Patent
US 8,470,400Graphene Synthesis by Chemical Vapor Deposition
Luigi Colombo
US
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Patent
Atlas literature
Patent
US 8,470,400Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates an apparatus for synthesizing graphene using the processes of the present invention in accordance with an embodiment of the present invention;
Figure 2 is a flowchart of a method for synthesizing graphene in accordance with an embodiment of the present invention;
Figure 3 is a flowchart of an alternative method for synthesizing graphene in 10 accordance with an embodiment of the present invention; and
Figures 4A-E illustrate the domain size of graphene grown under different growth conditions using the principles of the present invention. 15 22084-P057U S Page 5 of 16 PATENT
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
84-P O 57US PATENT IN THE CLAIMS Please amend claims 1-3 and 5 as indicated below.
Materials described outside the worked examples.
graphene
copper foil
Cu
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 400–1400 °C | — |
Thickness | 10–50000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,470,400Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates an apparatus for synthesizing graphene using the processes of the present invention in accordance with an embodiment of the present invention;
Figure 2 is a flowchart of a method for synthesizing graphene in accordance with an embodiment of the present invention;
Figure 3 is a flowchart of an alternative method for synthesizing graphene in 10 accordance with an embodiment of the present invention; and
Figures 4A-E illustrate the domain size of graphene grown under different growth conditions using the principles of the present invention. 15 22084-P057U S Page 5 of 16 PATENT
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
84-P O 57US PATENT IN THE CLAIMS Please amend claims 1-3 and 5 as indicated below.
Materials described outside the worked examples.
graphene
copper foil
Cu
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 400–1400 °C | — |
Thickness | 10–50000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,470,400Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates an apparatus for synthesizing graphene using the processes of the present invention in accordance with an embodiment of the present invention;
Figure 2 is a flowchart of a method for synthesizing graphene in accordance with an embodiment of the present invention;
Figure 3 is a flowchart of an alternative method for synthesizing graphene in 10 accordance with an embodiment of the present invention; and
Figures 4A-E illustrate the domain size of graphene grown under different growth conditions using the principles of the present invention. 15 22084-P057U S Page 5 of 16 PATENT
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
84-P O 57US PATENT IN THE CLAIMS Please amend claims 1-3 and 5 as indicated below.
Materials described outside the worked examples.
graphene
copper foil
Cu
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 400–1400 °C | — |
Thickness | 10–50000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,470,400Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates an apparatus for synthesizing graphene using the processes of the present invention in accordance with an embodiment of the present invention;
Figure 2 is a flowchart of a method for synthesizing graphene in accordance with an embodiment of the present invention;
Figure 3 is a flowchart of an alternative method for synthesizing graphene in 10 accordance with an embodiment of the present invention; and
Figures 4A-E illustrate the domain size of graphene grown under different growth conditions using the principles of the present invention. 15 22084-P057U S Page 5 of 16 PATENT
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
84-P O 57US PATENT IN THE CLAIMS Please amend claims 1-3 and 5 as indicated below.
Materials described outside the worked examples.
graphene
copper foil
Cu
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 400–1400 °C | — |
Thickness | 10–50000 nm |
Related documents with shared materials, methods, properties, or citations.
methane
CH₄
hydrogen gas
H₂
silicon
Si
silicon dioxide
SiO₂
hafnium oxide
HfO₂
zirconium oxide
ZrO₂
boron nitride
BN
aluminum oxide
Al₂O₃
ethylene
C₂H₄
acetylene
C₂H₂
copper-nickel alloy
copper-cobalt alloy
copper-ruthenium alloy
| — |
Pressure | 0.01–780 Torr | — |
Duration | 0.001–10 minutes | — |
Pressure | 0.01–2 Torr | — |
Thickness | 40–60 cm | — |
Flow Rate | 1–100 sccm | — |
Duration | 0.1–60 minutes | — |
Flow Rate | 1–5000 sccm | — |
Duration | 0.001–120 seconds | — |
Flow Rate | 10–5000 sccm | — |
Duration | 1–600 seconds | — |
Flow Rate | ≤ 10 sccm | — |
Temperature | ≥ 1400 °C | — |
methane
CH₄
hydrogen gas
H₂
silicon
Si
silicon dioxide
SiO₂
hafnium oxide
HfO₂
zirconium oxide
ZrO₂
boron nitride
BN
aluminum oxide
Al₂O₃
ethylene
C₂H₄
acetylene
C₂H₂
copper-nickel alloy
copper-cobalt alloy
copper-ruthenium alloy
| — |
Pressure | 0.01–780 Torr | — |
Duration | 0.001–10 minutes | — |
Pressure | 0.01–2 Torr | — |
Thickness | 40–60 cm | — |
Flow Rate | 1–100 sccm | — |
Duration | 0.1–60 minutes | — |
Flow Rate | 1–5000 sccm | — |
Duration | 0.001–120 seconds | — |
Flow Rate | 10–5000 sccm | — |
Duration | 1–600 seconds | — |
Flow Rate | ≤ 10 sccm | — |
Temperature | ≥ 1400 °C | — |
methane
CH₄
hydrogen gas
H₂
silicon
Si
silicon dioxide
SiO₂
hafnium oxide
HfO₂
zirconium oxide
ZrO₂
boron nitride
BN
aluminum oxide
Al₂O₃
ethylene
C₂H₄
acetylene
C₂H₂
copper-nickel alloy
copper-cobalt alloy
copper-ruthenium alloy
| — |
Pressure | 0.01–780 Torr | — |
Duration | 0.001–10 minutes | — |
Pressure | 0.01–2 Torr | — |
Thickness | 40–60 cm | — |
Flow Rate | 1–100 sccm | — |
Duration | 0.1–60 minutes | — |
Flow Rate | 1–5000 sccm | — |
Duration | 0.001–120 seconds | — |
Flow Rate | 10–5000 sccm | — |
Duration | 1–600 seconds | — |
Flow Rate | ≤ 10 sccm | — |
Temperature | ≥ 1400 °C | — |
methane
CH₄
hydrogen gas
H₂
silicon
Si
silicon dioxide
SiO₂
hafnium oxide
HfO₂
zirconium oxide
ZrO₂
boron nitride
BN
aluminum oxide
Al₂O₃
ethylene
C₂H₄
acetylene
C₂H₂
copper-nickel alloy
copper-cobalt alloy
copper-ruthenium alloy
| — |
Pressure | 0.01–780 Torr | — |
Duration | 0.001–10 minutes | — |
Pressure | 0.01–2 Torr | — |
Thickness | 40–60 cm | — |
Flow Rate | 1–100 sccm | — |
Duration | 0.1–60 minutes | — |
Flow Rate | 1–5000 sccm | — |
Duration | 0.001–120 seconds | — |
Flow Rate | 10–5000 sccm | — |
Duration | 1–600 seconds | — |
Flow Rate | ≤ 10 sccm | — |
Temperature | ≥ 1400 °C | — |