Patent
US 9,016,108GRAPHENE BASED REVERSIBLE NANO-SWITCH/SENSOR SCHOTTKY DIODE
Felix A. Miranda
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,016,108Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an example system incorporating a dual function nanostructure device in accordance with the innovation. [0015]
FIG. 2 illustrates an example fabrication process of the dual function nanostructure device in accordance with the innovation. [0016]
FIG. 3B illustrates an example schematic of a pre-patte rn ed doped substrate in accordance with aspects of the innovation. [0018]
FIG. 4 illustrates an example microscopic image of a graphene film crossing a wafer edge in accordance with the innovation. [0019]
FIG. 5 illustrates an example micrograph illustrating contact of graphene with an electrode in accordance with aspects of the innovation. [0020]
FIG. 6 illustrates an example experimental response of the dual function nanostructure device in accordance with the innovation. [0021]
FIG. 7 illustrates an example experimental response of the dual function nanostructure device in accordance with the innovation. [0022]
FIG. 8 illustrates an example I -V (Current-Voltage) characteristic of the dual function nanostructure device with the introduction of the volatile species in …
FIG. 9 illustrates an example I -V characteristic of the dual function nanostructure device with the removal of the volatile species in accordance with the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
IN THE CLAIMS 1. A nanostructure device comprising: a doped semiconducting substrate; an insulating layer disposed on the doped semiconducting substrate; an electrode formed on the insulating layer; and at least one layer of graphene formed on the electrode and providing an electrical connection between the electrode and the substrate, wherein the nanostructure device is adapted to perform dual functions as a nano-switching/sensing device.
The nanostructure device of claim 1, wherein the at least one layer of graphene is formed on a top surface of the electrode and extends over an edge of the electrode and contacts the doped substrate to thereby form a Schottky diode.
The nanostructure device of claim 1, wherein ecktrod formed on t nsatingl r co rises at last two elecrodess wh ere in th e a t leas t one lay er o f graphene is formed on a top surface of the at least two electrodes and a semiconducting region between the at least two electrodes, and wherein a portion of the semiconducting region is etched such that a gaseous species to be sensed has direct physical access to both a top surface and a bottom surface of the at least one layer of graphene.
A method of detecting a volatile gaseous species comprising: providing a graphene-based nano-switching/sensing device where at least one layer of graphene provides an electrical connection between an electrode and a doped substrate where the electrode is disposed on the doped substrate; exposing the nano-switching/sensing device to a volatile gaseous species; adsorbing at least one molecule of the volatile gaseous species in the at least one layer of graphene; altering the operation of the nano-switching/sensing device; detecting the presence of the volatile gaseous species; removing the nano-switching/sensing device from the volatile gaseous species; desorbing the at least one molecule from the at least one layer of graphene; reversing the operation of the nano-switching/sensing device; and detecting the absence of the volatile gaseous species.
The method of claim 16, wherein the doped substrate is a silicon substrate doped with an n-type doping agent and has a silicon resistivity in the range of 1- SVG 13242300.09-30-2014.I₀TFT₅YIPXXIFW1.CLM.5.svg 0.39 1.78 Black and white
The method of claim 16, wherein the doped substrate is a silicon substrate doped with a p-type doping agent and has a silicon resistivity in the range of 1- SVG 13242300.09-30-2014.I₀TFT₅YIPXXIFW1.CLM.6.svg 0.39 1.78 Black and white
The method of claim 16, wherein an insulating layer comprised of silicon dioxide having a thickness of approximately 100-300nm is disposed between the electrode and the doped substrate.
The method of claim 16, wherein the electrode is a gold electrode. 7
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based nano-Switch/Sensor Schottky Diode (nanoSSSD)
graphene-based nano-switching/sensing device with dual-electrode etched configuration
Materials described outside the worked examples.
graphene
silicon dioxide
SiO₂
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0–300 nm | — |
Thickness | 100–300 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,016,108Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an example system incorporating a dual function nanostructure device in accordance with the innovation. [0015]
FIG. 2 illustrates an example fabrication process of the dual function nanostructure device in accordance with the innovation. [0016]
FIG. 3B illustrates an example schematic of a pre-patte rn ed doped substrate in accordance with aspects of the innovation. [0018]
FIG. 4 illustrates an example microscopic image of a graphene film crossing a wafer edge in accordance with the innovation. [0019]
FIG. 5 illustrates an example micrograph illustrating contact of graphene with an electrode in accordance with aspects of the innovation. [0020]
FIG. 6 illustrates an example experimental response of the dual function nanostructure device in accordance with the innovation. [0021]
FIG. 7 illustrates an example experimental response of the dual function nanostructure device in accordance with the innovation. [0022]
FIG. 8 illustrates an example I -V (Current-Voltage) characteristic of the dual function nanostructure device with the introduction of the volatile species in …
FIG. 9 illustrates an example I -V characteristic of the dual function nanostructure device with the removal of the volatile species in accordance with the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
IN THE CLAIMS 1. A nanostructure device comprising: a doped semiconducting substrate; an insulating layer disposed on the doped semiconducting substrate; an electrode formed on the insulating layer; and at least one layer of graphene formed on the electrode and providing an electrical connection between the electrode and the substrate, wherein the nanostructure device is adapted to perform dual functions as a nano-switching/sensing device.
The nanostructure device of claim 1, wherein the at least one layer of graphene is formed on a top surface of the electrode and extends over an edge of the electrode and contacts the doped substrate to thereby form a Schottky diode.
The nanostructure device of claim 1, wherein ecktrod formed on t nsatingl r co rises at last two elecrodess wh ere in th e a t leas t one lay er o f graphene is formed on a top surface of the at least two electrodes and a semiconducting region between the at least two electrodes, and wherein a portion of the semiconducting region is etched such that a gaseous species to be sensed has direct physical access to both a top surface and a bottom surface of the at least one layer of graphene.
A method of detecting a volatile gaseous species comprising: providing a graphene-based nano-switching/sensing device where at least one layer of graphene provides an electrical connection between an electrode and a doped substrate where the electrode is disposed on the doped substrate; exposing the nano-switching/sensing device to a volatile gaseous species; adsorbing at least one molecule of the volatile gaseous species in the at least one layer of graphene; altering the operation of the nano-switching/sensing device; detecting the presence of the volatile gaseous species; removing the nano-switching/sensing device from the volatile gaseous species; desorbing the at least one molecule from the at least one layer of graphene; reversing the operation of the nano-switching/sensing device; and detecting the absence of the volatile gaseous species.
The method of claim 16, wherein the doped substrate is a silicon substrate doped with an n-type doping agent and has a silicon resistivity in the range of 1- SVG 13242300.09-30-2014.I₀TFT₅YIPXXIFW1.CLM.5.svg 0.39 1.78 Black and white
The method of claim 16, wherein the doped substrate is a silicon substrate doped with a p-type doping agent and has a silicon resistivity in the range of 1- SVG 13242300.09-30-2014.I₀TFT₅YIPXXIFW1.CLM.6.svg 0.39 1.78 Black and white
The method of claim 16, wherein an insulating layer comprised of silicon dioxide having a thickness of approximately 100-300nm is disposed between the electrode and the doped substrate.
The method of claim 16, wherein the electrode is a gold electrode. 7
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based nano-Switch/Sensor Schottky Diode (nanoSSSD)
graphene-based nano-switching/sensing device with dual-electrode etched configuration
Materials described outside the worked examples.
graphene
silicon dioxide
SiO₂
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0–300 nm | — |
Thickness | 100–300 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,016,108Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an example system incorporating a dual function nanostructure device in accordance with the innovation. [0015]
FIG. 2 illustrates an example fabrication process of the dual function nanostructure device in accordance with the innovation. [0016]
FIG. 3B illustrates an example schematic of a pre-patte rn ed doped substrate in accordance with aspects of the innovation. [0018]
FIG. 4 illustrates an example microscopic image of a graphene film crossing a wafer edge in accordance with the innovation. [0019]
FIG. 5 illustrates an example micrograph illustrating contact of graphene with an electrode in accordance with aspects of the innovation. [0020]
FIG. 6 illustrates an example experimental response of the dual function nanostructure device in accordance with the innovation. [0021]
FIG. 7 illustrates an example experimental response of the dual function nanostructure device in accordance with the innovation. [0022]
FIG. 8 illustrates an example I -V (Current-Voltage) characteristic of the dual function nanostructure device with the introduction of the volatile species in …
FIG. 9 illustrates an example I -V characteristic of the dual function nanostructure device with the removal of the volatile species in accordance with the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
IN THE CLAIMS 1. A nanostructure device comprising: a doped semiconducting substrate; an insulating layer disposed on the doped semiconducting substrate; an electrode formed on the insulating layer; and at least one layer of graphene formed on the electrode and providing an electrical connection between the electrode and the substrate, wherein the nanostructure device is adapted to perform dual functions as a nano-switching/sensing device.
The nanostructure device of claim 1, wherein the at least one layer of graphene is formed on a top surface of the electrode and extends over an edge of the electrode and contacts the doped substrate to thereby form a Schottky diode.
The nanostructure device of claim 1, wherein ecktrod formed on t nsatingl r co rises at last two elecrodess wh ere in th e a t leas t one lay er o f graphene is formed on a top surface of the at least two electrodes and a semiconducting region between the at least two electrodes, and wherein a portion of the semiconducting region is etched such that a gaseous species to be sensed has direct physical access to both a top surface and a bottom surface of the at least one layer of graphene.
A method of detecting a volatile gaseous species comprising: providing a graphene-based nano-switching/sensing device where at least one layer of graphene provides an electrical connection between an electrode and a doped substrate where the electrode is disposed on the doped substrate; exposing the nano-switching/sensing device to a volatile gaseous species; adsorbing at least one molecule of the volatile gaseous species in the at least one layer of graphene; altering the operation of the nano-switching/sensing device; detecting the presence of the volatile gaseous species; removing the nano-switching/sensing device from the volatile gaseous species; desorbing the at least one molecule from the at least one layer of graphene; reversing the operation of the nano-switching/sensing device; and detecting the absence of the volatile gaseous species.
The method of claim 16, wherein the doped substrate is a silicon substrate doped with an n-type doping agent and has a silicon resistivity in the range of 1- SVG 13242300.09-30-2014.I₀TFT₅YIPXXIFW1.CLM.5.svg 0.39 1.78 Black and white
The method of claim 16, wherein the doped substrate is a silicon substrate doped with a p-type doping agent and has a silicon resistivity in the range of 1- SVG 13242300.09-30-2014.I₀TFT₅YIPXXIFW1.CLM.6.svg 0.39 1.78 Black and white
The method of claim 16, wherein an insulating layer comprised of silicon dioxide having a thickness of approximately 100-300nm is disposed between the electrode and the doped substrate.
The method of claim 16, wherein the electrode is a gold electrode. 7
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based nano-Switch/Sensor Schottky Diode (nanoSSSD)
graphene-based nano-switching/sensing device with dual-electrode etched configuration
Materials described outside the worked examples.
graphene
silicon dioxide
SiO₂
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0–300 nm | — |
Thickness | 100–300 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,016,108Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an example system incorporating a dual function nanostructure device in accordance with the innovation. [0015]
FIG. 2 illustrates an example fabrication process of the dual function nanostructure device in accordance with the innovation. [0016]
FIG. 3B illustrates an example schematic of a pre-patte rn ed doped substrate in accordance with aspects of the innovation. [0018]
FIG. 4 illustrates an example microscopic image of a graphene film crossing a wafer edge in accordance with the innovation. [0019]
FIG. 5 illustrates an example micrograph illustrating contact of graphene with an electrode in accordance with aspects of the innovation. [0020]
FIG. 6 illustrates an example experimental response of the dual function nanostructure device in accordance with the innovation. [0021]
FIG. 7 illustrates an example experimental response of the dual function nanostructure device in accordance with the innovation. [0022]
FIG. 8 illustrates an example I -V (Current-Voltage) characteristic of the dual function nanostructure device with the introduction of the volatile species in …
FIG. 9 illustrates an example I -V characteristic of the dual function nanostructure device with the removal of the volatile species in accordance with the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
IN THE CLAIMS 1. A nanostructure device comprising: a doped semiconducting substrate; an insulating layer disposed on the doped semiconducting substrate; an electrode formed on the insulating layer; and at least one layer of graphene formed on the electrode and providing an electrical connection between the electrode and the substrate, wherein the nanostructure device is adapted to perform dual functions as a nano-switching/sensing device.
The nanostructure device of claim 1, wherein the at least one layer of graphene is formed on a top surface of the electrode and extends over an edge of the electrode and contacts the doped substrate to thereby form a Schottky diode.
The nanostructure device of claim 1, wherein ecktrod formed on t nsatingl r co rises at last two elecrodess wh ere in th e a t leas t one lay er o f graphene is formed on a top surface of the at least two electrodes and a semiconducting region between the at least two electrodes, and wherein a portion of the semiconducting region is etched such that a gaseous species to be sensed has direct physical access to both a top surface and a bottom surface of the at least one layer of graphene.
A method of detecting a volatile gaseous species comprising: providing a graphene-based nano-switching/sensing device where at least one layer of graphene provides an electrical connection between an electrode and a doped substrate where the electrode is disposed on the doped substrate; exposing the nano-switching/sensing device to a volatile gaseous species; adsorbing at least one molecule of the volatile gaseous species in the at least one layer of graphene; altering the operation of the nano-switching/sensing device; detecting the presence of the volatile gaseous species; removing the nano-switching/sensing device from the volatile gaseous species; desorbing the at least one molecule from the at least one layer of graphene; reversing the operation of the nano-switching/sensing device; and detecting the absence of the volatile gaseous species.
The method of claim 16, wherein the doped substrate is a silicon substrate doped with an n-type doping agent and has a silicon resistivity in the range of 1- SVG 13242300.09-30-2014.I₀TFT₅YIPXXIFW1.CLM.5.svg 0.39 1.78 Black and white
The method of claim 16, wherein the doped substrate is a silicon substrate doped with a p-type doping agent and has a silicon resistivity in the range of 1- SVG 13242300.09-30-2014.I₀TFT₅YIPXXIFW1.CLM.6.svg 0.39 1.78 Black and white
The method of claim 16, wherein an insulating layer comprised of silicon dioxide having a thickness of approximately 100-300nm is disposed between the electrode and the doped substrate.
The method of claim 16, wherein the electrode is a gold electrode. 7
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based nano-Switch/Sensor Schottky Diode (nanoSSSD)
graphene-based nano-switching/sensing device with dual-electrode etched configuration
Materials described outside the worked examples.
graphene
silicon dioxide
SiO₂
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0–300 nm | — |
Thickness | 100–300 nm |
Related documents with shared materials, methods, properties, or citations.
n-type doped silicon substrate
p-type doped silicon substrate
gold
Au
graphite
ammonia
NH₃
| — |
n-type doped silicon substrate
p-type doped silicon substrate
gold
Au
graphite
ammonia
NH₃
| — |
n-type doped silicon substrate
p-type doped silicon substrate
gold
Au
graphite
ammonia
NH₃
| — |
n-type doped silicon substrate
p-type doped silicon substrate
gold
Au
graphite
ammonia
NH₃
| — |