Research paperExperimental CharacterizationMagnetic field imaging by hBN quantum sensor nanoarrayKento Sasaki, Yuki Nakamura, Hao Gu, Moeta Tsukamoto et al.arXiv preprint·2023·10.1038/s41567-022-01815-5·arXiv:2301.12645AbstractWe demonstrate magnetic field imaging with a boron vacancy (V−B) defects array in hexagonal boron nitride with a few 10 nm thickness. V−B sensor spots with a size of (100 nm)2 are arranged periodically with nanoscale accuracy using a helium ion microscope and attached tightly to a gold wire. The sensor array allows visualization of the magnetic field induced by the current in a straight micro wire with high spatial resolution. Each sensor exhibits a practical sensitivity suitable for quantum materials research.Read more
Device with hBN flake attached over a 3200 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.3 preparations2 characterizations9 properties3 figuresExperimentalhBNStudied MaterialAuCapping Or ContactTiCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device with hBN flake attached over a 400 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.3 preparations2 characterizations9 properties3 figuresExperimentalhBNStudied MaterialAuCapping Or ContactTiCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental CharacterizationMagnetic field imaging by hBN quantum sensor nanoarrayKento Sasaki, Yuki Nakamura, Hao Gu, Moeta Tsukamoto et al.arXiv preprint·2023·10.1038/s41567-022-01815-5·arXiv:2301.12645AbstractWe demonstrate magnetic field imaging with a boron vacancy (V−B) defects array in hexagonal boron nitride with a few 10 nm thickness. V−B sensor spots with a size of (100 nm)2 are arranged periodically with nanoscale accuracy using a helium ion microscope and attached tightly to a gold wire. The sensor array allows visualization of the magnetic field induced by the current in a straight micro wire with high spatial resolution. Each sensor exhibits a practical sensitivity suitable for quantum materials research.Read more
Device with hBN flake attached over a 3200 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.3 preparations2 characterizations9 properties3 figuresExperimentalhBNStudied MaterialAuCapping Or ContactTiCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device with hBN flake attached over a 400 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.3 preparations2 characterizations9 properties3 figuresExperimentalhBNStudied MaterialAuCapping Or ContactTiCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental CharacterizationMagnetic field imaging by hBN quantum sensor nanoarrayKento Sasaki, Yuki Nakamura, Hao Gu, Moeta Tsukamoto et al.arXiv preprint·2023·10.1038/s41567-022-01815-5·arXiv:2301.12645AbstractWe demonstrate magnetic field imaging with a boron vacancy (V−B) defects array in hexagonal boron nitride with a few 10 nm thickness. V−B sensor spots with a size of (100 nm)2 are arranged periodically with nanoscale accuracy using a helium ion microscope and attached tightly to a gold wire. The sensor array allows visualization of the magnetic field induced by the current in a straight micro wire with high spatial resolution. Each sensor exhibits a practical sensitivity suitable for quantum materials research.Read more
Device with hBN flake attached over a 3200 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.3 preparations2 characterizations9 properties3 figuresExperimentalhBNStudied MaterialAuCapping Or ContactTiCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device with hBN flake attached over a 400 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.3 preparations2 characterizations9 properties3 figuresExperimentalhBNStudied MaterialAuCapping Or ContactTiCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental CharacterizationMagnetic field imaging by hBN quantum sensor nanoarrayKento Sasaki, Yuki Nakamura, Hao Gu, Moeta Tsukamoto et al.arXiv preprint·2023·10.1038/s41567-022-01815-5·arXiv:2301.12645AbstractWe demonstrate magnetic field imaging with a boron vacancy (V−B) defects array in hexagonal boron nitride with a few 10 nm thickness. V−B sensor spots with a size of (100 nm)2 are arranged periodically with nanoscale accuracy using a helium ion microscope and attached tightly to a gold wire. The sensor array allows visualization of the magnetic field induced by the current in a straight micro wire with high spatial resolution. Each sensor exhibits a practical sensitivity suitable for quantum materials research.Read more
Device with hBN flake attached over a 3200 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.3 preparations2 characterizations9 properties3 figuresExperimentalhBNStudied MaterialAuCapping Or ContactTiCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device with hBN flake attached over a 400 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.3 preparations2 characterizations9 properties3 figuresExperimentalhBNStudied MaterialAuCapping Or ContactTiCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
