Patent
Atlas literature
Patent
US 11,670,687 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A and 1B, the substrate 1 has two main surfaces 11 parallel to each other and an edge surface 12. Chamfering can be performed, as necessary, for …
FIG. 2. The crystal growth apparatus 2 depicted in
FIG. 3. In the crystal growth apparatus 3 depicted in
FIG. 4, a plate-like GaN crystal of which thickness direction is the m-axis direction is grown from the opening of the mask pattern. The secondary substrate …
FIG. 5, the heating rate is constant from the heating step to the initial growth step. In the example of
FIG. 6, between the heating step and the initial growth step, the temperature keeping step of keeping the substrate tem- perature constant is provided. The …
FIG. 7, the heating rate is changed at the early and later stages of the initial growth step. In this example, the heating rate is changed discontinuously, but …
FIG. 8 is a cross-sectional view, and the semiconductor light- emitting device 40A has a semiconductor laminate L grown 65 on the main surface of the GaN …
FIG. 9 having a negative electrode 46 on the backside of the GaN substrate 41, the lowering effect of the operating voltage due to the increased carrier …
FIG. 10 is a schematic diagram for explaining a structure of a GaN layer bonded substrate.
FIG. 11 is a cross-sectional view depicting two seed substrates arranged on a susceptor. MODE FOR CARRYING OUT THE INVENTION The surface of a nitride …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, wherein the first main surface is a non-polar or semi-polar plane, a dislocation density measured by a room-temperature cathode luminescence method averaged over a whole of the first main surface is 1×104 cm⁻² or less, and an averaged dislocation density measured by a room-temperature cathode luminescence method in an arbi-trary selected square region sizing 250 µm×250 µm in the first main surface is 1×106 cm⁻² or less.
A gallium nitride substrate according to claim 1, wherein the dislocation density is 10 cm⁻² or less.
A gallium nitride substrate according to claim 1, wherein the averaged dislocation density is 1×104 cm⁻² or less.
A gallium nitride substrate according to claim 1, wherein an area of the first main surface is 1.0 cm2 or more.
A gallium nitride substrate according to claim 1, wherein a stacking fault density in the first main surface is 10 cm⁻¹ or less.
A gallium nitride substrate according to claim 1, wherein the first main surface is an M-plane.
A gallium nitride substrate according to claim 1, wherein the first main surface has a normal vector of which is tilted from <10-10> direction to c-axis direc-tion, and the normal vector is between <10-11> direction and <10-1-1> direction.
A method for manufacturing a nitride semiconductor crystal, comprising: growing a nitride semiconductor crystal on the first main surface of the gallium nitride substrate according to claim 1.
Layer stacks claimed or described, ordered top of device to substrate.
non-polar or semi-polar GaN substrate
semiconductor light-emitting device
Materials described outside the worked examples.
gallium nitride (GaN) substrate
GaN
nitride semiconductor crystal
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4, a plate-like GaN crystal of which thickness direction is the m-axis direction is grown from the opening of the mask pattern. The secondary substrate …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
averaged dislocation density over whole first main surface (cathode luminescence, room temperature) | ≤ 10000 cm⁻² | GaN |
averaged dislocation density in arbitrary 250 µm × 250 µm square region (cathode luminescence, room temperature) |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 19
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,670,687 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A and 1B, the substrate 1 has two main surfaces 11 parallel to each other and an edge surface 12. Chamfering can be performed, as necessary, for …
FIG. 2. The crystal growth apparatus 2 depicted in
FIG. 3. In the crystal growth apparatus 3 depicted in
FIG. 4, a plate-like GaN crystal of which thickness direction is the m-axis direction is grown from the opening of the mask pattern. The secondary substrate …
FIG. 5, the heating rate is constant from the heating step to the initial growth step. In the example of
FIG. 6, between the heating step and the initial growth step, the temperature keeping step of keeping the substrate tem- perature constant is provided. The …
FIG. 7, the heating rate is changed at the early and later stages of the initial growth step. In this example, the heating rate is changed discontinuously, but …
FIG. 8 is a cross-sectional view, and the semiconductor light- emitting device 40A has a semiconductor laminate L grown 65 on the main surface of the GaN …
FIG. 9 having a negative electrode 46 on the backside of the GaN substrate 41, the lowering effect of the operating voltage due to the increased carrier …
FIG. 10 is a schematic diagram for explaining a structure of a GaN layer bonded substrate.
FIG. 11 is a cross-sectional view depicting two seed substrates arranged on a susceptor. MODE FOR CARRYING OUT THE INVENTION The surface of a nitride …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, wherein the first main surface is a non-polar or semi-polar plane, a dislocation density measured by a room-temperature cathode luminescence method averaged over a whole of the first main surface is 1×104 cm⁻² or less, and an averaged dislocation density measured by a room-temperature cathode luminescence method in an arbi-trary selected square region sizing 250 µm×250 µm in the first main surface is 1×106 cm⁻² or less.
A gallium nitride substrate according to claim 1, wherein the dislocation density is 10 cm⁻² or less.
A gallium nitride substrate according to claim 1, wherein the averaged dislocation density is 1×104 cm⁻² or less.
A gallium nitride substrate according to claim 1, wherein an area of the first main surface is 1.0 cm2 or more.
A gallium nitride substrate according to claim 1, wherein a stacking fault density in the first main surface is 10 cm⁻¹ or less.
A gallium nitride substrate according to claim 1, wherein the first main surface is an M-plane.
A gallium nitride substrate according to claim 1, wherein the first main surface has a normal vector of which is tilted from <10-10> direction to c-axis direc-tion, and the normal vector is between <10-11> direction and <10-1-1> direction.
A method for manufacturing a nitride semiconductor crystal, comprising: growing a nitride semiconductor crystal on the first main surface of the gallium nitride substrate according to claim 1.
Layer stacks claimed or described, ordered top of device to substrate.
non-polar or semi-polar GaN substrate
semiconductor light-emitting device
Materials described outside the worked examples.
gallium nitride (GaN) substrate
GaN
nitride semiconductor crystal
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4, a plate-like GaN crystal of which thickness direction is the m-axis direction is grown from the opening of the mask pattern. The secondary substrate …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
averaged dislocation density over whole first main surface (cathode luminescence, room temperature) | ≤ 10000 cm⁻² | GaN |
averaged dislocation density in arbitrary 250 µm × 250 µm square region (cathode luminescence, room temperature) |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 19
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,670,687 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A and 1B, the substrate 1 has two main surfaces 11 parallel to each other and an edge surface 12. Chamfering can be performed, as necessary, for …
FIG. 2. The crystal growth apparatus 2 depicted in
FIG. 3. In the crystal growth apparatus 3 depicted in
FIG. 4, a plate-like GaN crystal of which thickness direction is the m-axis direction is grown from the opening of the mask pattern. The secondary substrate …
FIG. 5, the heating rate is constant from the heating step to the initial growth step. In the example of
FIG. 6, between the heating step and the initial growth step, the temperature keeping step of keeping the substrate tem- perature constant is provided. The …
FIG. 7, the heating rate is changed at the early and later stages of the initial growth step. In this example, the heating rate is changed discontinuously, but …
FIG. 8 is a cross-sectional view, and the semiconductor light- emitting device 40A has a semiconductor laminate L grown 65 on the main surface of the GaN …
FIG. 9 having a negative electrode 46 on the backside of the GaN substrate 41, the lowering effect of the operating voltage due to the increased carrier …
FIG. 10 is a schematic diagram for explaining a structure of a GaN layer bonded substrate.
FIG. 11 is a cross-sectional view depicting two seed substrates arranged on a susceptor. MODE FOR CARRYING OUT THE INVENTION The surface of a nitride …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, wherein the first main surface is a non-polar or semi-polar plane, a dislocation density measured by a room-temperature cathode luminescence method averaged over a whole of the first main surface is 1×104 cm⁻² or less, and an averaged dislocation density measured by a room-temperature cathode luminescence method in an arbi-trary selected square region sizing 250 µm×250 µm in the first main surface is 1×106 cm⁻² or less.
A gallium nitride substrate according to claim 1, wherein the dislocation density is 10 cm⁻² or less.
A gallium nitride substrate according to claim 1, wherein the averaged dislocation density is 1×104 cm⁻² or less.
A gallium nitride substrate according to claim 1, wherein an area of the first main surface is 1.0 cm2 or more.
A gallium nitride substrate according to claim 1, wherein a stacking fault density in the first main surface is 10 cm⁻¹ or less.
A gallium nitride substrate according to claim 1, wherein the first main surface is an M-plane.
A gallium nitride substrate according to claim 1, wherein the first main surface has a normal vector of which is tilted from <10-10> direction to c-axis direc-tion, and the normal vector is between <10-11> direction and <10-1-1> direction.
A method for manufacturing a nitride semiconductor crystal, comprising: growing a nitride semiconductor crystal on the first main surface of the gallium nitride substrate according to claim 1.
Layer stacks claimed or described, ordered top of device to substrate.
non-polar or semi-polar GaN substrate
semiconductor light-emitting device
Materials described outside the worked examples.
gallium nitride (GaN) substrate
GaN
nitride semiconductor crystal
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4, a plate-like GaN crystal of which thickness direction is the m-axis direction is grown from the opening of the mask pattern. The secondary substrate …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
averaged dislocation density over whole first main surface (cathode luminescence, room temperature) | ≤ 10000 cm⁻² | GaN |
averaged dislocation density in arbitrary 250 µm × 250 µm square region (cathode luminescence, room temperature) |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 19
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,670,687 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A and 1B, the substrate 1 has two main surfaces 11 parallel to each other and an edge surface 12. Chamfering can be performed, as necessary, for …
FIG. 2. The crystal growth apparatus 2 depicted in
FIG. 3. In the crystal growth apparatus 3 depicted in
FIG. 4, a plate-like GaN crystal of which thickness direction is the m-axis direction is grown from the opening of the mask pattern. The secondary substrate …
FIG. 5, the heating rate is constant from the heating step to the initial growth step. In the example of
FIG. 6, between the heating step and the initial growth step, the temperature keeping step of keeping the substrate tem- perature constant is provided. The …
FIG. 7, the heating rate is changed at the early and later stages of the initial growth step. In this example, the heating rate is changed discontinuously, but …
FIG. 8 is a cross-sectional view, and the semiconductor light- emitting device 40A has a semiconductor laminate L grown 65 on the main surface of the GaN …
FIG. 9 having a negative electrode 46 on the backside of the GaN substrate 41, the lowering effect of the operating voltage due to the increased carrier …
FIG. 10 is a schematic diagram for explaining a structure of a GaN layer bonded substrate.
FIG. 11 is a cross-sectional view depicting two seed substrates arranged on a susceptor. MODE FOR CARRYING OUT THE INVENTION The surface of a nitride …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, wherein the first main surface is a non-polar or semi-polar plane, a dislocation density measured by a room-temperature cathode luminescence method averaged over a whole of the first main surface is 1×104 cm⁻² or less, and an averaged dislocation density measured by a room-temperature cathode luminescence method in an arbi-trary selected square region sizing 250 µm×250 µm in the first main surface is 1×106 cm⁻² or less.
A gallium nitride substrate according to claim 1, wherein the dislocation density is 10 cm⁻² or less.
A gallium nitride substrate according to claim 1, wherein the averaged dislocation density is 1×104 cm⁻² or less.
A gallium nitride substrate according to claim 1, wherein an area of the first main surface is 1.0 cm2 or more.
A gallium nitride substrate according to claim 1, wherein a stacking fault density in the first main surface is 10 cm⁻¹ or less.
A gallium nitride substrate according to claim 1, wherein the first main surface is an M-plane.
A gallium nitride substrate according to claim 1, wherein the first main surface has a normal vector of which is tilted from <10-10> direction to c-axis direc-tion, and the normal vector is between <10-11> direction and <10-1-1> direction.
A method for manufacturing a nitride semiconductor crystal, comprising: growing a nitride semiconductor crystal on the first main surface of the gallium nitride substrate according to claim 1.
Layer stacks claimed or described, ordered top of device to substrate.
non-polar or semi-polar GaN substrate
semiconductor light-emitting device
Materials described outside the worked examples.
gallium nitride (GaN) substrate
GaN
nitride semiconductor crystal
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4, a plate-like GaN crystal of which thickness direction is the m-axis direction is grown from the opening of the mask pattern. The secondary substrate …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
averaged dislocation density over whole first main surface (cathode luminescence, room temperature) | ≤ 10000 cm⁻² | GaN |
averaged dislocation density in arbitrary 250 µm × 250 µm square region (cathode luminescence, room temperature) |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 19
Related documents with shared materials, methods, properties, or citations.
FIG. 6, between the heating step and the initial growth step, the temperature keeping step of keeping the substrate tem- perature constant is provided. The …
GaN |
stacking fault density in first main surface | ≤ 10 cm⁻¹ | GaN |
dislocation density (whole surface)-tighter limit from claim 2 | ≤ 10 cm⁻² | GaN |
averaged dislocation density in 250 µm × 250 µm region-tighter limit from claim 3 | ≤ 10000 cm⁻² | GaN |
stacking fault density (second aspect, M-plane substrate with high carrier density) | ≤ 100 cm⁻¹ | GaN |
carrier density (second aspect GaN substrate, M-plane) | ≥ 3000000000000000000 cm⁻³ | GaN |
oxygen concentration (second aspect GaN substrate) | ≥ 4000000000000000000 cm⁻³ | GaN |
Cited non-patent literature · 2
FIG. 6, between the heating step and the initial growth step, the temperature keeping step of keeping the substrate tem- perature constant is provided. The …
GaN |
stacking fault density in first main surface | ≤ 10 cm⁻¹ | GaN |
dislocation density (whole surface)-tighter limit from claim 2 | ≤ 10 cm⁻² | GaN |
averaged dislocation density in 250 µm × 250 µm region-tighter limit from claim 3 | ≤ 10000 cm⁻² | GaN |
stacking fault density (second aspect, M-plane substrate with high carrier density) | ≤ 100 cm⁻¹ | GaN |
carrier density (second aspect GaN substrate, M-plane) | ≥ 3000000000000000000 cm⁻³ | GaN |
oxygen concentration (second aspect GaN substrate) | ≥ 4000000000000000000 cm⁻³ | GaN |
Cited non-patent literature · 2
FIG. 6, between the heating step and the initial growth step, the temperature keeping step of keeping the substrate tem- perature constant is provided. The …
GaN |
stacking fault density in first main surface | ≤ 10 cm⁻¹ | GaN |
dislocation density (whole surface)-tighter limit from claim 2 | ≤ 10 cm⁻² | GaN |
averaged dislocation density in 250 µm × 250 µm region-tighter limit from claim 3 | ≤ 10000 cm⁻² | GaN |
stacking fault density (second aspect, M-plane substrate with high carrier density) | ≤ 100 cm⁻¹ | GaN |
carrier density (second aspect GaN substrate, M-plane) | ≥ 3000000000000000000 cm⁻³ | GaN |
oxygen concentration (second aspect GaN substrate) | ≥ 4000000000000000000 cm⁻³ | GaN |
Cited non-patent literature · 2
FIG. 6, between the heating step and the initial growth step, the temperature keeping step of keeping the substrate tem- perature constant is provided. The …
GaN |
stacking fault density in first main surface | ≤ 10 cm⁻¹ | GaN |
dislocation density (whole surface)-tighter limit from claim 2 | ≤ 10 cm⁻² | GaN |
averaged dislocation density in 250 µm × 250 µm region-tighter limit from claim 3 | ≤ 10000 cm⁻² | GaN |
stacking fault density (second aspect, M-plane substrate with high carrier density) | ≤ 100 cm⁻¹ | GaN |
carrier density (second aspect GaN substrate, M-plane) | ≥ 3000000000000000000 cm⁻³ | GaN |
oxygen concentration (second aspect GaN substrate) | ≥ 4000000000000000000 cm⁻³ | GaN |
Cited non-patent literature · 2
