GRAPHENE SYNTHESIS CHAMBER AND METHOD OF SYNTHESIZING GRAPHENE BY USING THE SAME

Dong-kwan WON

Patent

Atlas literature

Patent

US 10,480,075

GRAPHENE SYNTHESIS CHAMBER AND METHOD OF SYNTHESIZING GRAPHENE BY USING THE SAME

Dong-kwan WON

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 A, if the substrate 10 is the substrate 10 a including the base 7 layer 11 and the metal thin ﬁlm layer 12 formed on the base layer 11, the base layer …

FIG. 2

FIG. 2 is a cross-sectional view illustrating a graphene synthesis chamber 100 according to an exemplary embodiment. [0055] Referring to

FIG. 3

FIG. 3 is a cross-sectional view illustrating a main heating unit 120' modiﬁed from the main heating unit 120 of the graphene synthesis chamber 100 of

FIG. 4

FIG. 4 is a cross-sectional view illustrating a graphene synthesis chamber 200 according to another exemplary embodiment. [0077] Referring to

FIG. 5

FIG. 5, the present embodiment is not limited thereto. Alternatively, the main heating unit 320 may emit not only light having a near-infrared wavelength band …

FIG. 6

FIG. 6, when temperatures of the substrate 10 and the ﬁrst and second auxiliary heating portions 331 and 332 suﬃciently increase due to light having a …

FIG. 7

FIG. 7 uses light having a near-infrared wavelength band, a temperature may be easily controlled, the substrate 10 may be heated to a temperature needed to …

FIG. 8

FIG. 8, the main heating units 720 emit light having a near-infrared wavelength band into an inner space deﬁned by the chamber case 710 that is a hexahedron. …

FIG. 9

performance graph

FIG. 9 is a graph illustrating a Raman spectrum of graphene synthesized in the graphene synthesis chamber 200 of

FIG. 10

FIG. 10.

FIG. 11

FIG. 11 is a cross-sectional view illustrating the metal thin ﬁlm 31 disposed outside the chamber case 1110 before the graphene 32 is synthesized. The metal …

FIG. 12

FIG. 12 is a cross- sectional view illustrating a graphene structure carried to the outside of the chamber case 1110 after the graphene 32 is synthesized on …

FIG. 13

FIG. 13 is a perspective view illustrating the metal thin ﬁlm 31 introduced through a metal thin ﬁlm inlet/outlet unit 1150 corresponding to a portion XIII of

FIG. 14

FIG. 14 is a perspective view illustrating the graphene 32 and the metal thin ﬁlm 31 discharged through the metal thin ﬁlm inlet/outlet unit 1150 corresponding …

FIG. 15

FIG. 15. The same elements are denoted by the same reference numerals and the following explanation will be made by focusing on the diﬀerences between the …

FIG. 16

FIG. 16.

FIG. 17

FIG. 17 is a cross-sectional view illustrating the metal thin ﬁlm 31 corresponding to a portion XVII of

FIG. 18

FIG. 18 is a cross-sectional view illustrating the graphene 32 formed on the metal thin ﬁlm 31 corresponding to a portion XVIII of

FIG. 19

FIG. 19. The same elements are denoted by the same reference numerals, and the following explanation will be made by focusing on a diﬀerence from the graphene …

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

3 independent · 6 dependent

1
Independentgraphenemetal thin filmcarbon-containing gasgraphene synthesis chamber
: A graphene synthesis method comprising: disposing a substrate including a metal thin ﬁlm in an inner space of a graphene synthesis chamber; depressurizing the inner space; supplying a gas including carbon into the inner space; and irradiating a light to the inner space to heat the substrate using a main heating unit, wherein an auxiliary heating unit comprising a graphite which absorbs the light emitted by the main heating unit, and emit radiant heat toward the substrate is disposed between the main heating unit and the substrate wherein the auxiliary heating unit comprises a ﬁrst auxiliary heating unit which faces a ﬁrst surface of the substrate, and a second auxiliary heating unit which faces a second surface, opposite to the ﬁrst surface, of the substrate, wherein each of the ﬁrst auxiliary heating unit and the second auxiliary heating unit is spaced apart from the substrate, wherein the main heating unit comprises a ﬁrst main heating unit and a second main heating unit, and wherein the ﬁrst auxiliary heating unit is disposed between the ﬁrst main heating unit and the substrate, and the second auxiliary heating unit is disposed between the second main heating AMV ENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₃₃₅₄₅ unit and the substrate. Currently amended
1. 4
  Dependent← claim 1carbon-containing gasgraphene synthesis chamber
  : The graphene synthesis method of claim 1, wherein the supplying a gas including carbon comprises: supplying the gas including carbon from a gas supply unit located at a ﬁrst side of an auxiliary space deﬁned by the ﬁrst auxiliary heating unit and the second auxiliary heating unit so that the gas including carbon ﬂows along the substrate. Currently amended
2. 6
  Dependent← claim 1graphene synthesis chamber
  : The graphene synthesis method of claim 1, wherein the irradiating a light to the inner space comp rn ses: irradiating the light so that a temperature of an auxiliary spaced deﬁned by the ﬁrst auxiliary heating unit and the second auxiliary heating unit is about 1000 degrees or more. Currently amended
3. 7
  Dependent← claim 1
  : The graphene synthesis method of claim 1, Original
4. 8
  Dependent← claim 1graphene synthesis chamber
  : The graphene synthesis method of claim 1, halogen lamp; and a window which is located on Original
5. 9
  Dependent← claim 1metal thin filmCugraphene synthesis chamber
  : The graphene synthesis method of claim 1, including carbon, supplying an inert gas and a wherein the metal thin ﬁlm comprises copper. wherein the main heating unit comprises: a path of light irradiated from the halogen lamp. further comprising before the supplying a gas non-reactive gas into the inner space. Original
2
Independent
. Canceled
3
Independent
. Canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

graphene synthesis chamber

graphenegraphene product

metal thin filmsubstrate with metal thin film

Materials

Materials described outside the worked examples.

graphene

Synthesis Product

metal thin film

Catalyst Substrate

carbon-containing gas

Process steps

Additional fabrication and treatment steps described in the patent.

Cvd Growth

Step 1

Temperature

1000°C

Process details

pressure:depressurized

substrate:substrate including metal thin film

heating method:light irradiation via main heating unit with graphite auxiliary heating unit emitting radiant heat

Characterization

Measurements and analyses referenced in the patent, with their drawing references.

ftir ir

Ftir Ir

FIG. 5, the present embodiment is not limited thereto. Alternatively, the main heating unit 320 may emit not only light having a near-infrared wavelength band …

Figure references

FIG. 5

graphenegraphene

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
electron mobility of graphene (background art)	—	graphene

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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