Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
8 preparations5 characterizations22 properties3 figures
3 preparations2 characterizations4 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Energy–time entanglement from a monolithically integrated quantum dot on silicon
GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution
Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors
Circularly polarized cavity-mode emission from quantum dots in a semiconductor three-dimensional chiral photonic crystal
High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications
Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors
Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
Excited-State Trions in a Quantum Well
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
8 preparations5 characterizations22 properties3 figures
3 preparations2 characterizations4 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Energy–time entanglement from a monolithically integrated quantum dot on silicon
GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution
Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors
Circularly polarized cavity-mode emission from quantum dots in a semiconductor three-dimensional chiral photonic crystal
High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications
Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors
Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
Excited-State Trions in a Quantum Well
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
8 preparations5 characterizations22 properties3 figures
3 preparations2 characterizations4 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Energy–time entanglement from a monolithically integrated quantum dot on silicon
GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution
Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors
Circularly polarized cavity-mode emission from quantum dots in a semiconductor three-dimensional chiral photonic crystal
High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications
Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors
Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
Excited-State Trions in a Quantum Well
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
8 preparations5 characterizations22 properties3 figures
3 preparations2 characterizations4 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Energy–time entanglement from a monolithically integrated quantum dot on silicon
GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution
Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors
Circularly polarized cavity-mode emission from quantum dots in a semiconductor three-dimensional chiral photonic crystal
High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications
Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors
Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
Excited-State Trions in a Quantum Well
