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Exploring methods for creation of Boron-vacancies in hexagonal Boron Nitride exfoliated from bulk crystal | Matter42 Literature

Paper

Atlas literature

Research paper

Experimental CharacterizationOther Computational

Exploring methods for creation of Boron-vacancies in hexagonal Boron Nitride exfoliated from bulk crystal

T. Zabelotsky, S. Singh, G. Haim, R. Malkinson et al.

arXiv·2023·10.1021/nl200758b·arXiv:2305.05241

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with gold markers, cleaned in forming gas, then treated by uniform nitrogen FIB implantation; reported thickness 100/150 nm.

5 preparations4 characterizations7 properties1 figure

ExperimentalhBNStudied MaterialSiSubstrate / DielectricSiO₂Substrate / DielectricAuCapping Or Contact

Exfoliated hBN flake N₂ transferred to Si/285 nm SiO₂ with gold markers, cleaned in forming gas, then nitrogen FIB dose-tested in 3x3 um2 regions; thickness 73 nm.

5 preparations3 characterizations5 properties1 figure

ExperimentalhBNStudied MaterialSiSubstrate / DielectricSiO₂Substrate / DielectricAuCapping Or Contact

Exfoliated hBN flake N₃ transferred to Si/285 nm SiO₂ with gold markers, cleaned on a hot plate in air, then nitrogen FIB dose-tested; thickness not stated.

6 preparations3 characterizations5 properties1 figure

ExperimentalhBNStudied MaterialSiSubstrate / DielectricSiO₂Substrate / DielectricAuCapping Or Contact

Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with gold markers, cleaned in forming gas, then oxygen FIB implantation; thickness 114 nm.

5 preparations3 characterizations6 properties1 figure

ExperimentalhBNStudied MaterialSiSubstrate / DielectricSiO₂Substrate / DielectricAuCapping Or Contact

Exfoliated hBN flake O₂ transferred to Si/285 nm SiO₂ with gold markers, cleaned in forming gas, then oxygen FIB dose-tested; thickness 83 nm.

5 preparations3 characterizations5 properties1 figure

ExperimentalhBNStudied MaterialSiSubstrate / DielectricSiO₂Substrate / DielectricAuCapping Or Contact

hBN flakes transferred from Si to a TEM gold grid with carbon film using PVA and water for electron irradiation experiments.

4 preparations2 characterizations1 figure

ExperimentalhBNStudied MaterialCSubstrate / DielectricPVASubstrate / Dielectric

Paper

Atlas literature

Research paper

Experimental CharacterizationOther Computational

Exploring methods for creation of Boron-vacancies in hexagonal Boron Nitride exfoliated from bulk crystal

T. Zabelotsky, S. Singh, G. Haim, R. Malkinson et al.

arXiv·2023·10.1021/nl200758b·arXiv:2305.05241

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Exfoliated hBN flake N₁ transferred to Si/285 nm SiO₂ with gold markers, cleaned in forming gas, then treated by uniform nitrogen FIB implantation; reported thickness 100/150 nm.

5 preparations4 characterizations7 properties1 figure

ExperimentalhBNStudied MaterialSiSubstrate / DielectricSiO₂Substrate / DielectricAuCapping Or Contact

Exfoliated hBN flake N₂ transferred to Si/285 nm SiO₂ with gold markers, cleaned in forming gas, then nitrogen FIB dose-tested in 3x3 um2 regions; thickness 73 nm.

5 preparations3 characterizations5 properties1 figure

ExperimentalhBNStudied MaterialSiSubstrate / DielectricSiO₂Substrate / DielectricAuCapping Or Contact

Exfoliated hBN flake N₃ transferred to Si/285 nm SiO₂ with gold markers, cleaned on a hot plate in air, then nitrogen FIB dose-tested; thickness not stated.

6 preparations3 characterizations5 properties1 figure

ExperimentalhBNStudied MaterialSiSubstrate / DielectricSiO₂Substrate / DielectricAuCapping Or Contact

Exfoliated hBN flake O₁ transferred to Si/285 nm SiO₂ with gold markers, cleaned in forming gas, then oxygen FIB implantation; thickness 114 nm.

5 preparations3 characterizations6 properties1 figure

ExperimentalhBNStudied MaterialSiSubstrate / DielectricSiO₂Substrate / DielectricAuCapping Or Contact

Exfoliated hBN flake O₂ transferred to Si/285 nm SiO₂ with gold markers, cleaned in forming gas, then oxygen FIB dose-tested; thickness 83 nm.

5 preparations3 characterizations5 properties1 figure

ExperimentalhBNStudied MaterialSiSubstrate / DielectricSiO₂Substrate / DielectricAuCapping Or Contact

hBN flakes transferred from Si to a TEM gold grid with carbon film using PVA and water for electron irradiation experiments.

4 preparations2 characterizations1 figure

ExperimentalhBNStudied MaterialCSubstrate / DielectricPVASubstrate / Dielectric