Light Emitting Device Using GaN LED Chip

Takahide Joichi

Patent

Atlas literature

Patent

US 8,455,886

Light Emitting Device Using GaN LED Chip

Takahide Joichi

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 2

FIG. 3

FIG. 4

FIG. 5

FIG. 6

FIG. 7

FIG. 8

FIG. 9

FIG. 10

FIG. 11

FIG. 12

FIG. 13

FIG. 14

FIG. 15

FIG. 16

FIG. 17

FIG. 18

FIG. 19

FIG. 20

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

7 independent · 9 dependent

1
Independent
1-5. canceled
2
Independent
canceled
3
Independent
canceled
4
Independent
canceled
5
Independent
canceled
6
IndependentGaN-based semiconductoroxide semiconductor (light-transmissive electrode)light-transmissive substrate (electrically conductive)flip-chip GaN-based LED device
A light emitting device comprising: a GaN-based LED chip, said GaN-based LED chip being ﬂip-chip mounted, and comprising a light-transmissive substrate, a GaN-based semiconductor layer disposed on said light-transmissive substrate, and a negative electrode partially disposed on a backside of said light-transmissive substrate, said light-transmissive substrate having electrical conductivity, and said GaN-based semiconductor layer having a laminate structure comprising an n-type layer, a light emitting layer and a p-type layer in this order from a light-transmissive substrate side, wherein a positive electrode is f4wmed -disposed on the p-type layer, said electrode comprising a light-transmissive electrode including an oxide semiconductor, and a positive contact electrode electrically connected to said light-transmissive electrode, and wherein an area of said positive contact electrode is smaller than an area of 4he-said light- transmissive electrode.
1. 8
  Dependent← claim 6resin encapsulantflip-chip GaN-based LED device
  The light emitting device of claim 6 &Iairn-23, wherein said GaN-based LED chip is encapsulated with a resin.
2. 9
  Dependent← claim 6flip-chip GaN-based LED device
  The light emitting device of claim 6 el aim -23, wherein said light-transmissive electrode has a planarized surface, said planarized surface being planarized by polishing.
3. 10
  Dependent← claim 6n-type conductive semiconductor single crystal substrateflip-chip GaN-based LED device
  The light emitting device of claim 6 4 aim-23, wherein said light-transmissive substrate is an n-type conductive semiconductor single crystal substrate.
4. 12
  Dependent← claim 6AlAgRhPtflip-chip GaN-based LED device
  The light emitting device of claim 6 emai -23, wherein said positive contact electrode is a single layer ﬁlm or multi-layer ﬁlm having, at least on a side in contact with said light-transmissive electrode, a layer made of Al, Ag, Rh or Pt or an alloy made from at least one of Al, Ag, Rh and Pt.
5. 13
  Dependent← claim 6flip-chip GaN-based LED device
  The light emitting device of claim 6 e lai- 23, further comprising an insulating protective ﬁlm applied so as to coat a surface of said light-transmissive electrode, said ﬁlm having a surface with higher planarity than a planarity of said surface of said light-transmissive electrode.
6. 14
  Dependent← claim 6flip-chip GaN-based LED device
  14 The light emitting device of claim 6 elaii 23, wherein said positive contact electrode includes a part bonded to a base, and a current diﬀusion part extending from said part on said light-transmissive electrode.
7. 15
  Dependent← claim 6flip-chip GaN-based LED device
  The light emitting device of claim 6 0 aim 23, wherein the negative electrode includes a light-transmissive ohmic electrode, and a metallic contact electrode partially forred d is po s ed on a surface of said light- transmissive ohmic electrode.
8. 16
  Dependent← claim 6flip-chip GaN-based LED device
  The light emitting device of claim 6 e aim 23, wherein said negative electrode is a metal electrode, which acts as both an ohmic electrode and a contact electrode.
7
Independentflip-chip GaN-based LED device
The light emitting device of el aim -23claim 6, wherein the mbefe-ef-the said positive contact electrode is one of three positive contact electrodes is -thfee and th e-said three positive contact electrodes are positioned to form a triangle.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

flip-chip GaN-based LED device

oxide semiconductor (light-transmissive electrode)light-transmissive positive electrode (oxide semiconductor)

GaN-based semiconductorp-type GaN-based semiconductor layer

GaN-based semiconductorlight emitting layer (GaN-based)

GaN-based semiconductorn-type GaN-based semiconductor layer

light-transmissive substrate (electrically conductive)substrate (light-transmissive, electrically conductive)

Materials

Materials described outside the worked examples.

GaN-based semiconductor

LED Semiconductor Layer (N-Type, Light Emitting, P-Type Laminate)

oxide semiconductor (light-transmissive electrode)

Light-Transmissive Positive Electrode

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	≤ 20 nm	—
Thickness

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Light Emitting Device Using GaN LED Chip | Matter42 Literature