Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution

Minjie Ye; Yuzi Yang; Jiangtao Wei; Weilong Qin; Hao Hong; Dong Han; Jianping Ni; Zhiyi Liu; Po-Chung Huang; Cheng-Chang Yu; Chao-Yi Fang; Entsai Lin; Zewen Liu; Shaomin Chen

doi:10.48550/arXiv.2604.23923

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputed Raman

Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution

Minjie Ye, Yuzi Yang, Jiangtao Wei, Weilong Qin et al.

arXiv preprint·2026·arXiv:2604.23923

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Vertical homoepitaxial GaN α-particle detector device with n−-GaN epitaxial layer, n+-GaN substrate, Schottky contact, ohmic contact, and guard ring.

2 preparations3 characterizations11 properties3 figures

ExperimentalGaNStudied Material

Materials

GaN

Studied Material

Also known as

gallium nitride

studied material

Capping Or Contact

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Sheet Resistance	reverse leakage current	2.195nA	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Carrier Concentration	effective net donor concentration	2.052cm⁻³	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Carrier Concentration	effective net donor concentration	1.905cm⁻³	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Carrier Concentration	effective net donor concentration	2.199cm⁻³	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Sheet Resistance	depletion width	12.46um	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Sheet Resistance	depletion width	11.99um	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Sheet Resistance	depletion width	11.59um	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Sheet Resistance	maximum-minimum depletion width difference	0.87um	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Threshold Voltage	equivalent geometric tilt angle	0.05deg	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet On Off Ratio	intrinsic energy resolution	2.69%	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet On Off Ratio	charge collection efficiency	95.9%	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Optical Band Gap	band gap	3.4eV	GaN	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Sheet Resistance	reverse leakage current	2.195nA	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Carrier Concentration	effective net donor concentration	2.052cm⁻³	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Carrier Concentration	effective net donor concentration	1.905cm⁻³	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Carrier Concentration	effective net donor concentration	2.199cm⁻³	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Sheet Resistance	depletion width	12.46um	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Sheet Resistance	depletion width	11.99um	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Sheet Resistance	depletion width	11.59um	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Sheet Resistance	maximum-minimum depletion width difference	0.87um	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Threshold Voltage	equivalent geometric tilt angle	0.05deg	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet On Off Ratio	intrinsic energy resolution	2.69%	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet On Off Ratio	charge collection efficiency	95.9%	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Optical Band Gap	band gap	3.4eV	GaN	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Sheet Resistance	reverse leakage current	2.195nA	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Carrier Concentration	effective net donor concentration	2.052cm⁻³	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Carrier Concentration	effective net donor concentration	1.905cm⁻³	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Carrier Concentration	effective net donor concentration	2.199cm⁻³	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Sheet Resistance	depletion width	12.46um	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Sheet Resistance	depletion width	11.99um	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Sheet Resistance	depletion width	11.59um	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Sheet Resistance	maximum-minimum depletion width difference	0.87um	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Threshold Voltage	equivalent geometric tilt angle	0.05deg	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet On Off Ratio	intrinsic energy resolution	2.69%	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet On Off Ratio	charge collection efficiency	95.9%	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Optical Band Gap	band gap	3.4eV	GaN	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Sheet Resistance	reverse leakage current	2.195nA	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Carrier Concentration	effective net donor concentration	2.052cm⁻³	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Carrier Concentration	effective net donor concentration	1.905cm⁻³	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Carrier Concentration	effective net donor concentration	2.199cm⁻³	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Sheet Resistance	depletion width	12.46um	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Sheet Resistance	depletion width	11.99um	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Sheet Resistance	depletion width	11.59um	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Sheet Resistance	maximum-minimum depletion width difference	0.87um	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet Threshold Voltage	equivalent geometric tilt angle	0.05deg	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet On Off Ratio	intrinsic energy resolution	2.69%	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Fet On Off Ratio	charge collection efficiency	95.9%	GaN	Vertical homoepitaxial GaN α-particle detector device with n		—
Optical Band Gap	band gap	3.4eV	GaN	—	—	—

Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution

Samples

Vertical homoepitaxial GaN α-particle detector device with n−-GaN epitaxial layer, n+-GaN substrate, Schottky contact, ohmic contact, and guard ring.

Materials

Why these are connected

Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution

Samples

Vertical homoepitaxial GaN α-particle detector device with n−-GaN epitaxial layer, n+-GaN substrate, Schottky contact, ohmic contact, and guard ring.

Materials

Why these are connected

Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution

Samples

Vertical homoepitaxial GaN α-particle detector device with n−-GaN epitaxial layer, n+-GaN substrate, Schottky contact, ohmic contact, and guard ring.

Materials

Why these are connected

Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution

Samples

Vertical homoepitaxial GaN α-particle detector device with n−-GaN epitaxial layer, n+-GaN substrate, Schottky contact, ohmic contact, and guard ring.

Materials

Why these are connected

Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution

Samples

Vertical homoepitaxial GaN α-particle detector device with n−-GaN epitaxial layer, n+-GaN substrate, Schottky contact, ohmic contact, and guard ring.

Materials

Why these are connected

Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution

Samples

Vertical homoepitaxial GaN α-particle detector device with n−-GaN epitaxial layer, n+-GaN substrate, Schottky contact, ohmic contact, and guard ring.

Materials

Why these are connected

Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution

Samples

Vertical homoepitaxial GaN α-particle detector device with n−-GaN epitaxial layer, n+-GaN substrate, Schottky contact, ohmic contact, and guard ring.

Materials

Why these are connected

Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution

Samples

Vertical homoepitaxial GaN α-particle detector device with n−-GaN epitaxial layer, n+-GaN substrate, Schottky contact, ohmic contact, and guard ring.

Materials

Why these are connected

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Growth

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