Research paperExperimental GrowthExperimental CharacterizationComputational DFTSliding ferroelectric memories and synapsesXiuzhen Li, Biao Qin, Yaxian Wang, Yue Xi et al.Nature·2025·10.1002/adma.202303122·arXiv:2401.16150AbstractWe demonstrate rewritable, non-volatile memory devices at room temperature using a two-dimensional sliding ferroelectric semiconductor of rhombohedral-stacked bilayer MoS₂ grown by a stacking-controlled technique. The devices show a large memory window, high conductance ratio, long retention, high endurance, flexible operation, synaptic plasticity, and image recognition with high accuracy.Read more
Transferred inch-scale R-stacked bilayer MoS₂ device channel on a silicon substrate with a 20 nm Al₂O₃ dielectric layer for device fabrication.6 characterizations4 properties7 figuresExperimentalMoS₂Studied MaterialAl₂O₃Substrate / DielectricSiSubstrate / DielectricExpand
As-grown R-stacked bilayer MoS₂ sample on a metal substrate used for PFM measurement of ferroelectric switching.2 characterizations7 properties2 figuresExperimentalMoS₂Studied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTSliding ferroelectric memories and synapsesXiuzhen Li, Biao Qin, Yaxian Wang, Yue Xi et al.Nature·2025·10.1002/adma.202303122·arXiv:2401.16150AbstractWe demonstrate rewritable, non-volatile memory devices at room temperature using a two-dimensional sliding ferroelectric semiconductor of rhombohedral-stacked bilayer MoS₂ grown by a stacking-controlled technique. The devices show a large memory window, high conductance ratio, long retention, high endurance, flexible operation, synaptic plasticity, and image recognition with high accuracy.Read more
Transferred inch-scale R-stacked bilayer MoS₂ device channel on a silicon substrate with a 20 nm Al₂O₃ dielectric layer for device fabrication.6 characterizations4 properties7 figuresExperimentalMoS₂Studied MaterialAl₂O₃Substrate / DielectricSiSubstrate / DielectricExpand
As-grown R-stacked bilayer MoS₂ sample on a metal substrate used for PFM measurement of ferroelectric switching.2 characterizations7 properties2 figuresExperimentalMoS₂Studied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTSliding ferroelectric memories and synapsesXiuzhen Li, Biao Qin, Yaxian Wang, Yue Xi et al.Nature·2025·10.1002/adma.202303122·arXiv:2401.16150AbstractWe demonstrate rewritable, non-volatile memory devices at room temperature using a two-dimensional sliding ferroelectric semiconductor of rhombohedral-stacked bilayer MoS₂ grown by a stacking-controlled technique. The devices show a large memory window, high conductance ratio, long retention, high endurance, flexible operation, synaptic plasticity, and image recognition with high accuracy.Read more
Transferred inch-scale R-stacked bilayer MoS₂ device channel on a silicon substrate with a 20 nm Al₂O₃ dielectric layer for device fabrication.6 characterizations4 properties7 figuresExperimentalMoS₂Studied MaterialAl₂O₃Substrate / DielectricSiSubstrate / DielectricExpand
As-grown R-stacked bilayer MoS₂ sample on a metal substrate used for PFM measurement of ferroelectric switching.2 characterizations7 properties2 figuresExperimentalMoS₂Studied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTSliding ferroelectric memories and synapsesXiuzhen Li, Biao Qin, Yaxian Wang, Yue Xi et al.Nature·2025·10.1002/adma.202303122·arXiv:2401.16150AbstractWe demonstrate rewritable, non-volatile memory devices at room temperature using a two-dimensional sliding ferroelectric semiconductor of rhombohedral-stacked bilayer MoS₂ grown by a stacking-controlled technique. The devices show a large memory window, high conductance ratio, long retention, high endurance, flexible operation, synaptic plasticity, and image recognition with high accuracy.Read more
Transferred inch-scale R-stacked bilayer MoS₂ device channel on a silicon substrate with a 20 nm Al₂O₃ dielectric layer for device fabrication.6 characterizations4 properties7 figuresExperimentalMoS₂Studied MaterialAl₂O₃Substrate / DielectricSiSubstrate / DielectricExpand
As-grown R-stacked bilayer MoS₂ sample on a metal substrate used for PFM measurement of ferroelectric switching.2 characterizations7 properties2 figuresExperimentalMoS₂Studied MaterialExpand
