Sliding ferroelectric memories and synapses

Xiuzhen Li; Biao Qin; Yaxian Wang; Yue Xi; Zhiheng Huang; Mengze Zhao; Yalin Peng; Zitao Chen; Zitian Pan; Jundong Zhu; Chenyang Cui; Rong Yang; Wei Yang; Sheng Meng; Dongxia Shi; Xuedong Bai; Can Liu; Na Li; Jianshi Tang; Kaihui Liu; Luojun Du; Guangyu Zhang

doi:10.1002/adma.202303122

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputational DFT

Sliding ferroelectric memories and synapses

Xiuzhen Li, Biao Qin, Yaxian Wang, Yue Xi et al.

Nature·2025·10.1002/adma.202303122·arXiv:2401.16150

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Transferred inch-scale R-stacked bilayer MoS₂ device channel on a silicon substrate with a 20 nm Al₂O₃ dielectric layer for device fabrication.

6 characterizations4 properties7 figures

ExperimentalMoS₂Studied MaterialAl₂O₃Substrate / DielectricSiSubstrate / Dielectric

As-grown R-stacked bilayer MoS₂ sample on a metal substrate used for PFM measurement of ferroelectric switching.

2 characterizations7 properties2 figures

ExperimentalMoS₂Studied Material

Materials

MoS₂

Studied Material

Also known as

bilayer MoS₂rhombohedral-stacked bilayer MoS₂R-stacked bilayer MoS₂

Variables

stacking= 3R / rhombohedral

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Sliding ferroelectric memories and synapses | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	Al₂O₃ dielectric thickness	20nm	Al₂O₃	Transferred inch-scale R-stacked bilayer MoS₂ device channel	—
Thickness	bilayer thickness	1.27nm	MoS₂	Transferred inch-scale R-stacked bilayer MoS₂ device channel	—
Raman Mode Separation	E2g-A1g separation	23.6cm⁻¹	MoS₂	Transferred inch-scale R-stacked bilayer MoS₂ device channel	—
Property Ratio	SHG intensity relative to monolayer	4	MoS₂	Transferred inch-scale R-stacked bilayer MoS₂ device channel	—
Switching Angle	PFM phase switching	180deg	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Memory Window	memory window	>8V	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Fet On Off Ratio	conductance ratio	10000000	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Retention Time	non-volatile retention	10year	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Endurance Cycles	programming endurance	10000cycles	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Flex Bending Cycles	bending tolerance	1000cycles	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Classification Accuracy	MNIST recognition accuracy	97.81%	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	Al₂O₃ dielectric thickness	20nm	Al₂O₃	Transferred inch-scale R-stacked bilayer MoS₂ device channel	—
Thickness	bilayer thickness	1.27nm	MoS₂	Transferred inch-scale R-stacked bilayer MoS₂ device channel	—
Raman Mode Separation	E2g-A1g separation	23.6cm⁻¹	MoS₂	Transferred inch-scale R-stacked bilayer MoS₂ device channel	—
Property Ratio	SHG intensity relative to monolayer	4	MoS₂	Transferred inch-scale R-stacked bilayer MoS₂ device channel	—
Switching Angle	PFM phase switching	180deg	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Memory Window	memory window	>8V	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Fet On Off Ratio	conductance ratio	10000000	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Retention Time	non-volatile retention	10year	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Endurance Cycles	programming endurance	10000cycles	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Flex Bending Cycles	bending tolerance	1000cycles	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Classification Accuracy	MNIST recognition accuracy	97.81%	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	Al₂O₃ dielectric thickness	20nm	Al₂O₃	Transferred inch-scale R-stacked bilayer MoS₂ device channel	—
Thickness	bilayer thickness	1.27nm	MoS₂	Transferred inch-scale R-stacked bilayer MoS₂ device channel	—
Raman Mode Separation	E2g-A1g separation	23.6cm⁻¹	MoS₂	Transferred inch-scale R-stacked bilayer MoS₂ device channel	—
Property Ratio	SHG intensity relative to monolayer	4	MoS₂	Transferred inch-scale R-stacked bilayer MoS₂ device channel	—
Switching Angle	PFM phase switching	180deg	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Memory Window	memory window	>8V	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Fet On Off Ratio	conductance ratio	10000000	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Retention Time	non-volatile retention	10year	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Endurance Cycles	programming endurance	10000cycles	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Flex Bending Cycles	bending tolerance	1000cycles	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Classification Accuracy	MNIST recognition accuracy	97.81%	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	Al₂O₃ dielectric thickness	20nm	Al₂O₃	Transferred inch-scale R-stacked bilayer MoS₂ device channel	—
Thickness	bilayer thickness	1.27nm	MoS₂	Transferred inch-scale R-stacked bilayer MoS₂ device channel	—
Raman Mode Separation	E2g-A1g separation	23.6cm⁻¹	MoS₂	Transferred inch-scale R-stacked bilayer MoS₂ device channel	—
Property Ratio	SHG intensity relative to monolayer	4	MoS₂	Transferred inch-scale R-stacked bilayer MoS₂ device channel	—
Switching Angle	PFM phase switching	180deg	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Memory Window	memory window	>8V	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Fet On Off Ratio	conductance ratio	10000000	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Retention Time	non-volatile retention	10year	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Endurance Cycles	programming endurance	10000cycles	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Flex Bending Cycles	bending tolerance	1000cycles	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—
Classification Accuracy	MNIST recognition accuracy	97.81%	MoS₂	As-grown R-stacked bilayer MoS₂ sample on a metal substrate	—

Sliding ferroelectric memories and synapses

Samples

Transferred inch-scale R-stacked bilayer MoS₂ device channel on a silicon substrate with a 20 nm Al₂O₃ dielectric layer for device fabrication.

As-grown R-stacked bilayer MoS₂ sample on a metal substrate used for PFM measurement of ferroelectric switching.

Materials

Why these are connected

Sliding ferroelectric memories and synapses

Samples

Transferred inch-scale R-stacked bilayer MoS₂ device channel on a silicon substrate with a 20 nm Al₂O₃ dielectric layer for device fabrication.

As-grown R-stacked bilayer MoS₂ sample on a metal substrate used for PFM measurement of ferroelectric switching.

Materials

Why these are connected

Sliding ferroelectric memories and synapses

Samples

Transferred inch-scale R-stacked bilayer MoS₂ device channel on a silicon substrate with a 20 nm Al₂O₃ dielectric layer for device fabrication.

As-grown R-stacked bilayer MoS₂ sample on a metal substrate used for PFM measurement of ferroelectric switching.

Materials

Why these are connected

Sliding ferroelectric memories and synapses

Samples

Transferred inch-scale R-stacked bilayer MoS₂ device channel on a silicon substrate with a 20 nm Al₂O₃ dielectric layer for device fabrication.

As-grown R-stacked bilayer MoS₂ sample on a metal substrate used for PFM measurement of ferroelectric switching.

Materials

Why these are connected

Sliding ferroelectric memories and synapses

Samples

Transferred inch-scale R-stacked bilayer MoS₂ device channel on a silicon substrate with a 20 nm Al₂O₃ dielectric layer for device fabrication.

As-grown R-stacked bilayer MoS₂ sample on a metal substrate used for PFM measurement of ferroelectric switching.

Materials

Why these are connected

Sliding ferroelectric memories and synapses

Samples

Transferred inch-scale R-stacked bilayer MoS₂ device channel on a silicon substrate with a 20 nm Al₂O₃ dielectric layer for device fabrication.

As-grown R-stacked bilayer MoS₂ sample on a metal substrate used for PFM measurement of ferroelectric switching.

Materials

Why these are connected

Sliding ferroelectric memories and synapses

Samples

Transferred inch-scale R-stacked bilayer MoS₂ device channel on a silicon substrate with a 20 nm Al₂O₃ dielectric layer for device fabrication.

As-grown R-stacked bilayer MoS₂ sample on a metal substrate used for PFM measurement of ferroelectric switching.

Materials

Why these are connected

Sliding ferroelectric memories and synapses

Samples

Transferred inch-scale R-stacked bilayer MoS₂ device channel on a silicon substrate with a 20 nm Al₂O₃ dielectric layer for device fabrication.

As-grown R-stacked bilayer MoS₂ sample on a metal substrate used for PFM measurement of ferroelectric switching.

Materials

Why these are connected

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations