Patent
US 9,688,540Segmented Graphene Growth on Surfaces of a Patterned substrate Layer and Devices Thereof
Mark Alan Davis
SOLAN, LLC·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,688,540Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A and fabricated by an exemplary method in accordance with an embodiment of the present disclosure. [0026] Figure 2A illustrates a top view of an …
FIG. 2A and fabricated by an exemplary method in accordance with an embodiment of the present disclosure. [0028] Figures 3A-3C illustrate top views of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a graphite-based structure on a substrate comprising: (A) patterning the substrate thereby forming a plurality of elements on the substrate, each respective element in the plurality of elements separated from an adjacent element on the substrate by a corresponding trench in a plurality of trenches on the substrate, wherein (i) each respective element in the plurality of elements has a corresponding top surface, (ii) each respective trench in the plurality of trenches is characterized by a trench surface, (111) each respective trench in the plurality of trenches separates a pair of adjacent elements in the plurality of elements, (iv) each top surface of each respective element in the plurality of elements is separated from an adjacent trench surface by a side wall of the respective element, (v) a top surface of a first element in the plurality of elements is characterized by a first elevation, (vi) a trench surface of a first trench in the plurality of trenches, the first trench separating the first element from another element in the plurality of elements, is characterized by a second elevation, (vii) the first elevation is other than the second elevation, and (viii) a first orthogonal projection of the top surface of the first element and a second orthogonal projection of the trench surface of the first trench onto a common plane are contiguous or overlapping; and (B) segmentedly depositing a graphene initiating layer onto the top surface of each respective element in the plurality of elements at an energy level that restricts deposition of the graphene initiating la y er to the top surface of each respective element; and (C) generating graphene using the graphene initiating layer thereby forming the graphite- based structure. DB₂/30548674.1 Page 2 of 7 Application No. 14/761,290 Amendment dated: A u gust 26, 2016
The method of claim 1, wherein the plurality of trenches is formed by removing portions of substrate material from predefined regions of the substrate.
The method of claim 1, wherein: the substrate includes a plurality of layers, wherein the plurality of layers includes at least one respective substrate layer and wherein the substrate comprises a plurality of materials, including a respective material of the respective substrate layer; and the plurality of trenches is formed by removing portions of the respective material from predefined regions of the respective substrate layer.
The method of claim 1, wherein the plurality of elements is formed by growing portions of substrate material selectively at regions of the substrate corresponding to the plurality of elements.
The method of claim 1, wherein the substrate comprises a first material and wherein the plurality of elements is formed by growing at least one respective secondary material, distinct from the first material, selectively on regions of the substrate corresponding to the plurality of elements. DB₂/30548674.1 Page 3 of 7 Application No. 14/761,290 Amendment dated: A u gust 26, 2016
21- 116. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphite-based structure on patterned substrate
integrated graphite-based structure with alternating secondary material and graphene layers
Materials described outside the worked examples.
graphene initiating layer
graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–120 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,688,540Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A and fabricated by an exemplary method in accordance with an embodiment of the present disclosure. [0026] Figure 2A illustrates a top view of an …
FIG. 2A and fabricated by an exemplary method in accordance with an embodiment of the present disclosure. [0028] Figures 3A-3C illustrate top views of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a graphite-based structure on a substrate comprising: (A) patterning the substrate thereby forming a plurality of elements on the substrate, each respective element in the plurality of elements separated from an adjacent element on the substrate by a corresponding trench in a plurality of trenches on the substrate, wherein (i) each respective element in the plurality of elements has a corresponding top surface, (ii) each respective trench in the plurality of trenches is characterized by a trench surface, (111) each respective trench in the plurality of trenches separates a pair of adjacent elements in the plurality of elements, (iv) each top surface of each respective element in the plurality of elements is separated from an adjacent trench surface by a side wall of the respective element, (v) a top surface of a first element in the plurality of elements is characterized by a first elevation, (vi) a trench surface of a first trench in the plurality of trenches, the first trench separating the first element from another element in the plurality of elements, is characterized by a second elevation, (vii) the first elevation is other than the second elevation, and (viii) a first orthogonal projection of the top surface of the first element and a second orthogonal projection of the trench surface of the first trench onto a common plane are contiguous or overlapping; and (B) segmentedly depositing a graphene initiating layer onto the top surface of each respective element in the plurality of elements at an energy level that restricts deposition of the graphene initiating la y er to the top surface of each respective element; and (C) generating graphene using the graphene initiating layer thereby forming the graphite- based structure. DB₂/30548674.1 Page 2 of 7 Application No. 14/761,290 Amendment dated: A u gust 26, 2016
The method of claim 1, wherein the plurality of trenches is formed by removing portions of substrate material from predefined regions of the substrate.
The method of claim 1, wherein: the substrate includes a plurality of layers, wherein the plurality of layers includes at least one respective substrate layer and wherein the substrate comprises a plurality of materials, including a respective material of the respective substrate layer; and the plurality of trenches is formed by removing portions of the respective material from predefined regions of the respective substrate layer.
The method of claim 1, wherein the plurality of elements is formed by growing portions of substrate material selectively at regions of the substrate corresponding to the plurality of elements.
The method of claim 1, wherein the substrate comprises a first material and wherein the plurality of elements is formed by growing at least one respective secondary material, distinct from the first material, selectively on regions of the substrate corresponding to the plurality of elements. DB₂/30548674.1 Page 3 of 7 Application No. 14/761,290 Amendment dated: A u gust 26, 2016
21- 116. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphite-based structure on patterned substrate
integrated graphite-based structure with alternating secondary material and graphene layers
Materials described outside the worked examples.
graphene initiating layer
graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–120 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,688,540Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A and fabricated by an exemplary method in accordance with an embodiment of the present disclosure. [0026] Figure 2A illustrates a top view of an …
FIG. 2A and fabricated by an exemplary method in accordance with an embodiment of the present disclosure. [0028] Figures 3A-3C illustrate top views of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a graphite-based structure on a substrate comprising: (A) patterning the substrate thereby forming a plurality of elements on the substrate, each respective element in the plurality of elements separated from an adjacent element on the substrate by a corresponding trench in a plurality of trenches on the substrate, wherein (i) each respective element in the plurality of elements has a corresponding top surface, (ii) each respective trench in the plurality of trenches is characterized by a trench surface, (111) each respective trench in the plurality of trenches separates a pair of adjacent elements in the plurality of elements, (iv) each top surface of each respective element in the plurality of elements is separated from an adjacent trench surface by a side wall of the respective element, (v) a top surface of a first element in the plurality of elements is characterized by a first elevation, (vi) a trench surface of a first trench in the plurality of trenches, the first trench separating the first element from another element in the plurality of elements, is characterized by a second elevation, (vii) the first elevation is other than the second elevation, and (viii) a first orthogonal projection of the top surface of the first element and a second orthogonal projection of the trench surface of the first trench onto a common plane are contiguous or overlapping; and (B) segmentedly depositing a graphene initiating layer onto the top surface of each respective element in the plurality of elements at an energy level that restricts deposition of the graphene initiating la y er to the top surface of each respective element; and (C) generating graphene using the graphene initiating layer thereby forming the graphite- based structure. DB₂/30548674.1 Page 2 of 7 Application No. 14/761,290 Amendment dated: A u gust 26, 2016
The method of claim 1, wherein the plurality of trenches is formed by removing portions of substrate material from predefined regions of the substrate.
The method of claim 1, wherein: the substrate includes a plurality of layers, wherein the plurality of layers includes at least one respective substrate layer and wherein the substrate comprises a plurality of materials, including a respective material of the respective substrate layer; and the plurality of trenches is formed by removing portions of the respective material from predefined regions of the respective substrate layer.
The method of claim 1, wherein the plurality of elements is formed by growing portions of substrate material selectively at regions of the substrate corresponding to the plurality of elements.
The method of claim 1, wherein the substrate comprises a first material and wherein the plurality of elements is formed by growing at least one respective secondary material, distinct from the first material, selectively on regions of the substrate corresponding to the plurality of elements. DB₂/30548674.1 Page 3 of 7 Application No. 14/761,290 Amendment dated: A u gust 26, 2016
21- 116. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphite-based structure on patterned substrate
integrated graphite-based structure with alternating secondary material and graphene layers
Materials described outside the worked examples.
graphene initiating layer
graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–120 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,688,540Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A and fabricated by an exemplary method in accordance with an embodiment of the present disclosure. [0026] Figure 2A illustrates a top view of an …
FIG. 2A and fabricated by an exemplary method in accordance with an embodiment of the present disclosure. [0028] Figures 3A-3C illustrate top views of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a graphite-based structure on a substrate comprising: (A) patterning the substrate thereby forming a plurality of elements on the substrate, each respective element in the plurality of elements separated from an adjacent element on the substrate by a corresponding trench in a plurality of trenches on the substrate, wherein (i) each respective element in the plurality of elements has a corresponding top surface, (ii) each respective trench in the plurality of trenches is characterized by a trench surface, (111) each respective trench in the plurality of trenches separates a pair of adjacent elements in the plurality of elements, (iv) each top surface of each respective element in the plurality of elements is separated from an adjacent trench surface by a side wall of the respective element, (v) a top surface of a first element in the plurality of elements is characterized by a first elevation, (vi) a trench surface of a first trench in the plurality of trenches, the first trench separating the first element from another element in the plurality of elements, is characterized by a second elevation, (vii) the first elevation is other than the second elevation, and (viii) a first orthogonal projection of the top surface of the first element and a second orthogonal projection of the trench surface of the first trench onto a common plane are contiguous or overlapping; and (B) segmentedly depositing a graphene initiating layer onto the top surface of each respective element in the plurality of elements at an energy level that restricts deposition of the graphene initiating la y er to the top surface of each respective element; and (C) generating graphene using the graphene initiating layer thereby forming the graphite- based structure. DB₂/30548674.1 Page 2 of 7 Application No. 14/761,290 Amendment dated: A u gust 26, 2016
The method of claim 1, wherein the plurality of trenches is formed by removing portions of substrate material from predefined regions of the substrate.
The method of claim 1, wherein: the substrate includes a plurality of layers, wherein the plurality of layers includes at least one respective substrate layer and wherein the substrate comprises a plurality of materials, including a respective material of the respective substrate layer; and the plurality of trenches is formed by removing portions of the respective material from predefined regions of the respective substrate layer.
The method of claim 1, wherein the plurality of elements is formed by growing portions of substrate material selectively at regions of the substrate corresponding to the plurality of elements.
The method of claim 1, wherein the substrate comprises a first material and wherein the plurality of elements is formed by growing at least one respective secondary material, distinct from the first material, selectively on regions of the substrate corresponding to the plurality of elements. DB₂/30548674.1 Page 3 of 7 Application No. 14/761,290 Amendment dated: A u gust 26, 2016
21- 116. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphite-based structure on patterned substrate
integrated graphite-based structure with alternating secondary material and graphene layers
Materials described outside the worked examples.
graphene initiating layer
graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–120 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
photoresist material
dielectric material, metal oxide, metal nitride, semiconductor material, or metal
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
titanium dioxide
TiO₂
titanium nitride
TiN
silicon
Si
gallium arsenide
GaAs
germanium
Ge
group VII-IX metal (copper, nickel, iron, platinum, gold, palladium, ruthenium)
aluminum, titanium, tungsten, cadmium, silver, platinum, tantalum, hafnium, or vanadium
titanium
Ti
tantalum, tantalum oxide, or tantalum nitride
hafnium, hafnium oxide, or hafnium nitride
catalytic metals
silicon carbide
SiC
| — |
Thickness | 5–40 nm | — |
Thickness | 5–30 nm | — |
Thickness | 5–500 nm | — |
Thickness | 3–300 nm | — |
Thickness | 10–100 nm | — |
Thickness | 10–500 nm | — |
Thickness | 1–10 nm | — |
Thickness | 10–20 nm | — |
Thickness | 20–30 nm | — |
Thickness | 30–40 nm | — |
Thickness | 50–100 nm | — |
Thickness | 100–500 nm | — |
Temperature | 200–600 °C | — |
Temperature | 30–200 °C | — |
Thickness | 1–100 nm | — |
Thickness | 10–15 µm | — |
Pressure | 2–5 Torr | — |
Pressure | 0.0001 Torr | — |
Pressure | ≤ 10 Pa | — |
Pressure | ≤ 1 Pa | — |
Thickness | ≥ 0.1 nm | — |
Thickness | ≥ 0.2 nm | — |
Thickness | ≥ 0.3 nm | — |
Thickness | ≥ 0.4 nm | — |
Thickness | ≥ 0.5 nm | — |
Thickness | ≥ 0.6 nm | — |
Thickness | ≥ 0.7 nm | — |
Thickness | ≥ 0.8 nm | — |
Thickness | ≥ 0.9 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 3 nm | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | 10–300 nm | — |
Thickness | 3–10 nm | — |
Thickness | ≤ 5 nm | — |
SINGLE AND FEW-LAYER GRAPHENE BASED PHOTODETECTING DEVICES
photoresist material
dielectric material, metal oxide, metal nitride, semiconductor material, or metal
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
titanium dioxide
TiO₂
titanium nitride
TiN
silicon
Si
gallium arsenide
GaAs
germanium
Ge
group VII-IX metal (copper, nickel, iron, platinum, gold, palladium, ruthenium)
aluminum, titanium, tungsten, cadmium, silver, platinum, tantalum, hafnium, or vanadium
titanium
Ti
tantalum, tantalum oxide, or tantalum nitride
hafnium, hafnium oxide, or hafnium nitride
catalytic metals
silicon carbide
SiC
| — |
Thickness | 5–40 nm | — |
Thickness | 5–30 nm | — |
Thickness | 5–500 nm | — |
Thickness | 3–300 nm | — |
Thickness | 10–100 nm | — |
Thickness | 10–500 nm | — |
Thickness | 1–10 nm | — |
Thickness | 10–20 nm | — |
Thickness | 20–30 nm | — |
Thickness | 30–40 nm | — |
Thickness | 50–100 nm | — |
Thickness | 100–500 nm | — |
Temperature | 200–600 °C | — |
Temperature | 30–200 °C | — |
Thickness | 1–100 nm | — |
Thickness | 10–15 µm | — |
Pressure | 2–5 Torr | — |
Pressure | 0.0001 Torr | — |
Pressure | ≤ 10 Pa | — |
Pressure | ≤ 1 Pa | — |
Thickness | ≥ 0.1 nm | — |
Thickness | ≥ 0.2 nm | — |
Thickness | ≥ 0.3 nm | — |
Thickness | ≥ 0.4 nm | — |
Thickness | ≥ 0.5 nm | — |
Thickness | ≥ 0.6 nm | — |
Thickness | ≥ 0.7 nm | — |
Thickness | ≥ 0.8 nm | — |
Thickness | ≥ 0.9 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 3 nm | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | 10–300 nm | — |
Thickness | 3–10 nm | — |
Thickness | ≤ 5 nm | — |
SINGLE AND FEW-LAYER GRAPHENE BASED PHOTODETECTING DEVICES
photoresist material
dielectric material, metal oxide, metal nitride, semiconductor material, or metal
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
titanium dioxide
TiO₂
titanium nitride
TiN
silicon
Si
gallium arsenide
GaAs
germanium
Ge
group VII-IX metal (copper, nickel, iron, platinum, gold, palladium, ruthenium)
aluminum, titanium, tungsten, cadmium, silver, platinum, tantalum, hafnium, or vanadium
titanium
Ti
tantalum, tantalum oxide, or tantalum nitride
hafnium, hafnium oxide, or hafnium nitride
catalytic metals
silicon carbide
SiC
| — |
Thickness | 5–40 nm | — |
Thickness | 5–30 nm | — |
Thickness | 5–500 nm | — |
Thickness | 3–300 nm | — |
Thickness | 10–100 nm | — |
Thickness | 10–500 nm | — |
Thickness | 1–10 nm | — |
Thickness | 10–20 nm | — |
Thickness | 20–30 nm | — |
Thickness | 30–40 nm | — |
Thickness | 50–100 nm | — |
Thickness | 100–500 nm | — |
Temperature | 200–600 °C | — |
Temperature | 30–200 °C | — |
Thickness | 1–100 nm | — |
Thickness | 10–15 µm | — |
Pressure | 2–5 Torr | — |
Pressure | 0.0001 Torr | — |
Pressure | ≤ 10 Pa | — |
Pressure | ≤ 1 Pa | — |
Thickness | ≥ 0.1 nm | — |
Thickness | ≥ 0.2 nm | — |
Thickness | ≥ 0.3 nm | — |
Thickness | ≥ 0.4 nm | — |
Thickness | ≥ 0.5 nm | — |
Thickness | ≥ 0.6 nm | — |
Thickness | ≥ 0.7 nm | — |
Thickness | ≥ 0.8 nm | — |
Thickness | ≥ 0.9 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 3 nm | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | 10–300 nm | — |
Thickness | 3–10 nm | — |
Thickness | ≤ 5 nm | — |
SINGLE AND FEW-LAYER GRAPHENE BASED PHOTODETECTING DEVICES
photoresist material
dielectric material, metal oxide, metal nitride, semiconductor material, or metal
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
titanium dioxide
TiO₂
titanium nitride
TiN
silicon
Si
gallium arsenide
GaAs
germanium
Ge
group VII-IX metal (copper, nickel, iron, platinum, gold, palladium, ruthenium)
aluminum, titanium, tungsten, cadmium, silver, platinum, tantalum, hafnium, or vanadium
titanium
Ti
tantalum, tantalum oxide, or tantalum nitride
hafnium, hafnium oxide, or hafnium nitride
catalytic metals
silicon carbide
SiC
| — |
Thickness | 5–40 nm | — |
Thickness | 5–30 nm | — |
Thickness | 5–500 nm | — |
Thickness | 3–300 nm | — |
Thickness | 10–100 nm | — |
Thickness | 10–500 nm | — |
Thickness | 1–10 nm | — |
Thickness | 10–20 nm | — |
Thickness | 20–30 nm | — |
Thickness | 30–40 nm | — |
Thickness | 50–100 nm | — |
Thickness | 100–500 nm | — |
Temperature | 200–600 °C | — |
Temperature | 30–200 °C | — |
Thickness | 1–100 nm | — |
Thickness | 10–15 µm | — |
Pressure | 2–5 Torr | — |
Pressure | 0.0001 Torr | — |
Pressure | ≤ 10 Pa | — |
Pressure | ≤ 1 Pa | — |
Thickness | ≥ 0.1 nm | — |
Thickness | ≥ 0.2 nm | — |
Thickness | ≥ 0.3 nm | — |
Thickness | ≥ 0.4 nm | — |
Thickness | ≥ 0.5 nm | — |
Thickness | ≥ 0.6 nm | — |
Thickness | ≥ 0.7 nm | — |
Thickness | ≥ 0.8 nm | — |
Thickness | ≥ 0.9 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 3 nm | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | 10–300 nm | — |
Thickness | 3–10 nm | — |
Thickness | ≤ 5 nm | — |
SINGLE AND FEW-LAYER GRAPHENE BASED PHOTODETECTING DEVICES