Patent
US 9,825,134SEMICONDUCTOR LAMINATE, METHOD FOR PRODUCING SEMICONDUCTOR LAMINATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Fuminori Mitsuhashi
US
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Patent
Atlas literature
Patent
US 9,825,134Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A layered semiconductor comprising: a base layer including a GaN substrate; and a semiconductor layer which is disposed on the base layer and is made of GaN and whose conductivity type is an n-type, wherein the semiconductor layer has an average n-type carrier concentration of 4.0 x 10 15 cm- 3 or more and 1.5 x 10 16 cm⁻³ or less in a radial direction of the substrate, and a difference between a maximum n-type carrier concentration of the semiconductor layer and a minimum n-type carrier concentration of the semiconductor layer is 1.5 x 10 15 cm⁻³ or less. Currently amended
The layered semiconductor according to Claim mm or more. Original
The layered semiconductor according to Claim drift layer of a Schottky barrier diode. Previously
- 7. Canceled
Canceled 1, wherein the base layer has a diameter of 74 1, wherein the semiconductor layer is used as a presented
Layer stacks claimed or described, ordered top of device to substrate.
layered semiconductor
Schottky barrier diode
Materials described outside the worked examples.
GaN substrate
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average n-type carrier concentration of semiconductor layer (radial direction) | 4000000000000000–15000000000000000 cm⁻³ | GaN |
difference between maximum and minimum n-type carrier concentration of semiconductor layer |
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
Patent
Atlas literature
Patent
US 9,825,134Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A layered semiconductor comprising: a base layer including a GaN substrate; and a semiconductor layer which is disposed on the base layer and is made of GaN and whose conductivity type is an n-type, wherein the semiconductor layer has an average n-type carrier concentration of 4.0 x 10 15 cm- 3 or more and 1.5 x 10 16 cm⁻³ or less in a radial direction of the substrate, and a difference between a maximum n-type carrier concentration of the semiconductor layer and a minimum n-type carrier concentration of the semiconductor layer is 1.5 x 10 15 cm⁻³ or less. Currently amended
The layered semiconductor according to Claim mm or more. Original
The layered semiconductor according to Claim drift layer of a Schottky barrier diode. Previously
- 7. Canceled
Canceled 1, wherein the base layer has a diameter of 74 1, wherein the semiconductor layer is used as a presented
Layer stacks claimed or described, ordered top of device to substrate.
layered semiconductor
Schottky barrier diode
Materials described outside the worked examples.
GaN substrate
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average n-type carrier concentration of semiconductor layer (radial direction) | 4000000000000000–15000000000000000 cm⁻³ | GaN |
difference between maximum and minimum n-type carrier concentration of semiconductor layer |
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
Patent
Atlas literature
Patent
US 9,825,134Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A layered semiconductor comprising: a base layer including a GaN substrate; and a semiconductor layer which is disposed on the base layer and is made of GaN and whose conductivity type is an n-type, wherein the semiconductor layer has an average n-type carrier concentration of 4.0 x 10 15 cm- 3 or more and 1.5 x 10 16 cm⁻³ or less in a radial direction of the substrate, and a difference between a maximum n-type carrier concentration of the semiconductor layer and a minimum n-type carrier concentration of the semiconductor layer is 1.5 x 10 15 cm⁻³ or less. Currently amended
The layered semiconductor according to Claim mm or more. Original
The layered semiconductor according to Claim drift layer of a Schottky barrier diode. Previously
- 7. Canceled
Canceled 1, wherein the base layer has a diameter of 74 1, wherein the semiconductor layer is used as a presented
Layer stacks claimed or described, ordered top of device to substrate.
layered semiconductor
Schottky barrier diode
Materials described outside the worked examples.
GaN substrate
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average n-type carrier concentration of semiconductor layer (radial direction) | 4000000000000000–15000000000000000 cm⁻³ | GaN |
difference between maximum and minimum n-type carrier concentration of semiconductor layer |
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
Patent
Atlas literature
Patent
US 9,825,134Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A layered semiconductor comprising: a base layer including a GaN substrate; and a semiconductor layer which is disposed on the base layer and is made of GaN and whose conductivity type is an n-type, wherein the semiconductor layer has an average n-type carrier concentration of 4.0 x 10 15 cm- 3 or more and 1.5 x 10 16 cm⁻³ or less in a radial direction of the substrate, and a difference between a maximum n-type carrier concentration of the semiconductor layer and a minimum n-type carrier concentration of the semiconductor layer is 1.5 x 10 15 cm⁻³ or less. Currently amended
The layered semiconductor according to Claim mm or more. Original
The layered semiconductor according to Claim drift layer of a Schottky barrier diode. Previously
- 7. Canceled
Canceled 1, wherein the base layer has a diameter of 74 1, wherein the semiconductor layer is used as a presented
Layer stacks claimed or described, ordered top of device to substrate.
layered semiconductor
Schottky barrier diode
Materials described outside the worked examples.
GaN substrate
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average n-type carrier concentration of semiconductor layer (radial direction) | 4000000000000000–15000000000000000 cm⁻³ | GaN |
difference between maximum and minimum n-type carrier concentration of semiconductor layer |
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
GaN |
GaN |
GaN |
GaN |