Patent
US 9,893,199Preparation method of reduced and N-doped graphene oxide and the reduced and N-doped graphene oxide thereby
Firoz Khan
US
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US 9,893,199Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic diagram illustrating an example of the transistor containing the reduced and N-doped graphene oxide prepared by the method of the present invention; 15
Figure 2 is a graph illustrating the C/O atomic ratio and the C/N atomic ratio according to the reaction temperature of the reduced and N-doped graphene oxides of prepared in Examples 1 ~ 5 and Comparative Examples 1 ~ 5 and the conventional 20 graphene oxide;
Figure 3 is a graph illustrating the atomic percentage of graphitic C and oxidized C in the reduced and N-doped graphene oxides prepared in Example 1 ~ 5;
Figure 4 is a graph illustrating the result of X- ray diffraction analysis performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6 and the conventional graphene oxide; 5
Figure 5 is a graph illustrating the result of Raman spectroscopy performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6;
Figure 6 is a graph illustrating the result of X- 10 ray photoelectron spectroscopy performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6;
Figure 7 is a graph illustrating the I D/IG rati o of the 15 reduced and N-doped graphene oxides prepared in Examples 5 and 6 and the conventional graphene oxide; and
Figure 8 and
Figure 9 are graphs illustrating the performance of the field effect transistors prepared in Examples 7 and 8.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing reduced and N-doped graphene oxide, comprising: preparing a mixed solution containing graphen e oxide (G O) and tetra m ethylammonium hydroxide (TMA H); wherein the weight ratio of tetra methylam monium hydroxide/graphene oxide in the mixed solution is 0.0000 1 ~ 0.5; and heating the mixed solution at a tem perature of 60-75 0 C z thereby producing the reduced and N-dop e d graphene oxide. Currently amended
The preparation m et hod of claim 1, wherein the mixed solution can additionally include one or more solvents s elect ed fro m the group consisting of: water, ethanol, dimethylformamide (DMF), dimethylsul fo xide (DMSO), tetrahydrofuran (THF), and acetone. Previously presented
The preparation m et hod of claim 1, wherein the mixed solution does not include a dispersing agent. Previously presented
The prepara t ion method of claim 1, wherein heating is performed for 1 6 hours. Previously presented
The preparation method of claim 1, wherein heating is performed with stirring at a stirring speed of 100 1000 rpm. Previously presented
A reduced and N-doped graphene oxide prepared by the method of claim 1, having a carbon/oxygen atomic ratio of 2.3-8.5 and a carbon/nitrogen atomic ratio of 10 ~ 20. Previously presented
A transistor which is located on top of the reduced and N-doped graphene oxide prepared by the method of claim 1 in the structure composed of a gate electrode; a gate insulator on top of the gate electrode; a semiconductor oxide on top of the gate insulator; and the reduced and N-doped graphene oxide on top of the semiconductor oxide, and contains a source electrode and a drain electrode facing each other. Withdrawn
The preparation method of claim 1, thereby producing a reduced and N-doped graphene oxide having a carbon/oxygen atomic ratio of 2.3-8.5 and a carbon/nitrogen atomic ratio of 10 -
Canceled
Canceled
New
Layer stacks claimed or described, ordered top of device to substrate.
transistor
Materials described outside the worked examples.
graphene oxide
tetramethylammonium hydroxide
(CH₃)4NOH
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 is a schematic diagram illustrating an example of the transistor containing the reduced and N-doped graphene oxide prepared by the method of the present invention; 15
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
C/O atomic ratio range (claim 8) | 2.3–8.5 atomic ratio | reduced and N-doped graphene oxide |
C/N atomic ratio range (claim 8) | 10–20 atomic ratio |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,893,199Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic diagram illustrating an example of the transistor containing the reduced and N-doped graphene oxide prepared by the method of the present invention; 15
Figure 2 is a graph illustrating the C/O atomic ratio and the C/N atomic ratio according to the reaction temperature of the reduced and N-doped graphene oxides of prepared in Examples 1 ~ 5 and Comparative Examples 1 ~ 5 and the conventional 20 graphene oxide;
Figure 3 is a graph illustrating the atomic percentage of graphitic C and oxidized C in the reduced and N-doped graphene oxides prepared in Example 1 ~ 5;
Figure 4 is a graph illustrating the result of X- ray diffraction analysis performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6 and the conventional graphene oxide; 5
Figure 5 is a graph illustrating the result of Raman spectroscopy performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6;
Figure 6 is a graph illustrating the result of X- 10 ray photoelectron spectroscopy performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6;
Figure 7 is a graph illustrating the I D/IG rati o of the 15 reduced and N-doped graphene oxides prepared in Examples 5 and 6 and the conventional graphene oxide; and
Figure 8 and
Figure 9 are graphs illustrating the performance of the field effect transistors prepared in Examples 7 and 8.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing reduced and N-doped graphene oxide, comprising: preparing a mixed solution containing graphen e oxide (G O) and tetra m ethylammonium hydroxide (TMA H); wherein the weight ratio of tetra methylam monium hydroxide/graphene oxide in the mixed solution is 0.0000 1 ~ 0.5; and heating the mixed solution at a tem perature of 60-75 0 C z thereby producing the reduced and N-dop e d graphene oxide. Currently amended
The preparation m et hod of claim 1, wherein the mixed solution can additionally include one or more solvents s elect ed fro m the group consisting of: water, ethanol, dimethylformamide (DMF), dimethylsul fo xide (DMSO), tetrahydrofuran (THF), and acetone. Previously presented
The preparation m et hod of claim 1, wherein the mixed solution does not include a dispersing agent. Previously presented
The prepara t ion method of claim 1, wherein heating is performed for 1 6 hours. Previously presented
The preparation method of claim 1, wherein heating is performed with stirring at a stirring speed of 100 1000 rpm. Previously presented
A reduced and N-doped graphene oxide prepared by the method of claim 1, having a carbon/oxygen atomic ratio of 2.3-8.5 and a carbon/nitrogen atomic ratio of 10 ~ 20. Previously presented
A transistor which is located on top of the reduced and N-doped graphene oxide prepared by the method of claim 1 in the structure composed of a gate electrode; a gate insulator on top of the gate electrode; a semiconductor oxide on top of the gate insulator; and the reduced and N-doped graphene oxide on top of the semiconductor oxide, and contains a source electrode and a drain electrode facing each other. Withdrawn
The preparation method of claim 1, thereby producing a reduced and N-doped graphene oxide having a carbon/oxygen atomic ratio of 2.3-8.5 and a carbon/nitrogen atomic ratio of 10 -
Canceled
Canceled
New
Layer stacks claimed or described, ordered top of device to substrate.
transistor
Materials described outside the worked examples.
graphene oxide
tetramethylammonium hydroxide
(CH₃)4NOH
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 is a schematic diagram illustrating an example of the transistor containing the reduced and N-doped graphene oxide prepared by the method of the present invention; 15
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
C/O atomic ratio range (claim 8) | 2.3–8.5 atomic ratio | reduced and N-doped graphene oxide |
C/N atomic ratio range (claim 8) | 10–20 atomic ratio |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,893,199Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic diagram illustrating an example of the transistor containing the reduced and N-doped graphene oxide prepared by the method of the present invention; 15
Figure 2 is a graph illustrating the C/O atomic ratio and the C/N atomic ratio according to the reaction temperature of the reduced and N-doped graphene oxides of prepared in Examples 1 ~ 5 and Comparative Examples 1 ~ 5 and the conventional 20 graphene oxide;
Figure 3 is a graph illustrating the atomic percentage of graphitic C and oxidized C in the reduced and N-doped graphene oxides prepared in Example 1 ~ 5;
Figure 4 is a graph illustrating the result of X- ray diffraction analysis performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6 and the conventional graphene oxide; 5
Figure 5 is a graph illustrating the result of Raman spectroscopy performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6;
Figure 6 is a graph illustrating the result of X- 10 ray photoelectron spectroscopy performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6;
Figure 7 is a graph illustrating the I D/IG rati o of the 15 reduced and N-doped graphene oxides prepared in Examples 5 and 6 and the conventional graphene oxide; and
Figure 8 and
Figure 9 are graphs illustrating the performance of the field effect transistors prepared in Examples 7 and 8.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing reduced and N-doped graphene oxide, comprising: preparing a mixed solution containing graphen e oxide (G O) and tetra m ethylammonium hydroxide (TMA H); wherein the weight ratio of tetra methylam monium hydroxide/graphene oxide in the mixed solution is 0.0000 1 ~ 0.5; and heating the mixed solution at a tem perature of 60-75 0 C z thereby producing the reduced and N-dop e d graphene oxide. Currently amended
The preparation m et hod of claim 1, wherein the mixed solution can additionally include one or more solvents s elect ed fro m the group consisting of: water, ethanol, dimethylformamide (DMF), dimethylsul fo xide (DMSO), tetrahydrofuran (THF), and acetone. Previously presented
The preparation m et hod of claim 1, wherein the mixed solution does not include a dispersing agent. Previously presented
The prepara t ion method of claim 1, wherein heating is performed for 1 6 hours. Previously presented
The preparation method of claim 1, wherein heating is performed with stirring at a stirring speed of 100 1000 rpm. Previously presented
A reduced and N-doped graphene oxide prepared by the method of claim 1, having a carbon/oxygen atomic ratio of 2.3-8.5 and a carbon/nitrogen atomic ratio of 10 ~ 20. Previously presented
A transistor which is located on top of the reduced and N-doped graphene oxide prepared by the method of claim 1 in the structure composed of a gate electrode; a gate insulator on top of the gate electrode; a semiconductor oxide on top of the gate insulator; and the reduced and N-doped graphene oxide on top of the semiconductor oxide, and contains a source electrode and a drain electrode facing each other. Withdrawn
The preparation method of claim 1, thereby producing a reduced and N-doped graphene oxide having a carbon/oxygen atomic ratio of 2.3-8.5 and a carbon/nitrogen atomic ratio of 10 -
Canceled
Canceled
New
Layer stacks claimed or described, ordered top of device to substrate.
transistor
Materials described outside the worked examples.
graphene oxide
tetramethylammonium hydroxide
(CH₃)4NOH
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 is a schematic diagram illustrating an example of the transistor containing the reduced and N-doped graphene oxide prepared by the method of the present invention; 15
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
C/O atomic ratio range (claim 8) | 2.3–8.5 atomic ratio | reduced and N-doped graphene oxide |
C/N atomic ratio range (claim 8) | 10–20 atomic ratio |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,893,199Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic diagram illustrating an example of the transistor containing the reduced and N-doped graphene oxide prepared by the method of the present invention; 15
Figure 2 is a graph illustrating the C/O atomic ratio and the C/N atomic ratio according to the reaction temperature of the reduced and N-doped graphene oxides of prepared in Examples 1 ~ 5 and Comparative Examples 1 ~ 5 and the conventional 20 graphene oxide;
Figure 3 is a graph illustrating the atomic percentage of graphitic C and oxidized C in the reduced and N-doped graphene oxides prepared in Example 1 ~ 5;
Figure 4 is a graph illustrating the result of X- ray diffraction analysis performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6 and the conventional graphene oxide; 5
Figure 5 is a graph illustrating the result of Raman spectroscopy performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6;
Figure 6 is a graph illustrating the result of X- 10 ray photoelectron spectroscopy performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6;
Figure 7 is a graph illustrating the I D/IG rati o of the 15 reduced and N-doped graphene oxides prepared in Examples 5 and 6 and the conventional graphene oxide; and
Figure 8 and
Figure 9 are graphs illustrating the performance of the field effect transistors prepared in Examples 7 and 8.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing reduced and N-doped graphene oxide, comprising: preparing a mixed solution containing graphen e oxide (G O) and tetra m ethylammonium hydroxide (TMA H); wherein the weight ratio of tetra methylam monium hydroxide/graphene oxide in the mixed solution is 0.0000 1 ~ 0.5; and heating the mixed solution at a tem perature of 60-75 0 C z thereby producing the reduced and N-dop e d graphene oxide. Currently amended
The preparation m et hod of claim 1, wherein the mixed solution can additionally include one or more solvents s elect ed fro m the group consisting of: water, ethanol, dimethylformamide (DMF), dimethylsul fo xide (DMSO), tetrahydrofuran (THF), and acetone. Previously presented
The preparation m et hod of claim 1, wherein the mixed solution does not include a dispersing agent. Previously presented
The prepara t ion method of claim 1, wherein heating is performed for 1 6 hours. Previously presented
The preparation method of claim 1, wherein heating is performed with stirring at a stirring speed of 100 1000 rpm. Previously presented
A reduced and N-doped graphene oxide prepared by the method of claim 1, having a carbon/oxygen atomic ratio of 2.3-8.5 and a carbon/nitrogen atomic ratio of 10 ~ 20. Previously presented
A transistor which is located on top of the reduced and N-doped graphene oxide prepared by the method of claim 1 in the structure composed of a gate electrode; a gate insulator on top of the gate electrode; a semiconductor oxide on top of the gate insulator; and the reduced and N-doped graphene oxide on top of the semiconductor oxide, and contains a source electrode and a drain electrode facing each other. Withdrawn
The preparation method of claim 1, thereby producing a reduced and N-doped graphene oxide having a carbon/oxygen atomic ratio of 2.3-8.5 and a carbon/nitrogen atomic ratio of 10 -
Canceled
Canceled
New
Layer stacks claimed or described, ordered top of device to substrate.
transistor
Materials described outside the worked examples.
graphene oxide
tetramethylammonium hydroxide
(CH₃)4NOH
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 is a schematic diagram illustrating an example of the transistor containing the reduced and N-doped graphene oxide prepared by the method of the present invention; 15
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
C/O atomic ratio range (claim 8) | 2.3–8.5 atomic ratio | reduced and N-doped graphene oxide |
C/N atomic ratio range (claim 8) | 10–20 atomic ratio |
Related documents with shared materials, methods, properties, or citations.
reduced and N-doped graphene oxide
solvents (water, ethanol, DMF, DMSO, THF, acetone)
Figure 2 is a graph illustrating the C/O atomic ratio and the C/N atomic ratio according to the reaction temperature of the reduced and N-doped graphene oxides of prepared in Examples 1 ~ 5 and Comparative Examples 1 ~ 5 and the conventional 20 graphene oxide;
Figure 3 is a graph illustrating the atomic percentage of graphitic C and oxidized C in the reduced and N-doped graphene oxides prepared in Example 1 ~ 5;
Figure 4 is a graph illustrating the result of X- ray diffraction analysis performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6 and the conventional graphene oxide; 5
Figure 5 is a graph illustrating the result of Raman spectroscopy performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6;
Figure 5 is a graph illustrating the result of Raman spectroscopy performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6;
Figure 6 is a graph illustrating the result of X- 10 ray photoelectron spectroscopy performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6;
Figure 7 is a graph illustrating the I D/IG rati o of the 15 reduced and N-doped graphene oxides prepared in Examples 5 and 6 and the conventional graphene oxide; and
Figure 9 are graphs illustrating the performance of the field effect transistors prepared in Examples 7 and 8.
Figure 9 are graphs illustrating the performance of the field effect transistors prepared in Examples 7 and 8.
C/O atomic ratio range (claim 9, preferred) | 3–8 atomic ratio | reduced and N-doped graphene oxide |
C/N atomic ratio range (claim 9, preferred) | 12–16 atomic ratio | reduced and N-doped graphene oxide |
Duration | ≥ 1 hour | — |
reduced and N-doped graphene oxide
solvents (water, ethanol, DMF, DMSO, THF, acetone)
Figure 2 is a graph illustrating the C/O atomic ratio and the C/N atomic ratio according to the reaction temperature of the reduced and N-doped graphene oxides of prepared in Examples 1 ~ 5 and Comparative Examples 1 ~ 5 and the conventional 20 graphene oxide;
Figure 3 is a graph illustrating the atomic percentage of graphitic C and oxidized C in the reduced and N-doped graphene oxides prepared in Example 1 ~ 5;
Figure 4 is a graph illustrating the result of X- ray diffraction analysis performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6 and the conventional graphene oxide; 5
Figure 5 is a graph illustrating the result of Raman spectroscopy performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6;
Figure 5 is a graph illustrating the result of Raman spectroscopy performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6;
Figure 6 is a graph illustrating the result of X- 10 ray photoelectron spectroscopy performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6;
Figure 7 is a graph illustrating the I D/IG rati o of the 15 reduced and N-doped graphene oxides prepared in Examples 5 and 6 and the conventional graphene oxide; and
Figure 9 are graphs illustrating the performance of the field effect transistors prepared in Examples 7 and 8.
Figure 9 are graphs illustrating the performance of the field effect transistors prepared in Examples 7 and 8.
C/O atomic ratio range (claim 9, preferred) | 3–8 atomic ratio | reduced and N-doped graphene oxide |
C/N atomic ratio range (claim 9, preferred) | 12–16 atomic ratio | reduced and N-doped graphene oxide |
Duration | ≥ 1 hour | — |
reduced and N-doped graphene oxide
solvents (water, ethanol, DMF, DMSO, THF, acetone)
Figure 2 is a graph illustrating the C/O atomic ratio and the C/N atomic ratio according to the reaction temperature of the reduced and N-doped graphene oxides of prepared in Examples 1 ~ 5 and Comparative Examples 1 ~ 5 and the conventional 20 graphene oxide;
Figure 3 is a graph illustrating the atomic percentage of graphitic C and oxidized C in the reduced and N-doped graphene oxides prepared in Example 1 ~ 5;
Figure 4 is a graph illustrating the result of X- ray diffraction analysis performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6 and the conventional graphene oxide; 5
Figure 5 is a graph illustrating the result of Raman spectroscopy performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6;
Figure 5 is a graph illustrating the result of Raman spectroscopy performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6;
Figure 6 is a graph illustrating the result of X- 10 ray photoelectron spectroscopy performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6;
Figure 7 is a graph illustrating the I D/IG rati o of the 15 reduced and N-doped graphene oxides prepared in Examples 5 and 6 and the conventional graphene oxide; and
Figure 9 are graphs illustrating the performance of the field effect transistors prepared in Examples 7 and 8.
Figure 9 are graphs illustrating the performance of the field effect transistors prepared in Examples 7 and 8.
C/O atomic ratio range (claim 9, preferred) | 3–8 atomic ratio | reduced and N-doped graphene oxide |
C/N atomic ratio range (claim 9, preferred) | 12–16 atomic ratio | reduced and N-doped graphene oxide |
Duration | ≥ 1 hour | — |
reduced and N-doped graphene oxide
solvents (water, ethanol, DMF, DMSO, THF, acetone)
Figure 2 is a graph illustrating the C/O atomic ratio and the C/N atomic ratio according to the reaction temperature of the reduced and N-doped graphene oxides of prepared in Examples 1 ~ 5 and Comparative Examples 1 ~ 5 and the conventional 20 graphene oxide;
Figure 3 is a graph illustrating the atomic percentage of graphitic C and oxidized C in the reduced and N-doped graphene oxides prepared in Example 1 ~ 5;
Figure 4 is a graph illustrating the result of X- ray diffraction analysis performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6 and the conventional graphene oxide; 5
Figure 5 is a graph illustrating the result of Raman spectroscopy performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6;
Figure 5 is a graph illustrating the result of Raman spectroscopy performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6;
Figure 6 is a graph illustrating the result of X- 10 ray photoelectron spectroscopy performed to analyze the reduced and N-doped graphene oxides prepared in Examples 5 and 6;
Figure 7 is a graph illustrating the I D/IG rati o of the 15 reduced and N-doped graphene oxides prepared in Examples 5 and 6 and the conventional graphene oxide; and
Figure 9 are graphs illustrating the performance of the field effect transistors prepared in Examples 7 and 8.
Figure 9 are graphs illustrating the performance of the field effect transistors prepared in Examples 7 and 8.
C/O atomic ratio range (claim 9, preferred) | 3–8 atomic ratio | reduced and N-doped graphene oxide |
C/N atomic ratio range (claim 9, preferred) | 12–16 atomic ratio | reduced and N-doped graphene oxide |
Duration | ≥ 1 hour | — |