Patent
US 10,928,304METHOD FOR ADJUSTING AND CONTROLLING BOUNDARY OF GRAPHENE
HAOMIN WANG
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,928,304Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a flowchart of a method for adjusting and controlling a boundary of graphene according to the present invention.
FIG. 2 illustrates a schematic view of shapes of two boundaries of graphene obtained through adjustment and control in the present invention.
FIG. 3 illustrates a schematic view of an armchair boundary, a zigzag boundary and a mixed boundary monocrystal in the present invention.
FIG. 4. It needs to be stated that the drawings provided in the following embodiments are just used for schematically describing the basic concept of the …
FIG. 5 illustrates a schematic view of a zigzag boundary monocrystal epitaxially and sequentially grown on an armchair monocrystal in the present invention.
FIG. 6 illustrates a schematic view of epitaxial graphene nano-belts on armchair and zigzag steps in the present invention. Description of component mark …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for adjusting and controlling a boundary of graphene, wherein the method comprises the following steps: 1) providing an insulating substrate and placing the insulating substrate in a growth chamber; 2) forming a step on the insulating substrate, feeding a first reaction gas into the growth chamber, the first reaction gas at least comprising carbon source gas, to form a graphene structure with a first boundary shape on a surface of the insulating substrate through controlling a flow rate of the first reaction gas; and 3) feeding a second reaction gas into the growth chamber to change the first boundary shape into a second boundary shape; wherein the first boundary shape is an armchair shape, the second boundar y shape is a zigzag shape; or the first boundary shape is a zigzag shape, the second boundar y shape is an armchair shape,,. Currently amended
(Previously amended) The method for adjusting and controlling the boundary of graphene according to claim 1, wherein in step 1), the insulating substrate is an h-BN thin film substrate, the h-BN is selected from h-BN block monocrystal, and h-BN thin film substrate obtained through mechanical stripping, or h-BN thin film substrate obtained through a chemical vapor deposition method. Currently amended
(Previously amended) The method for adjusting and controlling the boundary of graphene according to claim 1, wherein in step 2), the carbon source gas is acetylene, a flow rate of acetylene is controlled to be 1-8sc c m to obtain the graphene structure having the first boundary shape of an armchair. Currently amended
(Previously amended) The method for adjusting and controlling the boundary of graphene according to claim 1, wherein in step 2), the first reaction gas further comprises catalytic gas, and the graphene structure having the first boundary shape on the surface of the insulating substrate is formed by controlling a flow rate ratio of the catalytic gas to the carbon source gas. Currently amended
(Previously amended) The method for adjusting and controlling the boundary of graphene according to claim 1, wherein in step 2), the graphene structure is prepared by chemical vapor deposition method, wherein growth temperature is 1100-1400 ° C, internal pressure of the growth chamber is 1-2 0 Pa and growth time is 1 0 -1800s. Currently amended
Canceled
Canceled
The method for adjusting and controlling the boundary of graphene according to claim 91, wherein the first reaction gas which is suitable for growth of the zigzag boundary comprises catalytic gas and carbon source gas, and the flow rate ratio of the catalytic gas to the carbon source gas is equal to 1:1; and the second reaction gas which is suitable for growth of the armchair boundary comprises catalytic gas and carbon source gas, and the flow rate ratio of the catalytic gas to the carbon source gas is greater than 8:1 or smaller than or equal to 1:8. Currently amended
Canceled
The method for adjusting and controlling the boundary of graphene according to claim 44 1, wherein the method for forming the step comprises one of mechanical stripping, chemical etching, electron beam lithography and ultraviolet exposure. Currently amended
The method for adjusting and controlling the boundary of graphene according to claim 441, wherein the shape of the step is consistent with the first boundary shape. Currently amended
The method for adjusting and controlling the boundary of graphene according to claim 44 1, wherein width of the graphene structure is controlled by controlling the growth time of the graphene structure and the flow rate of the first reaction gas. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
graphene structure with controlled boundary on insulating substrate
Materials described outside the worked examples.
graphene
h-BN substrate
h-BN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene nanoribbon width | ≤ 100 nm | graphene nanoribbon |
graphene nanoribbon length | ≥ 20 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,928,304Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a flowchart of a method for adjusting and controlling a boundary of graphene according to the present invention.
FIG. 2 illustrates a schematic view of shapes of two boundaries of graphene obtained through adjustment and control in the present invention.
FIG. 3 illustrates a schematic view of an armchair boundary, a zigzag boundary and a mixed boundary monocrystal in the present invention.
FIG. 4. It needs to be stated that the drawings provided in the following embodiments are just used for schematically describing the basic concept of the …
FIG. 5 illustrates a schematic view of a zigzag boundary monocrystal epitaxially and sequentially grown on an armchair monocrystal in the present invention.
FIG. 6 illustrates a schematic view of epitaxial graphene nano-belts on armchair and zigzag steps in the present invention. Description of component mark …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for adjusting and controlling a boundary of graphene, wherein the method comprises the following steps: 1) providing an insulating substrate and placing the insulating substrate in a growth chamber; 2) forming a step on the insulating substrate, feeding a first reaction gas into the growth chamber, the first reaction gas at least comprising carbon source gas, to form a graphene structure with a first boundary shape on a surface of the insulating substrate through controlling a flow rate of the first reaction gas; and 3) feeding a second reaction gas into the growth chamber to change the first boundary shape into a second boundary shape; wherein the first boundary shape is an armchair shape, the second boundar y shape is a zigzag shape; or the first boundary shape is a zigzag shape, the second boundar y shape is an armchair shape,,. Currently amended
(Previously amended) The method for adjusting and controlling the boundary of graphene according to claim 1, wherein in step 1), the insulating substrate is an h-BN thin film substrate, the h-BN is selected from h-BN block monocrystal, and h-BN thin film substrate obtained through mechanical stripping, or h-BN thin film substrate obtained through a chemical vapor deposition method. Currently amended
(Previously amended) The method for adjusting and controlling the boundary of graphene according to claim 1, wherein in step 2), the carbon source gas is acetylene, a flow rate of acetylene is controlled to be 1-8sc c m to obtain the graphene structure having the first boundary shape of an armchair. Currently amended
(Previously amended) The method for adjusting and controlling the boundary of graphene according to claim 1, wherein in step 2), the first reaction gas further comprises catalytic gas, and the graphene structure having the first boundary shape on the surface of the insulating substrate is formed by controlling a flow rate ratio of the catalytic gas to the carbon source gas. Currently amended
(Previously amended) The method for adjusting and controlling the boundary of graphene according to claim 1, wherein in step 2), the graphene structure is prepared by chemical vapor deposition method, wherein growth temperature is 1100-1400 ° C, internal pressure of the growth chamber is 1-2 0 Pa and growth time is 1 0 -1800s. Currently amended
Canceled
Canceled
The method for adjusting and controlling the boundary of graphene according to claim 91, wherein the first reaction gas which is suitable for growth of the zigzag boundary comprises catalytic gas and carbon source gas, and the flow rate ratio of the catalytic gas to the carbon source gas is equal to 1:1; and the second reaction gas which is suitable for growth of the armchair boundary comprises catalytic gas and carbon source gas, and the flow rate ratio of the catalytic gas to the carbon source gas is greater than 8:1 or smaller than or equal to 1:8. Currently amended
Canceled
The method for adjusting and controlling the boundary of graphene according to claim 44 1, wherein the method for forming the step comprises one of mechanical stripping, chemical etching, electron beam lithography and ultraviolet exposure. Currently amended
The method for adjusting and controlling the boundary of graphene according to claim 441, wherein the shape of the step is consistent with the first boundary shape. Currently amended
The method for adjusting and controlling the boundary of graphene according to claim 44 1, wherein width of the graphene structure is controlled by controlling the growth time of the graphene structure and the flow rate of the first reaction gas. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
graphene structure with controlled boundary on insulating substrate
Materials described outside the worked examples.
graphene
h-BN substrate
h-BN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene nanoribbon width | ≤ 100 nm | graphene nanoribbon |
graphene nanoribbon length | ≥ 20 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,928,304Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a flowchart of a method for adjusting and controlling a boundary of graphene according to the present invention.
FIG. 2 illustrates a schematic view of shapes of two boundaries of graphene obtained through adjustment and control in the present invention.
FIG. 3 illustrates a schematic view of an armchair boundary, a zigzag boundary and a mixed boundary monocrystal in the present invention.
FIG. 4. It needs to be stated that the drawings provided in the following embodiments are just used for schematically describing the basic concept of the …
FIG. 5 illustrates a schematic view of a zigzag boundary monocrystal epitaxially and sequentially grown on an armchair monocrystal in the present invention.
FIG. 6 illustrates a schematic view of epitaxial graphene nano-belts on armchair and zigzag steps in the present invention. Description of component mark …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for adjusting and controlling a boundary of graphene, wherein the method comprises the following steps: 1) providing an insulating substrate and placing the insulating substrate in a growth chamber; 2) forming a step on the insulating substrate, feeding a first reaction gas into the growth chamber, the first reaction gas at least comprising carbon source gas, to form a graphene structure with a first boundary shape on a surface of the insulating substrate through controlling a flow rate of the first reaction gas; and 3) feeding a second reaction gas into the growth chamber to change the first boundary shape into a second boundary shape; wherein the first boundary shape is an armchair shape, the second boundar y shape is a zigzag shape; or the first boundary shape is a zigzag shape, the second boundar y shape is an armchair shape,,. Currently amended
(Previously amended) The method for adjusting and controlling the boundary of graphene according to claim 1, wherein in step 1), the insulating substrate is an h-BN thin film substrate, the h-BN is selected from h-BN block monocrystal, and h-BN thin film substrate obtained through mechanical stripping, or h-BN thin film substrate obtained through a chemical vapor deposition method. Currently amended
(Previously amended) The method for adjusting and controlling the boundary of graphene according to claim 1, wherein in step 2), the carbon source gas is acetylene, a flow rate of acetylene is controlled to be 1-8sc c m to obtain the graphene structure having the first boundary shape of an armchair. Currently amended
(Previously amended) The method for adjusting and controlling the boundary of graphene according to claim 1, wherein in step 2), the first reaction gas further comprises catalytic gas, and the graphene structure having the first boundary shape on the surface of the insulating substrate is formed by controlling a flow rate ratio of the catalytic gas to the carbon source gas. Currently amended
(Previously amended) The method for adjusting and controlling the boundary of graphene according to claim 1, wherein in step 2), the graphene structure is prepared by chemical vapor deposition method, wherein growth temperature is 1100-1400 ° C, internal pressure of the growth chamber is 1-2 0 Pa and growth time is 1 0 -1800s. Currently amended
Canceled
Canceled
The method for adjusting and controlling the boundary of graphene according to claim 91, wherein the first reaction gas which is suitable for growth of the zigzag boundary comprises catalytic gas and carbon source gas, and the flow rate ratio of the catalytic gas to the carbon source gas is equal to 1:1; and the second reaction gas which is suitable for growth of the armchair boundary comprises catalytic gas and carbon source gas, and the flow rate ratio of the catalytic gas to the carbon source gas is greater than 8:1 or smaller than or equal to 1:8. Currently amended
Canceled
The method for adjusting and controlling the boundary of graphene according to claim 44 1, wherein the method for forming the step comprises one of mechanical stripping, chemical etching, electron beam lithography and ultraviolet exposure. Currently amended
The method for adjusting and controlling the boundary of graphene according to claim 441, wherein the shape of the step is consistent with the first boundary shape. Currently amended
The method for adjusting and controlling the boundary of graphene according to claim 44 1, wherein width of the graphene structure is controlled by controlling the growth time of the graphene structure and the flow rate of the first reaction gas. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
graphene structure with controlled boundary on insulating substrate
Materials described outside the worked examples.
graphene
h-BN substrate
h-BN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene nanoribbon width | ≤ 100 nm | graphene nanoribbon |
graphene nanoribbon length | ≥ 20 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,928,304Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a flowchart of a method for adjusting and controlling a boundary of graphene according to the present invention.
FIG. 2 illustrates a schematic view of shapes of two boundaries of graphene obtained through adjustment and control in the present invention.
FIG. 3 illustrates a schematic view of an armchair boundary, a zigzag boundary and a mixed boundary monocrystal in the present invention.
FIG. 4. It needs to be stated that the drawings provided in the following embodiments are just used for schematically describing the basic concept of the …
FIG. 5 illustrates a schematic view of a zigzag boundary monocrystal epitaxially and sequentially grown on an armchair monocrystal in the present invention.
FIG. 6 illustrates a schematic view of epitaxial graphene nano-belts on armchair and zigzag steps in the present invention. Description of component mark …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for adjusting and controlling a boundary of graphene, wherein the method comprises the following steps: 1) providing an insulating substrate and placing the insulating substrate in a growth chamber; 2) forming a step on the insulating substrate, feeding a first reaction gas into the growth chamber, the first reaction gas at least comprising carbon source gas, to form a graphene structure with a first boundary shape on a surface of the insulating substrate through controlling a flow rate of the first reaction gas; and 3) feeding a second reaction gas into the growth chamber to change the first boundary shape into a second boundary shape; wherein the first boundary shape is an armchair shape, the second boundar y shape is a zigzag shape; or the first boundary shape is a zigzag shape, the second boundar y shape is an armchair shape,,. Currently amended
(Previously amended) The method for adjusting and controlling the boundary of graphene according to claim 1, wherein in step 1), the insulating substrate is an h-BN thin film substrate, the h-BN is selected from h-BN block monocrystal, and h-BN thin film substrate obtained through mechanical stripping, or h-BN thin film substrate obtained through a chemical vapor deposition method. Currently amended
(Previously amended) The method for adjusting and controlling the boundary of graphene according to claim 1, wherein in step 2), the carbon source gas is acetylene, a flow rate of acetylene is controlled to be 1-8sc c m to obtain the graphene structure having the first boundary shape of an armchair. Currently amended
(Previously amended) The method for adjusting and controlling the boundary of graphene according to claim 1, wherein in step 2), the first reaction gas further comprises catalytic gas, and the graphene structure having the first boundary shape on the surface of the insulating substrate is formed by controlling a flow rate ratio of the catalytic gas to the carbon source gas. Currently amended
(Previously amended) The method for adjusting and controlling the boundary of graphene according to claim 1, wherein in step 2), the graphene structure is prepared by chemical vapor deposition method, wherein growth temperature is 1100-1400 ° C, internal pressure of the growth chamber is 1-2 0 Pa and growth time is 1 0 -1800s. Currently amended
Canceled
Canceled
The method for adjusting and controlling the boundary of graphene according to claim 91, wherein the first reaction gas which is suitable for growth of the zigzag boundary comprises catalytic gas and carbon source gas, and the flow rate ratio of the catalytic gas to the carbon source gas is equal to 1:1; and the second reaction gas which is suitable for growth of the armchair boundary comprises catalytic gas and carbon source gas, and the flow rate ratio of the catalytic gas to the carbon source gas is greater than 8:1 or smaller than or equal to 1:8. Currently amended
Canceled
The method for adjusting and controlling the boundary of graphene according to claim 44 1, wherein the method for forming the step comprises one of mechanical stripping, chemical etching, electron beam lithography and ultraviolet exposure. Currently amended
The method for adjusting and controlling the boundary of graphene according to claim 441, wherein the shape of the step is consistent with the first boundary shape. Currently amended
The method for adjusting and controlling the boundary of graphene according to claim 44 1, wherein width of the graphene structure is controlled by controlling the growth time of the graphene structure and the flow rate of the first reaction gas. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
graphene structure with controlled boundary on insulating substrate
Materials described outside the worked examples.
graphene
h-BN substrate
h-BN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene nanoribbon width | ≤ 100 nm | graphene nanoribbon |
graphene nanoribbon length | ≥ 20 nm |
Related documents with shared materials, methods, properties, or citations.
carbon source gas
acetylene
C₂H₂
methane
CH₄
ethylene
C₂H₄
silane
SiH₄
graphene nanoribbon
graphene nanoribbon thickness | 1–10 atomic layers | graphene nanoribbon |
Temperature | 700–800 °C | — |
Pressure | 500–1000 Pa | — |
Temperature | 1100–1400 °C | — |
Temperature | 1200–1300 °C | — |
Pressure | 5–15 Pa | — |
Tunable Luttinger liquid and correlated insulating states in one-dimensional moiré superlattices
carbon source gas
acetylene
C₂H₂
methane
CH₄
ethylene
C₂H₄
silane
SiH₄
graphene nanoribbon
graphene nanoribbon thickness | 1–10 atomic layers | graphene nanoribbon |
Temperature | 700–800 °C | — |
Pressure | 500–1000 Pa | — |
Temperature | 1100–1400 °C | — |
Temperature | 1200–1300 °C | — |
Pressure | 5–15 Pa | — |
Tunable Luttinger liquid and correlated insulating states in one-dimensional moiré superlattices
carbon source gas
acetylene
C₂H₂
methane
CH₄
ethylene
C₂H₄
silane
SiH₄
graphene nanoribbon
graphene nanoribbon thickness | 1–10 atomic layers | graphene nanoribbon |
Temperature | 700–800 °C | — |
Pressure | 500–1000 Pa | — |
Temperature | 1100–1400 °C | — |
Temperature | 1200–1300 °C | — |
Pressure | 5–15 Pa | — |
Tunable Luttinger liquid and correlated insulating states in one-dimensional moiré superlattices
carbon source gas
acetylene
C₂H₂
methane
CH₄
ethylene
C₂H₄
silane
SiH₄
graphene nanoribbon
graphene nanoribbon thickness | 1–10 atomic layers | graphene nanoribbon |
Temperature | 700–800 °C | — |
Pressure | 500–1000 Pa | — |
Temperature | 1100–1400 °C | — |
Temperature | 1200–1300 °C | — |
Pressure | 5–15 Pa | — |
Tunable Luttinger liquid and correlated insulating states in one-dimensional moiré superlattices