Abstract

In recent years, monolayer Molybdenum Disulfide (MoS₂) has emerged as a pivotal material in advancing next-generation optoelectronic technologies. Consequently, a pressing demand exists for the large-scale production of MoS₂ monolayers for fundamental research and commercial applications. Atomic vacancies, such as chalcogen vacancies, hold significant importance in changing the host material's electronic structure and transport properties. We present a straightforward one-step method for growing monolayer MoS₂ utilizing oxidized Molybdenum (Mo) foil using chemical vapour deposition and delve into the transport properties of as-grown samples. The controlled release of precursors from the Mo foil facilitates the growth of monolayer MoS₂ under a wide range of temperatures and growth time. Devices fabricated from these MoS₂ sheets exhibit excellent electrical responses, with the standout device achieving mobility exceeding 100 cm2V-1s-1. Structural analysis and optical signatures unveiled the presence of chalcogen defects within these samples. To decipher the influence of inherent defects on the electronic transport properties, we measured low-temperature transport on two distinct sets of devices exhibiting relatively high or low mobilities. Combining the thermally activated transport model with quantum capacitance calculations, we have shown the existence of shallow states near the conduction band, likely attributed to sulfur vacancies within MoS2. These vacancies are responsible for the hopping conduction of electrons in the device channel. Furthermore, our claims were substantiated through low-temperature scanning tunnelling microscopy measurements, which revealed an abundance of isolated and lateral double sulfur vacancies in Mo foil-grown samples. We found that these vacancies increase the density of states near the conduction band, inducing intrinsic n-type doping in the MoS₂ channel. Consequently, this elevated conductivity enhances the field-effect mobility of MoS₂ transistors. Our study offers insights into chalcogen vacancies in CVD-grown monolayer MoS₂ and highlights their beneficial impact on electronic transport properties.

Abstract

In recent years, monolayer Molybdenum Disulfide (MoS₂) has emerged as a pivotal material in advancing next-generation optoelectronic technologies. Consequently, a pressing demand exists for the large-scale production of MoS₂ monolayers for fundamental research and commercial applications. Atomic vacancies, such as chalcogen vacancies, hold significant importance in changing the host material's electronic structure and transport properties. We present a straightforward one-step method for growing monolayer MoS₂ utilizing oxidized Molybdenum (Mo) foil using chemical vapour deposition and delve into the transport properties of as-grown samples. The controlled release of precursors from the Mo foil facilitates the growth of monolayer MoS₂ under a wide range of temperatures and growth time. Devices fabricated from these MoS₂ sheets exhibit excellent electrical responses, with the standout device achieving mobility exceeding 100 cm2V-1s-1. Structural analysis and optical signatures unveiled the presence of chalcogen defects within these samples. To decipher the influence of inherent defects on the electronic transport properties, we measured low-temperature transport on two distinct sets of devices exhibiting relatively high or low mobilities. Combining the thermally activated transport model with quantum capacitance calculations, we have shown the existence of shallow states near the conduction band, likely attributed to sulfur vacancies within MoS2. These vacancies are responsible for the hopping conduction of electrons in the device channel. Furthermore, our claims were substantiated through low-temperature scanning tunnelling microscopy measurements, which revealed an abundance of isolated and lateral double sulfur vacancies in Mo foil-grown samples. We found that these vacancies increase the density of states near the conduction band, inducing intrinsic n-type doping in the MoS₂ channel. Consequently, this elevated conductivity enhances the field-effect mobility of MoS₂ transistors. Our study offers insights into chalcogen vacancies in CVD-grown monolayer MoS₂ and highlights their beneficial impact on electronic transport properties.

Abstract

In recent years, monolayer Molybdenum Disulfide (MoS₂) has emerged as a pivotal material in advancing next-generation optoelectronic technologies. Consequently, a pressing demand exists for the large-scale production of MoS₂ monolayers for fundamental research and commercial applications. Atomic vacancies, such as chalcogen vacancies, hold significant importance in changing the host material's electronic structure and transport properties. We present a straightforward one-step method for growing monolayer MoS₂ utilizing oxidized Molybdenum (Mo) foil using chemical vapour deposition and delve into the transport properties of as-grown samples. The controlled release of precursors from the Mo foil facilitates the growth of monolayer MoS₂ under a wide range of temperatures and growth time. Devices fabricated from these MoS₂ sheets exhibit excellent electrical responses, with the standout device achieving mobility exceeding 100 cm2V-1s-1. Structural analysis and optical signatures unveiled the presence of chalcogen defects within these samples. To decipher the influence of inherent defects on the electronic transport properties, we measured low-temperature transport on two distinct sets of devices exhibiting relatively high or low mobilities. Combining the thermally activated transport model with quantum capacitance calculations, we have shown the existence of shallow states near the conduction band, likely attributed to sulfur vacancies within MoS2. These vacancies are responsible for the hopping conduction of electrons in the device channel. Furthermore, our claims were substantiated through low-temperature scanning tunnelling microscopy measurements, which revealed an abundance of isolated and lateral double sulfur vacancies in Mo foil-grown samples. We found that these vacancies increase the density of states near the conduction band, inducing intrinsic n-type doping in the MoS₂ channel. Consequently, this elevated conductivity enhances the field-effect mobility of MoS₂ transistors. Our study offers insights into chalcogen vacancies in CVD-grown monolayer MoS₂ and highlights their beneficial impact on electronic transport properties.

Abstract

In recent years, monolayer Molybdenum Disulfide (MoS₂) has emerged as a pivotal material in advancing next-generation optoelectronic technologies. Consequently, a pressing demand exists for the large-scale production of MoS₂ monolayers for fundamental research and commercial applications. Atomic vacancies, such as chalcogen vacancies, hold significant importance in changing the host material's electronic structure and transport properties. We present a straightforward one-step method for growing monolayer MoS₂ utilizing oxidized Molybdenum (Mo) foil using chemical vapour deposition and delve into the transport properties of as-grown samples. The controlled release of precursors from the Mo foil facilitates the growth of monolayer MoS₂ under a wide range of temperatures and growth time. Devices fabricated from these MoS₂ sheets exhibit excellent electrical responses, with the standout device achieving mobility exceeding 100 cm2V-1s-1. Structural analysis and optical signatures unveiled the presence of chalcogen defects within these samples. To decipher the influence of inherent defects on the electronic transport properties, we measured low-temperature transport on two distinct sets of devices exhibiting relatively high or low mobilities. Combining the thermally activated transport model with quantum capacitance calculations, we have shown the existence of shallow states near the conduction band, likely attributed to sulfur vacancies within MoS2. These vacancies are responsible for the hopping conduction of electrons in the device channel. Furthermore, our claims were substantiated through low-temperature scanning tunnelling microscopy measurements, which revealed an abundance of isolated and lateral double sulfur vacancies in Mo foil-grown samples. We found that these vacancies increase the density of states near the conduction band, inducing intrinsic n-type doping in the MoS₂ channel. Consequently, this elevated conductivity enhances the field-effect mobility of MoS₂ transistors. Our study offers insights into chalcogen vacancies in CVD-grown monolayer MoS₂ and highlights their beneficial impact on electronic transport properties.