Patent
US 8,716,045PULSED GROWTH OF CATALYST-FREE GROWTH OF GaN NANOWIRES AND APPLICATION IN GROUP III NITRIDE SEMICONDUCTOR BULK MATERIAL
Stephen D. Hersee, Xin Wang, Xinyu Sun
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 8,716,045Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-1 C depict cross-sectional views of an exemplary semiconductor nanowire device at various stages of fabrication in accordance with the present …
FIG. 2 depicts a second exemplary semiconductor nanowire device in accordance with the present teachings. [0015]
FIG. 3 depicts an exemplary process for forming a plurality of nanowires and/or nanowire arrays using a two-phase growth mode in accordance with the present …
FIGS. 4A-4C depict a third exemplary semiconductor nanowire device in accordance with the present teachings. [0017]
FIG. 5 depicts a forth exemplary semiconductor nanowire device in accordance with the present teachings. [0018]
FIGS. 6A-6D depict exemplary results for a plurality of ordered GaN nanowire arrays grown by the two-phase growth mode without use of a catalyst in accordance …
FIGS. 7A-7D depict four exemplary variants of semiconductor devices including GaN substrate structures formed from the plurality of nanowires and/or nanowire …
FIG. 8 depicts an exemplary core-shell nanowire/M Q W (multiple quantum well) active structure device in accordance with the present teachings. [0021]
FIG. 9 depicts another exemplary core-shell nanowire/M Q W active structure device in accordance with the present teachings. [0022]
FIG. 10 A, the device 1000 can include a conductive structure 1040 formed on the surface of the device 900, i.e., on each surface of the dielectric material …
FIG. 11 depicts an exemplary nanowire laser device using the core-shell nanowire/M Q W active structure described in
FIG. 12 depicts another exemplary nanowire laser device using the core- shell nanowire/M Q W active structure described in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Origi nal) A method of making nanowires comprising: providing a s ub strat e comprising a selective growth mask disposed on a top surface of th e s ub strate, whe rei n the selective growth mask comprise s a pluralit y o f p att erned aperture s t h at expo se a pluralhty of portions of the s ub strat e; applyin g a s elective non-pulse d gr owth mode to gr ow a s emiconduc tor material on ea ch o f t he plu ral i ty of portions of the sub strat e exposed in each of the patter ned apertures; applying a growth-mod e transiti on fr om the non-pulsed growth mod e t o a pulse d g rowth mod e, wherein a pl u ral i ty of semiconductor nanowi res are grown by continuing the pulsed grow th mode of the semiconductor material.
The method of claim 1, wherein the su bstrate compri ses a buff er lay er over a supportin g s ub strat e surfac e, a n d t he semiconductor materi al is sele c tiv e ly gr ow n thr ough the plurality of p att erne d a pertures on the buffe r lay er.
Th e method of claim 1, wherein the substrate comp rises material s sel e cte d from th e gr oup consisting of Si, SiC, sa pphire, GaN, GaA s, a nd combinations thereof, -2 REPLY TO Gmca AcnoN ATrO RNEY D ocKET No.: 0023, 0045-04 APPLcATION No.: 13/783,219
(O rigi nal) The method of claim 1, wherein th e p luralit y of patterned apertures forms a hexagonal array having a diameter of about 10 nm to about 1000 nm and a pitch of about 50 nm to a bout 10 km.
The method of claim 1, wherein a c ross-s ec tio nal feature of each of the plurality of se miconductor nanow ires and each of the plurali ty of p atter n ed a pert ures is substan tial l y si milar.
(O rigina l) The meth od of claim 1, wh ere in the se m icond u ctor m ater i al for the plu rality of se micon duc t or nanowire s co mpri ses m ater ial s selected from th e group consist in g o f GaN, AIN, InN, InGaN, AlInGaN, A IGaN, and c ombination s t h ereo f, ~3- SVG 13783219.10-22-2013.HN₃HEZUBPXXIFW3.CLM10783456.2.1642.222.2240.306.svg 0.28 1.993 Graph Black and white REPLY TO O FFC E A CrioN
(Orginal) The method of claim 1, wherein the se lective growth comprises Group fil aid Group V precursor ga se s ha ving a V/ll ratio rangin g fr om about 100 to about $00.
The method of claim 1, wherein the pulsed growth compri ses al ter nately intro ducin g Group Ill and Group V p recursor gases of th e se miconductor materi al i n a gr owth reactor with one or more sequence loop s, wherein th e p recursor gas es comp ris e a time averaged V/l Ul ratio ranging from about 60 to about 300.
The method of claim 1, wherein the pulsed growth comprises a vertical growth ra te o f a bout 2 mm/hr or higher.
The method of claim 1, wherein each of the plurality of nanowires has a length of about 10 nm to about 100 pm.
The method of claim 1, wherein: tra n sit ionring fror the non-puls ed g rowth mode to the pulsed growth mode occurs after growth of th e s emiconductor materia l pr otrud es over a top of the se lective growth mask to form a plurality of truncated pyramid-shaped nanostructures partially disposed on a surface of the selective growth mask; a nd -4. SVG 13783219.10-22-2013.HN₃HEZUBPXXIFW3.CLM10783457.2.1641.225.2241.308.svg 0.277 2 Chemistry Black and white REPLY TO OF3iCE Ac-ToN forming the plurali ty o f nanowi res c ompri ses for ming a sem iconductor nanowi re on each o f the plurali ty of tr un cated p yramid-shaped nano str uctures by continuing the pulsed grow th of the se micondu ctor material such that a cross-sect ion al f eat u re of the se micondu ctor nanowi re a n d a to p facet of eac h o f the plu rality of p yra mid- sha p ed nano str uctu res is su bstant i ally s imil ar.
1 6. (Orginal) A group il -N nanowi re array form ed by the m eth o d o f claim 1, c omprising: a s upp ort co mprisin g a plu ral i ty o f selected s urf ace re gion s; a nd a group:Il-N nanowi re connected to and exte nding from each o f the pl u rality of selected s urf ace re gio ns of the support, wherein the group 1-N nanowi re is oriented along a s ingl e d i rectio n and ma in tai n s a cr o ss-secti onal f eat u re of o ne o f the plu ral i ty o f selected s urfac e re g ions.
(Originas) Th e met hod of cla im 6, wh ere in a growth-mod e tra nsi tio n from the nonpulsed gro wth mode to the pulsed gr owth mod e occurs be fo re gro wth of t h e se micond uct or material protru des o ver a top of the selective gr owth mask.
T he meth o d of c laim 1 4, where in the se micondu ctor nanowi re c ompri ses a cross-sect ion al d im ensi on small er t han that o f each of the plurali ty of p atter n ed a p ert u res.
The nanowi re array o f cla im 21, wherein the support further comprises a p yra rmd-shaped group Il-IN nanostructure formed from the group IIl-N nanowire nucleus and par tially dispo sed on th e s elective growth mask, wherein a top facet of the pyramid-shaped -6- RmPYTo OFFICE ACi iON ATTORNEY DOCKET No,: 0023.0045-04 APPLICATION Nod 13/783,219 group ti l-N nanostructure comprises one of the plurality of selected surface regions of the support.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor nanowire array on masked substrate
nanowire on truncated pyramid-shaped nanostructure
Materials described outside the worked examples.
semiconductor material (generic)
selective growth mask
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Defect Density | — | GaN |
Thickness | 10–1000000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,716,045Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-1 C depict cross-sectional views of an exemplary semiconductor nanowire device at various stages of fabrication in accordance with the present …
FIG. 2 depicts a second exemplary semiconductor nanowire device in accordance with the present teachings. [0015]
FIG. 3 depicts an exemplary process for forming a plurality of nanowires and/or nanowire arrays using a two-phase growth mode in accordance with the present …
FIGS. 4A-4C depict a third exemplary semiconductor nanowire device in accordance with the present teachings. [0017]
FIG. 5 depicts a forth exemplary semiconductor nanowire device in accordance with the present teachings. [0018]
FIGS. 6A-6D depict exemplary results for a plurality of ordered GaN nanowire arrays grown by the two-phase growth mode without use of a catalyst in accordance …
FIGS. 7A-7D depict four exemplary variants of semiconductor devices including GaN substrate structures formed from the plurality of nanowires and/or nanowire …
FIG. 8 depicts an exemplary core-shell nanowire/M Q W (multiple quantum well) active structure device in accordance with the present teachings. [0021]
FIG. 9 depicts another exemplary core-shell nanowire/M Q W active structure device in accordance with the present teachings. [0022]
FIG. 10 A, the device 1000 can include a conductive structure 1040 formed on the surface of the device 900, i.e., on each surface of the dielectric material …
FIG. 11 depicts an exemplary nanowire laser device using the core-shell nanowire/M Q W active structure described in
FIG. 12 depicts another exemplary nanowire laser device using the core- shell nanowire/M Q W active structure described in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Origi nal) A method of making nanowires comprising: providing a s ub strat e comprising a selective growth mask disposed on a top surface of th e s ub strate, whe rei n the selective growth mask comprise s a pluralit y o f p att erned aperture s t h at expo se a pluralhty of portions of the s ub strat e; applyin g a s elective non-pulse d gr owth mode to gr ow a s emiconduc tor material on ea ch o f t he plu ral i ty of portions of the sub strat e exposed in each of the patter ned apertures; applying a growth-mod e transiti on fr om the non-pulsed growth mod e t o a pulse d g rowth mod e, wherein a pl u ral i ty of semiconductor nanowi res are grown by continuing the pulsed grow th mode of the semiconductor material.
The method of claim 1, wherein the su bstrate compri ses a buff er lay er over a supportin g s ub strat e surfac e, a n d t he semiconductor materi al is sele c tiv e ly gr ow n thr ough the plurality of p att erne d a pertures on the buffe r lay er.
Th e method of claim 1, wherein the substrate comp rises material s sel e cte d from th e gr oup consisting of Si, SiC, sa pphire, GaN, GaA s, a nd combinations thereof, -2 REPLY TO Gmca AcnoN ATrO RNEY D ocKET No.: 0023, 0045-04 APPLcATION No.: 13/783,219
(O rigi nal) The method of claim 1, wherein th e p luralit y of patterned apertures forms a hexagonal array having a diameter of about 10 nm to about 1000 nm and a pitch of about 50 nm to a bout 10 km.
The method of claim 1, wherein a c ross-s ec tio nal feature of each of the plurality of se miconductor nanow ires and each of the plurali ty of p atter n ed a pert ures is substan tial l y si milar.
(O rigina l) The meth od of claim 1, wh ere in the se m icond u ctor m ater i al for the plu rality of se micon duc t or nanowire s co mpri ses m ater ial s selected from th e group consist in g o f GaN, AIN, InN, InGaN, AlInGaN, A IGaN, and c ombination s t h ereo f, ~3- SVG 13783219.10-22-2013.HN₃HEZUBPXXIFW3.CLM10783456.2.1642.222.2240.306.svg 0.28 1.993 Graph Black and white REPLY TO O FFC E A CrioN
(Orginal) The method of claim 1, wherein the se lective growth comprises Group fil aid Group V precursor ga se s ha ving a V/ll ratio rangin g fr om about 100 to about $00.
The method of claim 1, wherein the pulsed growth compri ses al ter nately intro ducin g Group Ill and Group V p recursor gases of th e se miconductor materi al i n a gr owth reactor with one or more sequence loop s, wherein th e p recursor gas es comp ris e a time averaged V/l Ul ratio ranging from about 60 to about 300.
The method of claim 1, wherein the pulsed growth comprises a vertical growth ra te o f a bout 2 mm/hr or higher.
The method of claim 1, wherein each of the plurality of nanowires has a length of about 10 nm to about 100 pm.
The method of claim 1, wherein: tra n sit ionring fror the non-puls ed g rowth mode to the pulsed growth mode occurs after growth of th e s emiconductor materia l pr otrud es over a top of the se lective growth mask to form a plurality of truncated pyramid-shaped nanostructures partially disposed on a surface of the selective growth mask; a nd -4. SVG 13783219.10-22-2013.HN₃HEZUBPXXIFW3.CLM10783457.2.1641.225.2241.308.svg 0.277 2 Chemistry Black and white REPLY TO OF3iCE Ac-ToN forming the plurali ty o f nanowi res c ompri ses for ming a sem iconductor nanowi re on each o f the plurali ty of tr un cated p yramid-shaped nano str uctures by continuing the pulsed grow th of the se micondu ctor material such that a cross-sect ion al f eat u re of the se micondu ctor nanowi re a n d a to p facet of eac h o f the plu rality of p yra mid- sha p ed nano str uctu res is su bstant i ally s imil ar.
1 6. (Orginal) A group il -N nanowi re array form ed by the m eth o d o f claim 1, c omprising: a s upp ort co mprisin g a plu ral i ty o f selected s urf ace re gion s; a nd a group:Il-N nanowi re connected to and exte nding from each o f the pl u rality of selected s urf ace re gio ns of the support, wherein the group 1-N nanowi re is oriented along a s ingl e d i rectio n and ma in tai n s a cr o ss-secti onal f eat u re of o ne o f the plu ral i ty o f selected s urfac e re g ions.
(Originas) Th e met hod of cla im 6, wh ere in a growth-mod e tra nsi tio n from the nonpulsed gro wth mode to the pulsed gr owth mod e occurs be fo re gro wth of t h e se micond uct or material protru des o ver a top of the selective gr owth mask.
T he meth o d of c laim 1 4, where in the se micondu ctor nanowi re c ompri ses a cross-sect ion al d im ensi on small er t han that o f each of the plurali ty of p atter n ed a p ert u res.
The nanowi re array o f cla im 21, wherein the support further comprises a p yra rmd-shaped group Il-IN nanostructure formed from the group IIl-N nanowire nucleus and par tially dispo sed on th e s elective growth mask, wherein a top facet of the pyramid-shaped -6- RmPYTo OFFICE ACi iON ATTORNEY DOCKET No,: 0023.0045-04 APPLICATION Nod 13/783,219 group ti l-N nanostructure comprises one of the plurality of selected surface regions of the support.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor nanowire array on masked substrate
nanowire on truncated pyramid-shaped nanostructure
Materials described outside the worked examples.
semiconductor material (generic)
selective growth mask
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Defect Density | — | GaN |
Thickness | 10–1000000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,716,045Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-1 C depict cross-sectional views of an exemplary semiconductor nanowire device at various stages of fabrication in accordance with the present …
FIG. 2 depicts a second exemplary semiconductor nanowire device in accordance with the present teachings. [0015]
FIG. 3 depicts an exemplary process for forming a plurality of nanowires and/or nanowire arrays using a two-phase growth mode in accordance with the present …
FIGS. 4A-4C depict a third exemplary semiconductor nanowire device in accordance with the present teachings. [0017]
FIG. 5 depicts a forth exemplary semiconductor nanowire device in accordance with the present teachings. [0018]
FIGS. 6A-6D depict exemplary results for a plurality of ordered GaN nanowire arrays grown by the two-phase growth mode without use of a catalyst in accordance …
FIGS. 7A-7D depict four exemplary variants of semiconductor devices including GaN substrate structures formed from the plurality of nanowires and/or nanowire …
FIG. 8 depicts an exemplary core-shell nanowire/M Q W (multiple quantum well) active structure device in accordance with the present teachings. [0021]
FIG. 9 depicts another exemplary core-shell nanowire/M Q W active structure device in accordance with the present teachings. [0022]
FIG. 10 A, the device 1000 can include a conductive structure 1040 formed on the surface of the device 900, i.e., on each surface of the dielectric material …
FIG. 11 depicts an exemplary nanowire laser device using the core-shell nanowire/M Q W active structure described in
FIG. 12 depicts another exemplary nanowire laser device using the core- shell nanowire/M Q W active structure described in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Origi nal) A method of making nanowires comprising: providing a s ub strat e comprising a selective growth mask disposed on a top surface of th e s ub strate, whe rei n the selective growth mask comprise s a pluralit y o f p att erned aperture s t h at expo se a pluralhty of portions of the s ub strat e; applyin g a s elective non-pulse d gr owth mode to gr ow a s emiconduc tor material on ea ch o f t he plu ral i ty of portions of the sub strat e exposed in each of the patter ned apertures; applying a growth-mod e transiti on fr om the non-pulsed growth mod e t o a pulse d g rowth mod e, wherein a pl u ral i ty of semiconductor nanowi res are grown by continuing the pulsed grow th mode of the semiconductor material.
The method of claim 1, wherein the su bstrate compri ses a buff er lay er over a supportin g s ub strat e surfac e, a n d t he semiconductor materi al is sele c tiv e ly gr ow n thr ough the plurality of p att erne d a pertures on the buffe r lay er.
Th e method of claim 1, wherein the substrate comp rises material s sel e cte d from th e gr oup consisting of Si, SiC, sa pphire, GaN, GaA s, a nd combinations thereof, -2 REPLY TO Gmca AcnoN ATrO RNEY D ocKET No.: 0023, 0045-04 APPLcATION No.: 13/783,219
(O rigi nal) The method of claim 1, wherein th e p luralit y of patterned apertures forms a hexagonal array having a diameter of about 10 nm to about 1000 nm and a pitch of about 50 nm to a bout 10 km.
The method of claim 1, wherein a c ross-s ec tio nal feature of each of the plurality of se miconductor nanow ires and each of the plurali ty of p atter n ed a pert ures is substan tial l y si milar.
(O rigina l) The meth od of claim 1, wh ere in the se m icond u ctor m ater i al for the plu rality of se micon duc t or nanowire s co mpri ses m ater ial s selected from th e group consist in g o f GaN, AIN, InN, InGaN, AlInGaN, A IGaN, and c ombination s t h ereo f, ~3- SVG 13783219.10-22-2013.HN₃HEZUBPXXIFW3.CLM10783456.2.1642.222.2240.306.svg 0.28 1.993 Graph Black and white REPLY TO O FFC E A CrioN
(Orginal) The method of claim 1, wherein the se lective growth comprises Group fil aid Group V precursor ga se s ha ving a V/ll ratio rangin g fr om about 100 to about $00.
The method of claim 1, wherein the pulsed growth compri ses al ter nately intro ducin g Group Ill and Group V p recursor gases of th e se miconductor materi al i n a gr owth reactor with one or more sequence loop s, wherein th e p recursor gas es comp ris e a time averaged V/l Ul ratio ranging from about 60 to about 300.
The method of claim 1, wherein the pulsed growth comprises a vertical growth ra te o f a bout 2 mm/hr or higher.
The method of claim 1, wherein each of the plurality of nanowires has a length of about 10 nm to about 100 pm.
The method of claim 1, wherein: tra n sit ionring fror the non-puls ed g rowth mode to the pulsed growth mode occurs after growth of th e s emiconductor materia l pr otrud es over a top of the se lective growth mask to form a plurality of truncated pyramid-shaped nanostructures partially disposed on a surface of the selective growth mask; a nd -4. SVG 13783219.10-22-2013.HN₃HEZUBPXXIFW3.CLM10783457.2.1641.225.2241.308.svg 0.277 2 Chemistry Black and white REPLY TO OF3iCE Ac-ToN forming the plurali ty o f nanowi res c ompri ses for ming a sem iconductor nanowi re on each o f the plurali ty of tr un cated p yramid-shaped nano str uctures by continuing the pulsed grow th of the se micondu ctor material such that a cross-sect ion al f eat u re of the se micondu ctor nanowi re a n d a to p facet of eac h o f the plu rality of p yra mid- sha p ed nano str uctu res is su bstant i ally s imil ar.
1 6. (Orginal) A group il -N nanowi re array form ed by the m eth o d o f claim 1, c omprising: a s upp ort co mprisin g a plu ral i ty o f selected s urf ace re gion s; a nd a group:Il-N nanowi re connected to and exte nding from each o f the pl u rality of selected s urf ace re gio ns of the support, wherein the group 1-N nanowi re is oriented along a s ingl e d i rectio n and ma in tai n s a cr o ss-secti onal f eat u re of o ne o f the plu ral i ty o f selected s urfac e re g ions.
(Originas) Th e met hod of cla im 6, wh ere in a growth-mod e tra nsi tio n from the nonpulsed gro wth mode to the pulsed gr owth mod e occurs be fo re gro wth of t h e se micond uct or material protru des o ver a top of the selective gr owth mask.
T he meth o d of c laim 1 4, where in the se micondu ctor nanowi re c ompri ses a cross-sect ion al d im ensi on small er t han that o f each of the plurali ty of p atter n ed a p ert u res.
The nanowi re array o f cla im 21, wherein the support further comprises a p yra rmd-shaped group Il-IN nanostructure formed from the group IIl-N nanowire nucleus and par tially dispo sed on th e s elective growth mask, wherein a top facet of the pyramid-shaped -6- RmPYTo OFFICE ACi iON ATTORNEY DOCKET No,: 0023.0045-04 APPLICATION Nod 13/783,219 group ti l-N nanostructure comprises one of the plurality of selected surface regions of the support.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor nanowire array on masked substrate
nanowire on truncated pyramid-shaped nanostructure
Materials described outside the worked examples.
semiconductor material (generic)
selective growth mask
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Defect Density | — | GaN |
Thickness | 10–1000000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,716,045Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-1 C depict cross-sectional views of an exemplary semiconductor nanowire device at various stages of fabrication in accordance with the present …
FIG. 2 depicts a second exemplary semiconductor nanowire device in accordance with the present teachings. [0015]
FIG. 3 depicts an exemplary process for forming a plurality of nanowires and/or nanowire arrays using a two-phase growth mode in accordance with the present …
FIGS. 4A-4C depict a third exemplary semiconductor nanowire device in accordance with the present teachings. [0017]
FIG. 5 depicts a forth exemplary semiconductor nanowire device in accordance with the present teachings. [0018]
FIGS. 6A-6D depict exemplary results for a plurality of ordered GaN nanowire arrays grown by the two-phase growth mode without use of a catalyst in accordance …
FIGS. 7A-7D depict four exemplary variants of semiconductor devices including GaN substrate structures formed from the plurality of nanowires and/or nanowire …
FIG. 8 depicts an exemplary core-shell nanowire/M Q W (multiple quantum well) active structure device in accordance with the present teachings. [0021]
FIG. 9 depicts another exemplary core-shell nanowire/M Q W active structure device in accordance with the present teachings. [0022]
FIG. 10 A, the device 1000 can include a conductive structure 1040 formed on the surface of the device 900, i.e., on each surface of the dielectric material …
FIG. 11 depicts an exemplary nanowire laser device using the core-shell nanowire/M Q W active structure described in
FIG. 12 depicts another exemplary nanowire laser device using the core- shell nanowire/M Q W active structure described in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Origi nal) A method of making nanowires comprising: providing a s ub strat e comprising a selective growth mask disposed on a top surface of th e s ub strate, whe rei n the selective growth mask comprise s a pluralit y o f p att erned aperture s t h at expo se a pluralhty of portions of the s ub strat e; applyin g a s elective non-pulse d gr owth mode to gr ow a s emiconduc tor material on ea ch o f t he plu ral i ty of portions of the sub strat e exposed in each of the patter ned apertures; applying a growth-mod e transiti on fr om the non-pulsed growth mod e t o a pulse d g rowth mod e, wherein a pl u ral i ty of semiconductor nanowi res are grown by continuing the pulsed grow th mode of the semiconductor material.
The method of claim 1, wherein the su bstrate compri ses a buff er lay er over a supportin g s ub strat e surfac e, a n d t he semiconductor materi al is sele c tiv e ly gr ow n thr ough the plurality of p att erne d a pertures on the buffe r lay er.
Th e method of claim 1, wherein the substrate comp rises material s sel e cte d from th e gr oup consisting of Si, SiC, sa pphire, GaN, GaA s, a nd combinations thereof, -2 REPLY TO Gmca AcnoN ATrO RNEY D ocKET No.: 0023, 0045-04 APPLcATION No.: 13/783,219
(O rigi nal) The method of claim 1, wherein th e p luralit y of patterned apertures forms a hexagonal array having a diameter of about 10 nm to about 1000 nm and a pitch of about 50 nm to a bout 10 km.
The method of claim 1, wherein a c ross-s ec tio nal feature of each of the plurality of se miconductor nanow ires and each of the plurali ty of p atter n ed a pert ures is substan tial l y si milar.
(O rigina l) The meth od of claim 1, wh ere in the se m icond u ctor m ater i al for the plu rality of se micon duc t or nanowire s co mpri ses m ater ial s selected from th e group consist in g o f GaN, AIN, InN, InGaN, AlInGaN, A IGaN, and c ombination s t h ereo f, ~3- SVG 13783219.10-22-2013.HN₃HEZUBPXXIFW3.CLM10783456.2.1642.222.2240.306.svg 0.28 1.993 Graph Black and white REPLY TO O FFC E A CrioN
(Orginal) The method of claim 1, wherein the se lective growth comprises Group fil aid Group V precursor ga se s ha ving a V/ll ratio rangin g fr om about 100 to about $00.
The method of claim 1, wherein the pulsed growth compri ses al ter nately intro ducin g Group Ill and Group V p recursor gases of th e se miconductor materi al i n a gr owth reactor with one or more sequence loop s, wherein th e p recursor gas es comp ris e a time averaged V/l Ul ratio ranging from about 60 to about 300.
The method of claim 1, wherein the pulsed growth comprises a vertical growth ra te o f a bout 2 mm/hr or higher.
The method of claim 1, wherein each of the plurality of nanowires has a length of about 10 nm to about 100 pm.
The method of claim 1, wherein: tra n sit ionring fror the non-puls ed g rowth mode to the pulsed growth mode occurs after growth of th e s emiconductor materia l pr otrud es over a top of the se lective growth mask to form a plurality of truncated pyramid-shaped nanostructures partially disposed on a surface of the selective growth mask; a nd -4. SVG 13783219.10-22-2013.HN₃HEZUBPXXIFW3.CLM10783457.2.1641.225.2241.308.svg 0.277 2 Chemistry Black and white REPLY TO OF3iCE Ac-ToN forming the plurali ty o f nanowi res c ompri ses for ming a sem iconductor nanowi re on each o f the plurali ty of tr un cated p yramid-shaped nano str uctures by continuing the pulsed grow th of the se micondu ctor material such that a cross-sect ion al f eat u re of the se micondu ctor nanowi re a n d a to p facet of eac h o f the plu rality of p yra mid- sha p ed nano str uctu res is su bstant i ally s imil ar.
1 6. (Orginal) A group il -N nanowi re array form ed by the m eth o d o f claim 1, c omprising: a s upp ort co mprisin g a plu ral i ty o f selected s urf ace re gion s; a nd a group:Il-N nanowi re connected to and exte nding from each o f the pl u rality of selected s urf ace re gio ns of the support, wherein the group 1-N nanowi re is oriented along a s ingl e d i rectio n and ma in tai n s a cr o ss-secti onal f eat u re of o ne o f the plu ral i ty o f selected s urfac e re g ions.
(Originas) Th e met hod of cla im 6, wh ere in a growth-mod e tra nsi tio n from the nonpulsed gro wth mode to the pulsed gr owth mod e occurs be fo re gro wth of t h e se micond uct or material protru des o ver a top of the selective gr owth mask.
T he meth o d of c laim 1 4, where in the se micondu ctor nanowi re c ompri ses a cross-sect ion al d im ensi on small er t han that o f each of the plurali ty of p atter n ed a p ert u res.
The nanowi re array o f cla im 21, wherein the support further comprises a p yra rmd-shaped group Il-IN nanostructure formed from the group IIl-N nanowire nucleus and par tially dispo sed on th e s elective growth mask, wherein a top facet of the pyramid-shaped -6- RmPYTo OFFICE ACi iON ATTORNEY DOCKET No,: 0023.0045-04 APPLICATION Nod 13/783,219 group ti l-N nanostructure comprises one of the plurality of selected surface regions of the support.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor nanowire array on masked substrate
nanowire on truncated pyramid-shaped nanostructure
Materials described outside the worked examples.
semiconductor material (generic)
selective growth mask
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Defect Density | — | GaN |
Thickness | 10–1000000 nm |
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