Patent
US 12,476,108 B2GaN SUBSTRATE WAFER AND PRODUCTION METHOD FOR SAME
Yuuki Enatsu, Kenji Iso
MITSUBISHI CHEMICAL CORPORATION, Tokyo (JP)·Nov. 18, 2025·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 12,476,108 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view illustrating a GaN substrate wafer according to one embodiment.
FIG. 2 is a cross-sectional view illustrating the GaN substrate wafer according to one embodiment.
FIG. 3 is a cross-sectional view illustrating a GaN sub- strate wafer according to another embodiment.
FIG. 4(a), and an epitaxial film 200 which includes at least an undoped GaN channel layer 210 and an undoped AlGaN carrier supply layer 220 is subsequently …
FIG. 5(a) is prepared, and a (0001)-oriented first thick GaN film 2, which is formed of GaN not intentionally doped, is subsequently grown thereon by HVPE as …
FIG. 6(a) is a cross-sectional view that illustrates a single first c-plane GaN wafer 3 produced in the first step. It is noted here, however, that the first …
FIG. 7(b), a (0001)- oriented GaN film 6 having a growth thickness t6g of greater than 50 µm is grown on the Ga-polar surface of the second 35 c-plane GaN wafer …
FIG. 8. An HVPE apparatus 10 illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A (0001)-oriented GaN substrate wafer, comprising a first region arranged on an N-polar side and a second region, which is arranged on a Ga-polar side and has a minimum thickness, via a regrowth interface therebetween, wherein the minimum thickness of the second region is not less than 20 µm and is 200 µm or less, and 40 at least a portion of the second region has a total com-pensating impurity concentration of 1×1017 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein the first region satisfies one or more conditions selected from the following (a) to (c): (a) the Si concentration is 5×1016 atoms/cm3 or higher; (b) the O concentration is 3×1016 atoms/cm3 or lower, and (c) the H concentration is 1×1017 atoms/cm3 or lower.
The GaN substrate wafer according to claim 1, wherein, in the first region, a total compensating impurity concentra-tion is lower than a total donor impurity concentration.
The GaN substrate wafer according to claim 1, wherein, in the first region, the total compensating impurity concen-tration is lower than 1×1017 atoms/cm3.
The GaN substrate wafer according to claim 1, wherein, in the first region, the concentrations of impurity elements other than Si, O, and H are independently 5×1015 atoms/cm3 or lower.
The GaN substrate wafer according to claim 1, satis-fying one condition selected from the following (1) to (3): (1) having a diameter of 50 mm to 55 mm and a thickness of 250 µm to 450 µm; (2) having a diameter of 100 mm to 105 mm and a thickness of 350 µm to 750 µm; and (3) having a diameter of 150 mm to 155 mm and a thickness of 450 µm to 800 µm.
The GaN substrate wafer according to claim 1, wherein the second region comprises a main doped region com-prising at least a main surface of the Ga-polar side, and the main doped region has a total compensating impurity concentration of 1×1017 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein a main surface of the Ga-polar side is a flat surface.
An epitaxial wafer, comprising: the GaN substrate wafer according to claim 1; and a nitride semiconductor layer epitaxially grown on the main surface of the Ga-polar side of the GaN substrate wafer.
A method of producing an epitaxial wafer, the method comprising: preparing the GaN substrate wafer according to claim 1; and growing a nitride semiconductor layer on the main surface of the Ga-polar side of the GaN substrate wafer.
A method of producing a nitride semiconductor device, the method comprising: preparing the GaN substrate wafer according to claim 1; growing a nitride semiconductor layer on the main surface of the Ga-polar side of the GaN substrate wafer to obtain an epitaxial wafer; and removing the first region of the GaN substrate wafer from at least a portion of the epitaxial wafer.
The GaN substrate wafer according to claim 1, wherein an overall thickness of the GaN substrate wafer is 250 µm to 800 µm.
The GaN substrate wafer according to claim 1, wherein the GaN substrate wafer has a disk shape, a diam-eter of about 2 inches, and an overall thickness of 300 µm to 450 µm.
The GaN substrate wafer according to claim 1, wherein the GaN substrate wafer has a disk shape, a diam-eter of about 4 inches, and an overall thickness of 350 µm to 650 µm. 23 24
The GaN substrate wafer according to claim 1, wherein the GaN substrate wafer has a disk shape, a diam-eter of about 6 inches, and an overall thickness of 450 µm to 700 µm.
A (0001)-oriented GaN substrate wafer, comprising a first region arranged on an N-polar side and a second region, which is arranged on a Ga-polar side and has a minimum thickness, via a regrowth interface therebetween, wherein the minimum thickness of the second region is not less than 20 µm and is 350 µm or less, at least a portion of the second region has a total com-pensating impurity concentration of 1×1017 atoms/cm3 or higher, and an overall thickness of the GaN substrate wafer is 250 µm to 800 µm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
(0001)-oriented GaN substrate wafer with regrowth interface
epitaxial wafer
Materials described outside the worked examples.
GaN substrate wafer
GaN
nitride semiconductor layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6(a) is a cross-sectional view that illustrates a single first c-plane GaN wafer 3 produced in the first step. It is noted here, however, that the first …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–55 mm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 21
Related documents with shared materials, methods, properties, or citations.
Method for Etching a Group III Nitride Semiconductor, Method for Producing a Group III Nitride Semiconductor Crystal, and Method for Producing a GaN Substrate
GAN SUBSTRATE WAFER AND METHOD FOR MANUFACTURING SAME
Patent
Atlas literature
Patent
US 12,476,108 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view illustrating a GaN substrate wafer according to one embodiment.
FIG. 2 is a cross-sectional view illustrating the GaN substrate wafer according to one embodiment.
FIG. 3 is a cross-sectional view illustrating a GaN sub- strate wafer according to another embodiment.
FIG. 4(a), and an epitaxial film 200 which includes at least an undoped GaN channel layer 210 and an undoped AlGaN carrier supply layer 220 is subsequently …
FIG. 5(a) is prepared, and a (0001)-oriented first thick GaN film 2, which is formed of GaN not intentionally doped, is subsequently grown thereon by HVPE as …
FIG. 6(a) is a cross-sectional view that illustrates a single first c-plane GaN wafer 3 produced in the first step. It is noted here, however, that the first …
FIG. 7(b), a (0001)- oriented GaN film 6 having a growth thickness t6g of greater than 50 µm is grown on the Ga-polar surface of the second 35 c-plane GaN wafer …
FIG. 8. An HVPE apparatus 10 illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A (0001)-oriented GaN substrate wafer, comprising a first region arranged on an N-polar side and a second region, which is arranged on a Ga-polar side and has a minimum thickness, via a regrowth interface therebetween, wherein the minimum thickness of the second region is not less than 20 µm and is 200 µm or less, and 40 at least a portion of the second region has a total com-pensating impurity concentration of 1×1017 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein the first region satisfies one or more conditions selected from the following (a) to (c): (a) the Si concentration is 5×1016 atoms/cm3 or higher; (b) the O concentration is 3×1016 atoms/cm3 or lower, and (c) the H concentration is 1×1017 atoms/cm3 or lower.
The GaN substrate wafer according to claim 1, wherein, in the first region, a total compensating impurity concentra-tion is lower than a total donor impurity concentration.
The GaN substrate wafer according to claim 1, wherein, in the first region, the total compensating impurity concen-tration is lower than 1×1017 atoms/cm3.
The GaN substrate wafer according to claim 1, wherein, in the first region, the concentrations of impurity elements other than Si, O, and H are independently 5×1015 atoms/cm3 or lower.
The GaN substrate wafer according to claim 1, satis-fying one condition selected from the following (1) to (3): (1) having a diameter of 50 mm to 55 mm and a thickness of 250 µm to 450 µm; (2) having a diameter of 100 mm to 105 mm and a thickness of 350 µm to 750 µm; and (3) having a diameter of 150 mm to 155 mm and a thickness of 450 µm to 800 µm.
The GaN substrate wafer according to claim 1, wherein the second region comprises a main doped region com-prising at least a main surface of the Ga-polar side, and the main doped region has a total compensating impurity concentration of 1×1017 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein a main surface of the Ga-polar side is a flat surface.
An epitaxial wafer, comprising: the GaN substrate wafer according to claim 1; and a nitride semiconductor layer epitaxially grown on the main surface of the Ga-polar side of the GaN substrate wafer.
A method of producing an epitaxial wafer, the method comprising: preparing the GaN substrate wafer according to claim 1; and growing a nitride semiconductor layer on the main surface of the Ga-polar side of the GaN substrate wafer.
A method of producing a nitride semiconductor device, the method comprising: preparing the GaN substrate wafer according to claim 1; growing a nitride semiconductor layer on the main surface of the Ga-polar side of the GaN substrate wafer to obtain an epitaxial wafer; and removing the first region of the GaN substrate wafer from at least a portion of the epitaxial wafer.
The GaN substrate wafer according to claim 1, wherein an overall thickness of the GaN substrate wafer is 250 µm to 800 µm.
The GaN substrate wafer according to claim 1, wherein the GaN substrate wafer has a disk shape, a diam-eter of about 2 inches, and an overall thickness of 300 µm to 450 µm.
The GaN substrate wafer according to claim 1, wherein the GaN substrate wafer has a disk shape, a diam-eter of about 4 inches, and an overall thickness of 350 µm to 650 µm. 23 24
The GaN substrate wafer according to claim 1, wherein the GaN substrate wafer has a disk shape, a diam-eter of about 6 inches, and an overall thickness of 450 µm to 700 µm.
A (0001)-oriented GaN substrate wafer, comprising a first region arranged on an N-polar side and a second region, which is arranged on a Ga-polar side and has a minimum thickness, via a regrowth interface therebetween, wherein the minimum thickness of the second region is not less than 20 µm and is 350 µm or less, at least a portion of the second region has a total com-pensating impurity concentration of 1×1017 atoms/cm3 or higher, and an overall thickness of the GaN substrate wafer is 250 µm to 800 µm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
(0001)-oriented GaN substrate wafer with regrowth interface
epitaxial wafer
Materials described outside the worked examples.
GaN substrate wafer
GaN
nitride semiconductor layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6(a) is a cross-sectional view that illustrates a single first c-plane GaN wafer 3 produced in the first step. It is noted here, however, that the first …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–55 mm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 21
Related documents with shared materials, methods, properties, or citations.
Method for Etching a Group III Nitride Semiconductor, Method for Producing a Group III Nitride Semiconductor Crystal, and Method for Producing a GaN Substrate
GAN SUBSTRATE WAFER AND METHOD FOR MANUFACTURING SAME
Patent
Atlas literature
Patent
US 12,476,108 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view illustrating a GaN substrate wafer according to one embodiment.
FIG. 2 is a cross-sectional view illustrating the GaN substrate wafer according to one embodiment.
FIG. 3 is a cross-sectional view illustrating a GaN sub- strate wafer according to another embodiment.
FIG. 4(a), and an epitaxial film 200 which includes at least an undoped GaN channel layer 210 and an undoped AlGaN carrier supply layer 220 is subsequently …
FIG. 5(a) is prepared, and a (0001)-oriented first thick GaN film 2, which is formed of GaN not intentionally doped, is subsequently grown thereon by HVPE as …
FIG. 6(a) is a cross-sectional view that illustrates a single first c-plane GaN wafer 3 produced in the first step. It is noted here, however, that the first …
FIG. 7(b), a (0001)- oriented GaN film 6 having a growth thickness t6g of greater than 50 µm is grown on the Ga-polar surface of the second 35 c-plane GaN wafer …
FIG. 8. An HVPE apparatus 10 illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A (0001)-oriented GaN substrate wafer, comprising a first region arranged on an N-polar side and a second region, which is arranged on a Ga-polar side and has a minimum thickness, via a regrowth interface therebetween, wherein the minimum thickness of the second region is not less than 20 µm and is 200 µm or less, and 40 at least a portion of the second region has a total com-pensating impurity concentration of 1×1017 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein the first region satisfies one or more conditions selected from the following (a) to (c): (a) the Si concentration is 5×1016 atoms/cm3 or higher; (b) the O concentration is 3×1016 atoms/cm3 or lower, and (c) the H concentration is 1×1017 atoms/cm3 or lower.
The GaN substrate wafer according to claim 1, wherein, in the first region, a total compensating impurity concentra-tion is lower than a total donor impurity concentration.
The GaN substrate wafer according to claim 1, wherein, in the first region, the total compensating impurity concen-tration is lower than 1×1017 atoms/cm3.
The GaN substrate wafer according to claim 1, wherein, in the first region, the concentrations of impurity elements other than Si, O, and H are independently 5×1015 atoms/cm3 or lower.
The GaN substrate wafer according to claim 1, satis-fying one condition selected from the following (1) to (3): (1) having a diameter of 50 mm to 55 mm and a thickness of 250 µm to 450 µm; (2) having a diameter of 100 mm to 105 mm and a thickness of 350 µm to 750 µm; and (3) having a diameter of 150 mm to 155 mm and a thickness of 450 µm to 800 µm.
The GaN substrate wafer according to claim 1, wherein the second region comprises a main doped region com-prising at least a main surface of the Ga-polar side, and the main doped region has a total compensating impurity concentration of 1×1017 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein a main surface of the Ga-polar side is a flat surface.
An epitaxial wafer, comprising: the GaN substrate wafer according to claim 1; and a nitride semiconductor layer epitaxially grown on the main surface of the Ga-polar side of the GaN substrate wafer.
A method of producing an epitaxial wafer, the method comprising: preparing the GaN substrate wafer according to claim 1; and growing a nitride semiconductor layer on the main surface of the Ga-polar side of the GaN substrate wafer.
A method of producing a nitride semiconductor device, the method comprising: preparing the GaN substrate wafer according to claim 1; growing a nitride semiconductor layer on the main surface of the Ga-polar side of the GaN substrate wafer to obtain an epitaxial wafer; and removing the first region of the GaN substrate wafer from at least a portion of the epitaxial wafer.
The GaN substrate wafer according to claim 1, wherein an overall thickness of the GaN substrate wafer is 250 µm to 800 µm.
The GaN substrate wafer according to claim 1, wherein the GaN substrate wafer has a disk shape, a diam-eter of about 2 inches, and an overall thickness of 300 µm to 450 µm.
The GaN substrate wafer according to claim 1, wherein the GaN substrate wafer has a disk shape, a diam-eter of about 4 inches, and an overall thickness of 350 µm to 650 µm. 23 24
The GaN substrate wafer according to claim 1, wherein the GaN substrate wafer has a disk shape, a diam-eter of about 6 inches, and an overall thickness of 450 µm to 700 µm.
A (0001)-oriented GaN substrate wafer, comprising a first region arranged on an N-polar side and a second region, which is arranged on a Ga-polar side and has a minimum thickness, via a regrowth interface therebetween, wherein the minimum thickness of the second region is not less than 20 µm and is 350 µm or less, at least a portion of the second region has a total com-pensating impurity concentration of 1×1017 atoms/cm3 or higher, and an overall thickness of the GaN substrate wafer is 250 µm to 800 µm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
(0001)-oriented GaN substrate wafer with regrowth interface
epitaxial wafer
Materials described outside the worked examples.
GaN substrate wafer
GaN
nitride semiconductor layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6(a) is a cross-sectional view that illustrates a single first c-plane GaN wafer 3 produced in the first step. It is noted here, however, that the first …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–55 mm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 21
Related documents with shared materials, methods, properties, or citations.
Method for Etching a Group III Nitride Semiconductor, Method for Producing a Group III Nitride Semiconductor Crystal, and Method for Producing a GaN Substrate
GAN SUBSTRATE WAFER AND METHOD FOR MANUFACTURING SAME
Patent
Atlas literature
Patent
US 12,476,108 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view illustrating a GaN substrate wafer according to one embodiment.
FIG. 2 is a cross-sectional view illustrating the GaN substrate wafer according to one embodiment.
FIG. 3 is a cross-sectional view illustrating a GaN sub- strate wafer according to another embodiment.
FIG. 4(a), and an epitaxial film 200 which includes at least an undoped GaN channel layer 210 and an undoped AlGaN carrier supply layer 220 is subsequently …
FIG. 5(a) is prepared, and a (0001)-oriented first thick GaN film 2, which is formed of GaN not intentionally doped, is subsequently grown thereon by HVPE as …
FIG. 6(a) is a cross-sectional view that illustrates a single first c-plane GaN wafer 3 produced in the first step. It is noted here, however, that the first …
FIG. 7(b), a (0001)- oriented GaN film 6 having a growth thickness t6g of greater than 50 µm is grown on the Ga-polar surface of the second 35 c-plane GaN wafer …
FIG. 8. An HVPE apparatus 10 illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A (0001)-oriented GaN substrate wafer, comprising a first region arranged on an N-polar side and a second region, which is arranged on a Ga-polar side and has a minimum thickness, via a regrowth interface therebetween, wherein the minimum thickness of the second region is not less than 20 µm and is 200 µm or less, and 40 at least a portion of the second region has a total com-pensating impurity concentration of 1×1017 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein the first region satisfies one or more conditions selected from the following (a) to (c): (a) the Si concentration is 5×1016 atoms/cm3 or higher; (b) the O concentration is 3×1016 atoms/cm3 or lower, and (c) the H concentration is 1×1017 atoms/cm3 or lower.
The GaN substrate wafer according to claim 1, wherein, in the first region, a total compensating impurity concentra-tion is lower than a total donor impurity concentration.
The GaN substrate wafer according to claim 1, wherein, in the first region, the total compensating impurity concen-tration is lower than 1×1017 atoms/cm3.
The GaN substrate wafer according to claim 1, wherein, in the first region, the concentrations of impurity elements other than Si, O, and H are independently 5×1015 atoms/cm3 or lower.
The GaN substrate wafer according to claim 1, satis-fying one condition selected from the following (1) to (3): (1) having a diameter of 50 mm to 55 mm and a thickness of 250 µm to 450 µm; (2) having a diameter of 100 mm to 105 mm and a thickness of 350 µm to 750 µm; and (3) having a diameter of 150 mm to 155 mm and a thickness of 450 µm to 800 µm.
The GaN substrate wafer according to claim 1, wherein the second region comprises a main doped region com-prising at least a main surface of the Ga-polar side, and the main doped region has a total compensating impurity concentration of 1×1017 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein a main surface of the Ga-polar side is a flat surface.
An epitaxial wafer, comprising: the GaN substrate wafer according to claim 1; and a nitride semiconductor layer epitaxially grown on the main surface of the Ga-polar side of the GaN substrate wafer.
A method of producing an epitaxial wafer, the method comprising: preparing the GaN substrate wafer according to claim 1; and growing a nitride semiconductor layer on the main surface of the Ga-polar side of the GaN substrate wafer.
A method of producing a nitride semiconductor device, the method comprising: preparing the GaN substrate wafer according to claim 1; growing a nitride semiconductor layer on the main surface of the Ga-polar side of the GaN substrate wafer to obtain an epitaxial wafer; and removing the first region of the GaN substrate wafer from at least a portion of the epitaxial wafer.
The GaN substrate wafer according to claim 1, wherein an overall thickness of the GaN substrate wafer is 250 µm to 800 µm.
The GaN substrate wafer according to claim 1, wherein the GaN substrate wafer has a disk shape, a diam-eter of about 2 inches, and an overall thickness of 300 µm to 450 µm.
The GaN substrate wafer according to claim 1, wherein the GaN substrate wafer has a disk shape, a diam-eter of about 4 inches, and an overall thickness of 350 µm to 650 µm. 23 24
The GaN substrate wafer according to claim 1, wherein the GaN substrate wafer has a disk shape, a diam-eter of about 6 inches, and an overall thickness of 450 µm to 700 µm.
A (0001)-oriented GaN substrate wafer, comprising a first region arranged on an N-polar side and a second region, which is arranged on a Ga-polar side and has a minimum thickness, via a regrowth interface therebetween, wherein the minimum thickness of the second region is not less than 20 µm and is 350 µm or less, at least a portion of the second region has a total com-pensating impurity concentration of 1×1017 atoms/cm3 or higher, and an overall thickness of the GaN substrate wafer is 250 µm to 800 µm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
(0001)-oriented GaN substrate wafer with regrowth interface
epitaxial wafer
Materials described outside the worked examples.
GaN substrate wafer
GaN
nitride semiconductor layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6(a) is a cross-sectional view that illustrates a single first c-plane GaN wafer 3 produced in the first step. It is noted here, however, that the first …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–55 mm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 21
Related documents with shared materials, methods, properties, or citations.
Method for Etching a Group III Nitride Semiconductor, Method for Producing a Group III Nitride Semiconductor Crystal, and Method for Producing a GaN Substrate
GAN SUBSTRATE WAFER AND METHOD FOR MANUFACTURING SAME
FIG. 7(b), a (0001)- oriented GaN film 6 having a growth thickness t6g of greater than 50 µm is grown on the Ga-polar surface of the second 35 c-plane GaN wafer …
| — |
Thickness | 100–105 mm | — |
Thickness | 350–750 µm | — |
Thickness | 150–155 mm | — |
Thickness | 450–800 µm | — |
Thickness | 250–800 µm | — |
Thickness | 300–450 µm | — |
Thickness | 350–650 µm | — |
Thickness | 450–700 µm | — |
Thickness | 15–800 µm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≥ 50 µm | — |
Cited non-patent literature · 4
FIG. 7(b), a (0001)- oriented GaN film 6 having a growth thickness t6g of greater than 50 µm is grown on the Ga-polar surface of the second 35 c-plane GaN wafer …
| — |
Thickness | 100–105 mm | — |
Thickness | 350–750 µm | — |
Thickness | 150–155 mm | — |
Thickness | 450–800 µm | — |
Thickness | 250–800 µm | — |
Thickness | 300–450 µm | — |
Thickness | 350–650 µm | — |
Thickness | 450–700 µm | — |
Thickness | 15–800 µm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≥ 50 µm | — |
Cited non-patent literature · 4
FIG. 7(b), a (0001)- oriented GaN film 6 having a growth thickness t6g of greater than 50 µm is grown on the Ga-polar surface of the second 35 c-plane GaN wafer …
| — |
Thickness | 100–105 mm | — |
Thickness | 350–750 µm | — |
Thickness | 150–155 mm | — |
Thickness | 450–800 µm | — |
Thickness | 250–800 µm | — |
Thickness | 300–450 µm | — |
Thickness | 350–650 µm | — |
Thickness | 450–700 µm | — |
Thickness | 15–800 µm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≥ 50 µm | — |
Cited non-patent literature · 4
FIG. 7(b), a (0001)- oriented GaN film 6 having a growth thickness t6g of greater than 50 µm is grown on the Ga-polar surface of the second 35 c-plane GaN wafer …
| — |
Thickness | 100–105 mm | — |
Thickness | 350–750 µm | — |
Thickness | 150–155 mm | — |
Thickness | 450–800 µm | — |
Thickness | 250–800 µm | — |
Thickness | 300–450 µm | — |
Thickness | 350–650 µm | — |
Thickness | 450–700 µm | — |
Thickness | 15–800 µm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≥ 50 µm | — |
Cited non-patent literature · 4