Patent
US 8,921,8243-DIMENSIONAL GRAPHENE STRUCTURE AND PROCESS FOR PREPARING AND TRANSFERRING THE SAME
Hyeon-jin Shin
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,921,824Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a substrate according to example embodiments; [0032]
FIGS. 2A and 2B respectively illustrate a substrate where a pattern is formed according to example embodiments and a cross section thereof; [0033]
FIGS. 3A and 3B respectively illustrate a substrate where a three-dimensional graphene structure is formed according to example embodiments and a cross section …
FIGS. 4A and 4B are a schematic diagram and a cross-sectional view illustrating a state in which a gas is injected between a graphene structure and a substrate …
FIGS. 5A and 5B respectively illustrate a substrate on which an adhesive tape is bonded to graphene according to example embodiments and a cross section …
FIGS. 6A and 6B respectively illustrate a three-dimensional graphene structure transferred to an insulating film according to example embodiments and a cross …
FIG. 7 is an SEM image of a SiC pattern wafer obtained from Example 1; [0038]
FIG. 8 is an SEM image of a three-dimensional graphene structure transferred to a silicon oxide film; [0039]
FIG. 9 is a magnified diagram of an area ' A' of
FIG. 10 is a magnified diagram of an area ' B' of
FIG. 11; [0043]FI G. 13 illustrates a certain area of a three-dimensional graphene structure obtained from Example 1; and [0044]
FIG. 12 is a magnified diagram of an area marked by a quadrangle of
FIG. 13.
FIG. 14 illustrates a Raman spectrum of areas ' a' to ' d' illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A three-dimensional graphene structure, comprising: at least one layer of graphene, wherein the at least one layer of graphene has a protruding portion and a non-protruding portion, and the protruding portion and the non-protruding portion are connected to form a periodically repeated three-dimensional shap e, and wherein a protruding end of the protruding portion is closed.
The three-dimensional graphene structure of claim 1, wherein, the three-dimencion-- c protrudin g portion includes at least one of selected from a convex part and a concave part, the convex part and the concave part are shaped in the form of one selected from a hemisphere, a cylinder, and a bowl, and an inner part of the protruding portion is hollow.
The three-dimensional graphene structure of claim 1, wherein, the three-dimensional shape has a size of about 0.1 p m to about 100 pm, and the three-dimensional shape has a pitch of about 0.1 p m to about 100 pm.
The three-dimensional graphene structure of claim 1, wherein the three-dimensional shape has a height or a depth of about 10 nm to about 10 pm.
The three-dimensional graphene structure of claim 1, further comprising a plurality of layers of the graphene.
(ORIGINAL) An electronic device, comprising: the three-dimensional graphene structure according to claim 1. U.S. Application No. 13/437,140 Atty. Dkt. No. 2557S I -001731-US Page of 9
(WITHDRAWN- CURRENTLY AMENDED) A method of manufacturing a three-dimensional graphene structure, comprising: SVG 13437140.06-09-2014.HWI₁₁₅₀₆PXXIFW4.CLM19795313.3.61.135.2184.193.svg 0.193 7.077 Graph Black and white SVG 13437140.06-09-2014.HWI₁₁₅₀₆PXXIFW4.CLM19795313.5.1401.202.2185.299.svg 0.323 2.613 Graph Black and white forming a pattern having a periodically repeated three-dimensional shape on at least one surface of a substrate; and forming the three-dimensional graphene structure having the periodically repeated three-dimensional shape of the pattern by growing graphene on the substrate on which the pattern is formed, wherein the periodically repeated three-dimensional shape has a protruding portion and a non-protruding portion, which are connected with each other, and a protruding end of the protruding portion is closed.
The method of claim 6, wherein the substrate is a SiC wafer. withdrawn
The method of claim 6, wherein the graphene is epitaxial graphene. withdrawn
(WITHDRAWN) The method of claim 6, wherein the pattern is obtained by photolithography. SVG 13437140.06-09-2014.HWI₁₁₅₀₆PXXIFW4.CLM19795313.22.429.1821.2253.1874.svg 0.177 6.08 Graph Black and white the pattern is a repetition of at least one of a convex part and a concave part shaped in the form of one selected from a hemisphere, a cylinder, and a bowl, and the pattern is hollow. withdrawn
(WITHDRAWN) The method of claim 6, wherein growing the graphene includes performing a heat treatment at a temperature of about 1,000 * C to about 2,000 * C in an inert atmosphere for about one minute to about one hour. withdrawn
The method of claim 6, wherein the pattern is formed on a graphitized catalyst metal on the substrate. withdrawn
(WITHDRAWN) The method of claim 6, wherein the substrate is a graphitized catalyst metal. withdrawn
The method of claim 6, further comprising supplying a separate carbon source when growing the graphene. U.S. Application No. 13/437,140 Atty. Dkt. No. 2557S I -001731-US Page 4 of 9 withdrawn
A method of transferring a three-dimensional graphene structure, comprising: reducing a connection strength between the three-dimensional graphene structure manufactured according to the method of claim 6 and the substrate by injecting a gas therebetween; separating the three-dimensional graphene structure from the substrate by bonding the three-dimensional graphene structure to an adhesive support; combining the three-dimensional graphene structure with an insulating substrate; and removing the adhesive support. withdrawn
A three-dimensional graphene structure, comprising: a sheet of graphene having a first set of carbon atoms extending along a first plane a n d a second set of carbons extending along a second plane substantially parallel to the first plane, wherein the first set of carbon atoms are bonded to the second set of carbon atoms, the sheet of graphene has a protruding portion and a nonprotruding portion, and the protruding portion and the non-protruding portion are connected to form a periodically repeated three-dimensional shap e, and wherein a protruding end of the protruding portion is closed.
The three-dimensional graphene structure of claim 23, wherein, the first set of the carbon atoms collectively form the non-protruding portion, the second set of the carbon atoms collectively form the protruding portion, and the first. plane and the second plane are different.
Layer stacks claimed or described, ordered top of device to substrate.
three-dimensional graphene structure
electronic device with three-dimensional graphene structure
Materials described outside the worked examples.
graphene
SiC wafer
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is an SEM image of a SiC pattern wafer obtained from Example 1; [0038]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 50–1000 torr | — |
Pressure | 100–700 torr |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,921,824Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a substrate according to example embodiments; [0032]
FIGS. 2A and 2B respectively illustrate a substrate where a pattern is formed according to example embodiments and a cross section thereof; [0033]
FIGS. 3A and 3B respectively illustrate a substrate where a three-dimensional graphene structure is formed according to example embodiments and a cross section …
FIGS. 4A and 4B are a schematic diagram and a cross-sectional view illustrating a state in which a gas is injected between a graphene structure and a substrate …
FIGS. 5A and 5B respectively illustrate a substrate on which an adhesive tape is bonded to graphene according to example embodiments and a cross section …
FIGS. 6A and 6B respectively illustrate a three-dimensional graphene structure transferred to an insulating film according to example embodiments and a cross …
FIG. 7 is an SEM image of a SiC pattern wafer obtained from Example 1; [0038]
FIG. 8 is an SEM image of a three-dimensional graphene structure transferred to a silicon oxide film; [0039]
FIG. 9 is a magnified diagram of an area ' A' of
FIG. 10 is a magnified diagram of an area ' B' of
FIG. 11; [0043]FI G. 13 illustrates a certain area of a three-dimensional graphene structure obtained from Example 1; and [0044]
FIG. 12 is a magnified diagram of an area marked by a quadrangle of
FIG. 13.
FIG. 14 illustrates a Raman spectrum of areas ' a' to ' d' illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A three-dimensional graphene structure, comprising: at least one layer of graphene, wherein the at least one layer of graphene has a protruding portion and a non-protruding portion, and the protruding portion and the non-protruding portion are connected to form a periodically repeated three-dimensional shap e, and wherein a protruding end of the protruding portion is closed.
The three-dimensional graphene structure of claim 1, wherein, the three-dimencion-- c protrudin g portion includes at least one of selected from a convex part and a concave part, the convex part and the concave part are shaped in the form of one selected from a hemisphere, a cylinder, and a bowl, and an inner part of the protruding portion is hollow.
The three-dimensional graphene structure of claim 1, wherein, the three-dimensional shape has a size of about 0.1 p m to about 100 pm, and the three-dimensional shape has a pitch of about 0.1 p m to about 100 pm.
The three-dimensional graphene structure of claim 1, wherein the three-dimensional shape has a height or a depth of about 10 nm to about 10 pm.
The three-dimensional graphene structure of claim 1, further comprising a plurality of layers of the graphene.
(ORIGINAL) An electronic device, comprising: the three-dimensional graphene structure according to claim 1. U.S. Application No. 13/437,140 Atty. Dkt. No. 2557S I -001731-US Page of 9
(WITHDRAWN- CURRENTLY AMENDED) A method of manufacturing a three-dimensional graphene structure, comprising: SVG 13437140.06-09-2014.HWI₁₁₅₀₆PXXIFW4.CLM19795313.3.61.135.2184.193.svg 0.193 7.077 Graph Black and white SVG 13437140.06-09-2014.HWI₁₁₅₀₆PXXIFW4.CLM19795313.5.1401.202.2185.299.svg 0.323 2.613 Graph Black and white forming a pattern having a periodically repeated three-dimensional shape on at least one surface of a substrate; and forming the three-dimensional graphene structure having the periodically repeated three-dimensional shape of the pattern by growing graphene on the substrate on which the pattern is formed, wherein the periodically repeated three-dimensional shape has a protruding portion and a non-protruding portion, which are connected with each other, and a protruding end of the protruding portion is closed.
The method of claim 6, wherein the substrate is a SiC wafer. withdrawn
The method of claim 6, wherein the graphene is epitaxial graphene. withdrawn
(WITHDRAWN) The method of claim 6, wherein the pattern is obtained by photolithography. SVG 13437140.06-09-2014.HWI₁₁₅₀₆PXXIFW4.CLM19795313.22.429.1821.2253.1874.svg 0.177 6.08 Graph Black and white the pattern is a repetition of at least one of a convex part and a concave part shaped in the form of one selected from a hemisphere, a cylinder, and a bowl, and the pattern is hollow. withdrawn
(WITHDRAWN) The method of claim 6, wherein growing the graphene includes performing a heat treatment at a temperature of about 1,000 * C to about 2,000 * C in an inert atmosphere for about one minute to about one hour. withdrawn
The method of claim 6, wherein the pattern is formed on a graphitized catalyst metal on the substrate. withdrawn
(WITHDRAWN) The method of claim 6, wherein the substrate is a graphitized catalyst metal. withdrawn
The method of claim 6, further comprising supplying a separate carbon source when growing the graphene. U.S. Application No. 13/437,140 Atty. Dkt. No. 2557S I -001731-US Page 4 of 9 withdrawn
A method of transferring a three-dimensional graphene structure, comprising: reducing a connection strength between the three-dimensional graphene structure manufactured according to the method of claim 6 and the substrate by injecting a gas therebetween; separating the three-dimensional graphene structure from the substrate by bonding the three-dimensional graphene structure to an adhesive support; combining the three-dimensional graphene structure with an insulating substrate; and removing the adhesive support. withdrawn
A three-dimensional graphene structure, comprising: a sheet of graphene having a first set of carbon atoms extending along a first plane a n d a second set of carbons extending along a second plane substantially parallel to the first plane, wherein the first set of carbon atoms are bonded to the second set of carbon atoms, the sheet of graphene has a protruding portion and a nonprotruding portion, and the protruding portion and the non-protruding portion are connected to form a periodically repeated three-dimensional shap e, and wherein a protruding end of the protruding portion is closed.
The three-dimensional graphene structure of claim 23, wherein, the first set of the carbon atoms collectively form the non-protruding portion, the second set of the carbon atoms collectively form the protruding portion, and the first. plane and the second plane are different.
Layer stacks claimed or described, ordered top of device to substrate.
three-dimensional graphene structure
electronic device with three-dimensional graphene structure
Materials described outside the worked examples.
graphene
SiC wafer
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is an SEM image of a SiC pattern wafer obtained from Example 1; [0038]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 50–1000 torr | — |
Pressure | 100–700 torr |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,921,824Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a substrate according to example embodiments; [0032]
FIGS. 2A and 2B respectively illustrate a substrate where a pattern is formed according to example embodiments and a cross section thereof; [0033]
FIGS. 3A and 3B respectively illustrate a substrate where a three-dimensional graphene structure is formed according to example embodiments and a cross section …
FIGS. 4A and 4B are a schematic diagram and a cross-sectional view illustrating a state in which a gas is injected between a graphene structure and a substrate …
FIGS. 5A and 5B respectively illustrate a substrate on which an adhesive tape is bonded to graphene according to example embodiments and a cross section …
FIGS. 6A and 6B respectively illustrate a three-dimensional graphene structure transferred to an insulating film according to example embodiments and a cross …
FIG. 7 is an SEM image of a SiC pattern wafer obtained from Example 1; [0038]
FIG. 8 is an SEM image of a three-dimensional graphene structure transferred to a silicon oxide film; [0039]
FIG. 9 is a magnified diagram of an area ' A' of
FIG. 10 is a magnified diagram of an area ' B' of
FIG. 11; [0043]FI G. 13 illustrates a certain area of a three-dimensional graphene structure obtained from Example 1; and [0044]
FIG. 12 is a magnified diagram of an area marked by a quadrangle of
FIG. 13.
FIG. 14 illustrates a Raman spectrum of areas ' a' to ' d' illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A three-dimensional graphene structure, comprising: at least one layer of graphene, wherein the at least one layer of graphene has a protruding portion and a non-protruding portion, and the protruding portion and the non-protruding portion are connected to form a periodically repeated three-dimensional shap e, and wherein a protruding end of the protruding portion is closed.
The three-dimensional graphene structure of claim 1, wherein, the three-dimencion-- c protrudin g portion includes at least one of selected from a convex part and a concave part, the convex part and the concave part are shaped in the form of one selected from a hemisphere, a cylinder, and a bowl, and an inner part of the protruding portion is hollow.
The three-dimensional graphene structure of claim 1, wherein, the three-dimensional shape has a size of about 0.1 p m to about 100 pm, and the three-dimensional shape has a pitch of about 0.1 p m to about 100 pm.
The three-dimensional graphene structure of claim 1, wherein the three-dimensional shape has a height or a depth of about 10 nm to about 10 pm.
The three-dimensional graphene structure of claim 1, further comprising a plurality of layers of the graphene.
(ORIGINAL) An electronic device, comprising: the three-dimensional graphene structure according to claim 1. U.S. Application No. 13/437,140 Atty. Dkt. No. 2557S I -001731-US Page of 9
(WITHDRAWN- CURRENTLY AMENDED) A method of manufacturing a three-dimensional graphene structure, comprising: SVG 13437140.06-09-2014.HWI₁₁₅₀₆PXXIFW4.CLM19795313.3.61.135.2184.193.svg 0.193 7.077 Graph Black and white SVG 13437140.06-09-2014.HWI₁₁₅₀₆PXXIFW4.CLM19795313.5.1401.202.2185.299.svg 0.323 2.613 Graph Black and white forming a pattern having a periodically repeated three-dimensional shape on at least one surface of a substrate; and forming the three-dimensional graphene structure having the periodically repeated three-dimensional shape of the pattern by growing graphene on the substrate on which the pattern is formed, wherein the periodically repeated three-dimensional shape has a protruding portion and a non-protruding portion, which are connected with each other, and a protruding end of the protruding portion is closed.
The method of claim 6, wherein the substrate is a SiC wafer. withdrawn
The method of claim 6, wherein the graphene is epitaxial graphene. withdrawn
(WITHDRAWN) The method of claim 6, wherein the pattern is obtained by photolithography. SVG 13437140.06-09-2014.HWI₁₁₅₀₆PXXIFW4.CLM19795313.22.429.1821.2253.1874.svg 0.177 6.08 Graph Black and white the pattern is a repetition of at least one of a convex part and a concave part shaped in the form of one selected from a hemisphere, a cylinder, and a bowl, and the pattern is hollow. withdrawn
(WITHDRAWN) The method of claim 6, wherein growing the graphene includes performing a heat treatment at a temperature of about 1,000 * C to about 2,000 * C in an inert atmosphere for about one minute to about one hour. withdrawn
The method of claim 6, wherein the pattern is formed on a graphitized catalyst metal on the substrate. withdrawn
(WITHDRAWN) The method of claim 6, wherein the substrate is a graphitized catalyst metal. withdrawn
The method of claim 6, further comprising supplying a separate carbon source when growing the graphene. U.S. Application No. 13/437,140 Atty. Dkt. No. 2557S I -001731-US Page 4 of 9 withdrawn
A method of transferring a three-dimensional graphene structure, comprising: reducing a connection strength between the three-dimensional graphene structure manufactured according to the method of claim 6 and the substrate by injecting a gas therebetween; separating the three-dimensional graphene structure from the substrate by bonding the three-dimensional graphene structure to an adhesive support; combining the three-dimensional graphene structure with an insulating substrate; and removing the adhesive support. withdrawn
A three-dimensional graphene structure, comprising: a sheet of graphene having a first set of carbon atoms extending along a first plane a n d a second set of carbons extending along a second plane substantially parallel to the first plane, wherein the first set of carbon atoms are bonded to the second set of carbon atoms, the sheet of graphene has a protruding portion and a nonprotruding portion, and the protruding portion and the non-protruding portion are connected to form a periodically repeated three-dimensional shap e, and wherein a protruding end of the protruding portion is closed.
The three-dimensional graphene structure of claim 23, wherein, the first set of the carbon atoms collectively form the non-protruding portion, the second set of the carbon atoms collectively form the protruding portion, and the first. plane and the second plane are different.
Layer stacks claimed or described, ordered top of device to substrate.
three-dimensional graphene structure
electronic device with three-dimensional graphene structure
Materials described outside the worked examples.
graphene
SiC wafer
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is an SEM image of a SiC pattern wafer obtained from Example 1; [0038]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 50–1000 torr | — |
Pressure | 100–700 torr |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,921,824Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a substrate according to example embodiments; [0032]
FIGS. 2A and 2B respectively illustrate a substrate where a pattern is formed according to example embodiments and a cross section thereof; [0033]
FIGS. 3A and 3B respectively illustrate a substrate where a three-dimensional graphene structure is formed according to example embodiments and a cross section …
FIGS. 4A and 4B are a schematic diagram and a cross-sectional view illustrating a state in which a gas is injected between a graphene structure and a substrate …
FIGS. 5A and 5B respectively illustrate a substrate on which an adhesive tape is bonded to graphene according to example embodiments and a cross section …
FIGS. 6A and 6B respectively illustrate a three-dimensional graphene structure transferred to an insulating film according to example embodiments and a cross …
FIG. 7 is an SEM image of a SiC pattern wafer obtained from Example 1; [0038]
FIG. 8 is an SEM image of a three-dimensional graphene structure transferred to a silicon oxide film; [0039]
FIG. 9 is a magnified diagram of an area ' A' of
FIG. 10 is a magnified diagram of an area ' B' of
FIG. 11; [0043]FI G. 13 illustrates a certain area of a three-dimensional graphene structure obtained from Example 1; and [0044]
FIG. 12 is a magnified diagram of an area marked by a quadrangle of
FIG. 13.
FIG. 14 illustrates a Raman spectrum of areas ' a' to ' d' illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A three-dimensional graphene structure, comprising: at least one layer of graphene, wherein the at least one layer of graphene has a protruding portion and a non-protruding portion, and the protruding portion and the non-protruding portion are connected to form a periodically repeated three-dimensional shap e, and wherein a protruding end of the protruding portion is closed.
The three-dimensional graphene structure of claim 1, wherein, the three-dimencion-- c protrudin g portion includes at least one of selected from a convex part and a concave part, the convex part and the concave part are shaped in the form of one selected from a hemisphere, a cylinder, and a bowl, and an inner part of the protruding portion is hollow.
The three-dimensional graphene structure of claim 1, wherein, the three-dimensional shape has a size of about 0.1 p m to about 100 pm, and the three-dimensional shape has a pitch of about 0.1 p m to about 100 pm.
The three-dimensional graphene structure of claim 1, wherein the three-dimensional shape has a height or a depth of about 10 nm to about 10 pm.
The three-dimensional graphene structure of claim 1, further comprising a plurality of layers of the graphene.
(ORIGINAL) An electronic device, comprising: the three-dimensional graphene structure according to claim 1. U.S. Application No. 13/437,140 Atty. Dkt. No. 2557S I -001731-US Page of 9
(WITHDRAWN- CURRENTLY AMENDED) A method of manufacturing a three-dimensional graphene structure, comprising: SVG 13437140.06-09-2014.HWI₁₁₅₀₆PXXIFW4.CLM19795313.3.61.135.2184.193.svg 0.193 7.077 Graph Black and white SVG 13437140.06-09-2014.HWI₁₁₅₀₆PXXIFW4.CLM19795313.5.1401.202.2185.299.svg 0.323 2.613 Graph Black and white forming a pattern having a periodically repeated three-dimensional shape on at least one surface of a substrate; and forming the three-dimensional graphene structure having the periodically repeated three-dimensional shape of the pattern by growing graphene on the substrate on which the pattern is formed, wherein the periodically repeated three-dimensional shape has a protruding portion and a non-protruding portion, which are connected with each other, and a protruding end of the protruding portion is closed.
The method of claim 6, wherein the substrate is a SiC wafer. withdrawn
The method of claim 6, wherein the graphene is epitaxial graphene. withdrawn
(WITHDRAWN) The method of claim 6, wherein the pattern is obtained by photolithography. SVG 13437140.06-09-2014.HWI₁₁₅₀₆PXXIFW4.CLM19795313.22.429.1821.2253.1874.svg 0.177 6.08 Graph Black and white the pattern is a repetition of at least one of a convex part and a concave part shaped in the form of one selected from a hemisphere, a cylinder, and a bowl, and the pattern is hollow. withdrawn
(WITHDRAWN) The method of claim 6, wherein growing the graphene includes performing a heat treatment at a temperature of about 1,000 * C to about 2,000 * C in an inert atmosphere for about one minute to about one hour. withdrawn
The method of claim 6, wherein the pattern is formed on a graphitized catalyst metal on the substrate. withdrawn
(WITHDRAWN) The method of claim 6, wherein the substrate is a graphitized catalyst metal. withdrawn
The method of claim 6, further comprising supplying a separate carbon source when growing the graphene. U.S. Application No. 13/437,140 Atty. Dkt. No. 2557S I -001731-US Page 4 of 9 withdrawn
A method of transferring a three-dimensional graphene structure, comprising: reducing a connection strength between the three-dimensional graphene structure manufactured according to the method of claim 6 and the substrate by injecting a gas therebetween; separating the three-dimensional graphene structure from the substrate by bonding the three-dimensional graphene structure to an adhesive support; combining the three-dimensional graphene structure with an insulating substrate; and removing the adhesive support. withdrawn
A three-dimensional graphene structure, comprising: a sheet of graphene having a first set of carbon atoms extending along a first plane a n d a second set of carbons extending along a second plane substantially parallel to the first plane, wherein the first set of carbon atoms are bonded to the second set of carbon atoms, the sheet of graphene has a protruding portion and a nonprotruding portion, and the protruding portion and the non-protruding portion are connected to form a periodically repeated three-dimensional shap e, and wherein a protruding end of the protruding portion is closed.
The three-dimensional graphene structure of claim 23, wherein, the first set of the carbon atoms collectively form the non-protruding portion, the second set of the carbon atoms collectively form the protruding portion, and the first. plane and the second plane are different.
Layer stacks claimed or described, ordered top of device to substrate.
three-dimensional graphene structure
electronic device with three-dimensional graphene structure
Materials described outside the worked examples.
graphene
SiC wafer
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is an SEM image of a SiC pattern wafer obtained from Example 1; [0038]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 50–1000 torr | — |
Pressure | 100–700 torr |
Related documents with shared materials, methods, properties, or citations.
epitaxial graphene
graphitized catalyst metal
silicon oxide film
SiO₂
FIG. 8 is an SEM image of a three-dimensional graphene structure transferred to a silicon oxide film; [0039]
FIG. 11; [0043]FI G. 13 illustrates a certain area of a three-dimensional graphene structure obtained from Example 1; and [0044]
FIG. 14 illustrates a Raman spectrum of areas ' a' to ' d' illustrated in
| — |
Thickness | 1–1000 nm | — |
Thickness | 10–100 nm | — |
Thickness | 0.01–5 mm | — |
Thickness | 0.1–1 mm | — |
Pressure | 300–1000 torr | — |
Pressure | 500–800 torr | — |
Thickness | ≤ 1 nm | — |
epitaxial graphene
graphitized catalyst metal
silicon oxide film
SiO₂
FIG. 8 is an SEM image of a three-dimensional graphene structure transferred to a silicon oxide film; [0039]
FIG. 11; [0043]FI G. 13 illustrates a certain area of a three-dimensional graphene structure obtained from Example 1; and [0044]
FIG. 14 illustrates a Raman spectrum of areas ' a' to ' d' illustrated in
| — |
Thickness | 1–1000 nm | — |
Thickness | 10–100 nm | — |
Thickness | 0.01–5 mm | — |
Thickness | 0.1–1 mm | — |
Pressure | 300–1000 torr | — |
Pressure | 500–800 torr | — |
Thickness | ≤ 1 nm | — |
epitaxial graphene
graphitized catalyst metal
silicon oxide film
SiO₂
FIG. 8 is an SEM image of a three-dimensional graphene structure transferred to a silicon oxide film; [0039]
FIG. 11; [0043]FI G. 13 illustrates a certain area of a three-dimensional graphene structure obtained from Example 1; and [0044]
FIG. 14 illustrates a Raman spectrum of areas ' a' to ' d' illustrated in
| — |
Thickness | 1–1000 nm | — |
Thickness | 10–100 nm | — |
Thickness | 0.01–5 mm | — |
Thickness | 0.1–1 mm | — |
Pressure | 300–1000 torr | — |
Pressure | 500–800 torr | — |
Thickness | ≤ 1 nm | — |
epitaxial graphene
graphitized catalyst metal
silicon oxide film
SiO₂
FIG. 8 is an SEM image of a three-dimensional graphene structure transferred to a silicon oxide film; [0039]
FIG. 11; [0043]FI G. 13 illustrates a certain area of a three-dimensional graphene structure obtained from Example 1; and [0044]
FIG. 14 illustrates a Raman spectrum of areas ' a' to ' d' illustrated in
| — |
Thickness | 1–1000 nm | — |
Thickness | 10–100 nm | — |
Thickness | 0.01–5 mm | — |
Thickness | 0.1–1 mm | — |
Pressure | 300–1000 torr | — |
Pressure | 500–800 torr | — |
Thickness | ≤ 1 nm | — |