Probing the Relationship between Defects and Enhanced Mobility in MoS2 Monolayers Grown by Mo Foil

Sudipta Majumder; Vaibhav Walve; Rahul Chand; Gokul M.A.; Sooyeon Hwang; G. V. Pavan Kumar; Aparna Deshpande; Atikur Rahman

doi:10.48550/arxiv.2405.17373

Paper details

Research paper

Experimental GrowthExperimental Characterization

Probing the Relationship between Defects and Enhanced Mobility in MoS₂ Monolayers Grown by Mo Foil

Sudipta Majumder, Vaibhav Walve, Rahul Chand, Gokul M.A. et al.

2024

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown by APCVD from oxidized Mo foil.

2 preparations1 characterization5 properties1 figure

ExperimentalMoS₂Studied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

Oxygen-plasma-oxidized Mo foil used as the precursor source and characterized by XPS before growth.

1 preparation1 characterization5 properties1 figure

ExperimentalMoPrecursor

Materials

MoS₂

Studied Material

Also known as

monolayer MoS₂ML-MoS₂

studied material

Molybdenum foil

Precursor

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Probing the Relationship between Defects and Enhanced Mobility in MoS2 Monolayers Grown by Mo Foil | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Xps Core Level Binding Energy	Mo 3d3/2	235.7eV	Mo	Oxygen-plasma-oxidized Mo foil used as the precursor source	—
Xps Core Level Binding Energy	Mo 3d5/2	232.6eV	Mo	Oxygen-plasma-oxidized Mo foil used as the precursor source	—
Xps Core Level Binding Energy	Mo 3d3/2	232.9eV	MoS₂	As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown b	—
Xps Core Level Binding Energy	Mo 3d5/2	229.7eV	MoS₂	As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown b	—
Xps Core Level Binding Energy	S 2s	226.9eV	MoS₂	As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown b	—
Xps Binding Energy	Mo 3d3/2	235.7eV	Mo	Oxygen-plasma-oxidized Mo foil used as the precursor source	—
Xps Binding Energy	Mo 3d5/2	232.6eV	Mo	Oxygen-plasma-oxidized Mo foil used as the precursor source	—
Xps Binding Energy	Mo 3d5/2	228eV	Mo	Oxygen-plasma-oxidized Mo foil used as the precursor source	—
Xps Binding Energy	Mo 3d3/2	232.9eV	MoS₂	As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown b	—
Xps Binding Energy	Mo 3d5/2	229.7eV	MoS₂	As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown b	—
Xps Binding Energy	S 2s	226.9eV	S	—	—

Properties

Type	Label	Value	Material	Sample	Source
Xps Core Level Binding Energy	Mo 3d3/2	235.7eV	Mo	Oxygen-plasma-oxidized Mo foil used as the precursor source	—
Xps Core Level Binding Energy	Mo 3d5/2	232.6eV	Mo	Oxygen-plasma-oxidized Mo foil used as the precursor source	—
Xps Core Level Binding Energy	Mo 3d3/2	232.9eV	MoS₂	As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown b	—
Xps Core Level Binding Energy	Mo 3d5/2	229.7eV	MoS₂	As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown b	—
Xps Core Level Binding Energy	S 2s	226.9eV	MoS₂	As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown b	—
Xps Binding Energy	Mo 3d3/2	235.7eV	Mo	Oxygen-plasma-oxidized Mo foil used as the precursor source	—
Xps Binding Energy	Mo 3d5/2	232.6eV	Mo	Oxygen-plasma-oxidized Mo foil used as the precursor source	—
Xps Binding Energy	Mo 3d5/2	228eV	Mo	Oxygen-plasma-oxidized Mo foil used as the precursor source	—
Xps Binding Energy	Mo 3d3/2	232.9eV	MoS₂	As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown b	—
Xps Binding Energy	Mo 3d5/2	229.7eV	MoS₂	As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown b	—
Xps Binding Energy	S 2s	226.9eV	S	—	—

Properties

Type	Label	Value	Material	Sample	Source
Xps Core Level Binding Energy	Mo 3d3/2	235.7eV	Mo	Oxygen-plasma-oxidized Mo foil used as the precursor source	—
Xps Core Level Binding Energy	Mo 3d5/2	232.6eV	Mo	Oxygen-plasma-oxidized Mo foil used as the precursor source	—
Xps Core Level Binding Energy	Mo 3d3/2	232.9eV	MoS₂	As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown b	—
Xps Core Level Binding Energy	Mo 3d5/2	229.7eV	MoS₂	As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown b	—
Xps Core Level Binding Energy	S 2s	226.9eV	MoS₂	As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown b	—
Xps Binding Energy	Mo 3d3/2	235.7eV	Mo	Oxygen-plasma-oxidized Mo foil used as the precursor source	—
Xps Binding Energy	Mo 3d5/2	232.6eV	Mo	Oxygen-plasma-oxidized Mo foil used as the precursor source	—
Xps Binding Energy	Mo 3d5/2	228eV	Mo	Oxygen-plasma-oxidized Mo foil used as the precursor source	—
Xps Binding Energy	Mo 3d3/2	232.9eV	MoS₂	As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown b	—
Xps Binding Energy	Mo 3d5/2	229.7eV	MoS₂	As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown b	—
Xps Binding Energy	S 2s	226.9eV	S	—	—

Properties

Type	Label	Value	Material	Sample	Source
Xps Core Level Binding Energy	Mo 3d3/2	235.7eV	Mo	Oxygen-plasma-oxidized Mo foil used as the precursor source	—
Xps Core Level Binding Energy	Mo 3d5/2	232.6eV	Mo	Oxygen-plasma-oxidized Mo foil used as the precursor source	—
Xps Core Level Binding Energy	Mo 3d3/2	232.9eV	MoS₂	As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown b	—
Xps Core Level Binding Energy	Mo 3d5/2	229.7eV	MoS₂	As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown b	—
Xps Core Level Binding Energy	S 2s	226.9eV	MoS₂	As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown b	—
Xps Binding Energy	Mo 3d3/2	235.7eV	Mo	Oxygen-plasma-oxidized Mo foil used as the precursor source	—
Xps Binding Energy	Mo 3d5/2	232.6eV	Mo	Oxygen-plasma-oxidized Mo foil used as the precursor source	—
Xps Binding Energy	Mo 3d5/2	228eV	Mo	Oxygen-plasma-oxidized Mo foil used as the precursor source	—
Xps Binding Energy	Mo 3d3/2	232.9eV	MoS₂	As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown b	—
Xps Binding Energy	Mo 3d5/2	229.7eV	MoS₂	As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown b	—
Xps Binding Energy	S 2s	226.9eV	S	—	—

Probing the Relationship between Defects and Enhanced Mobility in MoS₂ Monolayers Grown by Mo Foil

Samples

As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown by APCVD from oxidized Mo foil.

Oxygen-plasma-oxidized Mo foil used as the precursor source and characterized by XPS before growth.

Materials

Why these are connected

Probing the Relationship between Defects and Enhanced Mobility in MoS₂ Monolayers Grown by Mo Foil

Samples

As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown by APCVD from oxidized Mo foil.

Oxygen-plasma-oxidized Mo foil used as the precursor source and characterized by XPS before growth.

Materials

Why these are connected

Probing the Relationship between Defects and Enhanced Mobility in MoS₂ Monolayers Grown by Mo Foil

Samples

As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown by APCVD from oxidized Mo foil.

Oxygen-plasma-oxidized Mo foil used as the precursor source and characterized by XPS before growth.

Materials

Why these are connected

Probing the Relationship between Defects and Enhanced Mobility in MoS₂ Monolayers Grown by Mo Foil

Samples

As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown by APCVD from oxidized Mo foil.

Oxygen-plasma-oxidized Mo foil used as the precursor source and characterized by XPS before growth.

Materials

Why these are connected

Probing the Relationship between Defects and Enhanced Mobility in MoS₂ Monolayers Grown by Mo Foil

Samples

As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown by APCVD from oxidized Mo foil.

Oxygen-plasma-oxidized Mo foil used as the precursor source and characterized by XPS before growth.

Materials

Why these are connected

Probing the Relationship between Defects and Enhanced Mobility in MoS₂ Monolayers Grown by Mo Foil

Samples

As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown by APCVD from oxidized Mo foil.

Oxygen-plasma-oxidized Mo foil used as the precursor source and characterized by XPS before growth.

Materials

Why these are connected

Probing the Relationship between Defects and Enhanced Mobility in MoS₂ Monolayers Grown by Mo Foil

Samples

As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown by APCVD from oxidized Mo foil.

Oxygen-plasma-oxidized Mo foil used as the precursor source and characterized by XPS before growth.

Materials

Why these are connected

Probing the Relationship between Defects and Enhanced Mobility in MoS₂ Monolayers Grown by Mo Foil

Samples

As-grown monolayer MoS₂ flakes on SiO₂/Si substrates grown by APCVD from oxidized Mo foil.

Oxygen-plasma-oxidized Mo foil used as the precursor source and characterized by XPS before growth.

Materials

Why these are connected

Growth

Processing

Characterization

Properties

Growth

Processing

Characterization

Properties

Growth

Processing

Characterization

Properties

Growth

Processing

Characterization

Properties