Patent
US 8,247,310METHOD FOR MAKING GALLIUM NITRIDE SUBSTRATE
JIAN-SHIHN TSANG
US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
Patent
US 8,247,310Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, a GaN single crystal substrate 110 is first provided. The single crystal substrate 110 can be formed by hydride vapor epitaxy (HVPE), ammonothermal …
FIG. 2, a mask layer 120 is then formed on a surface of the GaN single crystal substrate 110. The mask layer 120 can be silicon nitrides (SiN X) or silicon …
FIG. 3, ions are implanted into the single crystal substrate 110 from the surface having the mask layer 120. An ion implant layer 130 is then formed Page 3 of …
FIG. 4, a first metal layer 140 is formed on a surface of the mask layer 120 opposite to the GaN single crystal substrate 110. The first metal layer 140 can be …
FIG. 5, an assistant substrate 210 with a second metal layer 220 is provided. The assistant substrate 210 is selected from the group consisting of silicon …
FIG. 6, the second metal layer 220 is connected to the first metal layer 140 to cooperatively form a connecting layer 310. The connecting layer 310 connects the …
FIG. 7. DETAILED DESCRIPTION [0014] An embodiment of a method for forming a GaN substrate will now be described in detail below and with reference to the …
FIG. 8. A thickness of the GaN film 150 is not less than 100 nm. [0023] It is believed that the present embodiments and their advantages will be understood from …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method for making a GaN substrate, comprising steps o f: providing a GaN single crystal substrate; forming an ion implanting layer inside the GaN single crystal substrate, the ion planting layer dividing the GaN single crystal substrate into a first section and a second section; providing an assistant substrate and a connecting layer and connecting the GaN single crystal substrate to the assistant substrate through the connecting layer; heating the GaN single crystal substrate to make the ion implanting layer decompounded; and separating the second section from the first section to have the first section left on a surface of the assistant substrate for growing a nitride semiconductor on the first section; wherein the method of forming the connecting la y er comprises steps of: forming a first metal la v er on a surface of the GaN single crystal substrate; forming a second metal la v er on a surface of the assistant substrate; and 2 of 8 App l e. No.: 13/049,911 Reply to Office action of: Attorney Docket No.: connecting the first metal la y er with the second metal la y er to cooperativel y form the connecting layer.
: The method for making a GaN substrate of claim 1, wherein the method of forming the ion implanting layer comprises steps of: forming a mask layer on a surface of the GaN single crystal substrate; and implanting ions into the GaN single crystal substrate from the surface having the mask layer and forming the ion implanting layer inside the GaN single crystal substrate.
: The method for making a GaN substrate of claim 1, wherein a thickness of the first section is greater than 1 micron.
: The method for making a GaN substrate of claim 1, wherein the assistant substrate is selected from the group consisting of silicon substrate, alumina substrate and aluminum nitride substrate.
: The method for making a GaN substrate of claim 1, wherein after second section is separated from the first section to have the first section left on the surface of the assistant substrate, a step of polishing the first section to form a GaN film is proceeded.
: The method for making a GaN substrate of claim 1, wherein the heating of the GaN single crystal substrate is processed at a temperature of 600 ° C to 900 °C.
: The method for making a GaN substrate of claim 1, wherein a thickness of the GaN single crystal substrate is between 20 microns and 500 microns.
canceled
: The method for making a GaN substrate of claim [[8]] 1, wherein a thermal treatment is provided to the first metal layer and the second metal layer during the step of connecting the first metal layer with the second metal layer.
: The method for making a GaN substrate of claim 9, wherein the thermal treatment is processed in an ammonia gas ambient for nitriding the connecting layer.
: The method for making a GaN substrate of claim [[8]] 1, wherein the first metal layer and the second metal layer are made of chromium.
: The method for making a GaN substrate of claim [[8]] 1, wherein the first metal layer is formed on the surface of the GaN single crystal substrate by electron beam vapor deposition or plasma vapor deposition.
: The method for making a GaN substrate of claim [[8]] 1, wherein the second metal layer is formed on a surface of the assistant substrate by electron beam vapor deposition or plasma vapor deposition.
Materials described outside the worked examples.
GaN single crystal substrate
GaN
first metal layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1, a GaN single crystal substrate 110 is first provided. The single crystal substrate 110 can be formed by hydride vapor epitaxy (HVPE), ammonothermal …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN single crystal substrate thickness | 20–500 microns | GaN |
GaN first section minimum thickness | ≥ 1 microns |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,247,310Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, a GaN single crystal substrate 110 is first provided. The single crystal substrate 110 can be formed by hydride vapor epitaxy (HVPE), ammonothermal …
FIG. 2, a mask layer 120 is then formed on a surface of the GaN single crystal substrate 110. The mask layer 120 can be silicon nitrides (SiN X) or silicon …
FIG. 3, ions are implanted into the single crystal substrate 110 from the surface having the mask layer 120. An ion implant layer 130 is then formed Page 3 of …
FIG. 4, a first metal layer 140 is formed on a surface of the mask layer 120 opposite to the GaN single crystal substrate 110. The first metal layer 140 can be …
FIG. 5, an assistant substrate 210 with a second metal layer 220 is provided. The assistant substrate 210 is selected from the group consisting of silicon …
FIG. 6, the second metal layer 220 is connected to the first metal layer 140 to cooperatively form a connecting layer 310. The connecting layer 310 connects the …
FIG. 7. DETAILED DESCRIPTION [0014] An embodiment of a method for forming a GaN substrate will now be described in detail below and with reference to the …
FIG. 8. A thickness of the GaN film 150 is not less than 100 nm. [0023] It is believed that the present embodiments and their advantages will be understood from …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method for making a GaN substrate, comprising steps o f: providing a GaN single crystal substrate; forming an ion implanting layer inside the GaN single crystal substrate, the ion planting layer dividing the GaN single crystal substrate into a first section and a second section; providing an assistant substrate and a connecting layer and connecting the GaN single crystal substrate to the assistant substrate through the connecting layer; heating the GaN single crystal substrate to make the ion implanting layer decompounded; and separating the second section from the first section to have the first section left on a surface of the assistant substrate for growing a nitride semiconductor on the first section; wherein the method of forming the connecting la y er comprises steps of: forming a first metal la v er on a surface of the GaN single crystal substrate; forming a second metal la v er on a surface of the assistant substrate; and 2 of 8 App l e. No.: 13/049,911 Reply to Office action of: Attorney Docket No.: connecting the first metal la y er with the second metal la y er to cooperativel y form the connecting layer.
: The method for making a GaN substrate of claim 1, wherein the method of forming the ion implanting layer comprises steps of: forming a mask layer on a surface of the GaN single crystal substrate; and implanting ions into the GaN single crystal substrate from the surface having the mask layer and forming the ion implanting layer inside the GaN single crystal substrate.
: The method for making a GaN substrate of claim 1, wherein a thickness of the first section is greater than 1 micron.
: The method for making a GaN substrate of claim 1, wherein the assistant substrate is selected from the group consisting of silicon substrate, alumina substrate and aluminum nitride substrate.
: The method for making a GaN substrate of claim 1, wherein after second section is separated from the first section to have the first section left on the surface of the assistant substrate, a step of polishing the first section to form a GaN film is proceeded.
: The method for making a GaN substrate of claim 1, wherein the heating of the GaN single crystal substrate is processed at a temperature of 600 ° C to 900 °C.
: The method for making a GaN substrate of claim 1, wherein a thickness of the GaN single crystal substrate is between 20 microns and 500 microns.
canceled
: The method for making a GaN substrate of claim [[8]] 1, wherein a thermal treatment is provided to the first metal layer and the second metal layer during the step of connecting the first metal layer with the second metal layer.
: The method for making a GaN substrate of claim 9, wherein the thermal treatment is processed in an ammonia gas ambient for nitriding the connecting layer.
: The method for making a GaN substrate of claim [[8]] 1, wherein the first metal layer and the second metal layer are made of chromium.
: The method for making a GaN substrate of claim [[8]] 1, wherein the first metal layer is formed on the surface of the GaN single crystal substrate by electron beam vapor deposition or plasma vapor deposition.
: The method for making a GaN substrate of claim [[8]] 1, wherein the second metal layer is formed on a surface of the assistant substrate by electron beam vapor deposition or plasma vapor deposition.
Materials described outside the worked examples.
GaN single crystal substrate
GaN
first metal layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1, a GaN single crystal substrate 110 is first provided. The single crystal substrate 110 can be formed by hydride vapor epitaxy (HVPE), ammonothermal …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN single crystal substrate thickness | 20–500 microns | GaN |
GaN first section minimum thickness | ≥ 1 microns |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,247,310Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, a GaN single crystal substrate 110 is first provided. The single crystal substrate 110 can be formed by hydride vapor epitaxy (HVPE), ammonothermal …
FIG. 2, a mask layer 120 is then formed on a surface of the GaN single crystal substrate 110. The mask layer 120 can be silicon nitrides (SiN X) or silicon …
FIG. 3, ions are implanted into the single crystal substrate 110 from the surface having the mask layer 120. An ion implant layer 130 is then formed Page 3 of …
FIG. 4, a first metal layer 140 is formed on a surface of the mask layer 120 opposite to the GaN single crystal substrate 110. The first metal layer 140 can be …
FIG. 5, an assistant substrate 210 with a second metal layer 220 is provided. The assistant substrate 210 is selected from the group consisting of silicon …
FIG. 6, the second metal layer 220 is connected to the first metal layer 140 to cooperatively form a connecting layer 310. The connecting layer 310 connects the …
FIG. 7. DETAILED DESCRIPTION [0014] An embodiment of a method for forming a GaN substrate will now be described in detail below and with reference to the …
FIG. 8. A thickness of the GaN film 150 is not less than 100 nm. [0023] It is believed that the present embodiments and their advantages will be understood from …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method for making a GaN substrate, comprising steps o f: providing a GaN single crystal substrate; forming an ion implanting layer inside the GaN single crystal substrate, the ion planting layer dividing the GaN single crystal substrate into a first section and a second section; providing an assistant substrate and a connecting layer and connecting the GaN single crystal substrate to the assistant substrate through the connecting layer; heating the GaN single crystal substrate to make the ion implanting layer decompounded; and separating the second section from the first section to have the first section left on a surface of the assistant substrate for growing a nitride semiconductor on the first section; wherein the method of forming the connecting la y er comprises steps of: forming a first metal la v er on a surface of the GaN single crystal substrate; forming a second metal la v er on a surface of the assistant substrate; and 2 of 8 App l e. No.: 13/049,911 Reply to Office action of: Attorney Docket No.: connecting the first metal la y er with the second metal la y er to cooperativel y form the connecting layer.
: The method for making a GaN substrate of claim 1, wherein the method of forming the ion implanting layer comprises steps of: forming a mask layer on a surface of the GaN single crystal substrate; and implanting ions into the GaN single crystal substrate from the surface having the mask layer and forming the ion implanting layer inside the GaN single crystal substrate.
: The method for making a GaN substrate of claim 1, wherein a thickness of the first section is greater than 1 micron.
: The method for making a GaN substrate of claim 1, wherein the assistant substrate is selected from the group consisting of silicon substrate, alumina substrate and aluminum nitride substrate.
: The method for making a GaN substrate of claim 1, wherein after second section is separated from the first section to have the first section left on the surface of the assistant substrate, a step of polishing the first section to form a GaN film is proceeded.
: The method for making a GaN substrate of claim 1, wherein the heating of the GaN single crystal substrate is processed at a temperature of 600 ° C to 900 °C.
: The method for making a GaN substrate of claim 1, wherein a thickness of the GaN single crystal substrate is between 20 microns and 500 microns.
canceled
: The method for making a GaN substrate of claim [[8]] 1, wherein a thermal treatment is provided to the first metal layer and the second metal layer during the step of connecting the first metal layer with the second metal layer.
: The method for making a GaN substrate of claim 9, wherein the thermal treatment is processed in an ammonia gas ambient for nitriding the connecting layer.
: The method for making a GaN substrate of claim [[8]] 1, wherein the first metal layer and the second metal layer are made of chromium.
: The method for making a GaN substrate of claim [[8]] 1, wherein the first metal layer is formed on the surface of the GaN single crystal substrate by electron beam vapor deposition or plasma vapor deposition.
: The method for making a GaN substrate of claim [[8]] 1, wherein the second metal layer is formed on a surface of the assistant substrate by electron beam vapor deposition or plasma vapor deposition.
Materials described outside the worked examples.
GaN single crystal substrate
GaN
first metal layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1, a GaN single crystal substrate 110 is first provided. The single crystal substrate 110 can be formed by hydride vapor epitaxy (HVPE), ammonothermal …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN single crystal substrate thickness | 20–500 microns | GaN |
GaN first section minimum thickness | ≥ 1 microns |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,247,310Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, a GaN single crystal substrate 110 is first provided. The single crystal substrate 110 can be formed by hydride vapor epitaxy (HVPE), ammonothermal …
FIG. 2, a mask layer 120 is then formed on a surface of the GaN single crystal substrate 110. The mask layer 120 can be silicon nitrides (SiN X) or silicon …
FIG. 3, ions are implanted into the single crystal substrate 110 from the surface having the mask layer 120. An ion implant layer 130 is then formed Page 3 of …
FIG. 4, a first metal layer 140 is formed on a surface of the mask layer 120 opposite to the GaN single crystal substrate 110. The first metal layer 140 can be …
FIG. 5, an assistant substrate 210 with a second metal layer 220 is provided. The assistant substrate 210 is selected from the group consisting of silicon …
FIG. 6, the second metal layer 220 is connected to the first metal layer 140 to cooperatively form a connecting layer 310. The connecting layer 310 connects the …
FIG. 7. DETAILED DESCRIPTION [0014] An embodiment of a method for forming a GaN substrate will now be described in detail below and with reference to the …
FIG. 8. A thickness of the GaN film 150 is not less than 100 nm. [0023] It is believed that the present embodiments and their advantages will be understood from …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method for making a GaN substrate, comprising steps o f: providing a GaN single crystal substrate; forming an ion implanting layer inside the GaN single crystal substrate, the ion planting layer dividing the GaN single crystal substrate into a first section and a second section; providing an assistant substrate and a connecting layer and connecting the GaN single crystal substrate to the assistant substrate through the connecting layer; heating the GaN single crystal substrate to make the ion implanting layer decompounded; and separating the second section from the first section to have the first section left on a surface of the assistant substrate for growing a nitride semiconductor on the first section; wherein the method of forming the connecting la y er comprises steps of: forming a first metal la v er on a surface of the GaN single crystal substrate; forming a second metal la v er on a surface of the assistant substrate; and 2 of 8 App l e. No.: 13/049,911 Reply to Office action of: Attorney Docket No.: connecting the first metal la y er with the second metal la y er to cooperativel y form the connecting layer.
: The method for making a GaN substrate of claim 1, wherein the method of forming the ion implanting layer comprises steps of: forming a mask layer on a surface of the GaN single crystal substrate; and implanting ions into the GaN single crystal substrate from the surface having the mask layer and forming the ion implanting layer inside the GaN single crystal substrate.
: The method for making a GaN substrate of claim 1, wherein a thickness of the first section is greater than 1 micron.
: The method for making a GaN substrate of claim 1, wherein the assistant substrate is selected from the group consisting of silicon substrate, alumina substrate and aluminum nitride substrate.
: The method for making a GaN substrate of claim 1, wherein after second section is separated from the first section to have the first section left on the surface of the assistant substrate, a step of polishing the first section to form a GaN film is proceeded.
: The method for making a GaN substrate of claim 1, wherein the heating of the GaN single crystal substrate is processed at a temperature of 600 ° C to 900 °C.
: The method for making a GaN substrate of claim 1, wherein a thickness of the GaN single crystal substrate is between 20 microns and 500 microns.
canceled
: The method for making a GaN substrate of claim [[8]] 1, wherein a thermal treatment is provided to the first metal layer and the second metal layer during the step of connecting the first metal layer with the second metal layer.
: The method for making a GaN substrate of claim 9, wherein the thermal treatment is processed in an ammonia gas ambient for nitriding the connecting layer.
: The method for making a GaN substrate of claim [[8]] 1, wherein the first metal layer and the second metal layer are made of chromium.
: The method for making a GaN substrate of claim [[8]] 1, wherein the first metal layer is formed on the surface of the GaN single crystal substrate by electron beam vapor deposition or plasma vapor deposition.
: The method for making a GaN substrate of claim [[8]] 1, wherein the second metal layer is formed on a surface of the assistant substrate by electron beam vapor deposition or plasma vapor deposition.
Materials described outside the worked examples.
GaN single crystal substrate
GaN
first metal layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1, a GaN single crystal substrate 110 is first provided. The single crystal substrate 110 can be formed by hydride vapor epitaxy (HVPE), ammonothermal …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN single crystal substrate thickness | 20–500 microns | GaN |
GaN first section minimum thickness | ≥ 1 microns |
Related documents with shared materials, methods, properties, or citations.
mask layer
hydrogen ions
H+
ammonia gas
NH₃
chromium
Cr
assistant substrate
silicon nitride mask layer
SiNx
silicon oxide mask layer
SiOx
chromium nitride
CrN
nitride semiconductor
FIG. 8. A thickness of the GaN film 150 is not less than 100 nm. [0023] It is believed that the present embodiments and their advantages will be understood from …
GaN film minimum thickness after polishing | ≥ 100 nm | GaN |
Thickness | 20–500 µm | — |
Thickness | ≤ 1 nm | — |
Temperature | 600–900 °C | — |
Thickness | ≥ 1 µm | — |
mask layer
hydrogen ions
H+
ammonia gas
NH₃
chromium
Cr
assistant substrate
silicon nitride mask layer
SiNx
silicon oxide mask layer
SiOx
chromium nitride
CrN
nitride semiconductor
FIG. 8. A thickness of the GaN film 150 is not less than 100 nm. [0023] It is believed that the present embodiments and their advantages will be understood from …
GaN film minimum thickness after polishing | ≥ 100 nm | GaN |
Thickness | 20–500 µm | — |
Thickness | ≤ 1 nm | — |
Temperature | 600–900 °C | — |
Thickness | ≥ 1 µm | — |
mask layer
hydrogen ions
H+
ammonia gas
NH₃
chromium
Cr
assistant substrate
silicon nitride mask layer
SiNx
silicon oxide mask layer
SiOx
chromium nitride
CrN
nitride semiconductor
FIG. 8. A thickness of the GaN film 150 is not less than 100 nm. [0023] It is believed that the present embodiments and their advantages will be understood from …
GaN film minimum thickness after polishing | ≥ 100 nm | GaN |
Thickness | 20–500 µm | — |
Thickness | ≤ 1 nm | — |
Temperature | 600–900 °C | — |
Thickness | ≥ 1 µm | — |
mask layer
hydrogen ions
H+
ammonia gas
NH₃
chromium
Cr
assistant substrate
silicon nitride mask layer
SiNx
silicon oxide mask layer
SiOx
chromium nitride
CrN
nitride semiconductor
FIG. 8. A thickness of the GaN film 150 is not less than 100 nm. [0023] It is believed that the present embodiments and their advantages will be understood from …
GaN film minimum thickness after polishing | ≥ 100 nm | GaN |
Thickness | 20–500 µm | — |
Thickness | ≤ 1 nm | — |
Temperature | 600–900 °C | — |
Thickness | ≥ 1 µm | — |