Patent
US 10,892,333METHOD OF MAKING A GALLIUM NITRIDE DEVICE
Stephen W. Bedell
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,892,333Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1-25, embodiments of a method 100, 200 of making gallium nitride (GaN) devices are disclosed. The methods 100, 200 may be advantageously used to make …
FIG. 2 is a cross-sectional illustration of an embodiment of forming a plurality of spaced- apart first metal contacts according to a first embodiment of a …
FIG. 3 is a cross-sectional illustration of an embodiment of forming a layer of insulating GaN according to a first embodiment of a method of making a GaN …
FIG. 4 after forming 125 a handle substrate 26 on the stressor layer 22. The handle substrate 26 employed in the present disclosure comprises any flexible …
FIG. 5 after spalling 130 in which a spalled portion 28 of the GaN substrate is removed from the initial GaN substrate 2 as the layer of GaN 30 having a …
FIG. 6 is a cross-sectional illustration of an embodiment of spalling the GaN substrate according to a first embodiment of a method of making a GaN device; …
FIG. 7. Etching 280 may be employed to remove damage in the microstructure of the GaN layer 30 proximate the stressor layer second surface 32 resulting from …
FIG. 8 is a cross-sectional illustration of an embodiment of forming a plurality of channels in the insulating GaN layer according to a first embodiment of a …
FIG. 9 is a cross-sectional illustration of an embodiment of removing the exposed portions of the layer of insulating GaN to electrically isolate the device …
FIG. 10 is a cross-sectional illustration of an embodiment of forming an ohmic contact layer on the stressor layer second surface according to a first …
FIG. 11. Forming 175 the layer of insulating GaN 52 on the opposing sidewal ls 40 may be performed using the methods described herein for forming the layer of …
FIG. 12 is a cross-sectional illustration of an embodiment of forming a GaN substrate according to a second embodiment of a method of making a GaN device; …
FIG. 13 is a cross-sectional illustration of an embodiment of forming a plurality of spaced-apart first metal contacts according to a second embodiment of a …
FIG. 14 is a cross-sectional illustration of an embodiment of forming a plurality of channels in the insulating GaN layer according to a second embodiment of a …
FIG. 15 is a cross-sectional illustration of an embodiment of forming a metal layer on the contacts, the exposed portions of the upper surface and the first …
FIG. 16 is a cross-sectional illustration of an embodiment of forming a stressor layer according to a second embodiment of a method of making a GaN device; …
FIG. 17 is a cross-sectional illustration of an embodiment of forming a handle substrate according to a second embodiment of a method of making a GaN device; …
FIG. 18 is a cross-sectional illustration of an embodiment of spalling the GaN substrate according to a second embodiment of a method of making a GaN device; …
FIG. 19 is a cross-sectional illustration of an embodiment of bonding the first surface of the stressor layer to a thermally conductive substrate according to a …
FIG. 20. Forming the layer of insulating GaN 52 on the opposing sidewal ls 40 may be performed using the methods described herein for forming the layer of …
FIG. 21 is a cross-sectional illustration of an embodiment of removing the metal layer in and under the first channels to the stressor layer to electrically …
FIG. 22 is a cross-sectional illustration of an embodiment of forming an ohmic contact layer on the stressor layer second surface according to a second …
FIG. 23 is a cross-sectional illustration of an embodiment of forming a plurality of second metal contacts on the ohmic contact layer according to a second …
FIG. 24 is a cross-sectional illustration of an embodiment that optionally includes oxidizing the portions of the metal layer under the first channels between …
FIG. 25 is a cross-sectional illustration of another alternate embodiment. DETAILED DESCRIPTION [0035] To achieve these and other advantages, and in accordance …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a stressed layer; a conductive metal layer positioned on the stressed layer; contacts separately positioned on the conductive metal layer, the conductive metal layer being on at least a portion of sides of the contacts; a substrate positioned on the contacts such that an insulating layer is arranged on portions of the substrate proximate to the contacts; and an oxide region arranged adjacent to the contacts so as to provide a separation between the contacts. Currently amended
The device of claim 1, further comprising a cavity partially defined by the oxide region. Original
The device of claim 1, wherein the oxide region includes T iOx. Original
The device of claim 1, wherein the insulating layer includes GaN. Original
The device of claim 1, wherein the contacts are selected from the group consisting of Ag, Au, Pd, Pt, Ni, W, and Cr. Original
The device of claim 1, wherein the contacts are selected from the group consisting of Nb, Al, Ta, Cu, Mg, and Mo. Original
The device of claim 1, wherein the conductive metal layer is an adhesion promoting metal. Original
The device of claim 1, wherein the conductive metal layer is selected from the group consisting of Ti, Cr, Ta, W, Cu, Pt, Al, Au, and Ni. Original
Layer stacks claimed or described, ordered top of device to substrate.
GaN semiconductor device
Materials described outside the worked examples.
stressed layer
insulating GaN
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1-25, embodiments of a method 100, 200 of making gallium nitride (GaN) devices are disclosed. The methods 100, 200 may be advantageously used to make …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 20–60 °C | — |
Thickness | 5–1000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,892,333Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1-25, embodiments of a method 100, 200 of making gallium nitride (GaN) devices are disclosed. The methods 100, 200 may be advantageously used to make …
FIG. 2 is a cross-sectional illustration of an embodiment of forming a plurality of spaced- apart first metal contacts according to a first embodiment of a …
FIG. 3 is a cross-sectional illustration of an embodiment of forming a layer of insulating GaN according to a first embodiment of a method of making a GaN …
FIG. 4 after forming 125 a handle substrate 26 on the stressor layer 22. The handle substrate 26 employed in the present disclosure comprises any flexible …
FIG. 5 after spalling 130 in which a spalled portion 28 of the GaN substrate is removed from the initial GaN substrate 2 as the layer of GaN 30 having a …
FIG. 6 is a cross-sectional illustration of an embodiment of spalling the GaN substrate according to a first embodiment of a method of making a GaN device; …
FIG. 7. Etching 280 may be employed to remove damage in the microstructure of the GaN layer 30 proximate the stressor layer second surface 32 resulting from …
FIG. 8 is a cross-sectional illustration of an embodiment of forming a plurality of channels in the insulating GaN layer according to a first embodiment of a …
FIG. 9 is a cross-sectional illustration of an embodiment of removing the exposed portions of the layer of insulating GaN to electrically isolate the device …
FIG. 10 is a cross-sectional illustration of an embodiment of forming an ohmic contact layer on the stressor layer second surface according to a first …
FIG. 11. Forming 175 the layer of insulating GaN 52 on the opposing sidewal ls 40 may be performed using the methods described herein for forming the layer of …
FIG. 12 is a cross-sectional illustration of an embodiment of forming a GaN substrate according to a second embodiment of a method of making a GaN device; …
FIG. 13 is a cross-sectional illustration of an embodiment of forming a plurality of spaced-apart first metal contacts according to a second embodiment of a …
FIG. 14 is a cross-sectional illustration of an embodiment of forming a plurality of channels in the insulating GaN layer according to a second embodiment of a …
FIG. 15 is a cross-sectional illustration of an embodiment of forming a metal layer on the contacts, the exposed portions of the upper surface and the first …
FIG. 16 is a cross-sectional illustration of an embodiment of forming a stressor layer according to a second embodiment of a method of making a GaN device; …
FIG. 17 is a cross-sectional illustration of an embodiment of forming a handle substrate according to a second embodiment of a method of making a GaN device; …
FIG. 18 is a cross-sectional illustration of an embodiment of spalling the GaN substrate according to a second embodiment of a method of making a GaN device; …
FIG. 19 is a cross-sectional illustration of an embodiment of bonding the first surface of the stressor layer to a thermally conductive substrate according to a …
FIG. 20. Forming the layer of insulating GaN 52 on the opposing sidewal ls 40 may be performed using the methods described herein for forming the layer of …
FIG. 21 is a cross-sectional illustration of an embodiment of removing the metal layer in and under the first channels to the stressor layer to electrically …
FIG. 22 is a cross-sectional illustration of an embodiment of forming an ohmic contact layer on the stressor layer second surface according to a second …
FIG. 23 is a cross-sectional illustration of an embodiment of forming a plurality of second metal contacts on the ohmic contact layer according to a second …
FIG. 24 is a cross-sectional illustration of an embodiment that optionally includes oxidizing the portions of the metal layer under the first channels between …
FIG. 25 is a cross-sectional illustration of another alternate embodiment. DETAILED DESCRIPTION [0035] To achieve these and other advantages, and in accordance …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a stressed layer; a conductive metal layer positioned on the stressed layer; contacts separately positioned on the conductive metal layer, the conductive metal layer being on at least a portion of sides of the contacts; a substrate positioned on the contacts such that an insulating layer is arranged on portions of the substrate proximate to the contacts; and an oxide region arranged adjacent to the contacts so as to provide a separation between the contacts. Currently amended
The device of claim 1, further comprising a cavity partially defined by the oxide region. Original
The device of claim 1, wherein the oxide region includes T iOx. Original
The device of claim 1, wherein the insulating layer includes GaN. Original
The device of claim 1, wherein the contacts are selected from the group consisting of Ag, Au, Pd, Pt, Ni, W, and Cr. Original
The device of claim 1, wherein the contacts are selected from the group consisting of Nb, Al, Ta, Cu, Mg, and Mo. Original
The device of claim 1, wherein the conductive metal layer is an adhesion promoting metal. Original
The device of claim 1, wherein the conductive metal layer is selected from the group consisting of Ti, Cr, Ta, W, Cu, Pt, Al, Au, and Ni. Original
Layer stacks claimed or described, ordered top of device to substrate.
GaN semiconductor device
Materials described outside the worked examples.
stressed layer
insulating GaN
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1-25, embodiments of a method 100, 200 of making gallium nitride (GaN) devices are disclosed. The methods 100, 200 may be advantageously used to make …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 20–60 °C | — |
Thickness | 5–1000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,892,333Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1-25, embodiments of a method 100, 200 of making gallium nitride (GaN) devices are disclosed. The methods 100, 200 may be advantageously used to make …
FIG. 2 is a cross-sectional illustration of an embodiment of forming a plurality of spaced- apart first metal contacts according to a first embodiment of a …
FIG. 3 is a cross-sectional illustration of an embodiment of forming a layer of insulating GaN according to a first embodiment of a method of making a GaN …
FIG. 4 after forming 125 a handle substrate 26 on the stressor layer 22. The handle substrate 26 employed in the present disclosure comprises any flexible …
FIG. 5 after spalling 130 in which a spalled portion 28 of the GaN substrate is removed from the initial GaN substrate 2 as the layer of GaN 30 having a …
FIG. 6 is a cross-sectional illustration of an embodiment of spalling the GaN substrate according to a first embodiment of a method of making a GaN device; …
FIG. 7. Etching 280 may be employed to remove damage in the microstructure of the GaN layer 30 proximate the stressor layer second surface 32 resulting from …
FIG. 8 is a cross-sectional illustration of an embodiment of forming a plurality of channels in the insulating GaN layer according to a first embodiment of a …
FIG. 9 is a cross-sectional illustration of an embodiment of removing the exposed portions of the layer of insulating GaN to electrically isolate the device …
FIG. 10 is a cross-sectional illustration of an embodiment of forming an ohmic contact layer on the stressor layer second surface according to a first …
FIG. 11. Forming 175 the layer of insulating GaN 52 on the opposing sidewal ls 40 may be performed using the methods described herein for forming the layer of …
FIG. 12 is a cross-sectional illustration of an embodiment of forming a GaN substrate according to a second embodiment of a method of making a GaN device; …
FIG. 13 is a cross-sectional illustration of an embodiment of forming a plurality of spaced-apart first metal contacts according to a second embodiment of a …
FIG. 14 is a cross-sectional illustration of an embodiment of forming a plurality of channels in the insulating GaN layer according to a second embodiment of a …
FIG. 15 is a cross-sectional illustration of an embodiment of forming a metal layer on the contacts, the exposed portions of the upper surface and the first …
FIG. 16 is a cross-sectional illustration of an embodiment of forming a stressor layer according to a second embodiment of a method of making a GaN device; …
FIG. 17 is a cross-sectional illustration of an embodiment of forming a handle substrate according to a second embodiment of a method of making a GaN device; …
FIG. 18 is a cross-sectional illustration of an embodiment of spalling the GaN substrate according to a second embodiment of a method of making a GaN device; …
FIG. 19 is a cross-sectional illustration of an embodiment of bonding the first surface of the stressor layer to a thermally conductive substrate according to a …
FIG. 20. Forming the layer of insulating GaN 52 on the opposing sidewal ls 40 may be performed using the methods described herein for forming the layer of …
FIG. 21 is a cross-sectional illustration of an embodiment of removing the metal layer in and under the first channels to the stressor layer to electrically …
FIG. 22 is a cross-sectional illustration of an embodiment of forming an ohmic contact layer on the stressor layer second surface according to a second …
FIG. 23 is a cross-sectional illustration of an embodiment of forming a plurality of second metal contacts on the ohmic contact layer according to a second …
FIG. 24 is a cross-sectional illustration of an embodiment that optionally includes oxidizing the portions of the metal layer under the first channels between …
FIG. 25 is a cross-sectional illustration of another alternate embodiment. DETAILED DESCRIPTION [0035] To achieve these and other advantages, and in accordance …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a stressed layer; a conductive metal layer positioned on the stressed layer; contacts separately positioned on the conductive metal layer, the conductive metal layer being on at least a portion of sides of the contacts; a substrate positioned on the contacts such that an insulating layer is arranged on portions of the substrate proximate to the contacts; and an oxide region arranged adjacent to the contacts so as to provide a separation between the contacts. Currently amended
The device of claim 1, further comprising a cavity partially defined by the oxide region. Original
The device of claim 1, wherein the oxide region includes T iOx. Original
The device of claim 1, wherein the insulating layer includes GaN. Original
The device of claim 1, wherein the contacts are selected from the group consisting of Ag, Au, Pd, Pt, Ni, W, and Cr. Original
The device of claim 1, wherein the contacts are selected from the group consisting of Nb, Al, Ta, Cu, Mg, and Mo. Original
The device of claim 1, wherein the conductive metal layer is an adhesion promoting metal. Original
The device of claim 1, wherein the conductive metal layer is selected from the group consisting of Ti, Cr, Ta, W, Cu, Pt, Al, Au, and Ni. Original
Layer stacks claimed or described, ordered top of device to substrate.
GaN semiconductor device
Materials described outside the worked examples.
stressed layer
insulating GaN
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1-25, embodiments of a method 100, 200 of making gallium nitride (GaN) devices are disclosed. The methods 100, 200 may be advantageously used to make …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 20–60 °C | — |
Thickness | 5–1000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,892,333Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1-25, embodiments of a method 100, 200 of making gallium nitride (GaN) devices are disclosed. The methods 100, 200 may be advantageously used to make …
FIG. 2 is a cross-sectional illustration of an embodiment of forming a plurality of spaced- apart first metal contacts according to a first embodiment of a …
FIG. 3 is a cross-sectional illustration of an embodiment of forming a layer of insulating GaN according to a first embodiment of a method of making a GaN …
FIG. 4 after forming 125 a handle substrate 26 on the stressor layer 22. The handle substrate 26 employed in the present disclosure comprises any flexible …
FIG. 5 after spalling 130 in which a spalled portion 28 of the GaN substrate is removed from the initial GaN substrate 2 as the layer of GaN 30 having a …
FIG. 6 is a cross-sectional illustration of an embodiment of spalling the GaN substrate according to a first embodiment of a method of making a GaN device; …
FIG. 7. Etching 280 may be employed to remove damage in the microstructure of the GaN layer 30 proximate the stressor layer second surface 32 resulting from …
FIG. 8 is a cross-sectional illustration of an embodiment of forming a plurality of channels in the insulating GaN layer according to a first embodiment of a …
FIG. 9 is a cross-sectional illustration of an embodiment of removing the exposed portions of the layer of insulating GaN to electrically isolate the device …
FIG. 10 is a cross-sectional illustration of an embodiment of forming an ohmic contact layer on the stressor layer second surface according to a first …
FIG. 11. Forming 175 the layer of insulating GaN 52 on the opposing sidewal ls 40 may be performed using the methods described herein for forming the layer of …
FIG. 12 is a cross-sectional illustration of an embodiment of forming a GaN substrate according to a second embodiment of a method of making a GaN device; …
FIG. 13 is a cross-sectional illustration of an embodiment of forming a plurality of spaced-apart first metal contacts according to a second embodiment of a …
FIG. 14 is a cross-sectional illustration of an embodiment of forming a plurality of channels in the insulating GaN layer according to a second embodiment of a …
FIG. 15 is a cross-sectional illustration of an embodiment of forming a metal layer on the contacts, the exposed portions of the upper surface and the first …
FIG. 16 is a cross-sectional illustration of an embodiment of forming a stressor layer according to a second embodiment of a method of making a GaN device; …
FIG. 17 is a cross-sectional illustration of an embodiment of forming a handle substrate according to a second embodiment of a method of making a GaN device; …
FIG. 18 is a cross-sectional illustration of an embodiment of spalling the GaN substrate according to a second embodiment of a method of making a GaN device; …
FIG. 19 is a cross-sectional illustration of an embodiment of bonding the first surface of the stressor layer to a thermally conductive substrate according to a …
FIG. 20. Forming the layer of insulating GaN 52 on the opposing sidewal ls 40 may be performed using the methods described herein for forming the layer of …
FIG. 21 is a cross-sectional illustration of an embodiment of removing the metal layer in and under the first channels to the stressor layer to electrically …
FIG. 22 is a cross-sectional illustration of an embodiment of forming an ohmic contact layer on the stressor layer second surface according to a second …
FIG. 23 is a cross-sectional illustration of an embodiment of forming a plurality of second metal contacts on the ohmic contact layer according to a second …
FIG. 24 is a cross-sectional illustration of an embodiment that optionally includes oxidizing the portions of the metal layer under the first channels between …
FIG. 25 is a cross-sectional illustration of another alternate embodiment. DETAILED DESCRIPTION [0035] To achieve these and other advantages, and in accordance …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a stressed layer; a conductive metal layer positioned on the stressed layer; contacts separately positioned on the conductive metal layer, the conductive metal layer being on at least a portion of sides of the contacts; a substrate positioned on the contacts such that an insulating layer is arranged on portions of the substrate proximate to the contacts; and an oxide region arranged adjacent to the contacts so as to provide a separation between the contacts. Currently amended
The device of claim 1, further comprising a cavity partially defined by the oxide region. Original
The device of claim 1, wherein the oxide region includes T iOx. Original
The device of claim 1, wherein the insulating layer includes GaN. Original
The device of claim 1, wherein the contacts are selected from the group consisting of Ag, Au, Pd, Pt, Ni, W, and Cr. Original
The device of claim 1, wherein the contacts are selected from the group consisting of Nb, Al, Ta, Cu, Mg, and Mo. Original
The device of claim 1, wherein the conductive metal layer is an adhesion promoting metal. Original
The device of claim 1, wherein the conductive metal layer is selected from the group consisting of Ti, Cr, Ta, W, Cu, Pt, Al, Au, and Ni. Original
Layer stacks claimed or described, ordered top of device to substrate.
GaN semiconductor device
Materials described outside the worked examples.
stressed layer
insulating GaN
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1-25, embodiments of a method 100, 200 of making gallium nitride (GaN) devices are disclosed. The methods 100, 200 may be advantageously used to make …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 20–60 °C | — |
Thickness | 5–1000 nm |
Related documents with shared materials, methods, properties, or citations.
conductive metal layer
oxide region
TiOx
contact metals (Ag, Au, Pd, Pt, Ni, W, Cr)
contact metals (Nb, Al, Ta, Cu, Mg, Mo)
conductive metal layer (Ti, Cr, Ta, W, Cu, Pt, Al, Au, Ni)
thermally conductive substrate
FIG. 5 after spalling 130 in which a spalled portion 28 of the GaN substrate is removed from the initial GaN substrate 2 as the layer of GaN 30 having a …
FIG. 7. Etching 280 may be employed to remove damage in the microstructure of the GaN layer 30 proximate the stressor layer second surface 32 resulting from …
FIG. 9 is a cross-sectional illustration of an embodiment of removing the exposed portions of the layer of insulating GaN to electrically isolate the device …
FIG. 11. Forming 175 the layer of insulating GaN 52 on the opposing sidewal ls 40 may be performed using the methods described herein for forming the layer of …
FIG. 11. Forming 175 the layer of insulating GaN 52 on the opposing sidewal ls 40 may be performed using the methods described herein for forming the layer of …
FIG. 20. Forming the layer of insulating GaN 52 on the opposing sidewal ls 40 may be performed using the methods described herein for forming the layer of …
FIG. 21 is a cross-sectional illustration of an embodiment of removing the metal layer in and under the first channels to the stressor layer to electrically …
| — |
Thickness | 50–500 nm | — |
Thickness | 100–300 nm | — |
Thickness | 100–150 nm | — |
Temperature | 20–40 °C | — |
Thickness | 1–5 nm | — |
Thickness | 5–100 nm | — |
Thickness | 50–100 nm | — |
Thickness | 100–500 nm | — |
Temperature | 350–550 °C | — |
Thickness | ≤ 30 cm | — |
Temperature | ≤ 20 °C | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 50 µm | — |
Thickness | ≤ 30 µm | — |
conductive metal layer
oxide region
TiOx
contact metals (Ag, Au, Pd, Pt, Ni, W, Cr)
contact metals (Nb, Al, Ta, Cu, Mg, Mo)
conductive metal layer (Ti, Cr, Ta, W, Cu, Pt, Al, Au, Ni)
thermally conductive substrate
FIG. 5 after spalling 130 in which a spalled portion 28 of the GaN substrate is removed from the initial GaN substrate 2 as the layer of GaN 30 having a …
FIG. 7. Etching 280 may be employed to remove damage in the microstructure of the GaN layer 30 proximate the stressor layer second surface 32 resulting from …
FIG. 9 is a cross-sectional illustration of an embodiment of removing the exposed portions of the layer of insulating GaN to electrically isolate the device …
FIG. 11. Forming 175 the layer of insulating GaN 52 on the opposing sidewal ls 40 may be performed using the methods described herein for forming the layer of …
FIG. 11. Forming 175 the layer of insulating GaN 52 on the opposing sidewal ls 40 may be performed using the methods described herein for forming the layer of …
FIG. 20. Forming the layer of insulating GaN 52 on the opposing sidewal ls 40 may be performed using the methods described herein for forming the layer of …
FIG. 21 is a cross-sectional illustration of an embodiment of removing the metal layer in and under the first channels to the stressor layer to electrically …
| — |
Thickness | 50–500 nm | — |
Thickness | 100–300 nm | — |
Thickness | 100–150 nm | — |
Temperature | 20–40 °C | — |
Thickness | 1–5 nm | — |
Thickness | 5–100 nm | — |
Thickness | 50–100 nm | — |
Thickness | 100–500 nm | — |
Temperature | 350–550 °C | — |
Thickness | ≤ 30 cm | — |
Temperature | ≤ 20 °C | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 50 µm | — |
Thickness | ≤ 30 µm | — |
conductive metal layer
oxide region
TiOx
contact metals (Ag, Au, Pd, Pt, Ni, W, Cr)
contact metals (Nb, Al, Ta, Cu, Mg, Mo)
conductive metal layer (Ti, Cr, Ta, W, Cu, Pt, Al, Au, Ni)
thermally conductive substrate
FIG. 5 after spalling 130 in which a spalled portion 28 of the GaN substrate is removed from the initial GaN substrate 2 as the layer of GaN 30 having a …
FIG. 7. Etching 280 may be employed to remove damage in the microstructure of the GaN layer 30 proximate the stressor layer second surface 32 resulting from …
FIG. 9 is a cross-sectional illustration of an embodiment of removing the exposed portions of the layer of insulating GaN to electrically isolate the device …
FIG. 11. Forming 175 the layer of insulating GaN 52 on the opposing sidewal ls 40 may be performed using the methods described herein for forming the layer of …
FIG. 11. Forming 175 the layer of insulating GaN 52 on the opposing sidewal ls 40 may be performed using the methods described herein for forming the layer of …
FIG. 20. Forming the layer of insulating GaN 52 on the opposing sidewal ls 40 may be performed using the methods described herein for forming the layer of …
FIG. 21 is a cross-sectional illustration of an embodiment of removing the metal layer in and under the first channels to the stressor layer to electrically …
| — |
Thickness | 50–500 nm | — |
Thickness | 100–300 nm | — |
Thickness | 100–150 nm | — |
Temperature | 20–40 °C | — |
Thickness | 1–5 nm | — |
Thickness | 5–100 nm | — |
Thickness | 50–100 nm | — |
Thickness | 100–500 nm | — |
Temperature | 350–550 °C | — |
Thickness | ≤ 30 cm | — |
Temperature | ≤ 20 °C | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 50 µm | — |
Thickness | ≤ 30 µm | — |
conductive metal layer
oxide region
TiOx
contact metals (Ag, Au, Pd, Pt, Ni, W, Cr)
contact metals (Nb, Al, Ta, Cu, Mg, Mo)
conductive metal layer (Ti, Cr, Ta, W, Cu, Pt, Al, Au, Ni)
thermally conductive substrate
FIG. 5 after spalling 130 in which a spalled portion 28 of the GaN substrate is removed from the initial GaN substrate 2 as the layer of GaN 30 having a …
FIG. 7. Etching 280 may be employed to remove damage in the microstructure of the GaN layer 30 proximate the stressor layer second surface 32 resulting from …
FIG. 9 is a cross-sectional illustration of an embodiment of removing the exposed portions of the layer of insulating GaN to electrically isolate the device …
FIG. 11. Forming 175 the layer of insulating GaN 52 on the opposing sidewal ls 40 may be performed using the methods described herein for forming the layer of …
FIG. 11. Forming 175 the layer of insulating GaN 52 on the opposing sidewal ls 40 may be performed using the methods described herein for forming the layer of …
FIG. 20. Forming the layer of insulating GaN 52 on the opposing sidewal ls 40 may be performed using the methods described herein for forming the layer of …
FIG. 21 is a cross-sectional illustration of an embodiment of removing the metal layer in and under the first channels to the stressor layer to electrically …
| — |
Thickness | 50–500 nm | — |
Thickness | 100–300 nm | — |
Thickness | 100–150 nm | — |
Temperature | 20–40 °C | — |
Thickness | 1–5 nm | — |
Thickness | 5–100 nm | — |
Thickness | 50–100 nm | — |
Thickness | 100–500 nm | — |
Temperature | 350–550 °C | — |
Thickness | ≤ 30 cm | — |
Temperature | ≤ 20 °C | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 50 µm | — |
Thickness | ≤ 30 µm | — |