Patent
US 8,436,393LIGHT-EMITTING-DIODE CHIP COMPRISING A SEQUENCE OF GaN-BASED EPITAXIAL LAYERS WHICH EMIT RADIATION AND A METHOD FOR PRODUCING THE SAME
Berthold Hahn
US
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Patent
Atlas literature
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US 8,436,393Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
. A light-emitting diode chip comprising:-a GaN-based, radiation-emitting epitaxial layer sequence compris in g an active region, an n-doped layer and a p-doped layer; and-a reflective contact metallization assigned to said p-doped layer, said reflective contact metallization configured to reflect radiation emitted by the radiation-emitting layer sequence and comp rising:-a radiation permeable contact layer and a reflective layer, wherein said radiation permeable contact layer is arranged between said p-doped layer and said reflective layer and has a thickness of 10 nm or more, and said radiation permeable contact l ay er substantially co m prises at least one material from the gro up of materials including indium tin oxide (ITO) and ZnO; and wherein said reflective layer covers more than 50 % of said radiation permeable contact layer.
The light-emitting diode chip as recited in claim 1, wherein said reflective layer comprises Ag.
The light-emitting diode chip as recited in claim 1, wherein said active region comprises one or more undoped layer(s).
The light-emitting diode chip as recited in claim 1, wherein said reflective contact metallization further comprises:-a diffusion barrier layer on a side of the reflective layer facing away from the radiation permeable contact layer, and-an additional metal layer on a side of the diffusion ba rri er layer facing away from the reflective layer wherein the additional metal layer improves a bondability of the light-emitting diode chip.
2.
A light-emitting diode chip comprising:-a GaN-based, radiation-emitting epitaxial layer sequence compris in g an active region, an n-doped layer and a p-doped layer; and Applicant Berthold Hahn et al. Attorney's Docket No.: 12406-0045003/P2000,0100 Serial No.: 13/079,235 US N₂ Filed: Page: 4 of 10-a reflective contact metallization assigned to said p-doped layer, said reflective contact metallization configured to reflect radiation emitted by the radiation-emitting layer sequence and said reflective contact metallization f u rther comprises:-a reflective layer;-a radiation permeable contact layer on a side of said reflective layer facing said p-doped layer;-a diffusion ba rri er layer on a side of said reflective layer facing away from the radiation permeable contact layer; and-an additional metal layer on a side of the diff u sion barrier layer facing away from the reflective layer wherein the additional metal layer improves a bondability of the light- emitting diode chip, wherein said reflective layer covers more than 50 % of said radiation permeable contact layer[[.]], and wherein said radiation permeable contact l ay er substantially comprises at least one material from the gro up of materials including indium tin oxide (ITO) and ZnO.
The light-emitting diode chip as recited in claim 11, wherein the diffusion barrier layer comprises at least one of the following materials: Ti, Pt, W, TiWN.
The light-emitting diode chip as recited in claim 11, wherein the additional metal layer comprises or consists of Au or Al.
The light-emitting diode chip as recited in claim 11, wherein-the radiation permeable contact layer is in direct contact with the reflective layer,-the diffusion ba rri er layer is in direct contact with the reflective layer, and-the additional metal layer is in direct contact with the diffusion barrier layer.
The light-emitting diode chip as recited in claim 11, wherein said active region comprises one or more undoped layer(s).
The light-emitting diode chip as recited in claim 11, wherein said radiation permeable contact layer has a thickness of 10 nm or more.
18.
20.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED chip with reflective contact metallization (ITO/ZnO contact layer, claim 1)
GaN-based LED chip with full reflective contact metallization stack (claim 11)
Materials described outside the worked examples.
GaN-based epitaxial layer sequence
indium tin oxide (ITO)
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,436,393Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
. A light-emitting diode chip comprising:-a GaN-based, radiation-emitting epitaxial layer sequence compris in g an active region, an n-doped layer and a p-doped layer; and-a reflective contact metallization assigned to said p-doped layer, said reflective contact metallization configured to reflect radiation emitted by the radiation-emitting layer sequence and comp rising:-a radiation permeable contact layer and a reflective layer, wherein said radiation permeable contact layer is arranged between said p-doped layer and said reflective layer and has a thickness of 10 nm or more, and said radiation permeable contact l ay er substantially co m prises at least one material from the gro up of materials including indium tin oxide (ITO) and ZnO; and wherein said reflective layer covers more than 50 % of said radiation permeable contact layer.
The light-emitting diode chip as recited in claim 1, wherein said reflective layer comprises Ag.
The light-emitting diode chip as recited in claim 1, wherein said active region comprises one or more undoped layer(s).
The light-emitting diode chip as recited in claim 1, wherein said reflective contact metallization further comprises:-a diffusion barrier layer on a side of the reflective layer facing away from the radiation permeable contact layer, and-an additional metal layer on a side of the diffusion ba rri er layer facing away from the reflective layer wherein the additional metal layer improves a bondability of the light-emitting diode chip.
2.
A light-emitting diode chip comprising:-a GaN-based, radiation-emitting epitaxial layer sequence compris in g an active region, an n-doped layer and a p-doped layer; and Applicant Berthold Hahn et al. Attorney's Docket No.: 12406-0045003/P2000,0100 Serial No.: 13/079,235 US N₂ Filed: Page: 4 of 10-a reflective contact metallization assigned to said p-doped layer, said reflective contact metallization configured to reflect radiation emitted by the radiation-emitting layer sequence and said reflective contact metallization f u rther comprises:-a reflective layer;-a radiation permeable contact layer on a side of said reflective layer facing said p-doped layer;-a diffusion ba rri er layer on a side of said reflective layer facing away from the radiation permeable contact layer; and-an additional metal layer on a side of the diff u sion barrier layer facing away from the reflective layer wherein the additional metal layer improves a bondability of the light- emitting diode chip, wherein said reflective layer covers more than 50 % of said radiation permeable contact layer[[.]], and wherein said radiation permeable contact l ay er substantially comprises at least one material from the gro up of materials including indium tin oxide (ITO) and ZnO.
The light-emitting diode chip as recited in claim 11, wherein the diffusion barrier layer comprises at least one of the following materials: Ti, Pt, W, TiWN.
The light-emitting diode chip as recited in claim 11, wherein the additional metal layer comprises or consists of Au or Al.
The light-emitting diode chip as recited in claim 11, wherein-the radiation permeable contact layer is in direct contact with the reflective layer,-the diffusion ba rri er layer is in direct contact with the reflective layer, and-the additional metal layer is in direct contact with the diffusion barrier layer.
The light-emitting diode chip as recited in claim 11, wherein said active region comprises one or more undoped layer(s).
The light-emitting diode chip as recited in claim 11, wherein said radiation permeable contact layer has a thickness of 10 nm or more.
18.
20.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED chip with reflective contact metallization (ITO/ZnO contact layer, claim 1)
GaN-based LED chip with full reflective contact metallization stack (claim 11)
Materials described outside the worked examples.
GaN-based epitaxial layer sequence
indium tin oxide (ITO)
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,436,393Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
. A light-emitting diode chip comprising:-a GaN-based, radiation-emitting epitaxial layer sequence compris in g an active region, an n-doped layer and a p-doped layer; and-a reflective contact metallization assigned to said p-doped layer, said reflective contact metallization configured to reflect radiation emitted by the radiation-emitting layer sequence and comp rising:-a radiation permeable contact layer and a reflective layer, wherein said radiation permeable contact layer is arranged between said p-doped layer and said reflective layer and has a thickness of 10 nm or more, and said radiation permeable contact l ay er substantially co m prises at least one material from the gro up of materials including indium tin oxide (ITO) and ZnO; and wherein said reflective layer covers more than 50 % of said radiation permeable contact layer.
The light-emitting diode chip as recited in claim 1, wherein said reflective layer comprises Ag.
The light-emitting diode chip as recited in claim 1, wherein said active region comprises one or more undoped layer(s).
The light-emitting diode chip as recited in claim 1, wherein said reflective contact metallization further comprises:-a diffusion barrier layer on a side of the reflective layer facing away from the radiation permeable contact layer, and-an additional metal layer on a side of the diffusion ba rri er layer facing away from the reflective layer wherein the additional metal layer improves a bondability of the light-emitting diode chip.
2.
A light-emitting diode chip comprising:-a GaN-based, radiation-emitting epitaxial layer sequence compris in g an active region, an n-doped layer and a p-doped layer; and Applicant Berthold Hahn et al. Attorney's Docket No.: 12406-0045003/P2000,0100 Serial No.: 13/079,235 US N₂ Filed: Page: 4 of 10-a reflective contact metallization assigned to said p-doped layer, said reflective contact metallization configured to reflect radiation emitted by the radiation-emitting layer sequence and said reflective contact metallization f u rther comprises:-a reflective layer;-a radiation permeable contact layer on a side of said reflective layer facing said p-doped layer;-a diffusion ba rri er layer on a side of said reflective layer facing away from the radiation permeable contact layer; and-an additional metal layer on a side of the diff u sion barrier layer facing away from the reflective layer wherein the additional metal layer improves a bondability of the light- emitting diode chip, wherein said reflective layer covers more than 50 % of said radiation permeable contact layer[[.]], and wherein said radiation permeable contact l ay er substantially comprises at least one material from the gro up of materials including indium tin oxide (ITO) and ZnO.
The light-emitting diode chip as recited in claim 11, wherein the diffusion barrier layer comprises at least one of the following materials: Ti, Pt, W, TiWN.
The light-emitting diode chip as recited in claim 11, wherein the additional metal layer comprises or consists of Au or Al.
The light-emitting diode chip as recited in claim 11, wherein-the radiation permeable contact layer is in direct contact with the reflective layer,-the diffusion ba rri er layer is in direct contact with the reflective layer, and-the additional metal layer is in direct contact with the diffusion barrier layer.
The light-emitting diode chip as recited in claim 11, wherein said active region comprises one or more undoped layer(s).
The light-emitting diode chip as recited in claim 11, wherein said radiation permeable contact layer has a thickness of 10 nm or more.
18.
20.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED chip with reflective contact metallization (ITO/ZnO contact layer, claim 1)
GaN-based LED chip with full reflective contact metallization stack (claim 11)
Materials described outside the worked examples.
GaN-based epitaxial layer sequence
indium tin oxide (ITO)
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,436,393Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
. A light-emitting diode chip comprising:-a GaN-based, radiation-emitting epitaxial layer sequence compris in g an active region, an n-doped layer and a p-doped layer; and-a reflective contact metallization assigned to said p-doped layer, said reflective contact metallization configured to reflect radiation emitted by the radiation-emitting layer sequence and comp rising:-a radiation permeable contact layer and a reflective layer, wherein said radiation permeable contact layer is arranged between said p-doped layer and said reflective layer and has a thickness of 10 nm or more, and said radiation permeable contact l ay er substantially co m prises at least one material from the gro up of materials including indium tin oxide (ITO) and ZnO; and wherein said reflective layer covers more than 50 % of said radiation permeable contact layer.
The light-emitting diode chip as recited in claim 1, wherein said reflective layer comprises Ag.
The light-emitting diode chip as recited in claim 1, wherein said active region comprises one or more undoped layer(s).
The light-emitting diode chip as recited in claim 1, wherein said reflective contact metallization further comprises:-a diffusion barrier layer on a side of the reflective layer facing away from the radiation permeable contact layer, and-an additional metal layer on a side of the diffusion ba rri er layer facing away from the reflective layer wherein the additional metal layer improves a bondability of the light-emitting diode chip.
2.
A light-emitting diode chip comprising:-a GaN-based, radiation-emitting epitaxial layer sequence compris in g an active region, an n-doped layer and a p-doped layer; and Applicant Berthold Hahn et al. Attorney's Docket No.: 12406-0045003/P2000,0100 Serial No.: 13/079,235 US N₂ Filed: Page: 4 of 10-a reflective contact metallization assigned to said p-doped layer, said reflective contact metallization configured to reflect radiation emitted by the radiation-emitting layer sequence and said reflective contact metallization f u rther comprises:-a reflective layer;-a radiation permeable contact layer on a side of said reflective layer facing said p-doped layer;-a diffusion ba rri er layer on a side of said reflective layer facing away from the radiation permeable contact layer; and-an additional metal layer on a side of the diff u sion barrier layer facing away from the reflective layer wherein the additional metal layer improves a bondability of the light- emitting diode chip, wherein said reflective layer covers more than 50 % of said radiation permeable contact layer[[.]], and wherein said radiation permeable contact l ay er substantially comprises at least one material from the gro up of materials including indium tin oxide (ITO) and ZnO.
The light-emitting diode chip as recited in claim 11, wherein the diffusion barrier layer comprises at least one of the following materials: Ti, Pt, W, TiWN.
The light-emitting diode chip as recited in claim 11, wherein the additional metal layer comprises or consists of Au or Al.
The light-emitting diode chip as recited in claim 11, wherein-the radiation permeable contact layer is in direct contact with the reflective layer,-the diffusion ba rri er layer is in direct contact with the reflective layer, and-the additional metal layer is in direct contact with the diffusion barrier layer.
The light-emitting diode chip as recited in claim 11, wherein said active region comprises one or more undoped layer(s).
The light-emitting diode chip as recited in claim 11, wherein said radiation permeable contact layer has a thickness of 10 nm or more.
18.
20.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED chip with reflective contact metallization (ITO/ZnO contact layer, claim 1)
GaN-based LED chip with full reflective contact metallization stack (claim 11)
Materials described outside the worked examples.
GaN-based epitaxial layer sequence
indium tin oxide (ITO)
Related documents with shared materials, methods, properties, or citations.
GaN-based LED chip on SiC substrate (Fig. 1a embodiment)
ZnO
p-doped GaN-based layer
n-doped GaN-based layer
Ag
InGaN
InGaAlN
Ti
Pt
W
TiWN
Au
Al
SiC substrate
SiC
Ag-based contact metallization
PtAg alloy
PdAg alloy
Pt, Pd, Cr radioparent contact layer
Ti/Pt diffusion barrier
Ni/Au n-contact metallization
GaN-based LED chip on SiC substrate (Fig. 1a embodiment)
ZnO
p-doped GaN-based layer
n-doped GaN-based layer
Ag
InGaN
InGaAlN
Ti
Pt
W
TiWN
Au
Al
SiC substrate
SiC
Ag-based contact metallization
PtAg alloy
PdAg alloy
Pt, Pd, Cr radioparent contact layer
Ti/Pt diffusion barrier
Ni/Au n-contact metallization
GaN-based LED chip on SiC substrate (Fig. 1a embodiment)
ZnO
p-doped GaN-based layer
n-doped GaN-based layer
Ag
InGaN
InGaAlN
Ti
Pt
W
TiWN
Au
Al
SiC substrate
SiC
Ag-based contact metallization
PtAg alloy
PdAg alloy
Pt, Pd, Cr radioparent contact layer
Ti/Pt diffusion barrier
Ni/Au n-contact metallization
GaN-based LED chip on SiC substrate (Fig. 1a embodiment)
ZnO
p-doped GaN-based layer
n-doped GaN-based layer
Ag
InGaN
InGaAlN
Ti
Pt
W
TiWN
Au
Al
SiC substrate
SiC
Ag-based contact metallization
PtAg alloy
PdAg alloy
Pt, Pd, Cr radioparent contact layer
Ti/Pt diffusion barrier
Ni/Au n-contact metallization