Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations5 characterizations13 properties4 figures
Related documents with shared materials, methods, properties, or citations.
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution
Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors
Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures
Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels
CURRENT APERTURE VERTICAL ELECTRON TRANSISTORS WITH AMMONIA MOLECULAR BEAM EPITAXY GROWN P-TYPE GALLIUM NITRIDE AS A CURRENT BLOCKING LAYER
Mobility Extraction and Analysis of GaN HEMTs for RF Applications Using TCAD and Experimental Data
High-Performance Self-Powered Photoelectrochemical Detection Using Scalable InGaN/GaN Nanowire Arrays
High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN
Enhanced optical performance of GaN Micro-light-emitting diodes with a single porous layer
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations5 characterizations13 properties4 figures
Related documents with shared materials, methods, properties, or citations.
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution
Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors
Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures
Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels
CURRENT APERTURE VERTICAL ELECTRON TRANSISTORS WITH AMMONIA MOLECULAR BEAM EPITAXY GROWN P-TYPE GALLIUM NITRIDE AS A CURRENT BLOCKING LAYER
Mobility Extraction and Analysis of GaN HEMTs for RF Applications Using TCAD and Experimental Data
High-Performance Self-Powered Photoelectrochemical Detection Using Scalable InGaN/GaN Nanowire Arrays
High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN
Enhanced optical performance of GaN Micro-light-emitting diodes with a single porous layer
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations5 characterizations13 properties4 figures
Related documents with shared materials, methods, properties, or citations.
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution
Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors
Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures
Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels
CURRENT APERTURE VERTICAL ELECTRON TRANSISTORS WITH AMMONIA MOLECULAR BEAM EPITAXY GROWN P-TYPE GALLIUM NITRIDE AS A CURRENT BLOCKING LAYER
Mobility Extraction and Analysis of GaN HEMTs for RF Applications Using TCAD and Experimental Data
High-Performance Self-Powered Photoelectrochemical Detection Using Scalable InGaN/GaN Nanowire Arrays
High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN
Enhanced optical performance of GaN Micro-light-emitting diodes with a single porous layer
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations5 characterizations13 properties4 figures
Related documents with shared materials, methods, properties, or citations.
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution
Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors
Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures
Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels
CURRENT APERTURE VERTICAL ELECTRON TRANSISTORS WITH AMMONIA MOLECULAR BEAM EPITAXY GROWN P-TYPE GALLIUM NITRIDE AS A CURRENT BLOCKING LAYER
Mobility Extraction and Analysis of GaN HEMTs for RF Applications Using TCAD and Experimental Data
High-Performance Self-Powered Photoelectrochemical Detection Using Scalable InGaN/GaN Nanowire Arrays
High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN
Enhanced optical performance of GaN Micro-light-emitting diodes with a single porous layer
