Patent
US 9,324,839GRAPHENE STRUCTURE, GRAPHENE DEVICE INCLUDING SAME, AND METHOD OF MANUFACTURING GRAPHENE STRUCTURE
Joung-real AHN
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,324,839Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a sectional view of a graphene structure according to an example embodiment; [0038]
FIGS. 2A to 2E are views describing a method of manufacturing a graphene structure including a first inserting layer according to an example embodiment. [0068] …
FIGS. 3A to 3C are views illustrating, on an atom basis, processes of forming a graphene layer on a region containing relatively more silicon; [0040]
FIGS. 4A to 4C are views illustrating, on an atom basis, processes of forming a graphene layer on a region containing relatively more carbon; [0041]
FIG. 5A is a scanning tunneling microscope (STM) image of a silicon carbide substrate while it is being heated; [0042]
FIG. 6A is a view of binding energy of a graphene layer which is formed on a region containing relatively more silicon of a silicon carbide substrate; [0044]
FIGS. 7A to 7C are views describing a method of manufacturing a graphene structure including a second inserting layer, according to another example embodiment; …
FIG. 8B is a graph of binding energy of a graphene layer when a second inserting layer is formed; [0048]
FIG. 9 illustrates an exemplary structure of a graphene device which is fo rmed by transferring a graphene layer of a graphene structure, according to an …
FIG. 10 illustrates an exemplary structure of a graphene device which is manufactured from a graphene structure, according to another example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a graphene structure, the method comprising: depositing a metal layer over a silicon carbide substrate; and perfor m ing, at a first temperature, a first heat treatment on the silicon carbide substrate over which the metal layer is deposited to fo rm simultaneously a composite layer and a graphene layer on the silicon carbide substrate, the composite layer including a metal, and the composite layer being interposed between the silicon carbide substrate and the graphene layer.
The method of claim 1, further comprising: perfor m ing a second heat treatment on the silicon carbide substrate at a second temperature before depositing the metal layer.
The method of claim 1, wherein silicon and carbon are non- uniformly distributed on a surface of the silicon carbide substrate over which the metal layer is deposited.
The method of claim 1, wherein the deposition of the metal layer is performed at about 20 * C-25 *C.
The method of claim 1, wherein the first temperature is about 810 * C to about 900 *C.
The method of claim 1, wherein the composite layer includes at least one of metal-silicide and a metal material.
The method of claim 1, wherein the graphene layer is a single layer. U.S. Application No. 13/924,953 Atty. Dkt. No. 2557S I-00 1964-US Page 4 of 13
The method of claim 1, wherein the graphene layer is electrically neutral.
The method of claim 1, further comprising: performing a second heat treatment on the composite layer and the graphene layer at a second temperature to remove the metal remaining on the graphene layer.
The method of claim 1, further comprising: performing a second heat treatment on the composite layer and the graphene layer at a second temperature to remove the composite layer. withdrawn
(NE w) The method of claim 1, wherein the performing a first heat treatment on the silicon carbide substrate over which the metal layer is deposited to form the graphene layer includes extracting carbon from the silicon carbide substrate to form the graphene layer. *** END CLAIM LISTING
canceled
(WITHDRAWN-CURRENTLY AMENDED) A graphene structure, comprising: a silicon carbide substrate; a graphene layer over the silicon carbide substrate, the graphene layer having an electrically neutral property and being a single layer; and an-inserting a composite layer, on the silicon carbide substrate, between the silicon carbide substrate and the graphene layer, the com p osite laver including a metal, and the composite laver and the grahene laver being simultaneously formed by, denositinE a metal laver over the silicon carbide substrate, and nerformin. at a first temperature. a first heat treatment on the silicon carbide substrate over which the metal laver is deposited.
-20. canceled
A graphene device, comprising the graphene structure of claim 20; and a device layer on the graphene structure. withdrawn
A method of manufacturing a graphene structure, comprising: providing a seed layer over a silicon carbide layer, the seed layer including a metal; and extracting carbon from the silicon carbide layer to form a graphene layer and a graphene support, the graphene support being configured to support the graphene layer, U.S. Application No. 13/924,953 Atty. Dkt. No. 2557S I-00 1964-US Page 6 of 13 the graphene support including the silicon carbide layer and a composite layer, and the composite layer containing the metal from the seed layer.
The method of claim 22, wherein, the providing a seed layer includes forming the seed layer over a first portion of a surface of the silicon carbide layer, the first portion being composed of more silicon than carbon.
The method of claim 22, wherein the extracting carbon includes performing a heat treatment on the silicon carbide layer over which the seed layer is provided.
The method of claim 22, further comprising: removing the composite layer, after forming the graphene layer; and forming a hydrogen layer between the silicon carbide layer and the graphene layer by using a hydrogen gas, the hydrogen layer binding to the silicon carbide layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene structure
graphene device
Materials described outside the worked examples.
silicon carbide substrate
SiC
metal layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8B is a graph of binding energy of a graphene layer when a second inserting layer is formed; [0048]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 700–800 torr | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,324,839Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a sectional view of a graphene structure according to an example embodiment; [0038]
FIGS. 2A to 2E are views describing a method of manufacturing a graphene structure including a first inserting layer according to an example embodiment. [0068] …
FIGS. 3A to 3C are views illustrating, on an atom basis, processes of forming a graphene layer on a region containing relatively more silicon; [0040]
FIGS. 4A to 4C are views illustrating, on an atom basis, processes of forming a graphene layer on a region containing relatively more carbon; [0041]
FIG. 5A is a scanning tunneling microscope (STM) image of a silicon carbide substrate while it is being heated; [0042]
FIG. 6A is a view of binding energy of a graphene layer which is formed on a region containing relatively more silicon of a silicon carbide substrate; [0044]
FIGS. 7A to 7C are views describing a method of manufacturing a graphene structure including a second inserting layer, according to another example embodiment; …
FIG. 8B is a graph of binding energy of a graphene layer when a second inserting layer is formed; [0048]
FIG. 9 illustrates an exemplary structure of a graphene device which is fo rmed by transferring a graphene layer of a graphene structure, according to an …
FIG. 10 illustrates an exemplary structure of a graphene device which is manufactured from a graphene structure, according to another example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a graphene structure, the method comprising: depositing a metal layer over a silicon carbide substrate; and perfor m ing, at a first temperature, a first heat treatment on the silicon carbide substrate over which the metal layer is deposited to fo rm simultaneously a composite layer and a graphene layer on the silicon carbide substrate, the composite layer including a metal, and the composite layer being interposed between the silicon carbide substrate and the graphene layer.
The method of claim 1, further comprising: perfor m ing a second heat treatment on the silicon carbide substrate at a second temperature before depositing the metal layer.
The method of claim 1, wherein silicon and carbon are non- uniformly distributed on a surface of the silicon carbide substrate over which the metal layer is deposited.
The method of claim 1, wherein the deposition of the metal layer is performed at about 20 * C-25 *C.
The method of claim 1, wherein the first temperature is about 810 * C to about 900 *C.
The method of claim 1, wherein the composite layer includes at least one of metal-silicide and a metal material.
The method of claim 1, wherein the graphene layer is a single layer. U.S. Application No. 13/924,953 Atty. Dkt. No. 2557S I-00 1964-US Page 4 of 13
The method of claim 1, wherein the graphene layer is electrically neutral.
The method of claim 1, further comprising: performing a second heat treatment on the composite layer and the graphene layer at a second temperature to remove the metal remaining on the graphene layer.
The method of claim 1, further comprising: performing a second heat treatment on the composite layer and the graphene layer at a second temperature to remove the composite layer. withdrawn
(NE w) The method of claim 1, wherein the performing a first heat treatment on the silicon carbide substrate over which the metal layer is deposited to form the graphene layer includes extracting carbon from the silicon carbide substrate to form the graphene layer. *** END CLAIM LISTING
canceled
(WITHDRAWN-CURRENTLY AMENDED) A graphene structure, comprising: a silicon carbide substrate; a graphene layer over the silicon carbide substrate, the graphene layer having an electrically neutral property and being a single layer; and an-inserting a composite layer, on the silicon carbide substrate, between the silicon carbide substrate and the graphene layer, the com p osite laver including a metal, and the composite laver and the grahene laver being simultaneously formed by, denositinE a metal laver over the silicon carbide substrate, and nerformin. at a first temperature. a first heat treatment on the silicon carbide substrate over which the metal laver is deposited.
-20. canceled
A graphene device, comprising the graphene structure of claim 20; and a device layer on the graphene structure. withdrawn
A method of manufacturing a graphene structure, comprising: providing a seed layer over a silicon carbide layer, the seed layer including a metal; and extracting carbon from the silicon carbide layer to form a graphene layer and a graphene support, the graphene support being configured to support the graphene layer, U.S. Application No. 13/924,953 Atty. Dkt. No. 2557S I-00 1964-US Page 6 of 13 the graphene support including the silicon carbide layer and a composite layer, and the composite layer containing the metal from the seed layer.
The method of claim 22, wherein, the providing a seed layer includes forming the seed layer over a first portion of a surface of the silicon carbide layer, the first portion being composed of more silicon than carbon.
The method of claim 22, wherein the extracting carbon includes performing a heat treatment on the silicon carbide layer over which the seed layer is provided.
The method of claim 22, further comprising: removing the composite layer, after forming the graphene layer; and forming a hydrogen layer between the silicon carbide layer and the graphene layer by using a hydrogen gas, the hydrogen layer binding to the silicon carbide layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene structure
graphene device
Materials described outside the worked examples.
silicon carbide substrate
SiC
metal layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8B is a graph of binding energy of a graphene layer when a second inserting layer is formed; [0048]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 700–800 torr | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,324,839Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a sectional view of a graphene structure according to an example embodiment; [0038]
FIGS. 2A to 2E are views describing a method of manufacturing a graphene structure including a first inserting layer according to an example embodiment. [0068] …
FIGS. 3A to 3C are views illustrating, on an atom basis, processes of forming a graphene layer on a region containing relatively more silicon; [0040]
FIGS. 4A to 4C are views illustrating, on an atom basis, processes of forming a graphene layer on a region containing relatively more carbon; [0041]
FIG. 5A is a scanning tunneling microscope (STM) image of a silicon carbide substrate while it is being heated; [0042]
FIG. 6A is a view of binding energy of a graphene layer which is formed on a region containing relatively more silicon of a silicon carbide substrate; [0044]
FIGS. 7A to 7C are views describing a method of manufacturing a graphene structure including a second inserting layer, according to another example embodiment; …
FIG. 8B is a graph of binding energy of a graphene layer when a second inserting layer is formed; [0048]
FIG. 9 illustrates an exemplary structure of a graphene device which is fo rmed by transferring a graphene layer of a graphene structure, according to an …
FIG. 10 illustrates an exemplary structure of a graphene device which is manufactured from a graphene structure, according to another example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a graphene structure, the method comprising: depositing a metal layer over a silicon carbide substrate; and perfor m ing, at a first temperature, a first heat treatment on the silicon carbide substrate over which the metal layer is deposited to fo rm simultaneously a composite layer and a graphene layer on the silicon carbide substrate, the composite layer including a metal, and the composite layer being interposed between the silicon carbide substrate and the graphene layer.
The method of claim 1, further comprising: perfor m ing a second heat treatment on the silicon carbide substrate at a second temperature before depositing the metal layer.
The method of claim 1, wherein silicon and carbon are non- uniformly distributed on a surface of the silicon carbide substrate over which the metal layer is deposited.
The method of claim 1, wherein the deposition of the metal layer is performed at about 20 * C-25 *C.
The method of claim 1, wherein the first temperature is about 810 * C to about 900 *C.
The method of claim 1, wherein the composite layer includes at least one of metal-silicide and a metal material.
The method of claim 1, wherein the graphene layer is a single layer. U.S. Application No. 13/924,953 Atty. Dkt. No. 2557S I-00 1964-US Page 4 of 13
The method of claim 1, wherein the graphene layer is electrically neutral.
The method of claim 1, further comprising: performing a second heat treatment on the composite layer and the graphene layer at a second temperature to remove the metal remaining on the graphene layer.
The method of claim 1, further comprising: performing a second heat treatment on the composite layer and the graphene layer at a second temperature to remove the composite layer. withdrawn
(NE w) The method of claim 1, wherein the performing a first heat treatment on the silicon carbide substrate over which the metal layer is deposited to form the graphene layer includes extracting carbon from the silicon carbide substrate to form the graphene layer. *** END CLAIM LISTING
canceled
(WITHDRAWN-CURRENTLY AMENDED) A graphene structure, comprising: a silicon carbide substrate; a graphene layer over the silicon carbide substrate, the graphene layer having an electrically neutral property and being a single layer; and an-inserting a composite layer, on the silicon carbide substrate, between the silicon carbide substrate and the graphene layer, the com p osite laver including a metal, and the composite laver and the grahene laver being simultaneously formed by, denositinE a metal laver over the silicon carbide substrate, and nerformin. at a first temperature. a first heat treatment on the silicon carbide substrate over which the metal laver is deposited.
-20. canceled
A graphene device, comprising the graphene structure of claim 20; and a device layer on the graphene structure. withdrawn
A method of manufacturing a graphene structure, comprising: providing a seed layer over a silicon carbide layer, the seed layer including a metal; and extracting carbon from the silicon carbide layer to form a graphene layer and a graphene support, the graphene support being configured to support the graphene layer, U.S. Application No. 13/924,953 Atty. Dkt. No. 2557S I-00 1964-US Page 6 of 13 the graphene support including the silicon carbide layer and a composite layer, and the composite layer containing the metal from the seed layer.
The method of claim 22, wherein, the providing a seed layer includes forming the seed layer over a first portion of a surface of the silicon carbide layer, the first portion being composed of more silicon than carbon.
The method of claim 22, wherein the extracting carbon includes performing a heat treatment on the silicon carbide layer over which the seed layer is provided.
The method of claim 22, further comprising: removing the composite layer, after forming the graphene layer; and forming a hydrogen layer between the silicon carbide layer and the graphene layer by using a hydrogen gas, the hydrogen layer binding to the silicon carbide layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene structure
graphene device
Materials described outside the worked examples.
silicon carbide substrate
SiC
metal layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8B is a graph of binding energy of a graphene layer when a second inserting layer is formed; [0048]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 700–800 torr | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,324,839Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a sectional view of a graphene structure according to an example embodiment; [0038]
FIGS. 2A to 2E are views describing a method of manufacturing a graphene structure including a first inserting layer according to an example embodiment. [0068] …
FIGS. 3A to 3C are views illustrating, on an atom basis, processes of forming a graphene layer on a region containing relatively more silicon; [0040]
FIGS. 4A to 4C are views illustrating, on an atom basis, processes of forming a graphene layer on a region containing relatively more carbon; [0041]
FIG. 5A is a scanning tunneling microscope (STM) image of a silicon carbide substrate while it is being heated; [0042]
FIG. 6A is a view of binding energy of a graphene layer which is formed on a region containing relatively more silicon of a silicon carbide substrate; [0044]
FIGS. 7A to 7C are views describing a method of manufacturing a graphene structure including a second inserting layer, according to another example embodiment; …
FIG. 8B is a graph of binding energy of a graphene layer when a second inserting layer is formed; [0048]
FIG. 9 illustrates an exemplary structure of a graphene device which is fo rmed by transferring a graphene layer of a graphene structure, according to an …
FIG. 10 illustrates an exemplary structure of a graphene device which is manufactured from a graphene structure, according to another example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a graphene structure, the method comprising: depositing a metal layer over a silicon carbide substrate; and perfor m ing, at a first temperature, a first heat treatment on the silicon carbide substrate over which the metal layer is deposited to fo rm simultaneously a composite layer and a graphene layer on the silicon carbide substrate, the composite layer including a metal, and the composite layer being interposed between the silicon carbide substrate and the graphene layer.
The method of claim 1, further comprising: perfor m ing a second heat treatment on the silicon carbide substrate at a second temperature before depositing the metal layer.
The method of claim 1, wherein silicon and carbon are non- uniformly distributed on a surface of the silicon carbide substrate over which the metal layer is deposited.
The method of claim 1, wherein the deposition of the metal layer is performed at about 20 * C-25 *C.
The method of claim 1, wherein the first temperature is about 810 * C to about 900 *C.
The method of claim 1, wherein the composite layer includes at least one of metal-silicide and a metal material.
The method of claim 1, wherein the graphene layer is a single layer. U.S. Application No. 13/924,953 Atty. Dkt. No. 2557S I-00 1964-US Page 4 of 13
The method of claim 1, wherein the graphene layer is electrically neutral.
The method of claim 1, further comprising: performing a second heat treatment on the composite layer and the graphene layer at a second temperature to remove the metal remaining on the graphene layer.
The method of claim 1, further comprising: performing a second heat treatment on the composite layer and the graphene layer at a second temperature to remove the composite layer. withdrawn
(NE w) The method of claim 1, wherein the performing a first heat treatment on the silicon carbide substrate over which the metal layer is deposited to form the graphene layer includes extracting carbon from the silicon carbide substrate to form the graphene layer. *** END CLAIM LISTING
canceled
(WITHDRAWN-CURRENTLY AMENDED) A graphene structure, comprising: a silicon carbide substrate; a graphene layer over the silicon carbide substrate, the graphene layer having an electrically neutral property and being a single layer; and an-inserting a composite layer, on the silicon carbide substrate, between the silicon carbide substrate and the graphene layer, the com p osite laver including a metal, and the composite laver and the grahene laver being simultaneously formed by, denositinE a metal laver over the silicon carbide substrate, and nerformin. at a first temperature. a first heat treatment on the silicon carbide substrate over which the metal laver is deposited.
-20. canceled
A graphene device, comprising the graphene structure of claim 20; and a device layer on the graphene structure. withdrawn
A method of manufacturing a graphene structure, comprising: providing a seed layer over a silicon carbide layer, the seed layer including a metal; and extracting carbon from the silicon carbide layer to form a graphene layer and a graphene support, the graphene support being configured to support the graphene layer, U.S. Application No. 13/924,953 Atty. Dkt. No. 2557S I-00 1964-US Page 6 of 13 the graphene support including the silicon carbide layer and a composite layer, and the composite layer containing the metal from the seed layer.
The method of claim 22, wherein, the providing a seed layer includes forming the seed layer over a first portion of a surface of the silicon carbide layer, the first portion being composed of more silicon than carbon.
The method of claim 22, wherein the extracting carbon includes performing a heat treatment on the silicon carbide layer over which the seed layer is provided.
The method of claim 22, further comprising: removing the composite layer, after forming the graphene layer; and forming a hydrogen layer between the silicon carbide layer and the graphene layer by using a hydrogen gas, the hydrogen layer binding to the silicon carbide layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene structure
graphene device
Materials described outside the worked examples.
silicon carbide substrate
SiC
metal layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8B is a graph of binding energy of a graphene layer when a second inserting layer is formed; [0048]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 700–800 torr | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
composite layer
metal-silicide
graphene layer
hydrogen layer
| 0–9 torr |
| — |
Pressure | 0–10 torr | — |
Temperature | 910–1000 °C | — |
Temperature | 1010–1100 °C | — |
GRAPHENE-BASED COMPOSITE STRUCTURE AND METHOD FOR MAKING THE SAME
composite layer
metal-silicide
graphene layer
hydrogen layer
| 0–9 torr |
| — |
Pressure | 0–10 torr | — |
Temperature | 910–1000 °C | — |
Temperature | 1010–1100 °C | — |
GRAPHENE-BASED COMPOSITE STRUCTURE AND METHOD FOR MAKING THE SAME
composite layer
metal-silicide
graphene layer
hydrogen layer
| 0–9 torr |
| — |
Pressure | 0–10 torr | — |
Temperature | 910–1000 °C | — |
Temperature | 1010–1100 °C | — |
GRAPHENE-BASED COMPOSITE STRUCTURE AND METHOD FOR MAKING THE SAME
composite layer
metal-silicide
graphene layer
hydrogen layer
| 0–9 torr |
| — |
Pressure | 0–10 torr | — |
Temperature | 910–1000 °C | — |
Temperature | 1010–1100 °C | — |
GRAPHENE-BASED COMPOSITE STRUCTURE AND METHOD FOR MAKING THE SAME