canceled

The graphene hot hole tra tor of claim l electronic com p onent of claim 15, wherein either the emitter layer or both the collector and emitter layers of the qrap hene hot hole transistor are made of p-doped silicon.

The graphene hot hole tra tor of claim l electronic com p onent of claim 15, wherein the collector barrier layer of the qrap hene hot hole transistor comprises a dielectric layer at an interface between the base layer and the collector

The grh hot holo trancistor of claim l electronic com p onent of claim 15, wherein with res p ect to the qrap hene hot hole transistor an interface dipole moment is present either at the interface between the base layer and the collector barrier layer or at an interface between the emitter layer and the emitter barrier layer or at both of these interfaces, and wherein the interface dipole moment modifies an energy position of the valence band maximum in the respective barrier layer, which is formed by either the collector barrier layer or the emitter barrier layer, with respect to the Fermi level of the unbiased graphene hot hole transistor.

The grpene hot hera oE cm l electronic com p onent of claim 15, wherein the emitter barrier layer of the qrap hene hot hole transistor has a thickness of between 1 monoatomic layer and nanometer,

The grpene hot hole tri of claim l electronic com p onent of claim 15, wherein the dielectric layer of the collector barrier layer of the qrap hene hot hole transistor is made of Si O 2, BN, molybdenum disulfide, a chalcogenide, T iC₂ HfO 2,intrinsic InN or intrinsic Si or is a layer structure comprising at least two layers made of different ones of these materials.

The graphene hot hole tno of claim l electronic com p onent of claim 15, wherein the emitter of the qrap hene hot hole transistor is made of p-doped hexagonal boron nitride (h-BN), the emitter barrier layer is made of undoped hBN, the collector barrier layer is made of undoped BN, and the collector is a metal.

The grh hot holo trAt of claim l electronic com p onent of claim 15, wherein the qrap hene hot hole transistor further eemprIsn gcom p rises a metallic back gate layer separated from the emitter by a back- gate insulator layer, and a bias contact for applying a DC bias to a capacitor formed by the emitter, the back-gate insulator layer and the back-gate layer.

The gr aphene hot hera of cm l electronic com p onent of claim 15, wherein a layer sub-stack of the layer stack of the qrap hene hot hole transistor, the layer sub-stack being formed by the emitter layer and the emitter barrier layer, is formed by a p ++ -Si(001)/i-Si(001) layer substack, a p ++ -Ge(001)/i- Ge(001) layer sub-stack, or a p ++ -GaAs(001)/i-GaAs(001) layer stack.

An electronic component comprising a graphene hot hole transistor a ccording to c laim l com p risin q:-a layer stack includin g an emitter layer, a collector layer, and a base layer that com p rises a qrap hene la y er, wherein 4 Application Serial No.: 13/721,360 Attorney Docket No. 536-009.058-the la v er stack further com p rises an emitter barrier la v er that is arranged between the base layer and the emitter layer, and a collector barrier layer that is arran g ed between the base and the collector layers and ad j acent to the grap hene layer;-either the emitter and collector la y ers are made of a material havin g p -ty pe conductivity, or the emitter layer is made of a material havin g p -ty p e conductivity and the collector layer is made of a material havin g the electrical conductivity of a metal; and wherein-the layer stack is confi g ured to allow a current of holes throu g h the layer stack in a stackin g direction p ointin g from the emitter layer throu g h the base layer to the collector la v er, under a pp lication of an in p ut volta g e that sets a base p otential at the base layer below an emitter p otential at the emitter layer and that sets a collector p otential at the collector layer below the base p otential, wherein an amount of said current of holes is controllable by an amount of a p otential difference between the base p otential and the emitter p otential.

A complementary electronic circuit comprising a graphene hot hole transistor according t-claim-1-comp risin q:-a layer stack includin g an emitter layer, a collector layer, and a base layer that com p rises a grap hene layer, wherein-the layer stack further com p rises an emitter barrier layer that is arran ged between the base la v er and the emitter la v er, and a collector barrier la v er that is arran g ed between the base and the collector layers and ad j acent to the grap hene layer; 5 Application Serial No.: 13/721,360 Attorney Docket No. 536-009.058-either the emitter and collector la y ers are made of a material havin g p -ty pe conductivity, or the emitter layer is made of a material havin g p -ty p e conductivity and the collector layer is made of a material havin g the electrical conductivity of a metal; and wherein-the layer stack is confi g ured to allow a current of holes throu g h the layer stack in a stackin g direction p ointin g from the emitter layer throu g h the base layer to the collector la v er, under a pp lication of an in p ut volta g e that sets a base p otential at the base layer below an emitter p otential at the emitter layer and that sets a collector p otential at the collector layer below the base p otential, wherein an amount of said current of holes is controllable by an amount of a p otential difference between the base p otential and the emitter p otential. and -_ a graphene hot electron transistor.

canceled

The graphene hot hole tra tor of claim l electronic com p onent of claim 15, wherein either the emitter layer or both the collector and emitter layers of the qrap hene hot hole transistor are made of p-doped silicon.

The graphene hot hole tra tor of claim l electronic com p onent of claim 15, wherein the collector barrier layer of the qrap hene hot hole transistor comprises a dielectric layer at an interface between the base layer and the collector

The grh hot holo trancistor of claim l electronic com p onent of claim 15, wherein with res p ect to the qrap hene hot hole transistor an interface dipole moment is present either at the interface between the base layer and the collector barrier layer or at an interface between the emitter layer and the emitter barrier layer or at both of these interfaces, and wherein the interface dipole moment modifies an energy position of the valence band maximum in the respective barrier layer, which is formed by either the collector barrier layer or the emitter barrier layer, with respect to the Fermi level of the unbiased graphene hot hole transistor.

The grpene hot hera oE cm l electronic com p onent of claim 15, wherein the emitter barrier layer of the qrap hene hot hole transistor has a thickness of between 1 monoatomic layer and nanometer,

The grpene hot hole tri of claim l electronic com p onent of claim 15, wherein the dielectric layer of the collector barrier layer of the qrap hene hot hole transistor is made of Si O 2, BN, molybdenum disulfide, a chalcogenide, T iC₂ HfO 2,intrinsic InN or intrinsic Si or is a layer structure comprising at least two layers made of different ones of these materials.

The graphene hot hole tno of claim l electronic com p onent of claim 15, wherein the emitter of the qrap hene hot hole transistor is made of p-doped hexagonal boron nitride (h-BN), the emitter barrier layer is made of undoped hBN, the collector barrier layer is made of undoped BN, and the collector is a metal.

The grh hot holo trAt of claim l electronic com p onent of claim 15, wherein the qrap hene hot hole transistor further eemprIsn gcom p rises a metallic back gate layer separated from the emitter by a back- gate insulator layer, and a bias contact for applying a DC bias to a capacitor formed by the emitter, the back-gate insulator layer and the back-gate layer.

The gr aphene hot hera of cm l electronic com p onent of claim 15, wherein a layer sub-stack of the layer stack of the qrap hene hot hole transistor, the layer sub-stack being formed by the emitter layer and the emitter barrier layer, is formed by a p ++ -Si(001)/i-Si(001) layer substack, a p ++ -Ge(001)/i- Ge(001) layer sub-stack, or a p ++ -GaAs(001)/i-GaAs(001) layer stack.

An electronic component comprising a graphene hot hole transistor a ccording to c laim l com p risin q:-a layer stack includin g an emitter layer, a collector layer, and a base layer that com p rises a qrap hene la y er, wherein 4 Application Serial No.: 13/721,360 Attorney Docket No. 536-009.058-the la v er stack further com p rises an emitter barrier la v er that is arranged between the base layer and the emitter layer, and a collector barrier layer that is arran g ed between the base and the collector layers and ad j acent to the grap hene layer;-either the emitter and collector la y ers are made of a material havin g p -ty pe conductivity, or the emitter layer is made of a material havin g p -ty p e conductivity and the collector layer is made of a material havin g the electrical conductivity of a metal; and wherein-the layer stack is confi g ured to allow a current of holes throu g h the layer stack in a stackin g direction p ointin g from the emitter layer throu g h the base layer to the collector la v er, under a pp lication of an in p ut volta g e that sets a base p otential at the base layer below an emitter p otential at the emitter layer and that sets a collector p otential at the collector layer below the base p otential, wherein an amount of said current of holes is controllable by an amount of a p otential difference between the base p otential and the emitter p otential.

A complementary electronic circuit comprising a graphene hot hole transistor according t-claim-1-comp risin q:-a layer stack includin g an emitter layer, a collector layer, and a base layer that com p rises a grap hene layer, wherein-the layer stack further com p rises an emitter barrier layer that is arran ged between the base la v er and the emitter la v er, and a collector barrier la v er that is arran g ed between the base and the collector layers and ad j acent to the grap hene layer; 5 Application Serial No.: 13/721,360 Attorney Docket No. 536-009.058-either the emitter and collector la y ers are made of a material havin g p -ty pe conductivity, or the emitter layer is made of a material havin g p -ty p e conductivity and the collector layer is made of a material havin g the electrical conductivity of a metal; and wherein-the layer stack is confi g ured to allow a current of holes throu g h the layer stack in a stackin g direction p ointin g from the emitter layer throu g h the base layer to the collector la v er, under a pp lication of an in p ut volta g e that sets a base p otential at the base layer below an emitter p otential at the emitter layer and that sets a collector p otential at the collector layer below the base p otential, wherein an amount of said current of holes is controllable by an amount of a p otential difference between the base p otential and the emitter p otential. and -_ a graphene hot electron transistor.

canceled

The graphene hot hole tra tor of claim l electronic com p onent of claim 15, wherein either the emitter layer or both the collector and emitter layers of the qrap hene hot hole transistor are made of p-doped silicon.

The graphene hot hole tra tor of claim l electronic com p onent of claim 15, wherein the collector barrier layer of the qrap hene hot hole transistor comprises a dielectric layer at an interface between the base layer and the collector

The grh hot holo trancistor of claim l electronic com p onent of claim 15, wherein with res p ect to the qrap hene hot hole transistor an interface dipole moment is present either at the interface between the base layer and the collector barrier layer or at an interface between the emitter layer and the emitter barrier layer or at both of these interfaces, and wherein the interface dipole moment modifies an energy position of the valence band maximum in the respective barrier layer, which is formed by either the collector barrier layer or the emitter barrier layer, with respect to the Fermi level of the unbiased graphene hot hole transistor.

The grpene hot hera oE cm l electronic com p onent of claim 15, wherein the emitter barrier layer of the qrap hene hot hole transistor has a thickness of between 1 monoatomic layer and nanometer,

The grpene hot hole tri of claim l electronic com p onent of claim 15, wherein the dielectric layer of the collector barrier layer of the qrap hene hot hole transistor is made of Si O 2, BN, molybdenum disulfide, a chalcogenide, T iC₂ HfO 2,intrinsic InN or intrinsic Si or is a layer structure comprising at least two layers made of different ones of these materials.

The graphene hot hole tno of claim l electronic com p onent of claim 15, wherein the emitter of the qrap hene hot hole transistor is made of p-doped hexagonal boron nitride (h-BN), the emitter barrier layer is made of undoped hBN, the collector barrier layer is made of undoped BN, and the collector is a metal.

The grh hot holo trAt of claim l electronic com p onent of claim 15, wherein the qrap hene hot hole transistor further eemprIsn gcom p rises a metallic back gate layer separated from the emitter by a back- gate insulator layer, and a bias contact for applying a DC bias to a capacitor formed by the emitter, the back-gate insulator layer and the back-gate layer.

The gr aphene hot hera of cm l electronic com p onent of claim 15, wherein a layer sub-stack of the layer stack of the qrap hene hot hole transistor, the layer sub-stack being formed by the emitter layer and the emitter barrier layer, is formed by a p ++ -Si(001)/i-Si(001) layer substack, a p ++ -Ge(001)/i- Ge(001) layer sub-stack, or a p ++ -GaAs(001)/i-GaAs(001) layer stack.

An electronic component comprising a graphene hot hole transistor a ccording to c laim l com p risin q:-a layer stack includin g an emitter layer, a collector layer, and a base layer that com p rises a qrap hene la y er, wherein 4 Application Serial No.: 13/721,360 Attorney Docket No. 536-009.058-the la v er stack further com p rises an emitter barrier la v er that is arranged between the base layer and the emitter layer, and a collector barrier layer that is arran g ed between the base and the collector layers and ad j acent to the grap hene layer;-either the emitter and collector la y ers are made of a material havin g p -ty pe conductivity, or the emitter layer is made of a material havin g p -ty p e conductivity and the collector layer is made of a material havin g the electrical conductivity of a metal; and wherein-the layer stack is confi g ured to allow a current of holes throu g h the layer stack in a stackin g direction p ointin g from the emitter layer throu g h the base layer to the collector la v er, under a pp lication of an in p ut volta g e that sets a base p otential at the base layer below an emitter p otential at the emitter layer and that sets a collector p otential at the collector layer below the base p otential, wherein an amount of said current of holes is controllable by an amount of a p otential difference between the base p otential and the emitter p otential.

A complementary electronic circuit comprising a graphene hot hole transistor according t-claim-1-comp risin q:-a layer stack includin g an emitter layer, a collector layer, and a base layer that com p rises a grap hene layer, wherein-the layer stack further com p rises an emitter barrier layer that is arran ged between the base la v er and the emitter la v er, and a collector barrier la v er that is arran g ed between the base and the collector layers and ad j acent to the grap hene layer; 5 Application Serial No.: 13/721,360 Attorney Docket No. 536-009.058-either the emitter and collector la y ers are made of a material havin g p -ty pe conductivity, or the emitter layer is made of a material havin g p -ty p e conductivity and the collector layer is made of a material havin g the electrical conductivity of a metal; and wherein-the layer stack is confi g ured to allow a current of holes throu g h the layer stack in a stackin g direction p ointin g from the emitter layer throu g h the base layer to the collector la v er, under a pp lication of an in p ut volta g e that sets a base p otential at the base layer below an emitter p otential at the emitter layer and that sets a collector p otential at the collector layer below the base p otential, wherein an amount of said current of holes is controllable by an amount of a p otential difference between the base p otential and the emitter p otential. and -_ a graphene hot electron transistor.

canceled

The graphene hot hole tra tor of claim l electronic com p onent of claim 15, wherein either the emitter layer or both the collector and emitter layers of the qrap hene hot hole transistor are made of p-doped silicon.

The graphene hot hole tra tor of claim l electronic com p onent of claim 15, wherein the collector barrier layer of the qrap hene hot hole transistor comprises a dielectric layer at an interface between the base layer and the collector

The grh hot holo trancistor of claim l electronic com p onent of claim 15, wherein with res p ect to the qrap hene hot hole transistor an interface dipole moment is present either at the interface between the base layer and the collector barrier layer or at an interface between the emitter layer and the emitter barrier layer or at both of these interfaces, and wherein the interface dipole moment modifies an energy position of the valence band maximum in the respective barrier layer, which is formed by either the collector barrier layer or the emitter barrier layer, with respect to the Fermi level of the unbiased graphene hot hole transistor.

The grpene hot hera oE cm l electronic com p onent of claim 15, wherein the emitter barrier layer of the qrap hene hot hole transistor has a thickness of between 1 monoatomic layer and nanometer,

The grpene hot hole tri of claim l electronic com p onent of claim 15, wherein the dielectric layer of the collector barrier layer of the qrap hene hot hole transistor is made of Si O 2, BN, molybdenum disulfide, a chalcogenide, T iC₂ HfO 2,intrinsic InN or intrinsic Si or is a layer structure comprising at least two layers made of different ones of these materials.

The graphene hot hole tno of claim l electronic com p onent of claim 15, wherein the emitter of the qrap hene hot hole transistor is made of p-doped hexagonal boron nitride (h-BN), the emitter barrier layer is made of undoped hBN, the collector barrier layer is made of undoped BN, and the collector is a metal.

The grh hot holo trAt of claim l electronic com p onent of claim 15, wherein the qrap hene hot hole transistor further eemprIsn gcom p rises a metallic back gate layer separated from the emitter by a back- gate insulator layer, and a bias contact for applying a DC bias to a capacitor formed by the emitter, the back-gate insulator layer and the back-gate layer.

The gr aphene hot hera of cm l electronic com p onent of claim 15, wherein a layer sub-stack of the layer stack of the qrap hene hot hole transistor, the layer sub-stack being formed by the emitter layer and the emitter barrier layer, is formed by a p ++ -Si(001)/i-Si(001) layer substack, a p ++ -Ge(001)/i- Ge(001) layer sub-stack, or a p ++ -GaAs(001)/i-GaAs(001) layer stack.

An electronic component comprising a graphene hot hole transistor a ccording to c laim l com p risin q:-a layer stack includin g an emitter layer, a collector layer, and a base layer that com p rises a qrap hene la y er, wherein 4 Application Serial No.: 13/721,360 Attorney Docket No. 536-009.058-the la v er stack further com p rises an emitter barrier la v er that is arranged between the base layer and the emitter layer, and a collector barrier layer that is arran g ed between the base and the collector layers and ad j acent to the grap hene layer;-either the emitter and collector la y ers are made of a material havin g p -ty pe conductivity, or the emitter layer is made of a material havin g p -ty p e conductivity and the collector layer is made of a material havin g the electrical conductivity of a metal; and wherein-the layer stack is confi g ured to allow a current of holes throu g h the layer stack in a stackin g direction p ointin g from the emitter layer throu g h the base layer to the collector la v er, under a pp lication of an in p ut volta g e that sets a base p otential at the base layer below an emitter p otential at the emitter layer and that sets a collector p otential at the collector layer below the base p otential, wherein an amount of said current of holes is controllable by an amount of a p otential difference between the base p otential and the emitter p otential.

A complementary electronic circuit comprising a graphene hot hole transistor according t-claim-1-comp risin q:-a layer stack includin g an emitter layer, a collector layer, and a base layer that com p rises a grap hene layer, wherein-the layer stack further com p rises an emitter barrier layer that is arran ged between the base la v er and the emitter la v er, and a collector barrier la v er that is arran g ed between the base and the collector layers and ad j acent to the grap hene layer; 5 Application Serial No.: 13/721,360 Attorney Docket No. 536-009.058-either the emitter and collector la y ers are made of a material havin g p -ty pe conductivity, or the emitter layer is made of a material havin g p -ty p e conductivity and the collector layer is made of a material havin g the electrical conductivity of a metal; and wherein-the layer stack is confi g ured to allow a current of holes throu g h the layer stack in a stackin g direction p ointin g from the emitter layer throu g h the base layer to the collector la v er, under a pp lication of an in p ut volta g e that sets a base p otential at the base layer below an emitter p otential at the emitter layer and that sets a collector p otential at the collector layer below the base p otential, wherein an amount of said current of holes is controllable by an amount of a p otential difference between the base p otential and the emitter p otential. and -_ a graphene hot electron transistor.