Exploring methods for creation of Boron-vacancies in hexagonal Boron Nitride exfoliated from bulk crystal | Matter42 Literature

Copyright © 2026 Matter42. All rights reserved.

Exploring methods for creation of Boron-vacancies in hexagonal Boron Nitride exfoliated from bulk crystal | Matter42 Literature

Materials

hexagonal boron nitride

hBN

Studied Material

Also known as

hBNhexagonal boron-nitride

studied material

Silicon

Si

Substrate / Dielectric

Also known as

Si

substrate or dielectric

Silicon dioxide

SiO₂

Substrate / Dielectric

Also known as

SiO₂

Variables

thickness_nm= 285

substrate or dielectric

Gold

Au

Capping Or Contact

Also known as

gold markersgold

capping or contact

Argon

Ar

Carrier Gas

Also known as

Ar

carrier gas

Hydrogen

H

Gas Species

Also known as

H₂

gas species

Nitrogen

N

Reactant Species

Also known as

N ionN

reactant species

Oxygen

O

Reactant Species

Also known as

O ionO

reactant species

Poly(vinyl alcohol)

PVA

Substrate / Dielectric

Also known as

PVA

substrate or dielectric

Carbon film

C

Substrate / Dielectric

Also known as

carbon film

substrate or dielectric

Bulk hexagonal boron nitride crystal

hBN

Reference Material

Also known as

bulk crystal

reference material

Processing

1

Exfoliation

Step 1

Process Details

tool:blue tape (Nitto)

source:bulk crystal

Samples:Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g

Characterization

Optical

OpticalExperimental

Conditions

modeconfocal scan / microscopic imaging

Figure References

Figure 2

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	SiO₂ thickness	285nm	SiO₂	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₂ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₃ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₂ transferred to Si/285 nm SiO₂ with g		—
Sample Thickness	hBN flake thickness	100 / 150nm	hBN	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g		—
PL Peak	VB- emission	800nm	hBN	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₂ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₃ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₂ transferred to Si/285 nm SiO₂ with g		—
Spin Resonance Frequency	zero-field resonance	3.47GHz	hBN	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₂ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₃ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₂ transferred to Si/285 nm SiO₂ with g		—
Fluence	N ion fluence	625000000000000cm⁻²	N	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g		—
Fluence	O ion fluence	18100000000000cm⁻²	O	Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g		—
Irradiation Energy	FIB ion energy	12keV	N	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₂ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₃ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₂ transferred to Si/285 nm SiO₂ with g		—
Irradiation Energy	FIB ion energy	12keV	O	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₂ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₃ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₂ transferred to Si/285 nm SiO₂ with g		—

Simulations

Other Computational

SRIM ion stopping simulation of 12 keV ion depth distribution in hBNSRIM

Settings

ion speciesN

ion energy keV12

distribution mean nm33.3

distribution sigma nm12.1

Conditions

Materials

hexagonal boron nitride

hBN

Studied Material

Also known as

hBNhexagonal boron-nitride

studied material

Silicon

Si

Substrate / Dielectric

Also known as

Si

substrate or dielectric

Silicon dioxide

SiO₂

Substrate / Dielectric

Also known as

SiO₂

Variables

thickness_nm= 285

substrate or dielectric

Gold

Au

Capping Or Contact

Also known as

gold markersgold

capping or contact

Argon

Ar

Carrier Gas

Also known as

Ar

carrier gas

Hydrogen

H

Gas Species

Also known as

H₂

gas species

Nitrogen

N

Reactant Species

Also known as

N ionN

reactant species

Oxygen

O

Reactant Species

Also known as

O ionO

reactant species

Poly(vinyl alcohol)

PVA

Substrate / Dielectric

Also known as

PVA

substrate or dielectric

Carbon film

C

Substrate / Dielectric

Also known as

carbon film

substrate or dielectric

Bulk hexagonal boron nitride crystal

hBN

Reference Material

Also known as

bulk crystal

reference material

Processing

1

Exfoliation

Step 1

Process Details

tool:blue tape (Nitto)

source:bulk crystal

Samples:Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g

Characterization

Optical

OpticalExperimental

Conditions

modeconfocal scan / microscopic imaging

Figure References

Figure 2

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	SiO₂ thickness	285nm	SiO₂	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₂ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₃ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₂ transferred to Si/285 nm SiO₂ with g		—
Sample Thickness	hBN flake thickness	100 / 150nm	hBN	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g		—
PL Peak	VB- emission	800nm	hBN	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₂ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₃ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₂ transferred to Si/285 nm SiO₂ with g		—
Spin Resonance Frequency	zero-field resonance	3.47GHz	hBN	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₂ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₃ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₂ transferred to Si/285 nm SiO₂ with g		—
Fluence	N ion fluence	625000000000000cm⁻²	N	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g		—
Fluence	O ion fluence	18100000000000cm⁻²	O	Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g		—
Irradiation Energy	FIB ion energy	12keV	N	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₂ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₃ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₂ transferred to Si/285 nm SiO₂ with g		—
Irradiation Energy	FIB ion energy	12keV	O	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₂ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₃ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₂ transferred to Si/285 nm SiO₂ with g		—

Simulations

Other Computational

SRIM ion stopping simulation of 12 keV ion depth distribution in hBNSRIM

Settings

ion speciesN

ion energy keV12

distribution mean nm33.3

distribution sigma nm12.1

Conditions

Materials

hexagonal boron nitride

hBN

Studied Material

Also known as

hBNhexagonal boron-nitride

studied material

Silicon

Si

Substrate / Dielectric

Also known as

Si

substrate or dielectric

Silicon dioxide

SiO₂

Substrate / Dielectric

Also known as

SiO₂

Variables

thickness_nm= 285

substrate or dielectric

Gold

Au

Capping Or Contact

Also known as

gold markersgold

capping or contact

Argon

Ar

Carrier Gas

Also known as

Ar

carrier gas

Hydrogen

H

Gas Species

Also known as

H₂

gas species

Nitrogen

N

Reactant Species

Also known as

N ionN

reactant species

Oxygen

O

Reactant Species

Also known as

O ionO

reactant species

Poly(vinyl alcohol)

PVA

Substrate / Dielectric

Also known as

PVA

substrate or dielectric

Carbon film

C

Substrate / Dielectric

Also known as

carbon film

substrate or dielectric

Bulk hexagonal boron nitride crystal

hBN

Reference Material

Also known as

bulk crystal

reference material

Processing

1

Exfoliation

Step 1

Process Details

tool:blue tape (Nitto)

source:bulk crystal

Samples:Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g

Characterization

Optical

OpticalExperimental

Conditions

modeconfocal scan / microscopic imaging

Figure References

Figure 2

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	SiO₂ thickness	285nm	SiO₂	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₂ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₃ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₂ transferred to Si/285 nm SiO₂ with g		—
Sample Thickness	hBN flake thickness	100 / 150nm	hBN	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g		—
PL Peak	VB- emission	800nm	hBN	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₂ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₃ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₂ transferred to Si/285 nm SiO₂ with g		—
Spin Resonance Frequency	zero-field resonance	3.47GHz	hBN	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₂ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₃ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₂ transferred to Si/285 nm SiO₂ with g		—
Fluence	N ion fluence	625000000000000cm⁻²	N	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g		—
Fluence	O ion fluence	18100000000000cm⁻²	O	Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g		—
Irradiation Energy	FIB ion energy	12keV	N	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₂ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₃ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₂ transferred to Si/285 nm SiO₂ with g		—
Irradiation Energy	FIB ion energy	12keV	O	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₂ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₃ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₂ transferred to Si/285 nm SiO₂ with g		—

Simulations

Other Computational

SRIM ion stopping simulation of 12 keV ion depth distribution in hBNSRIM

Settings

ion speciesN

ion energy keV12

distribution mean nm33.3

distribution sigma nm12.1

Conditions

Materials

hexagonal boron nitride

hBN

Studied Material

Also known as

hBNhexagonal boron-nitride

studied material

Silicon

Si

Substrate / Dielectric

Also known as

Si

substrate or dielectric

Silicon dioxide

SiO₂

Substrate / Dielectric

Also known as

SiO₂

Variables

thickness_nm= 285

substrate or dielectric

Gold

Au

Capping Or Contact

Also known as

gold markersgold

capping or contact

Argon

Ar

Carrier Gas

Also known as

Ar

carrier gas

Hydrogen

H

Gas Species

Also known as

H₂

gas species

Nitrogen

N

Reactant Species

Also known as

N ionN

reactant species

Oxygen

O

Reactant Species

Also known as

O ionO

reactant species

Poly(vinyl alcohol)

PVA

Substrate / Dielectric

Also known as

PVA

substrate or dielectric

Carbon film

C

Substrate / Dielectric

Also known as

carbon film

substrate or dielectric

Bulk hexagonal boron nitride crystal

hBN

Reference Material

Also known as

bulk crystal

reference material

Processing

1

Exfoliation

Step 1

Process Details

tool:blue tape (Nitto)

source:bulk crystal

Samples:Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g

Characterization

Optical

OpticalExperimental

Conditions

modeconfocal scan / microscopic imaging

Figure References

Figure 2

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	SiO₂ thickness	285nm	SiO₂	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₂ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₃ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₂ transferred to Si/285 nm SiO₂ with g		—
Sample Thickness	hBN flake thickness	100 / 150nm	hBN	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g		—
PL Peak	VB- emission	800nm	hBN	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₂ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₃ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₂ transferred to Si/285 nm SiO₂ with g		—
Spin Resonance Frequency	zero-field resonance	3.47GHz	hBN	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₂ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₃ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₂ transferred to Si/285 nm SiO₂ with g		—
Fluence	N ion fluence	625000000000000cm⁻²	N	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g		—
Fluence	O ion fluence	18100000000000cm⁻²	O	Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g		—
Irradiation Energy	FIB ion energy	12keV	N	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₂ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₃ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₂ transferred to Si/285 nm SiO₂ with g		—
Irradiation Energy	FIB ion energy	12keV	O	Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₂ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake N₃ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with g Exfoliated hBN flake O₂ transferred to Si/285 nm SiO₂ with g		—

Simulations

Other Computational

SRIM ion stopping simulation of 12 keV ion depth distribution in hBNSRIM

Settings

ion speciesN

ion energy keV12

distribution mean nm33.3

distribution sigma nm12.1

Conditions