Patent
US 9,431,258METHOD FOR PHOTODEPOSITING A PARTICLE ON A GRAPHENE-SEMICONDUCTOR HYBRID PANEL AND A SEMICONDUCTOR STRUCTURE
Chun-Hu CHEN
US
Copyright © 2026 Matter42. All rights reserved.
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for photodepositing a particle on a graphene- semiconductor hybrid panel, comprising: providing a graphene-semiconductor hybrid panel comprising a semiconductor substrate and a graphene sheet, wherein the graphene sheet is adhered to a surface of the semiconductor substrate; dipping the graphene-semiconductor hybrid panel in a fluid, wherein the fluid contains a precursor; and forming photoinduced electrons and holes in the semiconductor substrate by irradiating the graphene semiconductor hybrid panel substrate using a light source, until the precursor has been reduced or oxidized to form a particle photodeposited on a surface of the graphene sheet by the photoinduced electrons or holes transferred to thegraphene sheet, wherein the light source has an energy equal to or higher than a band gap of the semiconductor substrate.
The method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in claim 1, wherein the graphene sheet is made by chemical vapor deposition and wet transfer.
The method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in claim 1, wherein the semiconductor substrate is made of titanium dioxide or zin c oxide.
The method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in claim 1, wherein the graphene sheet is formed of a graphene layer or a plurality of graphene layers.
The method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in claim 1, wherein the particle is made of metal, alloy or metal oxide.
The method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in claim 1, wherein the graphene sheet is made by chemical vapor deposition and wet transfer, wherein the semiconductor substrate is made of titanium dioxide, wherein the graphene sheet is formed of three graphene layers, and wherein the particle is made of gold.
A semiconductor structure made by the method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in any one of claim 1-8, comprising: a semiconductor substrate; a graphene sheet having a first surface and a second surface opposite to the first surface, wherein the first surface of the graphene sheet is adhered to the semiconductor substrate; and a particle deposited on the second surface of the graphene sheet.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-semiconductor hybrid panel with photodeposited particles
Materials described outside the worked examples.
semiconductor substrate
graphene sheet
particle (metal, alloy, or metal oxide)
titanium dioxide
TiO₂
zinc oxide
ZnO
gold
Au
silver
Ag
manganese dioxide
MnO₂
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
aluminum oxide
Al₂O₃
tantalum(III) oxide
Ta₂O₃
hafnium(IV) oxide
HfO₂
zirconium dioxide
ZrO₂
lanthanum oxide
La₂O₃
yttrium(III) oxide
Y₂O₃
cadmium oxide
Cd₂O₃
erbium oxide
Er₂O₃
neodymium(III) oxide
Nd₂O₃
praseodymium(IV) oxide
PrO₂
cerium(IV) oxide
CeO₂
gallium nitride
GaN
gallium arsenide
GaAs
zinc sulfide
ZnS
indium nitride
InN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.6–1.5 nm | — |
Thickness | 0.8–0.9 nm | — |
Pressure | 0.001 Torr | — |
Related documents with shared materials, methods, properties, or citations.
OPTICAL MODULATOR, IMAGING DEVICE AND DISPLAY APPARATUS INCLUDING A DIELECTRIC LAYER AND AN ELECTRODE COMPRISING GRAPHENE
Method of Forming Graphene on A Surface
METHOD FOR FORMING A SEMICONDUCTOR DEVICE COMPRISING A SELECTIVELY GROWN GRAPHENE LAYER
GRAPHENE ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR MANUFACTURING MONOCRYSTALLINE GRAPHENE
NANOTUBE AND GRAPHENE SEMICONDUCTOR STRUCTURES WITH VARYING ELECTRICAL PROPERTIES
GRAPHENE SHEET AND METHOD FOR PRODUCING THE SAME
METHOD AND DEVICE FOR FINFET WITH GRAPHENE NANORIBBON
GRAPHENE SYNTHESIS BY CHEMICAL VAPOR DEPOSITION
DIRECT CHEMICAL VAPOR DEPOSITION OF GRAPHENE ON DIELECTRIC SURFACES
METHOD FOR PRODUCING GRAPHENE OXIDE WITH TUNABLE GAP
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for photodepositing a particle on a graphene- semiconductor hybrid panel, comprising: providing a graphene-semiconductor hybrid panel comprising a semiconductor substrate and a graphene sheet, wherein the graphene sheet is adhered to a surface of the semiconductor substrate; dipping the graphene-semiconductor hybrid panel in a fluid, wherein the fluid contains a precursor; and forming photoinduced electrons and holes in the semiconductor substrate by irradiating the graphene semiconductor hybrid panel substrate using a light source, until the precursor has been reduced or oxidized to form a particle photodeposited on a surface of the graphene sheet by the photoinduced electrons or holes transferred to thegraphene sheet, wherein the light source has an energy equal to or higher than a band gap of the semiconductor substrate.
The method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in claim 1, wherein the graphene sheet is made by chemical vapor deposition and wet transfer.
The method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in claim 1, wherein the semiconductor substrate is made of titanium dioxide or zin c oxide.
The method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in claim 1, wherein the graphene sheet is formed of a graphene layer or a plurality of graphene layers.
The method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in claim 1, wherein the particle is made of metal, alloy or metal oxide.
The method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in claim 1, wherein the graphene sheet is made by chemical vapor deposition and wet transfer, wherein the semiconductor substrate is made of titanium dioxide, wherein the graphene sheet is formed of three graphene layers, and wherein the particle is made of gold.
A semiconductor structure made by the method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in any one of claim 1-8, comprising: a semiconductor substrate; a graphene sheet having a first surface and a second surface opposite to the first surface, wherein the first surface of the graphene sheet is adhered to the semiconductor substrate; and a particle deposited on the second surface of the graphene sheet.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-semiconductor hybrid panel with photodeposited particles
Materials described outside the worked examples.
semiconductor substrate
graphene sheet
particle (metal, alloy, or metal oxide)
titanium dioxide
TiO₂
zinc oxide
ZnO
gold
Au
silver
Ag
manganese dioxide
MnO₂
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
aluminum oxide
Al₂O₃
tantalum(III) oxide
Ta₂O₃
hafnium(IV) oxide
HfO₂
zirconium dioxide
ZrO₂
lanthanum oxide
La₂O₃
yttrium(III) oxide
Y₂O₃
cadmium oxide
Cd₂O₃
erbium oxide
Er₂O₃
neodymium(III) oxide
Nd₂O₃
praseodymium(IV) oxide
PrO₂
cerium(IV) oxide
CeO₂
gallium nitride
GaN
gallium arsenide
GaAs
zinc sulfide
ZnS
indium nitride
InN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.6–1.5 nm | — |
Thickness | 0.8–0.9 nm | — |
Pressure | 0.001 Torr | — |
Related documents with shared materials, methods, properties, or citations.
OPTICAL MODULATOR, IMAGING DEVICE AND DISPLAY APPARATUS INCLUDING A DIELECTRIC LAYER AND AN ELECTRODE COMPRISING GRAPHENE
Method of Forming Graphene on A Surface
METHOD FOR FORMING A SEMICONDUCTOR DEVICE COMPRISING A SELECTIVELY GROWN GRAPHENE LAYER
GRAPHENE ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR MANUFACTURING MONOCRYSTALLINE GRAPHENE
NANOTUBE AND GRAPHENE SEMICONDUCTOR STRUCTURES WITH VARYING ELECTRICAL PROPERTIES
GRAPHENE SHEET AND METHOD FOR PRODUCING THE SAME
METHOD AND DEVICE FOR FINFET WITH GRAPHENE NANORIBBON
GRAPHENE SYNTHESIS BY CHEMICAL VAPOR DEPOSITION
DIRECT CHEMICAL VAPOR DEPOSITION OF GRAPHENE ON DIELECTRIC SURFACES
METHOD FOR PRODUCING GRAPHENE OXIDE WITH TUNABLE GAP
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for photodepositing a particle on a graphene- semiconductor hybrid panel, comprising: providing a graphene-semiconductor hybrid panel comprising a semiconductor substrate and a graphene sheet, wherein the graphene sheet is adhered to a surface of the semiconductor substrate; dipping the graphene-semiconductor hybrid panel in a fluid, wherein the fluid contains a precursor; and forming photoinduced electrons and holes in the semiconductor substrate by irradiating the graphene semiconductor hybrid panel substrate using a light source, until the precursor has been reduced or oxidized to form a particle photodeposited on a surface of the graphene sheet by the photoinduced electrons or holes transferred to thegraphene sheet, wherein the light source has an energy equal to or higher than a band gap of the semiconductor substrate.
The method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in claim 1, wherein the graphene sheet is made by chemical vapor deposition and wet transfer.
The method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in claim 1, wherein the semiconductor substrate is made of titanium dioxide or zin c oxide.
The method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in claim 1, wherein the graphene sheet is formed of a graphene layer or a plurality of graphene layers.
The method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in claim 1, wherein the particle is made of metal, alloy or metal oxide.
The method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in claim 1, wherein the graphene sheet is made by chemical vapor deposition and wet transfer, wherein the semiconductor substrate is made of titanium dioxide, wherein the graphene sheet is formed of three graphene layers, and wherein the particle is made of gold.
A semiconductor structure made by the method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in any one of claim 1-8, comprising: a semiconductor substrate; a graphene sheet having a first surface and a second surface opposite to the first surface, wherein the first surface of the graphene sheet is adhered to the semiconductor substrate; and a particle deposited on the second surface of the graphene sheet.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-semiconductor hybrid panel with photodeposited particles
Materials described outside the worked examples.
semiconductor substrate
graphene sheet
particle (metal, alloy, or metal oxide)
titanium dioxide
TiO₂
zinc oxide
ZnO
gold
Au
silver
Ag
manganese dioxide
MnO₂
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
aluminum oxide
Al₂O₃
tantalum(III) oxide
Ta₂O₃
hafnium(IV) oxide
HfO₂
zirconium dioxide
ZrO₂
lanthanum oxide
La₂O₃
yttrium(III) oxide
Y₂O₃
cadmium oxide
Cd₂O₃
erbium oxide
Er₂O₃
neodymium(III) oxide
Nd₂O₃
praseodymium(IV) oxide
PrO₂
cerium(IV) oxide
CeO₂
gallium nitride
GaN
gallium arsenide
GaAs
zinc sulfide
ZnS
indium nitride
InN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.6–1.5 nm | — |
Thickness | 0.8–0.9 nm | — |
Pressure | 0.001 Torr | — |
Related documents with shared materials, methods, properties, or citations.
OPTICAL MODULATOR, IMAGING DEVICE AND DISPLAY APPARATUS INCLUDING A DIELECTRIC LAYER AND AN ELECTRODE COMPRISING GRAPHENE
Method of Forming Graphene on A Surface
METHOD FOR FORMING A SEMICONDUCTOR DEVICE COMPRISING A SELECTIVELY GROWN GRAPHENE LAYER
GRAPHENE ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR MANUFACTURING MONOCRYSTALLINE GRAPHENE
NANOTUBE AND GRAPHENE SEMICONDUCTOR STRUCTURES WITH VARYING ELECTRICAL PROPERTIES
GRAPHENE SHEET AND METHOD FOR PRODUCING THE SAME
METHOD AND DEVICE FOR FINFET WITH GRAPHENE NANORIBBON
GRAPHENE SYNTHESIS BY CHEMICAL VAPOR DEPOSITION
DIRECT CHEMICAL VAPOR DEPOSITION OF GRAPHENE ON DIELECTRIC SURFACES
METHOD FOR PRODUCING GRAPHENE OXIDE WITH TUNABLE GAP
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for photodepositing a particle on a graphene- semiconductor hybrid panel, comprising: providing a graphene-semiconductor hybrid panel comprising a semiconductor substrate and a graphene sheet, wherein the graphene sheet is adhered to a surface of the semiconductor substrate; dipping the graphene-semiconductor hybrid panel in a fluid, wherein the fluid contains a precursor; and forming photoinduced electrons and holes in the semiconductor substrate by irradiating the graphene semiconductor hybrid panel substrate using a light source, until the precursor has been reduced or oxidized to form a particle photodeposited on a surface of the graphene sheet by the photoinduced electrons or holes transferred to thegraphene sheet, wherein the light source has an energy equal to or higher than a band gap of the semiconductor substrate.
The method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in claim 1, wherein the graphene sheet is made by chemical vapor deposition and wet transfer.
The method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in claim 1, wherein the semiconductor substrate is made of titanium dioxide or zin c oxide.
The method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in claim 1, wherein the graphene sheet is formed of a graphene layer or a plurality of graphene layers.
The method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in claim 1, wherein the particle is made of metal, alloy or metal oxide.
The method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in claim 1, wherein the graphene sheet is made by chemical vapor deposition and wet transfer, wherein the semiconductor substrate is made of titanium dioxide, wherein the graphene sheet is formed of three graphene layers, and wherein the particle is made of gold.
A semiconductor structure made by the method for photodepositing the particle on the graphene-semiconductor hybrid panel as claimed in any one of claim 1-8, comprising: a semiconductor substrate; a graphene sheet having a first surface and a second surface opposite to the first surface, wherein the first surface of the graphene sheet is adhered to the semiconductor substrate; and a particle deposited on the second surface of the graphene sheet.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-semiconductor hybrid panel with photodeposited particles
Materials described outside the worked examples.
semiconductor substrate
graphene sheet
particle (metal, alloy, or metal oxide)
titanium dioxide
TiO₂
zinc oxide
ZnO
gold
Au
silver
Ag
manganese dioxide
MnO₂
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
aluminum oxide
Al₂O₃
tantalum(III) oxide
Ta₂O₃
hafnium(IV) oxide
HfO₂
zirconium dioxide
ZrO₂
lanthanum oxide
La₂O₃
yttrium(III) oxide
Y₂O₃
cadmium oxide
Cd₂O₃
erbium oxide
Er₂O₃
neodymium(III) oxide
Nd₂O₃
praseodymium(IV) oxide
PrO₂
cerium(IV) oxide
CeO₂
gallium nitride
GaN
gallium arsenide
GaAs
zinc sulfide
ZnS
indium nitride
InN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.6–1.5 nm | — |
Thickness | 0.8–0.9 nm | — |
Pressure | 0.001 Torr | — |
Related documents with shared materials, methods, properties, or citations.
OPTICAL MODULATOR, IMAGING DEVICE AND DISPLAY APPARATUS INCLUDING A DIELECTRIC LAYER AND AN ELECTRODE COMPRISING GRAPHENE
Method of Forming Graphene on A Surface
METHOD FOR FORMING A SEMICONDUCTOR DEVICE COMPRISING A SELECTIVELY GROWN GRAPHENE LAYER
GRAPHENE ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR MANUFACTURING MONOCRYSTALLINE GRAPHENE
NANOTUBE AND GRAPHENE SEMICONDUCTOR STRUCTURES WITH VARYING ELECTRICAL PROPERTIES
GRAPHENE SHEET AND METHOD FOR PRODUCING THE SAME
METHOD AND DEVICE FOR FINFET WITH GRAPHENE NANORIBBON
GRAPHENE SYNTHESIS BY CHEMICAL VAPOR DEPOSITION
DIRECT CHEMICAL VAPOR DEPOSITION OF GRAPHENE ON DIELECTRIC SURFACES
METHOD FOR PRODUCING GRAPHENE OXIDE WITH TUNABLE GAP