Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations15 properties12 figures
1 preparation2 characterizations6 properties12 figures
1 preparation1 characterization1 property11 figures
Related documents with shared materials, methods, properties, or citations.
Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels
Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution
Unlocking High Performance, Ultra-Low Power Van der Waals Transistors: Towards Back-End-of-Line In-Sensor Machine Vision Applications
Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors
Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
Depletion-to-Enhancement Mode Transition and Strongly Suppressed Hysteresis in Surface Engineered Multilayer MoS2 FETs
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
CURRENT APERTURE VERTICAL ELECTRON TRANSISTORS WITH AMMONIA MOLECULAR BEAM EPITAXY GROWN P-TYPE GALLIUM NITRIDE AS A CURRENT BLOCKING LAYER
High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations15 properties12 figures
1 preparation2 characterizations6 properties12 figures
1 preparation1 characterization1 property11 figures
Related documents with shared materials, methods, properties, or citations.
Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels
Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution
Unlocking High Performance, Ultra-Low Power Van der Waals Transistors: Towards Back-End-of-Line In-Sensor Machine Vision Applications
Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors
Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
Depletion-to-Enhancement Mode Transition and Strongly Suppressed Hysteresis in Surface Engineered Multilayer MoS2 FETs
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
CURRENT APERTURE VERTICAL ELECTRON TRANSISTORS WITH AMMONIA MOLECULAR BEAM EPITAXY GROWN P-TYPE GALLIUM NITRIDE AS A CURRENT BLOCKING LAYER
High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations15 properties12 figures
1 preparation2 characterizations6 properties12 figures
1 preparation1 characterization1 property11 figures
Related documents with shared materials, methods, properties, or citations.
Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels
Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution
Unlocking High Performance, Ultra-Low Power Van der Waals Transistors: Towards Back-End-of-Line In-Sensor Machine Vision Applications
Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors
Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
Depletion-to-Enhancement Mode Transition and Strongly Suppressed Hysteresis in Surface Engineered Multilayer MoS2 FETs
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
CURRENT APERTURE VERTICAL ELECTRON TRANSISTORS WITH AMMONIA MOLECULAR BEAM EPITAXY GROWN P-TYPE GALLIUM NITRIDE AS A CURRENT BLOCKING LAYER
High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations15 properties12 figures
1 preparation2 characterizations6 properties12 figures
1 preparation1 characterization1 property11 figures
Related documents with shared materials, methods, properties, or citations.
Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels
Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution
Unlocking High Performance, Ultra-Low Power Van der Waals Transistors: Towards Back-End-of-Line In-Sensor Machine Vision Applications
Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors
Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
Depletion-to-Enhancement Mode Transition and Strongly Suppressed Hysteresis in Surface Engineered Multilayer MoS2 FETs
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
CURRENT APERTURE VERTICAL ELECTRON TRANSISTORS WITH AMMONIA MOLECULAR BEAM EPITAXY GROWN P-TYPE GALLIUM NITRIDE AS A CURRENT BLOCKING LAYER
High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN
