GRAPHENE SHEET AND METHOD FOR PRODUCING THE SAME

Hiroki Ago

Patent

Atlas literature

Patent

US 8,697,230

GRAPHENE SHEET AND METHOD FOR PRODUCING THE SAME

Hiroki Ago

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

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FIG. 49

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

17 independent · 22 dependent

2
Dependent← claim 1graphene sheet
The graphene sheet accord in g to claim 1, where in an in -plane mis-orientation of 6-membered r in gs is such that 90 % or more of the doma in s have orientations a li gned with in ±50 or less
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Dependent← claim 1graphene sheet
The graphene sheet accord in g to claim 1, where in an m -plane mis-orientation of 6-membered r in gs is such that 90 % or more of the doma in s have orientations a li gned with in ±100 or less SVG 13393249.09-09-2013.HLE₄DWXRPXXIFW3.CLM₇614884.16.301.1529.2170.1660.svg 0.437 6.23 Graph Black and white
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Dependent← claim 1graphene sheet
The graphene sheet accord in g to claim 1, where in a proportion of graphene that has the same number of layers is 90 % or more
1. 6
  Dependent← claim 5single layer graphene
  The graphene sheet accord in g to claim 5, where in a proportion of s in gle layer graphene is 90 % or more
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Dependent← claim 1single layer graphene
The graphene sheet accord in g to claim 1, where in a proportion of sin gle layer graphene is % or more
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Dependent← claim 1two-layer graphene
The graphene sheet accord in g to claim 1, where in a proportion of two-layer graphene is 50 % or more 2 SVG 13393249.09-09-2013.HLE₄DWXRPXXIFW3.CLM₇614885.2.1736.201.2249.275.svg 0.247 1.71 Graph Black and white Hiroki AGO e t al Sep t ember 9, 2013
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Dependent← claim 1three-layer graphene
The graphene sheet accord in g to claim 1, where in a proportion of three-layer graphene is % or more
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Dependent← claim 1graphene sheetgraphene sheet composite on substrate
A composite of a graphene sheet comp nsin g the graphene sheet accord in g to claim 1 that is transferred to a substrate, and hav in g a size of from 10 nm 2 to 1 m 2
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Dependent← claim 1graphene sheetepitaxial metal filmgraphene/metal film composite
A composite of a graphene sheet comp nsin g a metal ﬁlm, and the graphene sheet accord in g to claim 1 that is grown on a surface of the metal ﬁlm
1. 13
  Dependent← claim 11graphene sheetepitaxial metal filmgraphene/metal film composite
  The composite of a graphene sheet accord in g to claim 11, where in a LEED (low energy electron diﬀraction) image of the composite conta inin g the graphene sheet has six equally spaced diﬀraction spots
2. 14
  Dependent← claim 11graphene sheetepitaxial metal filmgraphene/metal film composite
  The composite of a graphene sheet accord in g to claim 11, where in a LEED image of the composite conta inin g the graphene sheet has six equally spaced diﬀraction spots and a n ng diﬀraction pattern hav ing in tensity that is locally dist ri buted around the center of spots
3. 15
  Dependent← claim 11graphene sheetepitaxial metal filmgraphene/metal film composite
  The composite of a graphene sheet accord in g to claim 11, where in a LEED image of the composite conta inin g the graphene sheet has six equally spaced diﬀraction spots and a n ng diﬀraction pattern that is locally dist ri buted to twelve spots 16-21.
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Dependent← claim 1graphene sheetepitaxial metal filmsingle crystal substrategraphene/epitaxial metal film/single crystal substrate composite
A composite of a graphene sheet comp nsin g a s in gle crystal substrate, an epitaxial metal ﬁlm that is formed on the s in gle crystal substrate, and the graphene sheet accord in g to claim 1 that is grown on a surface of the metal ﬁlm
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Independentgraphene sheetepitaxial metal filmsingle crystal substrate
A method for produc in g a graphene sheet, comp risin g a step of grow in g a graphene sheet by mak in g a carbon material te- contact with a surface of an epitaxial metal ﬁlm that is formed on a surface of a s in gle crystal substrate selected from the group consist ing of s app hire, magnesium dioxide, quartz, lantha n um alum in ate and tita ni um dioxide, where in the g raphene sheet consists of gr a phene doma ins, the doma in s each have an area from 0 000001 tm2 to 100,000 mm 2, and orientations of 6-membered r ims in the doma in s are averagely a lig ned in a s ingle direction over the gr a phene sheet
1. 23
  Dependent← claim 22graphene sheetepitaxial metal filmsingle crystal substrate
  The method for produc in g a graphene sheet accord in g to claim 22, where in the grphene sheet is grown on the entire sufae of the epitaxial metal ﬁlm that -is- made in contact with the carbon mfatena is formed b y sputte ng at a high temperature or with a warmed substrate and is oriented in the direction of the s ingle crystal substrate
2. 24
  Dependent← claim 22single crystal substrate
  The method for produc in g a graphene sheet accord in g to claim 22, where in t t ig ade in cnact with the carbon matenal the s ing le crystal substrate is selected from the group consist ing of a c-plane (0001) of s app hire, an a-plane (11-20) of sap p hire, an r-plane (1- 102) of s app hire, a (100) plane of magnesium dioxide, a (110) plane of magnesium dioxide, and a (111) plane of magnesium dioxide 25-30.
3. 31
  Dependent← claim 22graphene sheetepitaxial metal film
  The method for produc in g a graphene sheet accord in g to -c1a+m-34 claim 22, where in a LE E D (low energy electron diﬀraction) image of the graphene sheet and a composite conta inin g the metal ﬁlm have six equally spaced diﬀraction spots
4. 32
  Dependent← claim 22graphene sheetepitaxial metal film
  The method for produc in g a graphene sheet accord in g to -cIa+m-3Q claim 22, where in a LE E D image of the substrate hav in g the graphene sheet formed thereon has 4 SVG 13393249.09-09-2013.HLE₄DWXRPXXIFW3.CLM₇614887.2.1736.201.2249.275.svg 0.247 1.71 Graph Black and white Hiroki AGO e t al Sep t ember 9, 2013 six equally spaced diﬀraction spots and a n ng diﬀraction pattern hav ing in tensity that is locally dist n buted around the center of spots
5. 33
  Dependent← claim 22graphene sheetepitaxial metal film
  The method for produc in g a graphene sheet accord in g to -m-aim-30 claim 22, where in a LEED image of the substrate hav in g the graphene sheet formed thereon has a n ng diﬀraction pattern that is locally dist ri buted to twelve spots 34-36.
6. 37
  Dependent← claim 22graphene sheetepitaxial metal film
  The method for produc in g a graphene sheet accord in g to claim 22, where in the graphene sheet is grown on the epitaxial metal ﬁlm by chemical vapor deposition (CV D) under a pressure of from the atmosphe n c pressure to a reduced pressure by feed ing carbon-conta inin g molecules in a gaseous state
7. 38
  Dependent← claim 22graphene sheetepitaxial metal filmsingle crystal substrate
  The method for produc in g a graphene sheet accord in g to e laim 3- claim 22, where in the substrate is subjected to hydrogen annea li ng at a temperature lower than a temperature upon synthesis of the graphene sheet, before synthesis of the graphene sheet
8. 39
  Dependent← claim 22graphene sheetepitaxial metal film
  The method for produc in g a graphene sheet accord in g to claim 22, where in an orga nic polymer ﬁlm is formed on the surface of the epitaxial metal ﬁlm, and then the orga nic polymer is thermally decomposed in vacuum, thereby grow in g the graphene sheet
9. 40
  Dependent← claim 22graphene sheetepitaxial metal film
  The method for produc in g a graphene sheet accord in g to claim 22, where in the graphene sheet is grown on the surface of the epitaxial metal ﬁlm, and then the graphene sheet is separated therefrom by an acid treatment or a method uti lizin g a diﬀerence in reduction potential of transition metals previously presented
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Device structures

Layer stacks claimed or described, ordered top of device to substrate.

graphene sheet composite on substrate

graphene sheetgraphene

substratesubstrate

graphene/metal film composite

graphene sheetgraphene

epitaxial metal filmmetal film

graphene/epitaxial metal film/single crystal substrate composite

graphene sheet

Materials

Materials described outside the worked examples.

graphene sheet

Claimed Graphene Sheet

single layer graphene

Claimed Graphene Layer Type

Process steps

Additional fabrication and treatment steps described in the patent.

Cvd Growth

Step 1

Process details

pressure:atmospheric to reduced pressure

carbon source:carbon-containing molecules in gaseous state

pre treatment:hydrogen annealing at temperature lower than synthesis temperature

Materials:

Why these are connected

Related documents with shared materials, methods, properties, or citations.

GRAPHENE SHEET AND METHOD FOR PRODUCING THE SAME | Matter42 Literature