Patent
US 10,629,696METHOD FOR FORMING HEXAGONAL BORON NITRIDE THIN FILM, METHOD FOR FORMING MULTI-LAYERED STRUCTURE AND METHOD FOR MANUFACTURING SWITCHING ELEMENT USING THE SAME
Jaehyun PARK
US
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US 10,629,696Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1 B are cross-sectional views illustrating a method for forming a hexagonal boron nitride thin film according to an exemplary embodiment. [0016]
FIGS. 2A to 2C are cross- sectional views illustrating a method for forming a stacked structure of an h-BN thin film and a graphene thin film according to an …
FIGS. 3A to 3C are cross- sectional views illustrating a method for forming a stacked structure of an h-BN thin film and a graphene thin film according to …
FIGS. 4A to 4E are cross-sectional views illustrating a method for forming a stacked structure of an h-BN thin film and a graphene thin film according to another …
FIGS. 5A to 5E are cross-sectional views illustrating a method for manufacturing a switching element according to an exemplary embodiment. [0020] FIG 6 is an …
FIG. 7B, when the h-BN thin film was formed on the gamma-alumina thin film as Example 2, sp2 peak of N i s appears at 500 * C. Thus, it can be noted that …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a hexagonal boron nitride (h-BN) thin film, the method comprising: preparing an alumina thin film including amorphous alumina or gamma-alumina; and synthesizing an h-BN thin film at equal to or less than 750 0 C on the alumina thin film, wherein a mono-layer thickness of the h-BN film is equal to or less than 0.40 nm.
The method of claim 1, wherein amorphous alumina in the alumina thin film is crystallized and changed to gamma-alumina when the h-BN thin film is synthesized.
The method of claim 1, wherein the alumina thin film includes gamma-alumina, and has a thickness equal to or less than 100 nm, wherein (110) plane is more than 50% at an upper surface of the alumina thin film, and a root mean square roughness of the alumina thin film is equal to or less than 0.2 nm.
The method of claim 1, further comprising: physically adhering a masking block to a portion of an upper surface of the gamma- alumina thin film before the h-BN thin film is synthesized, wherein the h-BN thin film is selectively formed on an exposed upper surface of the gamma-alumina thin film.
The method of claim 1, wherein nitrogen atoms in the h-BN thin film are partially replaced by carbon atoms.
A method for forming a stacked structure, the method comprising: preparing an alumina thin film including amorphous alumina or gamma-alumina; synthesizing an h-BN thin film on the alumina thin film, wherein a mono-layer thickness of the h-BN film is equal to or less than 0.40 nm; and synthesizing a graphene thin film at an interface between the h-BN film and the alumina thin film.
The method of claim 6, wherein the alumina thin film includes gamma-alumina, and has a thickness equal to or less than 100 nm, wherein (110) plane is more than 50% at an upper surface of the alumina thin film, and a root mean square roughness of the alumina thin film is equal to or less than 0.2 nm.
The method of claim 6, wherein the graphene thin film is synthesized at equal to or less than 800 C, wherein a process gas provided for synthesizing the graphene thin film includes hydrocarbon gas.
The method of claim 6, further comprising: physically adhering a catalyst block including a catalyst material to an upper surface of the h-BN thin film before the graphene thin film is synthesized, wherein the graphene thin film includes a lower graphene thin film synthesized at the interface between the h-BN film and the alumina thin film, and un upper graphene thin film synthesized at the interface between the h-BN film and the catalyst block.
A method for manufacturing a switching element, the method comprising: forming a gate electrode on a substrate; forming an alumina thin film including amorphous alumina or gamma-alumina on the gate electrode; synthesizing an h-BN thin film on the alumina thin film, wherein a mono-layer thickness of the h-BN film is equal to or less than 0.40 nm; forming a channel layer including a two-dimensional active material on the h-BN thin film; and forming an electrode contacting the channel layer.
The method of claim 11, wherein the channel layer include graphene or transitional metal dichalcogenide.
The method of claim 11, wherein the thickness of the alumina thin film is equal to or less than 100 nm, and the thickness of the h-BN thin film is equal to or more than 2 nm
Layer stacks claimed or described, ordered top of device to substrate.
h-BN/graphene stacked structure
switching element (field-effect transistor)
Materials described outside the worked examples.
hexagonal boron nitride thin film
h-BN
amorphous alumina
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 5A to 5E are cross-sectional views illustrating a method for manufacturing a switching element according to an exemplary embodiment. [0020] FIG 6 is an …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
h-BN mono-layer thickness | ≤ 0.4 nm | h-BN |
gamma-alumina thin film thickness | ≤ 100 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,629,696Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1 B are cross-sectional views illustrating a method for forming a hexagonal boron nitride thin film according to an exemplary embodiment. [0016]
FIGS. 2A to 2C are cross- sectional views illustrating a method for forming a stacked structure of an h-BN thin film and a graphene thin film according to an …
FIGS. 3A to 3C are cross- sectional views illustrating a method for forming a stacked structure of an h-BN thin film and a graphene thin film according to …
FIGS. 4A to 4E are cross-sectional views illustrating a method for forming a stacked structure of an h-BN thin film and a graphene thin film according to another …
FIGS. 5A to 5E are cross-sectional views illustrating a method for manufacturing a switching element according to an exemplary embodiment. [0020] FIG 6 is an …
FIG. 7B, when the h-BN thin film was formed on the gamma-alumina thin film as Example 2, sp2 peak of N i s appears at 500 * C. Thus, it can be noted that …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a hexagonal boron nitride (h-BN) thin film, the method comprising: preparing an alumina thin film including amorphous alumina or gamma-alumina; and synthesizing an h-BN thin film at equal to or less than 750 0 C on the alumina thin film, wherein a mono-layer thickness of the h-BN film is equal to or less than 0.40 nm.
The method of claim 1, wherein amorphous alumina in the alumina thin film is crystallized and changed to gamma-alumina when the h-BN thin film is synthesized.
The method of claim 1, wherein the alumina thin film includes gamma-alumina, and has a thickness equal to or less than 100 nm, wherein (110) plane is more than 50% at an upper surface of the alumina thin film, and a root mean square roughness of the alumina thin film is equal to or less than 0.2 nm.
The method of claim 1, further comprising: physically adhering a masking block to a portion of an upper surface of the gamma- alumina thin film before the h-BN thin film is synthesized, wherein the h-BN thin film is selectively formed on an exposed upper surface of the gamma-alumina thin film.
The method of claim 1, wherein nitrogen atoms in the h-BN thin film are partially replaced by carbon atoms.
A method for forming a stacked structure, the method comprising: preparing an alumina thin film including amorphous alumina or gamma-alumina; synthesizing an h-BN thin film on the alumina thin film, wherein a mono-layer thickness of the h-BN film is equal to or less than 0.40 nm; and synthesizing a graphene thin film at an interface between the h-BN film and the alumina thin film.
The method of claim 6, wherein the alumina thin film includes gamma-alumina, and has a thickness equal to or less than 100 nm, wherein (110) plane is more than 50% at an upper surface of the alumina thin film, and a root mean square roughness of the alumina thin film is equal to or less than 0.2 nm.
The method of claim 6, wherein the graphene thin film is synthesized at equal to or less than 800 C, wherein a process gas provided for synthesizing the graphene thin film includes hydrocarbon gas.
The method of claim 6, further comprising: physically adhering a catalyst block including a catalyst material to an upper surface of the h-BN thin film before the graphene thin film is synthesized, wherein the graphene thin film includes a lower graphene thin film synthesized at the interface between the h-BN film and the alumina thin film, and un upper graphene thin film synthesized at the interface between the h-BN film and the catalyst block.
A method for manufacturing a switching element, the method comprising: forming a gate electrode on a substrate; forming an alumina thin film including amorphous alumina or gamma-alumina on the gate electrode; synthesizing an h-BN thin film on the alumina thin film, wherein a mono-layer thickness of the h-BN film is equal to or less than 0.40 nm; forming a channel layer including a two-dimensional active material on the h-BN thin film; and forming an electrode contacting the channel layer.
The method of claim 11, wherein the channel layer include graphene or transitional metal dichalcogenide.
The method of claim 11, wherein the thickness of the alumina thin film is equal to or less than 100 nm, and the thickness of the h-BN thin film is equal to or more than 2 nm
Layer stacks claimed or described, ordered top of device to substrate.
h-BN/graphene stacked structure
switching element (field-effect transistor)
Materials described outside the worked examples.
hexagonal boron nitride thin film
h-BN
amorphous alumina
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 5A to 5E are cross-sectional views illustrating a method for manufacturing a switching element according to an exemplary embodiment. [0020] FIG 6 is an …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
h-BN mono-layer thickness | ≤ 0.4 nm | h-BN |
gamma-alumina thin film thickness | ≤ 100 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,629,696Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1 B are cross-sectional views illustrating a method for forming a hexagonal boron nitride thin film according to an exemplary embodiment. [0016]
FIGS. 2A to 2C are cross- sectional views illustrating a method for forming a stacked structure of an h-BN thin film and a graphene thin film according to an …
FIGS. 3A to 3C are cross- sectional views illustrating a method for forming a stacked structure of an h-BN thin film and a graphene thin film according to …
FIGS. 4A to 4E are cross-sectional views illustrating a method for forming a stacked structure of an h-BN thin film and a graphene thin film according to another …
FIGS. 5A to 5E are cross-sectional views illustrating a method for manufacturing a switching element according to an exemplary embodiment. [0020] FIG 6 is an …
FIG. 7B, when the h-BN thin film was formed on the gamma-alumina thin film as Example 2, sp2 peak of N i s appears at 500 * C. Thus, it can be noted that …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a hexagonal boron nitride (h-BN) thin film, the method comprising: preparing an alumina thin film including amorphous alumina or gamma-alumina; and synthesizing an h-BN thin film at equal to or less than 750 0 C on the alumina thin film, wherein a mono-layer thickness of the h-BN film is equal to or less than 0.40 nm.
The method of claim 1, wherein amorphous alumina in the alumina thin film is crystallized and changed to gamma-alumina when the h-BN thin film is synthesized.
The method of claim 1, wherein the alumina thin film includes gamma-alumina, and has a thickness equal to or less than 100 nm, wherein (110) plane is more than 50% at an upper surface of the alumina thin film, and a root mean square roughness of the alumina thin film is equal to or less than 0.2 nm.
The method of claim 1, further comprising: physically adhering a masking block to a portion of an upper surface of the gamma- alumina thin film before the h-BN thin film is synthesized, wherein the h-BN thin film is selectively formed on an exposed upper surface of the gamma-alumina thin film.
The method of claim 1, wherein nitrogen atoms in the h-BN thin film are partially replaced by carbon atoms.
A method for forming a stacked structure, the method comprising: preparing an alumina thin film including amorphous alumina or gamma-alumina; synthesizing an h-BN thin film on the alumina thin film, wherein a mono-layer thickness of the h-BN film is equal to or less than 0.40 nm; and synthesizing a graphene thin film at an interface between the h-BN film and the alumina thin film.
The method of claim 6, wherein the alumina thin film includes gamma-alumina, and has a thickness equal to or less than 100 nm, wherein (110) plane is more than 50% at an upper surface of the alumina thin film, and a root mean square roughness of the alumina thin film is equal to or less than 0.2 nm.
The method of claim 6, wherein the graphene thin film is synthesized at equal to or less than 800 C, wherein a process gas provided for synthesizing the graphene thin film includes hydrocarbon gas.
The method of claim 6, further comprising: physically adhering a catalyst block including a catalyst material to an upper surface of the h-BN thin film before the graphene thin film is synthesized, wherein the graphene thin film includes a lower graphene thin film synthesized at the interface between the h-BN film and the alumina thin film, and un upper graphene thin film synthesized at the interface between the h-BN film and the catalyst block.
A method for manufacturing a switching element, the method comprising: forming a gate electrode on a substrate; forming an alumina thin film including amorphous alumina or gamma-alumina on the gate electrode; synthesizing an h-BN thin film on the alumina thin film, wherein a mono-layer thickness of the h-BN film is equal to or less than 0.40 nm; forming a channel layer including a two-dimensional active material on the h-BN thin film; and forming an electrode contacting the channel layer.
The method of claim 11, wherein the channel layer include graphene or transitional metal dichalcogenide.
The method of claim 11, wherein the thickness of the alumina thin film is equal to or less than 100 nm, and the thickness of the h-BN thin film is equal to or more than 2 nm
Layer stacks claimed or described, ordered top of device to substrate.
h-BN/graphene stacked structure
switching element (field-effect transistor)
Materials described outside the worked examples.
hexagonal boron nitride thin film
h-BN
amorphous alumina
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 5A to 5E are cross-sectional views illustrating a method for manufacturing a switching element according to an exemplary embodiment. [0020] FIG 6 is an …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
h-BN mono-layer thickness | ≤ 0.4 nm | h-BN |
gamma-alumina thin film thickness | ≤ 100 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,629,696Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1 B are cross-sectional views illustrating a method for forming a hexagonal boron nitride thin film according to an exemplary embodiment. [0016]
FIGS. 2A to 2C are cross- sectional views illustrating a method for forming a stacked structure of an h-BN thin film and a graphene thin film according to an …
FIGS. 3A to 3C are cross- sectional views illustrating a method for forming a stacked structure of an h-BN thin film and a graphene thin film according to …
FIGS. 4A to 4E are cross-sectional views illustrating a method for forming a stacked structure of an h-BN thin film and a graphene thin film according to another …
FIGS. 5A to 5E are cross-sectional views illustrating a method for manufacturing a switching element according to an exemplary embodiment. [0020] FIG 6 is an …
FIG. 7B, when the h-BN thin film was formed on the gamma-alumina thin film as Example 2, sp2 peak of N i s appears at 500 * C. Thus, it can be noted that …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a hexagonal boron nitride (h-BN) thin film, the method comprising: preparing an alumina thin film including amorphous alumina or gamma-alumina; and synthesizing an h-BN thin film at equal to or less than 750 0 C on the alumina thin film, wherein a mono-layer thickness of the h-BN film is equal to or less than 0.40 nm.
The method of claim 1, wherein amorphous alumina in the alumina thin film is crystallized and changed to gamma-alumina when the h-BN thin film is synthesized.
The method of claim 1, wherein the alumina thin film includes gamma-alumina, and has a thickness equal to or less than 100 nm, wherein (110) plane is more than 50% at an upper surface of the alumina thin film, and a root mean square roughness of the alumina thin film is equal to or less than 0.2 nm.
The method of claim 1, further comprising: physically adhering a masking block to a portion of an upper surface of the gamma- alumina thin film before the h-BN thin film is synthesized, wherein the h-BN thin film is selectively formed on an exposed upper surface of the gamma-alumina thin film.
The method of claim 1, wherein nitrogen atoms in the h-BN thin film are partially replaced by carbon atoms.
A method for forming a stacked structure, the method comprising: preparing an alumina thin film including amorphous alumina or gamma-alumina; synthesizing an h-BN thin film on the alumina thin film, wherein a mono-layer thickness of the h-BN film is equal to or less than 0.40 nm; and synthesizing a graphene thin film at an interface between the h-BN film and the alumina thin film.
The method of claim 6, wherein the alumina thin film includes gamma-alumina, and has a thickness equal to or less than 100 nm, wherein (110) plane is more than 50% at an upper surface of the alumina thin film, and a root mean square roughness of the alumina thin film is equal to or less than 0.2 nm.
The method of claim 6, wherein the graphene thin film is synthesized at equal to or less than 800 C, wherein a process gas provided for synthesizing the graphene thin film includes hydrocarbon gas.
The method of claim 6, further comprising: physically adhering a catalyst block including a catalyst material to an upper surface of the h-BN thin film before the graphene thin film is synthesized, wherein the graphene thin film includes a lower graphene thin film synthesized at the interface between the h-BN film and the alumina thin film, and un upper graphene thin film synthesized at the interface between the h-BN film and the catalyst block.
A method for manufacturing a switching element, the method comprising: forming a gate electrode on a substrate; forming an alumina thin film including amorphous alumina or gamma-alumina on the gate electrode; synthesizing an h-BN thin film on the alumina thin film, wherein a mono-layer thickness of the h-BN film is equal to or less than 0.40 nm; forming a channel layer including a two-dimensional active material on the h-BN thin film; and forming an electrode contacting the channel layer.
The method of claim 11, wherein the channel layer include graphene or transitional metal dichalcogenide.
The method of claim 11, wherein the thickness of the alumina thin film is equal to or less than 100 nm, and the thickness of the h-BN thin film is equal to or more than 2 nm
Layer stacks claimed or described, ordered top of device to substrate.
h-BN/graphene stacked structure
switching element (field-effect transistor)
Materials described outside the worked examples.
hexagonal boron nitride thin film
h-BN
amorphous alumina
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 5A to 5E are cross-sectional views illustrating a method for manufacturing a switching element according to an exemplary embodiment. [0020] FIG 6 is an …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
h-BN mono-layer thickness | ≤ 0.4 nm | h-BN |
gamma-alumina thin film thickness | ≤ 100 nm |
Related documents with shared materials, methods, properties, or citations.
gamma-alumina
γ-Al₂O₃
graphene
C
two-dimensional active material
transition metal dichalcogenide
trimethyl aluminium
(CH₃)3Al
borazine
B₃N₃H₆
FIGS. 5A to 5E are cross-sectional views illustrating a method for manufacturing a switching element according to an exemplary embodiment. [0020] FIG 6 is an …
FIGS. 5A to 5E are cross-sectional views illustrating a method for manufacturing a switching element according to an exemplary embodiment. [0020] FIG 6 is an …
h-BN thin film thickness for switching element | ≥ 2 nm | h-BN |
root mean square roughness of gamma-alumina thin film | ≤ 0.2 nm | γ-Al₂O₃ |
Thickness | 2–20 nm | — |
Duration | 1–30 minutes | — |
— | 0.00001 eV | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 0.8 nm | — |
Thickness | ≤ 0.36 nm | — |
Thickness | ≤ 0.72 nm | — |
Pressure | ≤ 2 atm | — |
Thickness | ≥ 0.33 nm | — |
gamma-alumina
γ-Al₂O₃
graphene
C
two-dimensional active material
transition metal dichalcogenide
trimethyl aluminium
(CH₃)3Al
borazine
B₃N₃H₆
FIGS. 5A to 5E are cross-sectional views illustrating a method for manufacturing a switching element according to an exemplary embodiment. [0020] FIG 6 is an …
FIGS. 5A to 5E are cross-sectional views illustrating a method for manufacturing a switching element according to an exemplary embodiment. [0020] FIG 6 is an …
h-BN thin film thickness for switching element | ≥ 2 nm | h-BN |
root mean square roughness of gamma-alumina thin film | ≤ 0.2 nm | γ-Al₂O₃ |
Thickness | 2–20 nm | — |
Duration | 1–30 minutes | — |
— | 0.00001 eV | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 0.8 nm | — |
Thickness | ≤ 0.36 nm | — |
Thickness | ≤ 0.72 nm | — |
Pressure | ≤ 2 atm | — |
Thickness | ≥ 0.33 nm | — |
gamma-alumina
γ-Al₂O₃
graphene
C
two-dimensional active material
transition metal dichalcogenide
trimethyl aluminium
(CH₃)3Al
borazine
B₃N₃H₆
FIGS. 5A to 5E are cross-sectional views illustrating a method for manufacturing a switching element according to an exemplary embodiment. [0020] FIG 6 is an …
FIGS. 5A to 5E are cross-sectional views illustrating a method for manufacturing a switching element according to an exemplary embodiment. [0020] FIG 6 is an …
h-BN thin film thickness for switching element | ≥ 2 nm | h-BN |
root mean square roughness of gamma-alumina thin film | ≤ 0.2 nm | γ-Al₂O₃ |
Thickness | 2–20 nm | — |
Duration | 1–30 minutes | — |
— | 0.00001 eV | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 0.8 nm | — |
Thickness | ≤ 0.36 nm | — |
Thickness | ≤ 0.72 nm | — |
Pressure | ≤ 2 atm | — |
Thickness | ≥ 0.33 nm | — |
gamma-alumina
γ-Al₂O₃
graphene
C
two-dimensional active material
transition metal dichalcogenide
trimethyl aluminium
(CH₃)3Al
borazine
B₃N₃H₆
FIGS. 5A to 5E are cross-sectional views illustrating a method for manufacturing a switching element according to an exemplary embodiment. [0020] FIG 6 is an …
FIGS. 5A to 5E are cross-sectional views illustrating a method for manufacturing a switching element according to an exemplary embodiment. [0020] FIG 6 is an …
h-BN thin film thickness for switching element | ≥ 2 nm | h-BN |
root mean square roughness of gamma-alumina thin film | ≤ 0.2 nm | γ-Al₂O₃ |
Thickness | 2–20 nm | — |
Duration | 1–30 minutes | — |
— | 0.00001 eV | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 0.8 nm | — |
Thickness | ≤ 0.36 nm | — |
Thickness | ≤ 0.72 nm | — |
Pressure | ≤ 2 atm | — |
Thickness | ≥ 0.33 nm | — |