Research paper
Experimental CharacterizationDefect-engineering hexagonal boron nitride using low-energy Ar+ irradiation
Manuel Längle, Barbara Maria Mayer, Jacob Madsen, Diana Propst et al.
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| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Defect Concentration | intrinsic defect concentration | 0.027nm⁻² | — | |||
| Defect Concentration | defect concentration | 0.03nm⁻² | — | |||
| Defect Fraction | B single vacancy | 55% | — | |||
| Defect Fraction | N single vacancy | 8% | — | |||
| Defect Fraction | double vacancy | 20% | — | |||
| Defect Fraction | more complex vacancy structure | 16% | — | |||
| Defect Concentration | defect concentration | 0.3nm⁻² | — | |||
| Defect Fraction | B single vacancy | 55.6% | — | |||
| Defect Fraction | N single vacancy | 11.5% | — | |||
| Defect Fraction | double vacancy | 14.4% | — | |||
| Defect Fraction | more complex vacancy structure | 18.4% | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Defect Concentration | intrinsic defect concentration | 0.027nm⁻² | — | |||
| Defect Concentration | defect concentration | 0.03nm⁻² | — | |||
| Defect Fraction | B single vacancy | 55% | — | |||
| Defect Fraction | N single vacancy | 8% | — | |||
| Defect Fraction | double vacancy | 20% | — | |||
| Defect Fraction | more complex vacancy structure | 16% | — | |||
| Defect Concentration | defect concentration | 0.3nm⁻² | — | |||
| Defect Fraction | B single vacancy | 55.6% | — | |||
| Defect Fraction | N single vacancy | 11.5% | — | |||
| Defect Fraction | double vacancy | 14.4% | — | |||
| Defect Fraction | more complex vacancy structure | 18.4% | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Defect Concentration | intrinsic defect concentration | 0.027nm⁻² | — | |||
| Defect Concentration | defect concentration | 0.03nm⁻² | — | |||
| Defect Fraction | B single vacancy | 55% | — | |||
| Defect Fraction | N single vacancy | 8% | — | |||
| Defect Fraction | double vacancy | 20% | — | |||
| Defect Fraction | more complex vacancy structure | 16% | — | |||
| Defect Concentration | defect concentration | 0.3nm⁻² | — | |||
| Defect Fraction | B single vacancy | 55.6% | — | |||
| Defect Fraction | N single vacancy | 11.5% | — | |||
| Defect Fraction | double vacancy | 14.4% | — | |||
| Defect Fraction | more complex vacancy structure | 18.4% | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Defect Concentration | intrinsic defect concentration | 0.027nm⁻² | — | |||
| Defect Concentration | defect concentration | 0.03nm⁻² | — | |||
| Defect Fraction | B single vacancy | 55% | — | |||
| Defect Fraction | N single vacancy | 8% | — | |||
| Defect Fraction | double vacancy | 20% | — | |||
| Defect Fraction | more complex vacancy structure | 16% | — | |||
| Defect Concentration | defect concentration | 0.3nm⁻² | — | |||
| Defect Fraction | B single vacancy | 55.6% | — | |||
| Defect Fraction | N single vacancy | 11.5% | — | |||
| Defect Fraction | double vacancy | 14.4% | — | |||
| Defect Fraction | more complex vacancy structure | 18.4% | — |