Abstract

We present the design, simulation and optimization of a graphene-on-silicon nitride integrated waveguide dual-mode electro-absorption modulator operating at 1550 nm. The work designs passive TE₀ and TE₁ graphene-on-silicon nitride mode filters and then combines them with transparent hydrogen-doped indium oxide electrodes to form a dual-mode modulator. Using a graphene conductivity model and a finite-element waveguide model, the paper optimizes device geometry and reports modulation depths, extinction ratios, insertion losses, bandwidth, energy consumption, and fabrication tolerances.

Abstract

We present the design, simulation and optimization of a graphene-on-silicon nitride integrated waveguide dual-mode electro-absorption modulator operating at 1550 nm. The work designs passive TE₀ and TE₁ graphene-on-silicon nitride mode filters and then combines them with transparent hydrogen-doped indium oxide electrodes to form a dual-mode modulator. Using a graphene conductivity model and a finite-element waveguide model, the paper optimizes device geometry and reports modulation depths, extinction ratios, insertion losses, bandwidth, energy consumption, and fabrication tolerances.

Abstract

We present the design, simulation and optimization of a graphene-on-silicon nitride integrated waveguide dual-mode electro-absorption modulator operating at 1550 nm. The work designs passive TE₀ and TE₁ graphene-on-silicon nitride mode filters and then combines them with transparent hydrogen-doped indium oxide electrodes to form a dual-mode modulator. Using a graphene conductivity model and a finite-element waveguide model, the paper optimizes device geometry and reports modulation depths, extinction ratios, insertion losses, bandwidth, energy consumption, and fabrication tolerances.

Abstract

We present the design, simulation and optimization of a graphene-on-silicon nitride integrated waveguide dual-mode electro-absorption modulator operating at 1550 nm. The work designs passive TE₀ and TE₁ graphene-on-silicon nitride mode filters and then combines them with transparent hydrogen-doped indium oxide electrodes to form a dual-mode modulator. Using a graphene conductivity model and a finite-element waveguide model, the paper optimizes device geometry and reports modulation depths, extinction ratios, insertion losses, bandwidth, energy consumption, and fabrication tolerances.