Patent
US 9,869,033Production of a GaN Bulk Crystal substrate and a Semiconductor Device Formed Thereon
Seiji Sarayama, Masahiko Shimada, Hisanori Yamane, Hirokazu Iwata
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,869,033Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 2 is a diagram showing the 5 construction of a growth apparatus used in a seventh embodiment of the present invention for growing a GaN b ulk crystal; …
FIG.3 is a diagram showing the construction of a growth apparatus used in a first embodiment of th e present invention for growing a G aN b ulk crystal; 5 F …
FIG.4A. so
FIG.5 indicates that the GaN crystal 102 B thus formed has a defect density of less than 102-103cm 2. Thus, the GaN single crystal 102 B is 20 suitable for use …
FIG.6 is a diagram showing a control of GaN composition in the growth apparatus of F IG.3;
FIG.7 shows the construction of a 20 growth apparatus 200 according to a second embodiment of the present invention, wherein those parts corresponding to the …
FIG. 8, the present embodiment is a modification of the embodiment of F I G.7 and uses the heaters 110 and 111, described with reference to the growth apparatus …
FIG. 9, depletion of Ga in the melt 102A is replenished from the Ga source 104 and a thickness of 300 u m or more is obtained for the GaN bulk crystal 102 B as …
FIG. 10 shows the construction of a 15 growth apparatus 500 according to a fifth embodiment of the present invention, wherein those parts corresponding to the …
FIG. 11 is a diagram showing the-13-construction of a growth apparatus used in a sixth embodiment of the present invention for growing a GaN b ulk crystal;
FIG.12, except that the rod 70 2 driven by the motor 703 a nd pulling up the seed 701 in the upward direction is replaced by a r od 702 ' 10 driven by a motor …
FIG. 13, the seed crystal 702 is formed to have a slab shape with a width w and a 5 thickness d corresponding to the width and thickness of the G aN substrate …
FIG.14 shows the construction of a growing apparatus 8 00 according to an eighth embodiment of the present invention, wherein those parts corresponding to the …
FIG.15A and 15 B are diagrams showing a part of the growth apparatus of
FIG. 16. It should be noted that
FIG. 17 shows the construction of a growing 25 apparatus 900 according to a tenth embodiment of the-30-present invention, wherein those parts corresponding to …
FIG.18 shows the construction of a growing 25 apparatus 1000 according to a ninth embodiment of the-31-present invention wherein those parts corresponding to …
FIG.19 is a diagram showing X-ray diffraction data obtained for a G aN bulk crystal 5 according to an eleventh embodiment of the present invention;
FIG.20 i s a diagram showing the construction of a laser diode having a Ga N bulk crystal substrate according to a twelfth embodiment 10 of the present …
FIG. 21 is a diagram showing the construction of a HEM T having a Ga N bulk crystal substrate according to a thirteenth embodiment of the present invention. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-20. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A method of producing a group III nitride crystal in a reaction vessel pressurized to a higher pressure than that of a surrounding, said method comprising the steps of: forming a mixed melt comprising a group III metal element and an alkali metal element in the reaction vessel; disposing a seed crystal in the reaction vessel; supplying a nitrogen source of nitrogen or a compound containing nitrogen to the reaction vessel, the nitrogen source causing a reaction with the mixed melt and fo nn ing the group III nitride crystal; and growing the group III nitride crystal on an outer side of the seed crystal.
The method of producing a group III nitride crystal as claimed in claim 21, wherein the step of growing causes the group III nitride crystal to grow in an outward direction from a center of said seed crystal to outward of said seed crystal.
The method of producing a group III nitride crystal as claimed in claim 21, wherein the step of growing causes the group III nitride crystal to grow at least in a direction parallel to a vapor-melt interface.
Materials described outside the worked examples.
group III nitride crystal
mixed melt of group III metal element and alkali metal element
nitrogen source
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9, depletion of Ga in the melt 102A is replenished from the Ga source 104 and a thickness of 300 u m or more is obtained for the GaN bulk crystal 102 B as …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
cathode luminescent spectrum strongest peak at band edge | 360 nm | GaN |
Related documents with shared materials, methods, properties, or citations.
Method for Etching a Group III Nitride Semiconductor, Method for Producing a Group III Nitride Semiconductor Crystal, and Method for Producing a GaN Substrate
GAN SUBSTRATE WAFER AND PRODUCTION METHOD FOR SAME
Patent
Atlas literature
Patent
US 9,869,033Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 2 is a diagram showing the 5 construction of a growth apparatus used in a seventh embodiment of the present invention for growing a GaN b ulk crystal; …
FIG.3 is a diagram showing the construction of a growth apparatus used in a first embodiment of th e present invention for growing a G aN b ulk crystal; 5 F …
FIG.4A. so
FIG.5 indicates that the GaN crystal 102 B thus formed has a defect density of less than 102-103cm 2. Thus, the GaN single crystal 102 B is 20 suitable for use …
FIG.6 is a diagram showing a control of GaN composition in the growth apparatus of F IG.3;
FIG.7 shows the construction of a 20 growth apparatus 200 according to a second embodiment of the present invention, wherein those parts corresponding to the …
FIG. 8, the present embodiment is a modification of the embodiment of F I G.7 and uses the heaters 110 and 111, described with reference to the growth apparatus …
FIG. 9, depletion of Ga in the melt 102A is replenished from the Ga source 104 and a thickness of 300 u m or more is obtained for the GaN bulk crystal 102 B as …
FIG. 10 shows the construction of a 15 growth apparatus 500 according to a fifth embodiment of the present invention, wherein those parts corresponding to the …
FIG. 11 is a diagram showing the-13-construction of a growth apparatus used in a sixth embodiment of the present invention for growing a GaN b ulk crystal;
FIG.12, except that the rod 70 2 driven by the motor 703 a nd pulling up the seed 701 in the upward direction is replaced by a r od 702 ' 10 driven by a motor …
FIG. 13, the seed crystal 702 is formed to have a slab shape with a width w and a 5 thickness d corresponding to the width and thickness of the G aN substrate …
FIG.14 shows the construction of a growing apparatus 8 00 according to an eighth embodiment of the present invention, wherein those parts corresponding to the …
FIG.15A and 15 B are diagrams showing a part of the growth apparatus of
FIG. 16. It should be noted that
FIG. 17 shows the construction of a growing 25 apparatus 900 according to a tenth embodiment of the-30-present invention, wherein those parts corresponding to …
FIG.18 shows the construction of a growing 25 apparatus 1000 according to a ninth embodiment of the-31-present invention wherein those parts corresponding to …
FIG.19 is a diagram showing X-ray diffraction data obtained for a G aN bulk crystal 5 according to an eleventh embodiment of the present invention;
FIG.20 i s a diagram showing the construction of a laser diode having a Ga N bulk crystal substrate according to a twelfth embodiment 10 of the present …
FIG. 21 is a diagram showing the construction of a HEM T having a Ga N bulk crystal substrate according to a thirteenth embodiment of the present invention. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-20. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A method of producing a group III nitride crystal in a reaction vessel pressurized to a higher pressure than that of a surrounding, said method comprising the steps of: forming a mixed melt comprising a group III metal element and an alkali metal element in the reaction vessel; disposing a seed crystal in the reaction vessel; supplying a nitrogen source of nitrogen or a compound containing nitrogen to the reaction vessel, the nitrogen source causing a reaction with the mixed melt and fo nn ing the group III nitride crystal; and growing the group III nitride crystal on an outer side of the seed crystal.
The method of producing a group III nitride crystal as claimed in claim 21, wherein the step of growing causes the group III nitride crystal to grow in an outward direction from a center of said seed crystal to outward of said seed crystal.
The method of producing a group III nitride crystal as claimed in claim 21, wherein the step of growing causes the group III nitride crystal to grow at least in a direction parallel to a vapor-melt interface.
Materials described outside the worked examples.
group III nitride crystal
mixed melt of group III metal element and alkali metal element
nitrogen source
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9, depletion of Ga in the melt 102A is replenished from the Ga source 104 and a thickness of 300 u m or more is obtained for the GaN bulk crystal 102 B as …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
cathode luminescent spectrum strongest peak at band edge | 360 nm | GaN |
Related documents with shared materials, methods, properties, or citations.
Method for Etching a Group III Nitride Semiconductor, Method for Producing a Group III Nitride Semiconductor Crystal, and Method for Producing a GaN Substrate
GAN SUBSTRATE WAFER AND PRODUCTION METHOD FOR SAME
Patent
Atlas literature
Patent
US 9,869,033Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 2 is a diagram showing the 5 construction of a growth apparatus used in a seventh embodiment of the present invention for growing a GaN b ulk crystal; …
FIG.3 is a diagram showing the construction of a growth apparatus used in a first embodiment of th e present invention for growing a G aN b ulk crystal; 5 F …
FIG.4A. so
FIG.5 indicates that the GaN crystal 102 B thus formed has a defect density of less than 102-103cm 2. Thus, the GaN single crystal 102 B is 20 suitable for use …
FIG.6 is a diagram showing a control of GaN composition in the growth apparatus of F IG.3;
FIG.7 shows the construction of a 20 growth apparatus 200 according to a second embodiment of the present invention, wherein those parts corresponding to the …
FIG. 8, the present embodiment is a modification of the embodiment of F I G.7 and uses the heaters 110 and 111, described with reference to the growth apparatus …
FIG. 9, depletion of Ga in the melt 102A is replenished from the Ga source 104 and a thickness of 300 u m or more is obtained for the GaN bulk crystal 102 B as …
FIG. 10 shows the construction of a 15 growth apparatus 500 according to a fifth embodiment of the present invention, wherein those parts corresponding to the …
FIG. 11 is a diagram showing the-13-construction of a growth apparatus used in a sixth embodiment of the present invention for growing a GaN b ulk crystal;
FIG.12, except that the rod 70 2 driven by the motor 703 a nd pulling up the seed 701 in the upward direction is replaced by a r od 702 ' 10 driven by a motor …
FIG. 13, the seed crystal 702 is formed to have a slab shape with a width w and a 5 thickness d corresponding to the width and thickness of the G aN substrate …
FIG.14 shows the construction of a growing apparatus 8 00 according to an eighth embodiment of the present invention, wherein those parts corresponding to the …
FIG.15A and 15 B are diagrams showing a part of the growth apparatus of
FIG. 16. It should be noted that
FIG. 17 shows the construction of a growing 25 apparatus 900 according to a tenth embodiment of the-30-present invention, wherein those parts corresponding to …
FIG.18 shows the construction of a growing 25 apparatus 1000 according to a ninth embodiment of the-31-present invention wherein those parts corresponding to …
FIG.19 is a diagram showing X-ray diffraction data obtained for a G aN bulk crystal 5 according to an eleventh embodiment of the present invention;
FIG.20 i s a diagram showing the construction of a laser diode having a Ga N bulk crystal substrate according to a twelfth embodiment 10 of the present …
FIG. 21 is a diagram showing the construction of a HEM T having a Ga N bulk crystal substrate according to a thirteenth embodiment of the present invention. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-20. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A method of producing a group III nitride crystal in a reaction vessel pressurized to a higher pressure than that of a surrounding, said method comprising the steps of: forming a mixed melt comprising a group III metal element and an alkali metal element in the reaction vessel; disposing a seed crystal in the reaction vessel; supplying a nitrogen source of nitrogen or a compound containing nitrogen to the reaction vessel, the nitrogen source causing a reaction with the mixed melt and fo nn ing the group III nitride crystal; and growing the group III nitride crystal on an outer side of the seed crystal.
The method of producing a group III nitride crystal as claimed in claim 21, wherein the step of growing causes the group III nitride crystal to grow in an outward direction from a center of said seed crystal to outward of said seed crystal.
The method of producing a group III nitride crystal as claimed in claim 21, wherein the step of growing causes the group III nitride crystal to grow at least in a direction parallel to a vapor-melt interface.
Materials described outside the worked examples.
group III nitride crystal
mixed melt of group III metal element and alkali metal element
nitrogen source
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9, depletion of Ga in the melt 102A is replenished from the Ga source 104 and a thickness of 300 u m or more is obtained for the GaN bulk crystal 102 B as …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
cathode luminescent spectrum strongest peak at band edge | 360 nm | GaN |
Related documents with shared materials, methods, properties, or citations.
Method for Etching a Group III Nitride Semiconductor, Method for Producing a Group III Nitride Semiconductor Crystal, and Method for Producing a GaN Substrate
GAN SUBSTRATE WAFER AND PRODUCTION METHOD FOR SAME
Patent
Atlas literature
Patent
US 9,869,033Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 2 is a diagram showing the 5 construction of a growth apparatus used in a seventh embodiment of the present invention for growing a GaN b ulk crystal; …
FIG.3 is a diagram showing the construction of a growth apparatus used in a first embodiment of th e present invention for growing a G aN b ulk crystal; 5 F …
FIG.4A. so
FIG.5 indicates that the GaN crystal 102 B thus formed has a defect density of less than 102-103cm 2. Thus, the GaN single crystal 102 B is 20 suitable for use …
FIG.6 is a diagram showing a control of GaN composition in the growth apparatus of F IG.3;
FIG.7 shows the construction of a 20 growth apparatus 200 according to a second embodiment of the present invention, wherein those parts corresponding to the …
FIG. 8, the present embodiment is a modification of the embodiment of F I G.7 and uses the heaters 110 and 111, described with reference to the growth apparatus …
FIG. 9, depletion of Ga in the melt 102A is replenished from the Ga source 104 and a thickness of 300 u m or more is obtained for the GaN bulk crystal 102 B as …
FIG. 10 shows the construction of a 15 growth apparatus 500 according to a fifth embodiment of the present invention, wherein those parts corresponding to the …
FIG. 11 is a diagram showing the-13-construction of a growth apparatus used in a sixth embodiment of the present invention for growing a GaN b ulk crystal;
FIG.12, except that the rod 70 2 driven by the motor 703 a nd pulling up the seed 701 in the upward direction is replaced by a r od 702 ' 10 driven by a motor …
FIG. 13, the seed crystal 702 is formed to have a slab shape with a width w and a 5 thickness d corresponding to the width and thickness of the G aN substrate …
FIG.14 shows the construction of a growing apparatus 8 00 according to an eighth embodiment of the present invention, wherein those parts corresponding to the …
FIG.15A and 15 B are diagrams showing a part of the growth apparatus of
FIG. 16. It should be noted that
FIG. 17 shows the construction of a growing 25 apparatus 900 according to a tenth embodiment of the-30-present invention, wherein those parts corresponding to …
FIG.18 shows the construction of a growing 25 apparatus 1000 according to a ninth embodiment of the-31-present invention wherein those parts corresponding to …
FIG.19 is a diagram showing X-ray diffraction data obtained for a G aN bulk crystal 5 according to an eleventh embodiment of the present invention;
FIG.20 i s a diagram showing the construction of a laser diode having a Ga N bulk crystal substrate according to a twelfth embodiment 10 of the present …
FIG. 21 is a diagram showing the construction of a HEM T having a Ga N bulk crystal substrate according to a thirteenth embodiment of the present invention. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-20. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A method of producing a group III nitride crystal in a reaction vessel pressurized to a higher pressure than that of a surrounding, said method comprising the steps of: forming a mixed melt comprising a group III metal element and an alkali metal element in the reaction vessel; disposing a seed crystal in the reaction vessel; supplying a nitrogen source of nitrogen or a compound containing nitrogen to the reaction vessel, the nitrogen source causing a reaction with the mixed melt and fo nn ing the group III nitride crystal; and growing the group III nitride crystal on an outer side of the seed crystal.
The method of producing a group III nitride crystal as claimed in claim 21, wherein the step of growing causes the group III nitride crystal to grow in an outward direction from a center of said seed crystal to outward of said seed crystal.
The method of producing a group III nitride crystal as claimed in claim 21, wherein the step of growing causes the group III nitride crystal to grow at least in a direction parallel to a vapor-melt interface.
Materials described outside the worked examples.
group III nitride crystal
mixed melt of group III metal element and alkali metal element
nitrogen source
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9, depletion of Ga in the melt 102A is replenished from the Ga source 104 and a thickness of 300 u m or more is obtained for the GaN bulk crystal 102 B as …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
cathode luminescent spectrum strongest peak at band edge | 360 nm | GaN |
Related documents with shared materials, methods, properties, or citations.
Method for Etching a Group III Nitride Semiconductor, Method for Producing a Group III Nitride Semiconductor Crystal, and Method for Producing a GaN Substrate
GAN SUBSTRATE WAFER AND PRODUCTION METHOD FOR SAME
GaN
Ga melt with Na flux
NaN₃ (sodium azide)
NaN₃
FIG. 13, the seed crystal 702 is formed to have a slab shape with a width w and a 5 thickness d corresponding to the width and thickness of the G aN substrate …
GaN
Ga melt with Na flux
NaN₃ (sodium azide)
NaN₃
FIG. 13, the seed crystal 702 is formed to have a slab shape with a width w and a 5 thickness d corresponding to the width and thickness of the G aN substrate …
GaN
Ga melt with Na flux
NaN₃ (sodium azide)
NaN₃
FIG. 13, the seed crystal 702 is formed to have a slab shape with a width w and a 5 thickness d corresponding to the width and thickness of the G aN substrate …
GaN
Ga melt with Na flux
NaN₃ (sodium azide)
NaN₃
FIG. 13, the seed crystal 702 is formed to have a slab shape with a width w and a 5 thickness d corresponding to the width and thickness of the G aN substrate …