Patent
US 8,487,317GaN Semiconductor Device
Yi-Chieh Lin
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,487,317Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a schematic diagram of a conventional semiconductor device structure.
FIG. 2 shows a schematic diagram of another type of conventional semiconductor device structure.
FIG. 3B. During the aforementioned epitaxial process, there are several epitaxial defects formed. The epitaxial defects are formed from the substrate surface …
FIGS. 4A-4C show a schematic diagram of a manufacturing process of a GaN semiconductor device in accordance of one embodiment of present invention.
FIG. 5A shows the 500-time optical microscope photo of the surface of the conventional semiconductor device with SiN buffer body. FIG 5 B shows the 500-time …
FIG. 6B shows a sectional diagram of a GaN semiconductor device in accordance with further another embodiment. Detailed Description of a Preferred Embodiments …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN semiconductor device, at least comprising: a substrate having an upper surface; an amorphous and single layer of metal-rich nitride thin film located on the substrate and having a top surface and a side surface; a first buffer layer bein g a semiconductor directly contactin g the top surface and the side surface of le -ated- on the metal-rich nitride thin film; and a semiconductor stack layer located on the first buffer layer, wherein the metal-rich nitride thin film partially covers the upper surface of the substrate.
The GaN semiconductor device according to claim 1, the semiconductor stack layer further comprises: a first conductive type semiconductor layer, located on the first buffer layer; an active layer, located on the first conductive type semiconductor layer; and a second conductive type semiconductor layer, located on the active layer.
The GaN semiconductor device according to claim 1, the material of the metal-rich nitride thin film comprises MgSiN, ZnSiN, MgGeN, or ZnGeN.
The GaN semiconductor device according to claim 1, the meta l element in the metal-rich nitride thin film is more than twice as much as the non-metal element in the metal-rich nitride thin film.
5, The GaN semiconductor device according to claim 1, the metal-rich -2- App l e. No. 12/382,955 Amendment dated: Reply to OA of: nitride thin film is a discontinuous thin film structure.
The G aN semiconductor device according to claim 1, the material of the first buffer layer comprises G aN or A IN.
The G aN semiconductor device according to claim 1, the GaN semiconductor device further comprises a second buffer layer located between the metal-rich nitride thin film and the substrate.
The G aN semiconductor device according to claim 1, the GaN semiconductor device further comprises at least one electrode on the semiconductor stack layer.
A light-emitting device, comprising: a substrate, having an upper surface; an amorphous and sing l e layer of metal-rich nitride thin film, located on the substrate and havin g a top surface and a side surface; a first buffer layer l oc ated-on bein g a semiconductor and directly contactin g the top surface and the side surface of the metal-rich thin film; a light-emitting stack l ayer, located on the first buffer layer; and at least one electrode, located on the light-emitting stack layer, wherein the -3- App l e. No. 1 2/382,955 Amendment dated: Reply to O A of: metal-rich nitride thin film partially covers the upper surface of the substrate.
The light-emitting device according to claim 11, the light-emitting stack layer further comprises: a first conductive type semiconductor layer, located on the substrate; a light-emitting layer, located on the first conductive type semiconductor layer; and a second conductive type semiconductor layer, located on the light-emitting layer.
The light-emitting device according claim 11, the metal element in the metal-rich nitride thin film is more than twice as much as the non-metal element in the metal-rich nitride thin film.
(Previously Amended) The light-emitting device according claim 11, the material of the metal-rich nitride thin film is MgSiN, ZnSiN, MgGeN, or ZnGeNs.
The light-emitting device according claim 11, the metal-rich nitride thin film is a discontinuous thin film structure.
The l ight-emitting device according claim 11, GaN series.
The light-emitting device according claim 11, AIN.
The light-emitting device according claim 11, second buffer layer, located between the substrate
The light-emitting device according claiml9, AIN. the metal-rich nitride thin film is a plurality of the material of the light-emitting stack layer is the material of the first buffer layer is G aN or the light-emitting device further comprises a and the metal-rich nitride thin film. the material of the second buffer layer is GaN or
Layer stacks claimed or described, ordered top of device to substrate.
GaN semiconductor device
light-emitting device
Materials described outside the worked examples.
metal-rich nitride thin film
first buffer layer semiconductor
MgSiN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,487,317Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a schematic diagram of a conventional semiconductor device structure.
FIG. 2 shows a schematic diagram of another type of conventional semiconductor device structure.
FIG. 3B. During the aforementioned epitaxial process, there are several epitaxial defects formed. The epitaxial defects are formed from the substrate surface …
FIGS. 4A-4C show a schematic diagram of a manufacturing process of a GaN semiconductor device in accordance of one embodiment of present invention.
FIG. 5A shows the 500-time optical microscope photo of the surface of the conventional semiconductor device with SiN buffer body. FIG 5 B shows the 500-time …
FIG. 6B shows a sectional diagram of a GaN semiconductor device in accordance with further another embodiment. Detailed Description of a Preferred Embodiments …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN semiconductor device, at least comprising: a substrate having an upper surface; an amorphous and single layer of metal-rich nitride thin film located on the substrate and having a top surface and a side surface; a first buffer layer bein g a semiconductor directly contactin g the top surface and the side surface of le -ated- on the metal-rich nitride thin film; and a semiconductor stack layer located on the first buffer layer, wherein the metal-rich nitride thin film partially covers the upper surface of the substrate.
The GaN semiconductor device according to claim 1, the semiconductor stack layer further comprises: a first conductive type semiconductor layer, located on the first buffer layer; an active layer, located on the first conductive type semiconductor layer; and a second conductive type semiconductor layer, located on the active layer.
The GaN semiconductor device according to claim 1, the material of the metal-rich nitride thin film comprises MgSiN, ZnSiN, MgGeN, or ZnGeN.
The GaN semiconductor device according to claim 1, the meta l element in the metal-rich nitride thin film is more than twice as much as the non-metal element in the metal-rich nitride thin film.
5, The GaN semiconductor device according to claim 1, the metal-rich -2- App l e. No. 12/382,955 Amendment dated: Reply to OA of: nitride thin film is a discontinuous thin film structure.
The G aN semiconductor device according to claim 1, the material of the first buffer layer comprises G aN or A IN.
The G aN semiconductor device according to claim 1, the GaN semiconductor device further comprises a second buffer layer located between the metal-rich nitride thin film and the substrate.
The G aN semiconductor device according to claim 1, the GaN semiconductor device further comprises at least one electrode on the semiconductor stack layer.
A light-emitting device, comprising: a substrate, having an upper surface; an amorphous and sing l e layer of metal-rich nitride thin film, located on the substrate and havin g a top surface and a side surface; a first buffer layer l oc ated-on bein g a semiconductor and directly contactin g the top surface and the side surface of the metal-rich thin film; a light-emitting stack l ayer, located on the first buffer layer; and at least one electrode, located on the light-emitting stack layer, wherein the -3- App l e. No. 1 2/382,955 Amendment dated: Reply to O A of: metal-rich nitride thin film partially covers the upper surface of the substrate.
The light-emitting device according to claim 11, the light-emitting stack layer further comprises: a first conductive type semiconductor layer, located on the substrate; a light-emitting layer, located on the first conductive type semiconductor layer; and a second conductive type semiconductor layer, located on the light-emitting layer.
The light-emitting device according claim 11, the metal element in the metal-rich nitride thin film is more than twice as much as the non-metal element in the metal-rich nitride thin film.
(Previously Amended) The light-emitting device according claim 11, the material of the metal-rich nitride thin film is MgSiN, ZnSiN, MgGeN, or ZnGeNs.
The light-emitting device according claim 11, the metal-rich nitride thin film is a discontinuous thin film structure.
The l ight-emitting device according claim 11, GaN series.
The light-emitting device according claim 11, AIN.
The light-emitting device according claim 11, second buffer layer, located between the substrate
The light-emitting device according claiml9, AIN. the metal-rich nitride thin film is a plurality of the material of the light-emitting stack layer is the material of the first buffer layer is G aN or the light-emitting device further comprises a and the metal-rich nitride thin film. the material of the second buffer layer is GaN or
Layer stacks claimed or described, ordered top of device to substrate.
GaN semiconductor device
light-emitting device
Materials described outside the worked examples.
metal-rich nitride thin film
first buffer layer semiconductor
MgSiN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,487,317Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a schematic diagram of a conventional semiconductor device structure.
FIG. 2 shows a schematic diagram of another type of conventional semiconductor device structure.
FIG. 3B. During the aforementioned epitaxial process, there are several epitaxial defects formed. The epitaxial defects are formed from the substrate surface …
FIGS. 4A-4C show a schematic diagram of a manufacturing process of a GaN semiconductor device in accordance of one embodiment of present invention.
FIG. 5A shows the 500-time optical microscope photo of the surface of the conventional semiconductor device with SiN buffer body. FIG 5 B shows the 500-time …
FIG. 6B shows a sectional diagram of a GaN semiconductor device in accordance with further another embodiment. Detailed Description of a Preferred Embodiments …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN semiconductor device, at least comprising: a substrate having an upper surface; an amorphous and single layer of metal-rich nitride thin film located on the substrate and having a top surface and a side surface; a first buffer layer bein g a semiconductor directly contactin g the top surface and the side surface of le -ated- on the metal-rich nitride thin film; and a semiconductor stack layer located on the first buffer layer, wherein the metal-rich nitride thin film partially covers the upper surface of the substrate.
The GaN semiconductor device according to claim 1, the semiconductor stack layer further comprises: a first conductive type semiconductor layer, located on the first buffer layer; an active layer, located on the first conductive type semiconductor layer; and a second conductive type semiconductor layer, located on the active layer.
The GaN semiconductor device according to claim 1, the material of the metal-rich nitride thin film comprises MgSiN, ZnSiN, MgGeN, or ZnGeN.
The GaN semiconductor device according to claim 1, the meta l element in the metal-rich nitride thin film is more than twice as much as the non-metal element in the metal-rich nitride thin film.
5, The GaN semiconductor device according to claim 1, the metal-rich -2- App l e. No. 12/382,955 Amendment dated: Reply to OA of: nitride thin film is a discontinuous thin film structure.
The G aN semiconductor device according to claim 1, the material of the first buffer layer comprises G aN or A IN.
The G aN semiconductor device according to claim 1, the GaN semiconductor device further comprises a second buffer layer located between the metal-rich nitride thin film and the substrate.
The G aN semiconductor device according to claim 1, the GaN semiconductor device further comprises at least one electrode on the semiconductor stack layer.
A light-emitting device, comprising: a substrate, having an upper surface; an amorphous and sing l e layer of metal-rich nitride thin film, located on the substrate and havin g a top surface and a side surface; a first buffer layer l oc ated-on bein g a semiconductor and directly contactin g the top surface and the side surface of the metal-rich thin film; a light-emitting stack l ayer, located on the first buffer layer; and at least one electrode, located on the light-emitting stack layer, wherein the -3- App l e. No. 1 2/382,955 Amendment dated: Reply to O A of: metal-rich nitride thin film partially covers the upper surface of the substrate.
The light-emitting device according to claim 11, the light-emitting stack layer further comprises: a first conductive type semiconductor layer, located on the substrate; a light-emitting layer, located on the first conductive type semiconductor layer; and a second conductive type semiconductor layer, located on the light-emitting layer.
The light-emitting device according claim 11, the metal element in the metal-rich nitride thin film is more than twice as much as the non-metal element in the metal-rich nitride thin film.
(Previously Amended) The light-emitting device according claim 11, the material of the metal-rich nitride thin film is MgSiN, ZnSiN, MgGeN, or ZnGeNs.
The light-emitting device according claim 11, the metal-rich nitride thin film is a discontinuous thin film structure.
The l ight-emitting device according claim 11, GaN series.
The light-emitting device according claim 11, AIN.
The light-emitting device according claim 11, second buffer layer, located between the substrate
The light-emitting device according claiml9, AIN. the metal-rich nitride thin film is a plurality of the material of the light-emitting stack layer is the material of the first buffer layer is G aN or the light-emitting device further comprises a and the metal-rich nitride thin film. the material of the second buffer layer is GaN or
Layer stacks claimed or described, ordered top of device to substrate.
GaN semiconductor device
light-emitting device
Materials described outside the worked examples.
metal-rich nitride thin film
first buffer layer semiconductor
MgSiN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,487,317Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a schematic diagram of a conventional semiconductor device structure.
FIG. 2 shows a schematic diagram of another type of conventional semiconductor device structure.
FIG. 3B. During the aforementioned epitaxial process, there are several epitaxial defects formed. The epitaxial defects are formed from the substrate surface …
FIGS. 4A-4C show a schematic diagram of a manufacturing process of a GaN semiconductor device in accordance of one embodiment of present invention.
FIG. 5A shows the 500-time optical microscope photo of the surface of the conventional semiconductor device with SiN buffer body. FIG 5 B shows the 500-time …
FIG. 6B shows a sectional diagram of a GaN semiconductor device in accordance with further another embodiment. Detailed Description of a Preferred Embodiments …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN semiconductor device, at least comprising: a substrate having an upper surface; an amorphous and single layer of metal-rich nitride thin film located on the substrate and having a top surface and a side surface; a first buffer layer bein g a semiconductor directly contactin g the top surface and the side surface of le -ated- on the metal-rich nitride thin film; and a semiconductor stack layer located on the first buffer layer, wherein the metal-rich nitride thin film partially covers the upper surface of the substrate.
The GaN semiconductor device according to claim 1, the semiconductor stack layer further comprises: a first conductive type semiconductor layer, located on the first buffer layer; an active layer, located on the first conductive type semiconductor layer; and a second conductive type semiconductor layer, located on the active layer.
The GaN semiconductor device according to claim 1, the material of the metal-rich nitride thin film comprises MgSiN, ZnSiN, MgGeN, or ZnGeN.
The GaN semiconductor device according to claim 1, the meta l element in the metal-rich nitride thin film is more than twice as much as the non-metal element in the metal-rich nitride thin film.
5, The GaN semiconductor device according to claim 1, the metal-rich -2- App l e. No. 12/382,955 Amendment dated: Reply to OA of: nitride thin film is a discontinuous thin film structure.
The G aN semiconductor device according to claim 1, the material of the first buffer layer comprises G aN or A IN.
The G aN semiconductor device according to claim 1, the GaN semiconductor device further comprises a second buffer layer located between the metal-rich nitride thin film and the substrate.
The G aN semiconductor device according to claim 1, the GaN semiconductor device further comprises at least one electrode on the semiconductor stack layer.
A light-emitting device, comprising: a substrate, having an upper surface; an amorphous and sing l e layer of metal-rich nitride thin film, located on the substrate and havin g a top surface and a side surface; a first buffer layer l oc ated-on bein g a semiconductor and directly contactin g the top surface and the side surface of the metal-rich thin film; a light-emitting stack l ayer, located on the first buffer layer; and at least one electrode, located on the light-emitting stack layer, wherein the -3- App l e. No. 1 2/382,955 Amendment dated: Reply to O A of: metal-rich nitride thin film partially covers the upper surface of the substrate.
The light-emitting device according to claim 11, the light-emitting stack layer further comprises: a first conductive type semiconductor layer, located on the substrate; a light-emitting layer, located on the first conductive type semiconductor layer; and a second conductive type semiconductor layer, located on the light-emitting layer.
The light-emitting device according claim 11, the metal element in the metal-rich nitride thin film is more than twice as much as the non-metal element in the metal-rich nitride thin film.
(Previously Amended) The light-emitting device according claim 11, the material of the metal-rich nitride thin film is MgSiN, ZnSiN, MgGeN, or ZnGeNs.
The light-emitting device according claim 11, the metal-rich nitride thin film is a discontinuous thin film structure.
The l ight-emitting device according claim 11, GaN series.
The light-emitting device according claim 11, AIN.
The light-emitting device according claim 11, second buffer layer, located between the substrate
The light-emitting device according claiml9, AIN. the metal-rich nitride thin film is a plurality of the material of the light-emitting stack layer is the material of the first buffer layer is G aN or the light-emitting device further comprises a and the metal-rich nitride thin film. the material of the second buffer layer is GaN or
Layer stacks claimed or described, ordered top of device to substrate.
GaN semiconductor device
light-emitting device
Materials described outside the worked examples.
metal-rich nitride thin film
first buffer layer semiconductor
MgSiN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
GaN semiconductor device (embodiment 400)
light-emitting diode device (embodiment 600)
ZnSiN
MgGeN
ZnGeN
GaN
AlN
sapphire
SiC
Si
ZnO
GaN semiconductor device (embodiment 400)
light-emitting diode device (embodiment 600)
ZnSiN
MgGeN
ZnGeN
GaN
AlN
sapphire
SiC
Si
ZnO
GaN semiconductor device (embodiment 400)
light-emitting diode device (embodiment 600)
ZnSiN
MgGeN
ZnGeN
GaN
AlN
sapphire
SiC
Si
ZnO
GaN semiconductor device (embodiment 400)
light-emitting diode device (embodiment 600)
ZnSiN
MgGeN
ZnGeN
GaN
AlN
sapphire
SiC
Si
ZnO