Patent
US 10,714,648SOLAR CELL WITH GRAPHENE-SILICON QUANTUM DOT HYBRID STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Suk Ho CHOI
US
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US 10,714,648Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 1 A to 1 1 C illustrate a process of manufacturing a solar cell with a graphene- silicon quantum dot hybrid structure according to another embodiment …
FIGS. 2A to 2G illustrate a process of manufacturing a solar cell with a graphene-silicon quantum dot hybrid structure according to an embodiment of the …
FIG. 3 illustrates a flowchart of a method of manufacturing a solar cell with a graphene- silicon quantum dot hybrid structure according to an embodiment of the …
FIGS. 4A to 4C illustrate Raman spectrum characteristics, which are dependent upon a doping concentration of graphene, of a solar cell with a graphene-silicon …
FIG. 5 illustrates graphene sheet resistance, which is dependent upon a doping concentration of graphene, of solar cells with a graphene-silicon quantum dot …
FIG. 6 illustrates graphene transmittance, which is dependent upon a doping concentration of graphene, of solar cells with a graphene-silicon quantum dot …
FIG. 7 illustrates a change, which is dependent upon annealing temperature, in characteristics of solar cells with a graphene-silicon quantum dot hybrid …
FIG. 8 illustrates a change, which is dependent upon a doping concentration of graphene, in characteristics of solar cells with a graphene-silicon quantum dot …
FIGS. 9A and 9B illustrate a band structure and mechanism of graphene and silicon 7 quantum dots doped on a solar cell with a graphene-silicon quantum dot …
FIG. 10 illustrates a sectional view of a solar cell with a graphene-silicon quantum dot hybrid structure according to another embodiment of the present …
FIG. 11B. In accordance with an embodiment, in the method of manufacturing the graphene thin film, a 70 p m copper (Cu) foil, as a catalyst layer, was disposed …
FIG. 12 illustrates a flowchart of a method of manufacturing a solar cell with a graphene-silicon quantum dot hybrid structure according to another embodiment …
FIG. 13 illustrates a change, which is dependent upon a doping concentration of graphene, in characteristics of a solar cell with a graphene-silicon quantum …
FIG. 14 illustrates a sectional view of a solar cell with a graphene-silicon quantum dot hybrid structure according to another embodiment of the present …
FIG. 15 illustrates a flowchart of a method of manufacturing a solar cell with a graphene-silicon quantum dot hybrid structure according to another embodiment …
FIG. 16 illustrates a change, which is dependent upon the concentration of a metal nanowire layer, in characteristics of a solar cell with a graphene-silicon …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A solar cell with a graphene-silicon quantum dot hybrid structure, comprising: a hybrid structure comprising a silicon quantum dot layer a silicon oxide layer a plurality of silicon quantum dots; a doped graphene layer formed on the silicon quantum dot layer, and an encapsulation layer formed on the doped graphene layer and encapsulating the doped graphene layer; and electrodes formed on upper and lower parts of the hybrid structure, wherein the doped graphene layer is doped with AuC l3 aw ing a doping concentration of wherein the encapsulation layer prevents dopants in the doped graphene layer from being exposed to air, increasing energy conversion efficiency, and wherein the encapsulation layer is formed of an undoped graphene. Currently amended
The solar cell according to claim 1, wherein the hybrid structure and the electrode are subjected to annealing. Original
: The solar cell according to claim 1, wherein the doped graphene layer has a sheet resistance of 150 ohm/sq to 500 ohm/sq. Original
Canceled
Canceled
: A solar cell with a graphene-silicon quantum dot hybrid structure, comprising: a hybrid structure comprising a silicon quantum dot layer, in which a silicon oxide layer comprises a plurality of silicon quantum dots; a graphene layer on the silicon quantum dot layer; and a metal nanowire layer formed on the graphene layer; and electrodes formed on upper and lower parts of the hybrid structure. Withdrawn
: The solar cell according to claim 7, wherein the metal nanowire layer is formed of silver nanowires. Withdrawn
: A method of manufacturing a solar cell with a graphene-silicon quantum dot hybrid structure, the method comprising: forming silicon quantum dot layer, in which the silicon oxide layer comprises the plurality of silicon quantum dots, on a substrate; forming a doped graphene layer on the silicon quantum dot layer; forming an encapsulation layer on the doped graphene layer to complete a hybrid structure; and forming electrodes on upper and lower parts of the hybrid structure. Withdrawn
: The method according to claim 9, wherein the forming of the encapsulation layer comprises: forming a conductive thin film on the substrate; and transferring the conductive thin film onto the doped graphene layer to form an encapsulation layer. Withdrawn
: The method according to claim 9, wherein the forming of the silicon quantum dot layer comprises: manufacturing a multi-layered sample by alternately laminating a silicon oxide (SiO 2) thin film and a boron (B)-doped silicon suboxide (SiO x) thin film on the substrate; and forming the silicon quantum dot layer, in which the silicon quantum dots are uniformly distributed in the silicon oxide layer, by annealing the multi-layered sample. Withdrawn
: The method according to claim 9, wherein the forming of the doped graphene layer comprises: forming a graphene thin film on a catalyst layer by reacting a carbon-containing mixed gas with the catalyst layer; forming a graphene layer by transferring the graphene thin film onto the silicon quantum dot layer, followed by annealing; and forming the doped graphene layer by spin-coating a solution comprising AuC l3 on the graphene layer, followed by annealing. Withdrawn
: The method according to claim 9, further comprising, after the forming of the electrodes, annealing the hybrid structure, on the upper and lower parts of which the electrodes are formed. Withdrawn
: A method of manufacturing a solar cell with a graphene-silicon quantum dot hybrid structure, the method comprising: forming a silicon quantum dot layer, in which a silicon oxide layer comprises a plurality of silicon quantum dots, on a substrate; forming a graphene layer on the silicon quantum dot layer; forming a metal nanowire layer on the graphene layer to complete a hybrid structure; and STATEMENT OF SUBSTANCE OF I NTERVIEW Attorney Docket No.: Q₂₃₁₁₇₉ forming electrodes on upper and lower parts of the hybrid structure. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
solar cell with doped graphene and encapsulation layer
solar cell with graphene and metal nanowire layer
Materials described outside the worked examples.
silicon quantum dots
doped graphene (AuCl₃-doped)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 4A to 4C illustrate Raman spectrum characteristics, which are dependent upon a doping concentration of graphene, of a solar cell with a graphene-silicon …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | 150–500 ohm/sq | doped graphene (AuCl₃-doped) |
Flow Rate | 10–30 sccm |
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Patent
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US 10,714,648Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 1 A to 1 1 C illustrate a process of manufacturing a solar cell with a graphene- silicon quantum dot hybrid structure according to another embodiment …
FIGS. 2A to 2G illustrate a process of manufacturing a solar cell with a graphene-silicon quantum dot hybrid structure according to an embodiment of the …
FIG. 3 illustrates a flowchart of a method of manufacturing a solar cell with a graphene- silicon quantum dot hybrid structure according to an embodiment of the …
FIGS. 4A to 4C illustrate Raman spectrum characteristics, which are dependent upon a doping concentration of graphene, of a solar cell with a graphene-silicon …
FIG. 5 illustrates graphene sheet resistance, which is dependent upon a doping concentration of graphene, of solar cells with a graphene-silicon quantum dot …
FIG. 6 illustrates graphene transmittance, which is dependent upon a doping concentration of graphene, of solar cells with a graphene-silicon quantum dot …
FIG. 7 illustrates a change, which is dependent upon annealing temperature, in characteristics of solar cells with a graphene-silicon quantum dot hybrid …
FIG. 8 illustrates a change, which is dependent upon a doping concentration of graphene, in characteristics of solar cells with a graphene-silicon quantum dot …
FIGS. 9A and 9B illustrate a band structure and mechanism of graphene and silicon 7 quantum dots doped on a solar cell with a graphene-silicon quantum dot …
FIG. 10 illustrates a sectional view of a solar cell with a graphene-silicon quantum dot hybrid structure according to another embodiment of the present …
FIG. 11B. In accordance with an embodiment, in the method of manufacturing the graphene thin film, a 70 p m copper (Cu) foil, as a catalyst layer, was disposed …
FIG. 12 illustrates a flowchart of a method of manufacturing a solar cell with a graphene-silicon quantum dot hybrid structure according to another embodiment …
FIG. 13 illustrates a change, which is dependent upon a doping concentration of graphene, in characteristics of a solar cell with a graphene-silicon quantum …
FIG. 14 illustrates a sectional view of a solar cell with a graphene-silicon quantum dot hybrid structure according to another embodiment of the present …
FIG. 15 illustrates a flowchart of a method of manufacturing a solar cell with a graphene-silicon quantum dot hybrid structure according to another embodiment …
FIG. 16 illustrates a change, which is dependent upon the concentration of a metal nanowire layer, in characteristics of a solar cell with a graphene-silicon …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A solar cell with a graphene-silicon quantum dot hybrid structure, comprising: a hybrid structure comprising a silicon quantum dot layer a silicon oxide layer a plurality of silicon quantum dots; a doped graphene layer formed on the silicon quantum dot layer, and an encapsulation layer formed on the doped graphene layer and encapsulating the doped graphene layer; and electrodes formed on upper and lower parts of the hybrid structure, wherein the doped graphene layer is doped with AuC l3 aw ing a doping concentration of wherein the encapsulation layer prevents dopants in the doped graphene layer from being exposed to air, increasing energy conversion efficiency, and wherein the encapsulation layer is formed of an undoped graphene. Currently amended
The solar cell according to claim 1, wherein the hybrid structure and the electrode are subjected to annealing. Original
: The solar cell according to claim 1, wherein the doped graphene layer has a sheet resistance of 150 ohm/sq to 500 ohm/sq. Original
Canceled
Canceled
: A solar cell with a graphene-silicon quantum dot hybrid structure, comprising: a hybrid structure comprising a silicon quantum dot layer, in which a silicon oxide layer comprises a plurality of silicon quantum dots; a graphene layer on the silicon quantum dot layer; and a metal nanowire layer formed on the graphene layer; and electrodes formed on upper and lower parts of the hybrid structure. Withdrawn
: The solar cell according to claim 7, wherein the metal nanowire layer is formed of silver nanowires. Withdrawn
: A method of manufacturing a solar cell with a graphene-silicon quantum dot hybrid structure, the method comprising: forming silicon quantum dot layer, in which the silicon oxide layer comprises the plurality of silicon quantum dots, on a substrate; forming a doped graphene layer on the silicon quantum dot layer; forming an encapsulation layer on the doped graphene layer to complete a hybrid structure; and forming electrodes on upper and lower parts of the hybrid structure. Withdrawn
: The method according to claim 9, wherein the forming of the encapsulation layer comprises: forming a conductive thin film on the substrate; and transferring the conductive thin film onto the doped graphene layer to form an encapsulation layer. Withdrawn
: The method according to claim 9, wherein the forming of the silicon quantum dot layer comprises: manufacturing a multi-layered sample by alternately laminating a silicon oxide (SiO 2) thin film and a boron (B)-doped silicon suboxide (SiO x) thin film on the substrate; and forming the silicon quantum dot layer, in which the silicon quantum dots are uniformly distributed in the silicon oxide layer, by annealing the multi-layered sample. Withdrawn
: The method according to claim 9, wherein the forming of the doped graphene layer comprises: forming a graphene thin film on a catalyst layer by reacting a carbon-containing mixed gas with the catalyst layer; forming a graphene layer by transferring the graphene thin film onto the silicon quantum dot layer, followed by annealing; and forming the doped graphene layer by spin-coating a solution comprising AuC l3 on the graphene layer, followed by annealing. Withdrawn
: The method according to claim 9, further comprising, after the forming of the electrodes, annealing the hybrid structure, on the upper and lower parts of which the electrodes are formed. Withdrawn
: A method of manufacturing a solar cell with a graphene-silicon quantum dot hybrid structure, the method comprising: forming a silicon quantum dot layer, in which a silicon oxide layer comprises a plurality of silicon quantum dots, on a substrate; forming a graphene layer on the silicon quantum dot layer; forming a metal nanowire layer on the graphene layer to complete a hybrid structure; and STATEMENT OF SUBSTANCE OF I NTERVIEW Attorney Docket No.: Q₂₃₁₁₇₉ forming electrodes on upper and lower parts of the hybrid structure. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
solar cell with doped graphene and encapsulation layer
solar cell with graphene and metal nanowire layer
Materials described outside the worked examples.
silicon quantum dots
doped graphene (AuCl₃-doped)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 4A to 4C illustrate Raman spectrum characteristics, which are dependent upon a doping concentration of graphene, of a solar cell with a graphene-silicon …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | 150–500 ohm/sq | doped graphene (AuCl₃-doped) |
Flow Rate | 10–30 sccm |
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Patent
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US 10,714,648Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 1 A to 1 1 C illustrate a process of manufacturing a solar cell with a graphene- silicon quantum dot hybrid structure according to another embodiment …
FIGS. 2A to 2G illustrate a process of manufacturing a solar cell with a graphene-silicon quantum dot hybrid structure according to an embodiment of the …
FIG. 3 illustrates a flowchart of a method of manufacturing a solar cell with a graphene- silicon quantum dot hybrid structure according to an embodiment of the …
FIGS. 4A to 4C illustrate Raman spectrum characteristics, which are dependent upon a doping concentration of graphene, of a solar cell with a graphene-silicon …
FIG. 5 illustrates graphene sheet resistance, which is dependent upon a doping concentration of graphene, of solar cells with a graphene-silicon quantum dot …
FIG. 6 illustrates graphene transmittance, which is dependent upon a doping concentration of graphene, of solar cells with a graphene-silicon quantum dot …
FIG. 7 illustrates a change, which is dependent upon annealing temperature, in characteristics of solar cells with a graphene-silicon quantum dot hybrid …
FIG. 8 illustrates a change, which is dependent upon a doping concentration of graphene, in characteristics of solar cells with a graphene-silicon quantum dot …
FIGS. 9A and 9B illustrate a band structure and mechanism of graphene and silicon 7 quantum dots doped on a solar cell with a graphene-silicon quantum dot …
FIG. 10 illustrates a sectional view of a solar cell with a graphene-silicon quantum dot hybrid structure according to another embodiment of the present …
FIG. 11B. In accordance with an embodiment, in the method of manufacturing the graphene thin film, a 70 p m copper (Cu) foil, as a catalyst layer, was disposed …
FIG. 12 illustrates a flowchart of a method of manufacturing a solar cell with a graphene-silicon quantum dot hybrid structure according to another embodiment …
FIG. 13 illustrates a change, which is dependent upon a doping concentration of graphene, in characteristics of a solar cell with a graphene-silicon quantum …
FIG. 14 illustrates a sectional view of a solar cell with a graphene-silicon quantum dot hybrid structure according to another embodiment of the present …
FIG. 15 illustrates a flowchart of a method of manufacturing a solar cell with a graphene-silicon quantum dot hybrid structure according to another embodiment …
FIG. 16 illustrates a change, which is dependent upon the concentration of a metal nanowire layer, in characteristics of a solar cell with a graphene-silicon …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A solar cell with a graphene-silicon quantum dot hybrid structure, comprising: a hybrid structure comprising a silicon quantum dot layer a silicon oxide layer a plurality of silicon quantum dots; a doped graphene layer formed on the silicon quantum dot layer, and an encapsulation layer formed on the doped graphene layer and encapsulating the doped graphene layer; and electrodes formed on upper and lower parts of the hybrid structure, wherein the doped graphene layer is doped with AuC l3 aw ing a doping concentration of wherein the encapsulation layer prevents dopants in the doped graphene layer from being exposed to air, increasing energy conversion efficiency, and wherein the encapsulation layer is formed of an undoped graphene. Currently amended
The solar cell according to claim 1, wherein the hybrid structure and the electrode are subjected to annealing. Original
: The solar cell according to claim 1, wherein the doped graphene layer has a sheet resistance of 150 ohm/sq to 500 ohm/sq. Original
Canceled
Canceled
: A solar cell with a graphene-silicon quantum dot hybrid structure, comprising: a hybrid structure comprising a silicon quantum dot layer, in which a silicon oxide layer comprises a plurality of silicon quantum dots; a graphene layer on the silicon quantum dot layer; and a metal nanowire layer formed on the graphene layer; and electrodes formed on upper and lower parts of the hybrid structure. Withdrawn
: The solar cell according to claim 7, wherein the metal nanowire layer is formed of silver nanowires. Withdrawn
: A method of manufacturing a solar cell with a graphene-silicon quantum dot hybrid structure, the method comprising: forming silicon quantum dot layer, in which the silicon oxide layer comprises the plurality of silicon quantum dots, on a substrate; forming a doped graphene layer on the silicon quantum dot layer; forming an encapsulation layer on the doped graphene layer to complete a hybrid structure; and forming electrodes on upper and lower parts of the hybrid structure. Withdrawn
: The method according to claim 9, wherein the forming of the encapsulation layer comprises: forming a conductive thin film on the substrate; and transferring the conductive thin film onto the doped graphene layer to form an encapsulation layer. Withdrawn
: The method according to claim 9, wherein the forming of the silicon quantum dot layer comprises: manufacturing a multi-layered sample by alternately laminating a silicon oxide (SiO 2) thin film and a boron (B)-doped silicon suboxide (SiO x) thin film on the substrate; and forming the silicon quantum dot layer, in which the silicon quantum dots are uniformly distributed in the silicon oxide layer, by annealing the multi-layered sample. Withdrawn
: The method according to claim 9, wherein the forming of the doped graphene layer comprises: forming a graphene thin film on a catalyst layer by reacting a carbon-containing mixed gas with the catalyst layer; forming a graphene layer by transferring the graphene thin film onto the silicon quantum dot layer, followed by annealing; and forming the doped graphene layer by spin-coating a solution comprising AuC l3 on the graphene layer, followed by annealing. Withdrawn
: The method according to claim 9, further comprising, after the forming of the electrodes, annealing the hybrid structure, on the upper and lower parts of which the electrodes are formed. Withdrawn
: A method of manufacturing a solar cell with a graphene-silicon quantum dot hybrid structure, the method comprising: forming a silicon quantum dot layer, in which a silicon oxide layer comprises a plurality of silicon quantum dots, on a substrate; forming a graphene layer on the silicon quantum dot layer; forming a metal nanowire layer on the graphene layer to complete a hybrid structure; and STATEMENT OF SUBSTANCE OF I NTERVIEW Attorney Docket No.: Q₂₃₁₁₇₉ forming electrodes on upper and lower parts of the hybrid structure. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
solar cell with doped graphene and encapsulation layer
solar cell with graphene and metal nanowire layer
Materials described outside the worked examples.
silicon quantum dots
doped graphene (AuCl₃-doped)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 4A to 4C illustrate Raman spectrum characteristics, which are dependent upon a doping concentration of graphene, of a solar cell with a graphene-silicon …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | 150–500 ohm/sq | doped graphene (AuCl₃-doped) |
Flow Rate | 10–30 sccm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,714,648Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 1 A to 1 1 C illustrate a process of manufacturing a solar cell with a graphene- silicon quantum dot hybrid structure according to another embodiment …
FIGS. 2A to 2G illustrate a process of manufacturing a solar cell with a graphene-silicon quantum dot hybrid structure according to an embodiment of the …
FIG. 3 illustrates a flowchart of a method of manufacturing a solar cell with a graphene- silicon quantum dot hybrid structure according to an embodiment of the …
FIGS. 4A to 4C illustrate Raman spectrum characteristics, which are dependent upon a doping concentration of graphene, of a solar cell with a graphene-silicon …
FIG. 5 illustrates graphene sheet resistance, which is dependent upon a doping concentration of graphene, of solar cells with a graphene-silicon quantum dot …
FIG. 6 illustrates graphene transmittance, which is dependent upon a doping concentration of graphene, of solar cells with a graphene-silicon quantum dot …
FIG. 7 illustrates a change, which is dependent upon annealing temperature, in characteristics of solar cells with a graphene-silicon quantum dot hybrid …
FIG. 8 illustrates a change, which is dependent upon a doping concentration of graphene, in characteristics of solar cells with a graphene-silicon quantum dot …
FIGS. 9A and 9B illustrate a band structure and mechanism of graphene and silicon 7 quantum dots doped on a solar cell with a graphene-silicon quantum dot …
FIG. 10 illustrates a sectional view of a solar cell with a graphene-silicon quantum dot hybrid structure according to another embodiment of the present …
FIG. 11B. In accordance with an embodiment, in the method of manufacturing the graphene thin film, a 70 p m copper (Cu) foil, as a catalyst layer, was disposed …
FIG. 12 illustrates a flowchart of a method of manufacturing a solar cell with a graphene-silicon quantum dot hybrid structure according to another embodiment …
FIG. 13 illustrates a change, which is dependent upon a doping concentration of graphene, in characteristics of a solar cell with a graphene-silicon quantum …
FIG. 14 illustrates a sectional view of a solar cell with a graphene-silicon quantum dot hybrid structure according to another embodiment of the present …
FIG. 15 illustrates a flowchart of a method of manufacturing a solar cell with a graphene-silicon quantum dot hybrid structure according to another embodiment …
FIG. 16 illustrates a change, which is dependent upon the concentration of a metal nanowire layer, in characteristics of a solar cell with a graphene-silicon …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A solar cell with a graphene-silicon quantum dot hybrid structure, comprising: a hybrid structure comprising a silicon quantum dot layer a silicon oxide layer a plurality of silicon quantum dots; a doped graphene layer formed on the silicon quantum dot layer, and an encapsulation layer formed on the doped graphene layer and encapsulating the doped graphene layer; and electrodes formed on upper and lower parts of the hybrid structure, wherein the doped graphene layer is doped with AuC l3 aw ing a doping concentration of wherein the encapsulation layer prevents dopants in the doped graphene layer from being exposed to air, increasing energy conversion efficiency, and wherein the encapsulation layer is formed of an undoped graphene. Currently amended
The solar cell according to claim 1, wherein the hybrid structure and the electrode are subjected to annealing. Original
: The solar cell according to claim 1, wherein the doped graphene layer has a sheet resistance of 150 ohm/sq to 500 ohm/sq. Original
Canceled
Canceled
: A solar cell with a graphene-silicon quantum dot hybrid structure, comprising: a hybrid structure comprising a silicon quantum dot layer, in which a silicon oxide layer comprises a plurality of silicon quantum dots; a graphene layer on the silicon quantum dot layer; and a metal nanowire layer formed on the graphene layer; and electrodes formed on upper and lower parts of the hybrid structure. Withdrawn
: The solar cell according to claim 7, wherein the metal nanowire layer is formed of silver nanowires. Withdrawn
: A method of manufacturing a solar cell with a graphene-silicon quantum dot hybrid structure, the method comprising: forming silicon quantum dot layer, in which the silicon oxide layer comprises the plurality of silicon quantum dots, on a substrate; forming a doped graphene layer on the silicon quantum dot layer; forming an encapsulation layer on the doped graphene layer to complete a hybrid structure; and forming electrodes on upper and lower parts of the hybrid structure. Withdrawn
: The method according to claim 9, wherein the forming of the encapsulation layer comprises: forming a conductive thin film on the substrate; and transferring the conductive thin film onto the doped graphene layer to form an encapsulation layer. Withdrawn
: The method according to claim 9, wherein the forming of the silicon quantum dot layer comprises: manufacturing a multi-layered sample by alternately laminating a silicon oxide (SiO 2) thin film and a boron (B)-doped silicon suboxide (SiO x) thin film on the substrate; and forming the silicon quantum dot layer, in which the silicon quantum dots are uniformly distributed in the silicon oxide layer, by annealing the multi-layered sample. Withdrawn
: The method according to claim 9, wherein the forming of the doped graphene layer comprises: forming a graphene thin film on a catalyst layer by reacting a carbon-containing mixed gas with the catalyst layer; forming a graphene layer by transferring the graphene thin film onto the silicon quantum dot layer, followed by annealing; and forming the doped graphene layer by spin-coating a solution comprising AuC l3 on the graphene layer, followed by annealing. Withdrawn
: The method according to claim 9, further comprising, after the forming of the electrodes, annealing the hybrid structure, on the upper and lower parts of which the electrodes are formed. Withdrawn
: A method of manufacturing a solar cell with a graphene-silicon quantum dot hybrid structure, the method comprising: forming a silicon quantum dot layer, in which a silicon oxide layer comprises a plurality of silicon quantum dots, on a substrate; forming a graphene layer on the silicon quantum dot layer; forming a metal nanowire layer on the graphene layer to complete a hybrid structure; and STATEMENT OF SUBSTANCE OF I NTERVIEW Attorney Docket No.: Q₂₃₁₁₇₉ forming electrodes on upper and lower parts of the hybrid structure. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
solar cell with doped graphene and encapsulation layer
solar cell with graphene and metal nanowire layer
Materials described outside the worked examples.
silicon quantum dots
doped graphene (AuCl₃-doped)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 4A to 4C illustrate Raman spectrum characteristics, which are dependent upon a doping concentration of graphene, of a solar cell with a graphene-silicon …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | 150–500 ohm/sq | doped graphene (AuCl₃-doped) |
Flow Rate | 10–30 sccm |
Related documents with shared materials, methods, properties, or citations.
silicon oxide
SiO₂
undoped graphene encapsulation layer
graphene
metal nanowire layer
silver nanowires
Ag
boron-doped silicon suboxide thin film
SiOx:B
AuCl₃
FIG. 5 illustrates graphene sheet resistance, which is dependent upon a doping concentration of graphene, of solar cells with a graphene-silicon quantum dot …
FIGS. 9A and 9B illustrate a band structure and mechanism of graphene and silicon 7 quantum dots doped on a solar cell with a graphene-silicon quantum dot …
| — |
Duration | 3–5 hours | — |
Thickness | 1–30 mM | — |
Thickness | 1–20 mM | — |
Thickness | 1–10 mM | — |
Duration | 5–120 minutes | — |
Duration | 10–60 minutes | — |
Duration | 20–40 minutes | — |
Thickness | 0–30 mM | — |
Duration | 10–30 minutes | — |
Duration | ≤ 5 minutes | — |
Duration | ≥ 120 minutes | — |
Temperature | 450–550 °C | — |
silicon oxide
SiO₂
undoped graphene encapsulation layer
graphene
metal nanowire layer
silver nanowires
Ag
boron-doped silicon suboxide thin film
SiOx:B
AuCl₃
FIG. 5 illustrates graphene sheet resistance, which is dependent upon a doping concentration of graphene, of solar cells with a graphene-silicon quantum dot …
FIGS. 9A and 9B illustrate a band structure and mechanism of graphene and silicon 7 quantum dots doped on a solar cell with a graphene-silicon quantum dot …
| — |
Duration | 3–5 hours | — |
Thickness | 1–30 mM | — |
Thickness | 1–20 mM | — |
Thickness | 1–10 mM | — |
Duration | 5–120 minutes | — |
Duration | 10–60 minutes | — |
Duration | 20–40 minutes | — |
Thickness | 0–30 mM | — |
Duration | 10–30 minutes | — |
Duration | ≤ 5 minutes | — |
Duration | ≥ 120 minutes | — |
Temperature | 450–550 °C | — |
silicon oxide
SiO₂
undoped graphene encapsulation layer
graphene
metal nanowire layer
silver nanowires
Ag
boron-doped silicon suboxide thin film
SiOx:B
AuCl₃
FIG. 5 illustrates graphene sheet resistance, which is dependent upon a doping concentration of graphene, of solar cells with a graphene-silicon quantum dot …
FIGS. 9A and 9B illustrate a band structure and mechanism of graphene and silicon 7 quantum dots doped on a solar cell with a graphene-silicon quantum dot …
| — |
Duration | 3–5 hours | — |
Thickness | 1–30 mM | — |
Thickness | 1–20 mM | — |
Thickness | 1–10 mM | — |
Duration | 5–120 minutes | — |
Duration | 10–60 minutes | — |
Duration | 20–40 minutes | — |
Thickness | 0–30 mM | — |
Duration | 10–30 minutes | — |
Duration | ≤ 5 minutes | — |
Duration | ≥ 120 minutes | — |
Temperature | 450–550 °C | — |
silicon oxide
SiO₂
undoped graphene encapsulation layer
graphene
metal nanowire layer
silver nanowires
Ag
boron-doped silicon suboxide thin film
SiOx:B
AuCl₃
FIG. 5 illustrates graphene sheet resistance, which is dependent upon a doping concentration of graphene, of solar cells with a graphene-silicon quantum dot …
FIGS. 9A and 9B illustrate a band structure and mechanism of graphene and silicon 7 quantum dots doped on a solar cell with a graphene-silicon quantum dot …
| — |
Duration | 3–5 hours | — |
Thickness | 1–30 mM | — |
Thickness | 1–20 mM | — |
Thickness | 1–10 mM | — |
Duration | 5–120 minutes | — |
Duration | 10–60 minutes | — |
Duration | 20–40 minutes | — |
Thickness | 0–30 mM | — |
Duration | 10–30 minutes | — |
Duration | ≤ 5 minutes | — |
Duration | ≥ 120 minutes | — |
Temperature | 450–550 °C | — |