ALUMINUM GALLIUM NITRIDE BARRIERS AND SEPARATE CONFINEMENT HETEROSTRUCTURE (SCH) LAYERS FOR SEMIPOLAR PLANE III-NITRIDE SEMICONDUCTOR-BASED LIGHT EMITTING DIODES AND LASER DIODES

You-Da Lin

Patent

Atlas literature

Patent

US 8,761,218

ALUMINUM GALLIUM NITRIDE BARRIERS AND SEPARATE CONFINEMENT HETEROSTRUCTURE (SCH) LAYERS FOR SEMIPOLAR PLANE III-NITRIDE SEMICONDUCTOR-BASED LIGHT EMITTING DIODES AND LASER DIODES

You-Da Lin, Hiroaki Ohta, Shuji Nakamura, Steven P. DenBaars et al.

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1.

FIG. 2

FIG. 2 is a ﬂowchart illustrating a method of fabricating a semipolar plane III- nitride semiconductor-based optoelectronic device. The method comprises the …

FIG. 3

FIG. 3 illustrates that the step may comprise depositing a ﬁrst Aluminum (Al) containing (e.g., A lx Gai x N where 0 < x < 1) quantum well barrier layer 300 …

FIG. 4

FIG. 4(b) illustrate one or more I II -Nitride device layers including an active layer 402, wherein the active layer includes at least ﬁrst and second AlGaN …

FIG. 5

FIG. 5(a) is an image for a laser structure of

FIG. 6

FIG. 6(a)). Higher In composition in the SCH also means higher compressive strain builds up in the whole structure resulting in black line defects formation in …

FIG. 7

FIG. 7(b) are measured for an AlGaN 20 cladding free LD structure grown on a (20-21) plane with a 3 period MQW comprising 3 InGaN quantum wells having a 4.5 nm …

FIG. 8

FIG. 8(b) are measured for the AlGaN cladding free LD structure grown on a (20-21) plane, with a 5 period MQW comprising 5 InGaN quantum wells having a 4.5 nm …

FIG. 9

FIG. 9 shows the digital photographs of the top of Laser A, Laser B and Laser C after LD growth. The electroluminescence (EL) spontaneous emission peak …

FIG. 10

FIG. 10(a) and 10(b), respectively. The present invention notices that non- luminescent triangular areas 1000 can be observed in both the ﬂuorescence and …

FIG. 11

FIG. 11(b), Laser B shows uniform QW emission without non- luminescent regions and the EL spontaneous emission peak wavelength was 527 nm. The striations 1100 …

FIG. 12

FIG.12 shows ﬂuorescence microscope images of (a) the whole epitaxial wafer of Laser A and (b) the whole epitaxial wafer of Laser B, wherein photoluminescence …

FIG. 13

FIG. 13, for example. By using AlGaN barriers, the present invention may increase In composition in 30 guiding layers that can enhance optical conﬁnement. The …

FIG. 14

FIG. 14 shows an X-ray Diﬀraction (XRD) scan of an InGaN superlattice SCH layer (In % = 10 %), plotting counts (l k= 1000, 1 M = 106) vs. Omega/2 T heta.

FIG. 15

FIG. 15 is the top surface of layer 418 and is a (20-21) semipolar plane. The clear fringe peaks in the XRD scan indicate good crystal quality and coherent …

FIG. 16

FIG. 16 shows an SEM image of the representative cleaved facets 1600 of the laser devices, showing the LD may further comprise a laser cavity bounded by two 25 …

FIG. 17

FIG. 17 shows reciprocal lattice mapping of Laser B, showing mapping of GaN 1700 and InGaN SCH and QWs 1702, and conﬁrming coherent growth. Coherent growth …

FIG. 18

FIG. 18 shows the scatter plot of EL output power as a function of wavelength of the laser epitaxial wafers. The epitaxial wafers with AlGaN barriers 432 have …

FIG. 19

performance graph

FIG. 19(b) shows the threshold current was 720 mA, corresponding to a threshold current density of a 30 kA/cm2. The spontaneous emission spectrum of

FIG. 20

FIG. 20 shows that 513 nm lasing was achieved by using an embodiment of the present invention, showing output intensity of the laser in arbitrary units (a.u.), …

FIG. 21

FIG. 21 [21], the estimated optical conﬁnement 30 factor was 3.33% with GaN barrier and 50 nm n- and p-Ino. IGao.9N guiding layers. The optical conﬁnement …

FIG. 22

FIG. 23

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FIG. 28

FIG. 29

FIG. 30

FIG. 30 4(c).

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

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IndependentAlGaNInGaN
The use of AlGaN barrier layers resulted in reduction of large scale 25 triangular defects in the green light emitting quantum wells.
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IndependentAlGaNInGaN
The use of AlGaN barrier layers resulted in smooth surface morphology and uniform quantum emission, with higher In composition bulk SCH layers (In % > 7 %).
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IndependentInGaNInGaN
The use of InGaN superlattice SCH layers allowed growth of high In containing InGaN layers. 30 4. The use of an asymmetric InGaN SPSLS allowed growth of high In containing InGaN layers. References The following references are incorporated by reference herein. [1] S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. 5 Matsushita, H. Kiyoku, and Y. Sugimoto: Jpn. J. App l e. Phys. 35 (1996) L74. [2] A. Avramescu, T. Lermer, J. M u ller, C. Eichler, C. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss: App l. Phys. Express 3 (2 0 10) 061003. [3] J. S. Speck and S. F. Chichibu: MRS Bull. 34 (2009) 304. [4] H. Ohta and K. Okamoto: MRS Bull. 34 (2009) 324. 10 [5] K. M. Kelchner, Y. D. Lin, M. T. Hardy, C. Y. Huang, P. S. Hsu, R. M. Farrell1, D. A. Haeger, H. C. Kuo, F. Wu, K. Fujito, D. A. Cohen, A. Chakraborty, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars: Appl. Phys. Express 2 (2009) 071003. [7] K. C. Kim, M. C. Schmidt, H. Sato, F. Wu, N. Fellows, Z. Jia, M. Saito, K. 15 Fujito, S. Nakamura, S. P. DenBaars, and J. S. Speck: Appl. Phys. Lett. 91 (2007) 181120. [8] Y. D. Lin, A. Chakraborty, S. Brinkley, H. C. Kuo, T. Melo, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura: Appl. Phys. Lett. 94 (2009) 261108. [9] S. H. Park and D. Ahn: Appl. Phys. Lett. 90 (2007) 013505. [10] S. H. Park and D. Ahn: IEEE J. Quantum Electron. 43 (2007) 1175. 20 [11] M. Kubota, K. Okamoto, T. Tanaka, and H. Ohta: Appl. Phys. Express 1 (2008) 011102. [12] K. Okamoto, T. Tanaka, and M. Kubota: Appl. Phys. Express 1 (2008) 072201. [13] Y. Tsuda, M. Ohta, P. O. Vaccaro, S. Ito, S. Hirukawa, Y. Kawaguchi, Y. 25 Fujishiro, Y. Takahira, Y. Ueta, T. Takakura, and T. Yuasa: Appl. Phys. Express 1 (2008) 011104. [14] Y. D. Lin: Dr. Thesis, Electrical and Computer Engineering Department, University of California, Santa Barbara (2010). [15] Y. D. Lin, M. T. Hardy, P. S. Hsu, K. M. Kelchner, C. Y. Huang, D. A. 30 Haeger, R. M. Farrell, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura: Appl. Phys. Express 2 (2009) 082102. [16] K. Okamoto, J. Kashiwagi, T. Tanaka, and M. Kuboto: App l. Phys. Lett. 94 (2009) 071105. [17] F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck: App l. Phys. Lett. 96 (2010) 231912. 5 [18] Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura: App l. Phys. Express 2 (2009) 082101. [19] J. W. Raring, E. M. Hall, M. C. Schmidt, C. Poblenz, B. Li, N. Pﬁster, D. F. Feezell, R. Craig, J. S. Speck, S. P. DenBaars, and S. Nakamura: Proc. SPIE 7602 10 (2010) 760218. [20] A. Tyagi, R. M. Farrell, K. M. Kelchner, C. Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. Cohen, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura: Appl. Phys. Express 3 (2009) 011002. [21] A. Tyagi, F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. 15 Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck: Appl. Phys. Lett. 95 (2009) 251905. [22] C. Y. Huang, Y. D. Lin, A. Tyagi, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura: J. Appl. Phys. 107 (2010) 023101. [23] Yoshizumi et al., Applied Physics Express 2 (2009) 092101. [24] Powerpoint slides by You-Da Lin, entitled "Development of 516 nm green 20 LDs for m-plane and semipolar GaN" Solid State Lighting and Energy Center Annual Review, University of California, Santa Barbara,. [25] You-Da Lin et. al., "High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes," Applied Physics Express 3 (2010) 082001. [26] Tyagi et al., Applied Physics Express 3 (2010) 011002. 25 [27] Chakraborty et. al., U.S. Patent Publication No. US 2010/0309943, published, entitled "Long Wavelength Nonpolar and Semipolar (Al,Ga,In)N based laser diodes." Conclusion 30 This concludes the description of the preferred embodiment of the present invention. The foregoing description of one or more embodiments of the invention has 29 been presented for the purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed. Many modiﬁcations and variations are possible in light of the above teaching. It is intended that the scope of the invention be limited not by this detailed description, but rather by the claims 5 appended hereto. Claims What is claimed is:
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1. 26
  Dependent← claim 23AlGaNInGaNsemipolar plane III-nitride semiconductor-based optoelectronic device with AlGaN quantum well barriers
  A method for fab n cating a semipolar plane III-nitnde semiconductor-based optoelectro ni c device structure, comp rising The method of claim 23, f u rther comp risig- forming one or more I II -Nit ri de device la y ers including an active region, wherei n- the active region compnses an Indium (In) containing quantum well la yer positioned between ﬁrst and second Aluminum (Al) quantum well bar ri er la yers, the Al quantum well bar ri er la y ers having one or more Al compositions, and the forming includes-selecting the Al compositions to obtain the device la y ers having a density of tnang ular dark defects less than 4 5 X 10 3 c m 2, wherein the tnan g ular dark defects include tnan g ular non-luminescent defects, dep osil ting the Al containing ba rr ier layers,
24
IndependentAlGaNsemipolar plane III-nitride semiconductor-based optoelectronic device with AlGaN quantum well barriers
A method of using an Aluminum (Al) containing bar ri er layer in a quantum well structure of a device, comp ri sing-deter mni ng one or more acceptable amounts of one or more defects selected from misﬁt dislocations, stacking faults, and t nang ular dark defects, and t riang ular non-luminescent defects, selecting one or more Al compositions to obtain the amounts of the one or more defects, depositing, in a quantum well structure of a device, one or more Al containing bar ri er layers having the one or more Al compositions to reduce or prevent formation of the one or more of- the ﬂlowmng misﬁt dislocations, stackng faults, tn ang u lar dark defects, or t r ang dl ar non lurmmnescent defects in the device, and measu ri ng the one or more defects to conﬁrm the one or more amounts were obtained

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

semipolar plane III-nitride semiconductor-based optoelectronic device with AlGaN quantum well barriers

AlGaNelectron blocking layer

AlGaNquantum well barrier

InGaNquantum well

AlGaNquantum well barrier

GaNsubstrate

semipolar laser diode with InGaN/GaN or InGaN/AlGaN superlattice SCH

Materials

Materials described outside the worked examples.

AlGaN

Quantum Well Barrier

Electron Blocking Layer

InGaN

Characterization

Measurements and analyses referenced in the patent, with their drawing references.

thickness

Thickness

FIG. 1.

Figure references

FIG. 1

GaNGaN

tem

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
lasing wavelength semipolar (20-21) nitride with AlGaN barriers	516 nm	InGaN
Thickness

Why these are connected

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ALUMINUM GALLIUM NITRIDE BARRIERS AND SEPARATE CONFINEMENT HETEROSTRUCTURE (SCH) LAYERS FOR SEMIPOLAR PLANE III-NITRIDE SEMICONDUCTOR-BASED LIGHT EMITTING DIODES AND LASER DIODES | Matter42 Literature