Patent
US 10,395,928Title: DEPOSITING A PASSIVATION LAYER ON A GRAPHENE SHEET
DENG PAN, BRETT GOLDSMITH, MITCHELL LERNER
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,395,928Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates the different progressions of depositing a passivation layer onto a wafer for creating graphene wells according to one embodiment.
Figure 1 A illustrates a graphene sheet with a metal coating according to one embodiment.
Figure 1 B illustrates a passivation layer deposited onto a wafer with a graphene sheet according to one embodiment.
Figure 1 C illustrates a photoresist layer applied onto the surface of the passivation layer according to one embodiment.
Figure 1 D illustrates patterning the photoresist layer according to one embodiment.
Figure 1 E illustrates patterning the passivation layer in accordance to the exposed areas according to one embodiment.
Figure 1 F illustrates the removal of the photoresist layer according to one embodiment.
Figure 2 illustrates a graphene sheet with a two different metal coatings on top according to one embodiment.
Figure 3 is a flow chart illustrating a method for depositing a passivation layer onto a wafer according to one embodiment. [0016] The figures are not intended to be exhaustive or to limit the invention to the precise form disclosed. It should be understood that the invention can be practiced with …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a graphene well comprising: placing a graphene sheet on a substrate; depositing a gold layer on top of the graphene sheet by dipping the graphene sheet in a gold plating solution; depositing a passivation layer on top of the gold layer; and depositing a photoresist layer on top of the passivation layer; wherein the depositing the passivation layer comprises a deposition process utilizin g temperatures ran ging from 100 ° C to 200 °C. Currently amended
The method of claim 1, further comprising depositing a second metal layer between the gold layer and the passivation layer. Previously presented
The method of claim 1, wherein the passivation layer comprises a dielectric layer. Original
The method of claim 1, further comprising etching the photoresist layer to expose a surface of the passivation layer. Original
The method of claim 1, further comprising removing the passivation layer by a dry etching technique Original
The method of claim 1, wherein depositing the passivation layer comprises applying a plasma enhanced chemical vapor deposition process. Original
The method of claim 1, wherein the passivation layer comprises a dielectric layer. Original
Canceled
Canceled
Canceled
A method for producing a graphene well comprising: placing a graphene sheet on a substrate; depositing a first metal layer comprising gold on top of the graphene sheet by dipping the graphene sheet in a gold plating solution; depositing a passivation layer on top of the first metal layer; depositing a photoresist layer on top of the passivation layer; and etching a pattern on the photoresist layer to expose a surface of the passivation layer; wherein the depositing the passivation layer comprises a deposition process utilizin g temperatures ran ging from 100 °C to 200 C. Currently amended
The method of claim 13, further comprising depositing a second metal layer between the first metal layer and the passivation layer. Original
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene well/graphene biosensor
Materials described outside the worked examples.
graphene sheet
gold layer
Au
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,395,928Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates the different progressions of depositing a passivation layer onto a wafer for creating graphene wells according to one embodiment.
Figure 1 A illustrates a graphene sheet with a metal coating according to one embodiment.
Figure 1 B illustrates a passivation layer deposited onto a wafer with a graphene sheet according to one embodiment.
Figure 1 C illustrates a photoresist layer applied onto the surface of the passivation layer according to one embodiment.
Figure 1 D illustrates patterning the photoresist layer according to one embodiment.
Figure 1 E illustrates patterning the passivation layer in accordance to the exposed areas according to one embodiment.
Figure 1 F illustrates the removal of the photoresist layer according to one embodiment.
Figure 2 illustrates a graphene sheet with a two different metal coatings on top according to one embodiment.
Figure 3 is a flow chart illustrating a method for depositing a passivation layer onto a wafer according to one embodiment. [0016] The figures are not intended to be exhaustive or to limit the invention to the precise form disclosed. It should be understood that the invention can be practiced with …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a graphene well comprising: placing a graphene sheet on a substrate; depositing a gold layer on top of the graphene sheet by dipping the graphene sheet in a gold plating solution; depositing a passivation layer on top of the gold layer; and depositing a photoresist layer on top of the passivation layer; wherein the depositing the passivation layer comprises a deposition process utilizin g temperatures ran ging from 100 ° C to 200 °C. Currently amended
The method of claim 1, further comprising depositing a second metal layer between the gold layer and the passivation layer. Previously presented
The method of claim 1, wherein the passivation layer comprises a dielectric layer. Original
The method of claim 1, further comprising etching the photoresist layer to expose a surface of the passivation layer. Original
The method of claim 1, further comprising removing the passivation layer by a dry etching technique Original
The method of claim 1, wherein depositing the passivation layer comprises applying a plasma enhanced chemical vapor deposition process. Original
The method of claim 1, wherein the passivation layer comprises a dielectric layer. Original
Canceled
Canceled
Canceled
A method for producing a graphene well comprising: placing a graphene sheet on a substrate; depositing a first metal layer comprising gold on top of the graphene sheet by dipping the graphene sheet in a gold plating solution; depositing a passivation layer on top of the first metal layer; depositing a photoresist layer on top of the passivation layer; and etching a pattern on the photoresist layer to expose a surface of the passivation layer; wherein the depositing the passivation layer comprises a deposition process utilizin g temperatures ran ging from 100 °C to 200 C. Currently amended
The method of claim 13, further comprising depositing a second metal layer between the first metal layer and the passivation layer. Original
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene well/graphene biosensor
Materials described outside the worked examples.
graphene sheet
gold layer
Au
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,395,928Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates the different progressions of depositing a passivation layer onto a wafer for creating graphene wells according to one embodiment.
Figure 1 A illustrates a graphene sheet with a metal coating according to one embodiment.
Figure 1 B illustrates a passivation layer deposited onto a wafer with a graphene sheet according to one embodiment.
Figure 1 C illustrates a photoresist layer applied onto the surface of the passivation layer according to one embodiment.
Figure 1 D illustrates patterning the photoresist layer according to one embodiment.
Figure 1 E illustrates patterning the passivation layer in accordance to the exposed areas according to one embodiment.
Figure 1 F illustrates the removal of the photoresist layer according to one embodiment.
Figure 2 illustrates a graphene sheet with a two different metal coatings on top according to one embodiment.
Figure 3 is a flow chart illustrating a method for depositing a passivation layer onto a wafer according to one embodiment. [0016] The figures are not intended to be exhaustive or to limit the invention to the precise form disclosed. It should be understood that the invention can be practiced with …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a graphene well comprising: placing a graphene sheet on a substrate; depositing a gold layer on top of the graphene sheet by dipping the graphene sheet in a gold plating solution; depositing a passivation layer on top of the gold layer; and depositing a photoresist layer on top of the passivation layer; wherein the depositing the passivation layer comprises a deposition process utilizin g temperatures ran ging from 100 ° C to 200 °C. Currently amended
The method of claim 1, further comprising depositing a second metal layer between the gold layer and the passivation layer. Previously presented
The method of claim 1, wherein the passivation layer comprises a dielectric layer. Original
The method of claim 1, further comprising etching the photoresist layer to expose a surface of the passivation layer. Original
The method of claim 1, further comprising removing the passivation layer by a dry etching technique Original
The method of claim 1, wherein depositing the passivation layer comprises applying a plasma enhanced chemical vapor deposition process. Original
The method of claim 1, wherein the passivation layer comprises a dielectric layer. Original
Canceled
Canceled
Canceled
A method for producing a graphene well comprising: placing a graphene sheet on a substrate; depositing a first metal layer comprising gold on top of the graphene sheet by dipping the graphene sheet in a gold plating solution; depositing a passivation layer on top of the first metal layer; depositing a photoresist layer on top of the passivation layer; and etching a pattern on the photoresist layer to expose a surface of the passivation layer; wherein the depositing the passivation layer comprises a deposition process utilizin g temperatures ran ging from 100 °C to 200 C. Currently amended
The method of claim 13, further comprising depositing a second metal layer between the first metal layer and the passivation layer. Original
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene well/graphene biosensor
Materials described outside the worked examples.
graphene sheet
gold layer
Au
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,395,928Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates the different progressions of depositing a passivation layer onto a wafer for creating graphene wells according to one embodiment.
Figure 1 A illustrates a graphene sheet with a metal coating according to one embodiment.
Figure 1 B illustrates a passivation layer deposited onto a wafer with a graphene sheet according to one embodiment.
Figure 1 C illustrates a photoresist layer applied onto the surface of the passivation layer according to one embodiment.
Figure 1 D illustrates patterning the photoresist layer according to one embodiment.
Figure 1 E illustrates patterning the passivation layer in accordance to the exposed areas according to one embodiment.
Figure 1 F illustrates the removal of the photoresist layer according to one embodiment.
Figure 2 illustrates a graphene sheet with a two different metal coatings on top according to one embodiment.
Figure 3 is a flow chart illustrating a method for depositing a passivation layer onto a wafer according to one embodiment. [0016] The figures are not intended to be exhaustive or to limit the invention to the precise form disclosed. It should be understood that the invention can be practiced with …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a graphene well comprising: placing a graphene sheet on a substrate; depositing a gold layer on top of the graphene sheet by dipping the graphene sheet in a gold plating solution; depositing a passivation layer on top of the gold layer; and depositing a photoresist layer on top of the passivation layer; wherein the depositing the passivation layer comprises a deposition process utilizin g temperatures ran ging from 100 ° C to 200 °C. Currently amended
The method of claim 1, further comprising depositing a second metal layer between the gold layer and the passivation layer. Previously presented
The method of claim 1, wherein the passivation layer comprises a dielectric layer. Original
The method of claim 1, further comprising etching the photoresist layer to expose a surface of the passivation layer. Original
The method of claim 1, further comprising removing the passivation layer by a dry etching technique Original
The method of claim 1, wherein depositing the passivation layer comprises applying a plasma enhanced chemical vapor deposition process. Original
The method of claim 1, wherein the passivation layer comprises a dielectric layer. Original
Canceled
Canceled
Canceled
A method for producing a graphene well comprising: placing a graphene sheet on a substrate; depositing a first metal layer comprising gold on top of the graphene sheet by dipping the graphene sheet in a gold plating solution; depositing a passivation layer on top of the first metal layer; depositing a photoresist layer on top of the passivation layer; and etching a pattern on the photoresist layer to expose a surface of the passivation layer; wherein the depositing the passivation layer comprises a deposition process utilizin g temperatures ran ging from 100 °C to 200 C. Currently amended
The method of claim 13, further comprising depositing a second metal layer between the first metal layer and the passivation layer. Original
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene well/graphene biosensor
Materials described outside the worked examples.
graphene sheet
gold layer
Au
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
passivation layer
photoresist layer
second metal layer
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
silicon oxide
SiOx
amorphous silicon
a-Si
polysilicon
substrate/wafer
platinum
Pt
| 100–1000 nm |
| — |
Duration | 2–10 minutes | — |
Duration | 1–5 minutes | — |
Temperature | 100–200 °C | — |
Force sensing with a graphene nanomechanical resonator coupled to photonic crystal guided resonances
passivation layer
photoresist layer
second metal layer
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
silicon oxide
SiOx
amorphous silicon
a-Si
polysilicon
substrate/wafer
platinum
Pt
| 100–1000 nm |
| — |
Duration | 2–10 minutes | — |
Duration | 1–5 minutes | — |
Temperature | 100–200 °C | — |
Force sensing with a graphene nanomechanical resonator coupled to photonic crystal guided resonances
passivation layer
photoresist layer
second metal layer
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
silicon oxide
SiOx
amorphous silicon
a-Si
polysilicon
substrate/wafer
platinum
Pt
| 100–1000 nm |
| — |
Duration | 2–10 minutes | — |
Duration | 1–5 minutes | — |
Temperature | 100–200 °C | — |
Force sensing with a graphene nanomechanical resonator coupled to photonic crystal guided resonances
passivation layer
photoresist layer
second metal layer
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
silicon oxide
SiOx
amorphous silicon
a-Si
polysilicon
substrate/wafer
platinum
Pt
| 100–1000 nm |
| — |
Duration | 2–10 minutes | — |
Duration | 1–5 minutes | — |
Temperature | 100–200 °C | — |
Force sensing with a graphene nanomechanical resonator coupled to photonic crystal guided resonances