Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations4 characterizations17 properties5 figures
Related documents with shared materials, methods, properties, or citations.
Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy
Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution
Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
METHOD AND SYSTEM FOR CARBON DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES
Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors
Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide-Band-Gap MgSiN2 Thin Films
High-Efficiency Three-Wave and Four-Wave Phonon Mixing Via Electron-Mediated Nonlinearity in Semiconductor-Piezoelectric Heterostructures
STACKING FAULT-FREE SEMIPOLAR AND NONPOLAR GAN GROWN ON FOREIGN SUBSTRATES BY ELIMINATING THE NITROGEN POLAR FACETS DURING THE GROWTH
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN
METHOD OF ZINC OXIDE FILM GROWN ON THE EPITAXIAL LATERAL OVERGROWTH GALLIUM NITRIDE TEMPLATE
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations4 characterizations17 properties5 figures
Related documents with shared materials, methods, properties, or citations.
Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy
Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution
Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
METHOD AND SYSTEM FOR CARBON DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES
Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors
Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide-Band-Gap MgSiN2 Thin Films
High-Efficiency Three-Wave and Four-Wave Phonon Mixing Via Electron-Mediated Nonlinearity in Semiconductor-Piezoelectric Heterostructures
STACKING FAULT-FREE SEMIPOLAR AND NONPOLAR GAN GROWN ON FOREIGN SUBSTRATES BY ELIMINATING THE NITROGEN POLAR FACETS DURING THE GROWTH
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN
METHOD OF ZINC OXIDE FILM GROWN ON THE EPITAXIAL LATERAL OVERGROWTH GALLIUM NITRIDE TEMPLATE
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations4 characterizations17 properties5 figures
Related documents with shared materials, methods, properties, or citations.
Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy
Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution
Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
METHOD AND SYSTEM FOR CARBON DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES
Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors
Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide-Band-Gap MgSiN2 Thin Films
High-Efficiency Three-Wave and Four-Wave Phonon Mixing Via Electron-Mediated Nonlinearity in Semiconductor-Piezoelectric Heterostructures
STACKING FAULT-FREE SEMIPOLAR AND NONPOLAR GAN GROWN ON FOREIGN SUBSTRATES BY ELIMINATING THE NITROGEN POLAR FACETS DURING THE GROWTH
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN
METHOD OF ZINC OXIDE FILM GROWN ON THE EPITAXIAL LATERAL OVERGROWTH GALLIUM NITRIDE TEMPLATE
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations4 characterizations17 properties5 figures
Related documents with shared materials, methods, properties, or citations.
Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy
Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution
Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
METHOD AND SYSTEM FOR CARBON DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES
Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors
Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide-Band-Gap MgSiN2 Thin Films
High-Efficiency Three-Wave and Four-Wave Phonon Mixing Via Electron-Mediated Nonlinearity in Semiconductor-Piezoelectric Heterostructures
STACKING FAULT-FREE SEMIPOLAR AND NONPOLAR GAN GROWN ON FOREIGN SUBSTRATES BY ELIMINATING THE NITROGEN POLAR FACETS DURING THE GROWTH
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN
METHOD OF ZINC OXIDE FILM GROWN ON THE EPITAXIAL LATERAL OVERGROWTH GALLIUM NITRIDE TEMPLATE
