OF INVENTION

Hideki Matsubara

Patent

Atlas literature

Patent

US 8,633,087

OF INVENTION

Hideki Matsubara

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 2

FIG. 3

FIG. 4

FIG. 5

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

112
Dependent← claim 1GaNsupport substrateGaN-based semiconductor layerGaN-based semiconductor device
050: 9120050 CLAIMS 1. A method of manufacturing a GaN-based semiconductor device comprising the steps of: 5 preparing a composite substrate (1) including: a support substrate (10) having a thermal expansion coeﬃcient at a ratio of not less than 0.8 and not more than 1.2 relative to a thermal expansion coeﬃcient of GaN; and a GaN layer (21) bonded to said support substrate (10), using an ion implantation separation method; growing at least one GaN-based semiconductor layer (40) on said GaN layer 10 (21) of said composite substrate (1); and removing said support substrate (10) of said composite substrate (1) by dissolving said support substrate (10).

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN-based semiconductor device

GaN-based semiconductor layerGaN based semiconductor layer

GaNGaN layer

support substratesupport substrate

Materials

Materials described outside the worked examples.

GaN

Semiconductor Layer And Substrate Layer

support substrate

Support Substrate

Process steps

Additional fabrication and treatment steps described in the patent.

Ion Implantation Separation

Step 1

Process details

ions:hydrogen, helium

description:Ions with low mass number implanted into GaN substrate to form ion implantation region; vaporized by heat treatment to separate thin GaN layer from GaN substrate

Materials:GaN

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
GaN thermal expansion coefficient	0.000006 °C⁻¹	GaN
Mo substrate thermal expansion coefficient	0.000006 °C⁻¹

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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