Patent
US 8,053,782SINGLE AND FEW-LAYER GRAPHENE BASED PHOTODETECTING DEVICES
Phaedon Avouris
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,053,782Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photodetecting device comprising: a. a substrate; b. a gate oxide layer deposited on said substrate; c. a channel layer of graphene deposited on said gate oxide layer; and d. source and drain contact regions disposed on said graphene layer Deleted:.
The photodetecting device of claim 1 wherein the c hannel layer is a single layer of graphene. De l e t e d: photodetecting
The photodetecting device of claim 1 wherein the channel layer is no more than 10 layers of graphene. Deleted: photodetecting
The photodetecting device of claim 1 wherein the substrate is comprised of silicon.
canceled
canceled
A photodetecting device comprising: 2 U.S. Application Serial No.: 12/546, 097 Amendment dated I n Response to Office Action Dated a. a substrate; b. a chan n el layer of graphene deposited on said substrate; c. source and drain contact regions disposed on said graphene layer.
The photodetecting device of claim 7 wherein the Deleted: photodetecting channel layer is a single layer of graphene.
The photodetecting device of claim 7 wherein the Deleted: photodetecting channel layer is no more than 10 layers of graphene.
The photodetecting device of claim 7 wherein the substrate is silicon.
A photodetecting device comprising: a. a substrate; b. an optical waveguide integral to said substrate; c. a channel layer of graphene deposited on said substrate; d. source and drain contact regions disposed on said graphene layer.
The photodetecting device of claim 11 wherein the channel layer is a single layer of graphene. Deleted: photodetecting 3 U.S. Application Serial No.: 12/546,097 Amendment dated In Response to Office Action Dated 13. The photodetecting device of claim 11 wherein the channel layer is no m ore than 10 layers of graphene. Deleted: photodetecting
The photodetecting device of claim 11 wherein the substrate is silicon.
The photodetecting device of claim 11 wherein the optical waveguide is a low loss material.
The photodetecting device of claim 11 wherein the optical waveguide is selected from the group consisting of silicon, silicon nitride, and oxynitride.
A photodetecting array comprised of plurality of photodetecting elements having graphene as the photodetecting layer.
A method for making a photodetecting device comprising: a. providing a substrate; b. depositing a gate oxide layer,on said substrate; Deleted: deposit c. depositing a channel layer of graphene on said gate oxide layer; Deleted: and d. patterning source and drain contact regions on said graphene l Deleted:.
The method of claim 18 wherein a single layer of graphene is deposited as the channel layer.
4 ~1 U.S. Application Serial No.: 12/546,097 Amendment dated In Response to Office Action Dated 20. The method of claim 18 wherein the channel layer is no more than 10 layers of graphene.
The method of claim 18 wherein the substrate is silicon.
The method of claim 18 further comprising: applying gate bias to create a graphene p-n junction.
Layer stacks claimed or described, ordered top of device to substrate.
back-gated graphene photodetecting device with gate oxide
graphene photodetecting device without gate oxide
graphene photodetecting device with integral optical waveguide
Materials described outside the worked examples.
graphene
C
gate oxide
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,053,782Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photodetecting device comprising: a. a substrate; b. a gate oxide layer deposited on said substrate; c. a channel layer of graphene deposited on said gate oxide layer; and d. source and drain contact regions disposed on said graphene layer Deleted:.
The photodetecting device of claim 1 wherein the c hannel layer is a single layer of graphene. De l e t e d: photodetecting
The photodetecting device of claim 1 wherein the channel layer is no more than 10 layers of graphene. Deleted: photodetecting
The photodetecting device of claim 1 wherein the substrate is comprised of silicon.
canceled
canceled
A photodetecting device comprising: 2 U.S. Application Serial No.: 12/546, 097 Amendment dated I n Response to Office Action Dated a. a substrate; b. a chan n el layer of graphene deposited on said substrate; c. source and drain contact regions disposed on said graphene layer.
The photodetecting device of claim 7 wherein the Deleted: photodetecting channel layer is a single layer of graphene.
The photodetecting device of claim 7 wherein the Deleted: photodetecting channel layer is no more than 10 layers of graphene.
The photodetecting device of claim 7 wherein the substrate is silicon.
A photodetecting device comprising: a. a substrate; b. an optical waveguide integral to said substrate; c. a channel layer of graphene deposited on said substrate; d. source and drain contact regions disposed on said graphene layer.
The photodetecting device of claim 11 wherein the channel layer is a single layer of graphene. Deleted: photodetecting 3 U.S. Application Serial No.: 12/546,097 Amendment dated In Response to Office Action Dated 13. The photodetecting device of claim 11 wherein the channel layer is no m ore than 10 layers of graphene. Deleted: photodetecting
The photodetecting device of claim 11 wherein the substrate is silicon.
The photodetecting device of claim 11 wherein the optical waveguide is a low loss material.
The photodetecting device of claim 11 wherein the optical waveguide is selected from the group consisting of silicon, silicon nitride, and oxynitride.
A photodetecting array comprised of plurality of photodetecting elements having graphene as the photodetecting layer.
A method for making a photodetecting device comprising: a. providing a substrate; b. depositing a gate oxide layer,on said substrate; Deleted: deposit c. depositing a channel layer of graphene on said gate oxide layer; Deleted: and d. patterning source and drain contact regions on said graphene l Deleted:.
The method of claim 18 wherein a single layer of graphene is deposited as the channel layer.
4 ~1 U.S. Application Serial No.: 12/546,097 Amendment dated In Response to Office Action Dated 20. The method of claim 18 wherein the channel layer is no more than 10 layers of graphene.
The method of claim 18 wherein the substrate is silicon.
The method of claim 18 further comprising: applying gate bias to create a graphene p-n junction.
Layer stacks claimed or described, ordered top of device to substrate.
back-gated graphene photodetecting device with gate oxide
graphene photodetecting device without gate oxide
graphene photodetecting device with integral optical waveguide
Materials described outside the worked examples.
graphene
C
gate oxide
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,053,782Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photodetecting device comprising: a. a substrate; b. a gate oxide layer deposited on said substrate; c. a channel layer of graphene deposited on said gate oxide layer; and d. source and drain contact regions disposed on said graphene layer Deleted:.
The photodetecting device of claim 1 wherein the c hannel layer is a single layer of graphene. De l e t e d: photodetecting
The photodetecting device of claim 1 wherein the channel layer is no more than 10 layers of graphene. Deleted: photodetecting
The photodetecting device of claim 1 wherein the substrate is comprised of silicon.
canceled
canceled
A photodetecting device comprising: 2 U.S. Application Serial No.: 12/546, 097 Amendment dated I n Response to Office Action Dated a. a substrate; b. a chan n el layer of graphene deposited on said substrate; c. source and drain contact regions disposed on said graphene layer.
The photodetecting device of claim 7 wherein the Deleted: photodetecting channel layer is a single layer of graphene.
The photodetecting device of claim 7 wherein the Deleted: photodetecting channel layer is no more than 10 layers of graphene.
The photodetecting device of claim 7 wherein the substrate is silicon.
A photodetecting device comprising: a. a substrate; b. an optical waveguide integral to said substrate; c. a channel layer of graphene deposited on said substrate; d. source and drain contact regions disposed on said graphene layer.
The photodetecting device of claim 11 wherein the channel layer is a single layer of graphene. Deleted: photodetecting 3 U.S. Application Serial No.: 12/546,097 Amendment dated In Response to Office Action Dated 13. The photodetecting device of claim 11 wherein the channel layer is no m ore than 10 layers of graphene. Deleted: photodetecting
The photodetecting device of claim 11 wherein the substrate is silicon.
The photodetecting device of claim 11 wherein the optical waveguide is a low loss material.
The photodetecting device of claim 11 wherein the optical waveguide is selected from the group consisting of silicon, silicon nitride, and oxynitride.
A photodetecting array comprised of plurality of photodetecting elements having graphene as the photodetecting layer.
A method for making a photodetecting device comprising: a. providing a substrate; b. depositing a gate oxide layer,on said substrate; Deleted: deposit c. depositing a channel layer of graphene on said gate oxide layer; Deleted: and d. patterning source and drain contact regions on said graphene l Deleted:.
The method of claim 18 wherein a single layer of graphene is deposited as the channel layer.
4 ~1 U.S. Application Serial No.: 12/546,097 Amendment dated In Response to Office Action Dated 20. The method of claim 18 wherein the channel layer is no more than 10 layers of graphene.
The method of claim 18 wherein the substrate is silicon.
The method of claim 18 further comprising: applying gate bias to create a graphene p-n junction.
Layer stacks claimed or described, ordered top of device to substrate.
back-gated graphene photodetecting device with gate oxide
graphene photodetecting device without gate oxide
graphene photodetecting device with integral optical waveguide
Materials described outside the worked examples.
graphene
C
gate oxide
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,053,782Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photodetecting device comprising: a. a substrate; b. a gate oxide layer deposited on said substrate; c. a channel layer of graphene deposited on said gate oxide layer; and d. source and drain contact regions disposed on said graphene layer Deleted:.
The photodetecting device of claim 1 wherein the c hannel layer is a single layer of graphene. De l e t e d: photodetecting
The photodetecting device of claim 1 wherein the channel layer is no more than 10 layers of graphene. Deleted: photodetecting
The photodetecting device of claim 1 wherein the substrate is comprised of silicon.
canceled
canceled
A photodetecting device comprising: 2 U.S. Application Serial No.: 12/546, 097 Amendment dated I n Response to Office Action Dated a. a substrate; b. a chan n el layer of graphene deposited on said substrate; c. source and drain contact regions disposed on said graphene layer.
The photodetecting device of claim 7 wherein the Deleted: photodetecting channel layer is a single layer of graphene.
The photodetecting device of claim 7 wherein the Deleted: photodetecting channel layer is no more than 10 layers of graphene.
The photodetecting device of claim 7 wherein the substrate is silicon.
A photodetecting device comprising: a. a substrate; b. an optical waveguide integral to said substrate; c. a channel layer of graphene deposited on said substrate; d. source and drain contact regions disposed on said graphene layer.
The photodetecting device of claim 11 wherein the channel layer is a single layer of graphene. Deleted: photodetecting 3 U.S. Application Serial No.: 12/546,097 Amendment dated In Response to Office Action Dated 13. The photodetecting device of claim 11 wherein the channel layer is no m ore than 10 layers of graphene. Deleted: photodetecting
The photodetecting device of claim 11 wherein the substrate is silicon.
The photodetecting device of claim 11 wherein the optical waveguide is a low loss material.
The photodetecting device of claim 11 wherein the optical waveguide is selected from the group consisting of silicon, silicon nitride, and oxynitride.
A photodetecting array comprised of plurality of photodetecting elements having graphene as the photodetecting layer.
A method for making a photodetecting device comprising: a. providing a substrate; b. depositing a gate oxide layer,on said substrate; Deleted: deposit c. depositing a channel layer of graphene on said gate oxide layer; Deleted: and d. patterning source and drain contact regions on said graphene l Deleted:.
The method of claim 18 wherein a single layer of graphene is deposited as the channel layer.
4 ~1 U.S. Application Serial No.: 12/546,097 Amendment dated In Response to Office Action Dated 20. The method of claim 18 wherein the channel layer is no more than 10 layers of graphene.
The method of claim 18 wherein the substrate is silicon.
The method of claim 18 further comprising: applying gate bias to create a graphene p-n junction.
Layer stacks claimed or described, ordered top of device to substrate.
back-gated graphene photodetecting device with gate oxide
graphene photodetecting device without gate oxide
graphene photodetecting device with integral optical waveguide
Materials described outside the worked examples.
graphene
C
gate oxide
Related documents with shared materials, methods, properties, or citations.
graphene photodetecting array
split-gate graphene photodetector (Fig. 3)
interdigitated graphene photodetector (Fig. 6)
silicon
Si
silicon nitride
Si₃N₄
oxynitride
SiO₂
silicon oxy-nitride
DEPOSITING A PASSIVATION LAYER ON A GRAPHENE SHEET
graphene photodetecting array
split-gate graphene photodetector (Fig. 3)
interdigitated graphene photodetector (Fig. 6)
silicon
Si
silicon nitride
Si₃N₄
oxynitride
SiO₂
silicon oxy-nitride
DEPOSITING A PASSIVATION LAYER ON A GRAPHENE SHEET
graphene photodetecting array
split-gate graphene photodetector (Fig. 3)
interdigitated graphene photodetector (Fig. 6)
silicon
Si
silicon nitride
Si₃N₄
oxynitride
SiO₂
silicon oxy-nitride
DEPOSITING A PASSIVATION LAYER ON A GRAPHENE SHEET
graphene photodetecting array
split-gate graphene photodetector (Fig. 3)
interdigitated graphene photodetector (Fig. 6)
silicon
Si
silicon nitride
Si₃N₄
oxynitride
SiO₂
silicon oxy-nitride
DEPOSITING A PASSIVATION LAYER ON A GRAPHENE SHEET