Defect Formation Energy | VMoS3,H | 11.43eV | — | |||
| Lattice Constant | a | 3.181689angstrom | — | |||
| Lattice Constant | c | 14.838772angstrom | — |
Related documents with shared materials, methods, properties, or citations.
Sliding ferroelectric memories and synapses
Machine Learning Assisted Reconstruction of Local Electronic Structure of Non-Uniformly Strained MoS2
Identification and Structural Characterization of Twisted Atomically Thin Bilayer Materials by Deep Learning
Defects, band bending and ionization rings in MoS2
Surface-exciton enhanced SHG response in few-layer 2H-TMDC
Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics
Strain-Induced Decoupling Drives Gold-Assisted Exfoliation of Large-Area Monolayer 2D Crystals
Quasi 1D MoS2 Nanoribbons with Enhanced Edge Nonlinear Response and Photoresponsivity
Broadband miniaturized spectrometers with a van der Waals tunnel diode
Janus-induced atomic reconstruction amplifies twist-angle modulation of interlayer thermal transport in moiré bilayers
A comparative nanotribological investigation on amorphous and polycrystalline forms of MoS2
Interfacial stress transfer in monolayer and few-layer MoS2 nanosheets in model nanocomposites
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations6 characterizations5 properties7 figures
2 preparations6 characterizations6 properties7 figures
1 characterization4 properties1 figure
1 characterization2 properties1 figure
1 characterization2 properties1 figure
1 characterization2 properties1 figure
1 characterization1 property1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | Mo₅N₆ | 211cm⁻¹ | — | |||
| Raman Peak | Mo₅N₆ | 204cm⁻¹ | — | |||
| Raman Intensity Ratio | A1g intensity reduction | 25.2% | — | |||
| Raman Intensity Ratio | A1g intensity reduction | 21% | — | |||
| Raman Intensity Ratio | A1g intensity reduction | 18.3% | — | |||
| Raman Intensity Ratio | A1g intensity reduction | 10.9% | — | |||
| Thickness | flake thickness | 26.7nm | — | |||
| Thickness | flake thickness | 6.3nm | — | |||
| Thickness | flake thickness | 3.3nm | — | |||
| Binding Energy | NH₃ physisorption on pristine MoS₂ | 20–36meV | — | |||
| Binding Energy | NH₃ physisorption on VMoS₃ | 0.13eV | — | |||
| Binding Energy | NH₃ binding on VS | -1.4eV | — | |||
| Binding Energy | NH₃ binding on VMoS3,H | -1.13eV | — | |||
| Binding Energy | NH₃ binding on VS₃ | -0.90 to -1.08eV | — | |||
| Defect Formation Energy | VS | 2.6eV | — | |||
| Defect Formation Energy | VS₃ | 8.08eV | — | |||
| Defect Formation Energy | VMoS₃ | 9.6eV | — | |||
| Defect Formation Energy | VMoS3,H | 11.43eV | — | |||
| Lattice Constant | a | 3.181689angstrom | — | |||
| Lattice Constant | c | 14.838772angstrom | — |
Related documents with shared materials, methods, properties, or citations.
Sliding ferroelectric memories and synapses
Machine Learning Assisted Reconstruction of Local Electronic Structure of Non-Uniformly Strained MoS2
Identification and Structural Characterization of Twisted Atomically Thin Bilayer Materials by Deep Learning
Defects, band bending and ionization rings in MoS2
Surface-exciton enhanced SHG response in few-layer 2H-TMDC
Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics
Strain-Induced Decoupling Drives Gold-Assisted Exfoliation of Large-Area Monolayer 2D Crystals
Quasi 1D MoS2 Nanoribbons with Enhanced Edge Nonlinear Response and Photoresponsivity
Broadband miniaturized spectrometers with a van der Waals tunnel diode
Janus-induced atomic reconstruction amplifies twist-angle modulation of interlayer thermal transport in moiré bilayers
A comparative nanotribological investigation on amorphous and polycrystalline forms of MoS2
Interfacial stress transfer in monolayer and few-layer MoS2 nanosheets in model nanocomposites
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations6 characterizations5 properties7 figures
2 preparations6 characterizations6 properties7 figures
1 characterization4 properties1 figure
1 characterization2 properties1 figure
1 characterization2 properties1 figure
1 characterization2 properties1 figure
1 characterization1 property1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | Mo₅N₆ | 211cm⁻¹ | — | |||
| Raman Peak | Mo₅N₆ | 204cm⁻¹ | — | |||
| Raman Intensity Ratio | A1g intensity reduction | 25.2% | — | |||
| Raman Intensity Ratio | A1g intensity reduction | 21% | — | |||
| Raman Intensity Ratio | A1g intensity reduction | 18.3% | — | |||
| Raman Intensity Ratio | A1g intensity reduction | 10.9% | — | |||
| Thickness | flake thickness | 26.7nm | — | |||
| Thickness | flake thickness | 6.3nm | — | |||
| Thickness | flake thickness | 3.3nm | — | |||
| Binding Energy | NH₃ physisorption on pristine MoS₂ | 20–36meV | — | |||
| Binding Energy | NH₃ physisorption on VMoS₃ | 0.13eV | — | |||
| Binding Energy | NH₃ binding on VS | -1.4eV | — | |||
| Binding Energy | NH₃ binding on VMoS3,H | -1.13eV | — | |||
| Binding Energy | NH₃ binding on VS₃ | -0.90 to -1.08eV | — | |||
| Defect Formation Energy | VS | 2.6eV | — | |||
| Defect Formation Energy | VS₃ | 8.08eV | — | |||
| Defect Formation Energy | VMoS₃ | 9.6eV | — | |||
| Defect Formation Energy | VMoS3,H | 11.43eV | — | |||
| Lattice Constant | a | 3.181689angstrom | — | |||
| Lattice Constant | c | 14.838772angstrom | — |
Related documents with shared materials, methods, properties, or citations.
Sliding ferroelectric memories and synapses
Machine Learning Assisted Reconstruction of Local Electronic Structure of Non-Uniformly Strained MoS2
Identification and Structural Characterization of Twisted Atomically Thin Bilayer Materials by Deep Learning
Defects, band bending and ionization rings in MoS2
Surface-exciton enhanced SHG response in few-layer 2H-TMDC
Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics
Strain-Induced Decoupling Drives Gold-Assisted Exfoliation of Large-Area Monolayer 2D Crystals
Quasi 1D MoS2 Nanoribbons with Enhanced Edge Nonlinear Response and Photoresponsivity
Broadband miniaturized spectrometers with a van der Waals tunnel diode
Janus-induced atomic reconstruction amplifies twist-angle modulation of interlayer thermal transport in moiré bilayers
A comparative nanotribological investigation on amorphous and polycrystalline forms of MoS2
Interfacial stress transfer in monolayer and few-layer MoS2 nanosheets in model nanocomposites
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations6 characterizations5 properties7 figures
2 preparations6 characterizations6 properties7 figures
1 characterization4 properties1 figure
1 characterization2 properties1 figure
1 characterization2 properties1 figure
1 characterization2 properties1 figure
1 characterization1 property1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | Mo₅N₆ | 211cm⁻¹ | — | |||
| Raman Peak | Mo₅N₆ | 204cm⁻¹ | — | |||
| Raman Intensity Ratio | A1g intensity reduction | 25.2% | — | |||
| Raman Intensity Ratio | A1g intensity reduction | 21% | — | |||
| Raman Intensity Ratio | A1g intensity reduction | 18.3% | — | |||
| Raman Intensity Ratio | A1g intensity reduction | 10.9% | — | |||
| Thickness | flake thickness | 26.7nm | — | |||
| Thickness | flake thickness | 6.3nm | — | |||
| Thickness | flake thickness | 3.3nm | — | |||
| Binding Energy | NH₃ physisorption on pristine MoS₂ | 20–36meV | — | |||
| Binding Energy | NH₃ physisorption on VMoS₃ | 0.13eV | — | |||
| Binding Energy | NH₃ binding on VS | -1.4eV | — | |||
| Binding Energy | NH₃ binding on VMoS3,H | -1.13eV | — | |||
| Binding Energy | NH₃ binding on VS₃ | -0.90 to -1.08eV | — | |||
| Defect Formation Energy | VS | 2.6eV | — | |||
| Defect Formation Energy | VS₃ | 8.08eV | — | |||
| Defect Formation Energy | VMoS₃ | 9.6eV | — | |||
| Defect Formation Energy | VMoS3,H | 11.43eV | — | |||
| Lattice Constant | a | 3.181689angstrom | — | |||
| Lattice Constant | c | 14.838772angstrom | — |
Related documents with shared materials, methods, properties, or citations.
Sliding ferroelectric memories and synapses
Machine Learning Assisted Reconstruction of Local Electronic Structure of Non-Uniformly Strained MoS2
Identification and Structural Characterization of Twisted Atomically Thin Bilayer Materials by Deep Learning
Defects, band bending and ionization rings in MoS2
Surface-exciton enhanced SHG response in few-layer 2H-TMDC
Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics
Strain-Induced Decoupling Drives Gold-Assisted Exfoliation of Large-Area Monolayer 2D Crystals
Quasi 1D MoS2 Nanoribbons with Enhanced Edge Nonlinear Response and Photoresponsivity
Broadband miniaturized spectrometers with a van der Waals tunnel diode
Janus-induced atomic reconstruction amplifies twist-angle modulation of interlayer thermal transport in moiré bilayers
A comparative nanotribological investigation on amorphous and polycrystalline forms of MoS2
Interfacial stress transfer in monolayer and few-layer MoS2 nanosheets in model nanocomposites