Patent
US 9,390,828CRYSTALLOGRAPHICALLY-ORIENTED CARBON NANOTUBES GROWN ON FEW-LAYER GRAPHENE FILMS
Douglas Robert Strachan
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,390,828Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A thermal and electrical conducting apparatus, comprising: a few layer graphene film having a thickness of 6 atomic layers or less; a substrate supporting the few layer graphene film; and a plurality of carbon nanotubes crystallographically al igned with said few-layer graphene film, wherein said plurality of carbon nanotubes further comprises out of plane growth perpendicular to the few layer graphene film.
The apparatus of claim 1 wherein said substrate is made from an insulator.
The apparatus of claim 1 claim 2, wherein said substrate is made from metal.
The apparatus of claim 1 claim 2, wherein said substrate is made from a material selected from a group consisting of SiO 2, A 1 2 O 3, Si 3 N 4, BN, HfSiO 4, ZrSiO 4, Hf O 2, ZrO 2 and mixtures thereof.
The apparatus of claim 1 claim 2, wherein said substrate is made from a material selected from a group consisting of Ni, Cu, Pt, Au, Co, Fe and mixtures thereof.
The apparatus of claim 1, wherein said few-layer graphene film has a thickness D, where D SVG 13632187.02-02-2016.IK₈G₀CHCPXXIFW2.CLM.1.22.540.2513.561.2542.svg 0.097 0.07 Chemistry Black and white 1. O nm.
The apparatus of claim 1, wherein said carbon nanotubes demonstrate three distinct histogram peaks at angles of -60", about 0" and about +60 0 in relation to any of the peaks. 2 App l n. No. 13/632,187 Response dated Reply to final Office Action
canceled
A method of growing carbon nanotubes on a few-layer graphene film, comprising; applying catalyst particles to a few-layer graphene film having a thickness D, where D < 1.5nm; and growing carbon nanotubes on said few-layer graphene film in crystallographic alignment with said few-layer graphene film so that said carbon nanotubes demonstrate three distinct histogram peaks at angles of about -60", about 0 0 and about SVG 13632187.02-02-2016.IK₈G₀CHCPXXIFW2.CLM.2.10.1534.977.1622.1010.svg 0.11 0.293 Chemistry Black and white. withdrawn
The method of claim 9 including using chemical vapor deposition without a carbon feedstock gas to grow said carbon nanotubes. withdrawn
The method of claim 9, including using electron-beam evaporation to form catalyst particles on said few-layer graphene film. withdrawn
The method of claim 9, further including cleaning a substrate and applying few-layer graphene to said cleaned substrate. withdrawn
The method of claim 9 including growing said carbon nanotubes in two stages: a first stage of said two stages including growing said carbon nanotubes at a first temperature of between about 850 " C to about 950 " C using a first rate of vapor feedstock (R 1) amount of solid carbon feedstock so as to promote growth in a first orientation along a surface of said few-layer graphene film; and a second stage of said two stages including growing said carbon nanotubes at a second, higher temperature of between about 900 " C to about 1,100 " C using a second rate of feedstock (R 2), so as to promote growth in a second orientation substantially perpendicular to said surface of said few-layer graphene film. withdrawn
The method of claim 9, including removing said crystallographically al igned carbon nanotubes from said few-layer graphene film while maintaining said crystallographic alignment of said carbon nanotubes. withdrawn
The method of claim 9 including using thermal vapor deposition with graphene carbon feedstock layers to grow said carbon nanotubes on remaining few-layer graphene film. withdrawn
The method of claim 9 including using metal containing salt solution to form catalyst particles on said few-layer graphene film. 5 withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
thermal and electrical conducting apparatus
Materials described outside the worked examples.
few-layer graphene film
carbon nanotubes
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 10–120 minutes | — |
Duration | 1–120 minutes |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,390,828Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A thermal and electrical conducting apparatus, comprising: a few layer graphene film having a thickness of 6 atomic layers or less; a substrate supporting the few layer graphene film; and a plurality of carbon nanotubes crystallographically al igned with said few-layer graphene film, wherein said plurality of carbon nanotubes further comprises out of plane growth perpendicular to the few layer graphene film.
The apparatus of claim 1 wherein said substrate is made from an insulator.
The apparatus of claim 1 claim 2, wherein said substrate is made from metal.
The apparatus of claim 1 claim 2, wherein said substrate is made from a material selected from a group consisting of SiO 2, A 1 2 O 3, Si 3 N 4, BN, HfSiO 4, ZrSiO 4, Hf O 2, ZrO 2 and mixtures thereof.
The apparatus of claim 1 claim 2, wherein said substrate is made from a material selected from a group consisting of Ni, Cu, Pt, Au, Co, Fe and mixtures thereof.
The apparatus of claim 1, wherein said few-layer graphene film has a thickness D, where D SVG 13632187.02-02-2016.IK₈G₀CHCPXXIFW2.CLM.1.22.540.2513.561.2542.svg 0.097 0.07 Chemistry Black and white 1. O nm.
The apparatus of claim 1, wherein said carbon nanotubes demonstrate three distinct histogram peaks at angles of -60", about 0" and about +60 0 in relation to any of the peaks. 2 App l n. No. 13/632,187 Response dated Reply to final Office Action
canceled
A method of growing carbon nanotubes on a few-layer graphene film, comprising; applying catalyst particles to a few-layer graphene film having a thickness D, where D < 1.5nm; and growing carbon nanotubes on said few-layer graphene film in crystallographic alignment with said few-layer graphene film so that said carbon nanotubes demonstrate three distinct histogram peaks at angles of about -60", about 0 0 and about SVG 13632187.02-02-2016.IK₈G₀CHCPXXIFW2.CLM.2.10.1534.977.1622.1010.svg 0.11 0.293 Chemistry Black and white. withdrawn
The method of claim 9 including using chemical vapor deposition without a carbon feedstock gas to grow said carbon nanotubes. withdrawn
The method of claim 9, including using electron-beam evaporation to form catalyst particles on said few-layer graphene film. withdrawn
The method of claim 9, further including cleaning a substrate and applying few-layer graphene to said cleaned substrate. withdrawn
The method of claim 9 including growing said carbon nanotubes in two stages: a first stage of said two stages including growing said carbon nanotubes at a first temperature of between about 850 " C to about 950 " C using a first rate of vapor feedstock (R 1) amount of solid carbon feedstock so as to promote growth in a first orientation along a surface of said few-layer graphene film; and a second stage of said two stages including growing said carbon nanotubes at a second, higher temperature of between about 900 " C to about 1,100 " C using a second rate of feedstock (R 2), so as to promote growth in a second orientation substantially perpendicular to said surface of said few-layer graphene film. withdrawn
The method of claim 9, including removing said crystallographically al igned carbon nanotubes from said few-layer graphene film while maintaining said crystallographic alignment of said carbon nanotubes. withdrawn
The method of claim 9 including using thermal vapor deposition with graphene carbon feedstock layers to grow said carbon nanotubes on remaining few-layer graphene film. withdrawn
The method of claim 9 including using metal containing salt solution to form catalyst particles on said few-layer graphene film. 5 withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
thermal and electrical conducting apparatus
Materials described outside the worked examples.
few-layer graphene film
carbon nanotubes
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 10–120 minutes | — |
Duration | 1–120 minutes |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,390,828Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A thermal and electrical conducting apparatus, comprising: a few layer graphene film having a thickness of 6 atomic layers or less; a substrate supporting the few layer graphene film; and a plurality of carbon nanotubes crystallographically al igned with said few-layer graphene film, wherein said plurality of carbon nanotubes further comprises out of plane growth perpendicular to the few layer graphene film.
The apparatus of claim 1 wherein said substrate is made from an insulator.
The apparatus of claim 1 claim 2, wherein said substrate is made from metal.
The apparatus of claim 1 claim 2, wherein said substrate is made from a material selected from a group consisting of SiO 2, A 1 2 O 3, Si 3 N 4, BN, HfSiO 4, ZrSiO 4, Hf O 2, ZrO 2 and mixtures thereof.
The apparatus of claim 1 claim 2, wherein said substrate is made from a material selected from a group consisting of Ni, Cu, Pt, Au, Co, Fe and mixtures thereof.
The apparatus of claim 1, wherein said few-layer graphene film has a thickness D, where D SVG 13632187.02-02-2016.IK₈G₀CHCPXXIFW2.CLM.1.22.540.2513.561.2542.svg 0.097 0.07 Chemistry Black and white 1. O nm.
The apparatus of claim 1, wherein said carbon nanotubes demonstrate three distinct histogram peaks at angles of -60", about 0" and about +60 0 in relation to any of the peaks. 2 App l n. No. 13/632,187 Response dated Reply to final Office Action
canceled
A method of growing carbon nanotubes on a few-layer graphene film, comprising; applying catalyst particles to a few-layer graphene film having a thickness D, where D < 1.5nm; and growing carbon nanotubes on said few-layer graphene film in crystallographic alignment with said few-layer graphene film so that said carbon nanotubes demonstrate three distinct histogram peaks at angles of about -60", about 0 0 and about SVG 13632187.02-02-2016.IK₈G₀CHCPXXIFW2.CLM.2.10.1534.977.1622.1010.svg 0.11 0.293 Chemistry Black and white. withdrawn
The method of claim 9 including using chemical vapor deposition without a carbon feedstock gas to grow said carbon nanotubes. withdrawn
The method of claim 9, including using electron-beam evaporation to form catalyst particles on said few-layer graphene film. withdrawn
The method of claim 9, further including cleaning a substrate and applying few-layer graphene to said cleaned substrate. withdrawn
The method of claim 9 including growing said carbon nanotubes in two stages: a first stage of said two stages including growing said carbon nanotubes at a first temperature of between about 850 " C to about 950 " C using a first rate of vapor feedstock (R 1) amount of solid carbon feedstock so as to promote growth in a first orientation along a surface of said few-layer graphene film; and a second stage of said two stages including growing said carbon nanotubes at a second, higher temperature of between about 900 " C to about 1,100 " C using a second rate of feedstock (R 2), so as to promote growth in a second orientation substantially perpendicular to said surface of said few-layer graphene film. withdrawn
The method of claim 9, including removing said crystallographically al igned carbon nanotubes from said few-layer graphene film while maintaining said crystallographic alignment of said carbon nanotubes. withdrawn
The method of claim 9 including using thermal vapor deposition with graphene carbon feedstock layers to grow said carbon nanotubes on remaining few-layer graphene film. withdrawn
The method of claim 9 including using metal containing salt solution to form catalyst particles on said few-layer graphene film. 5 withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
thermal and electrical conducting apparatus
Materials described outside the worked examples.
few-layer graphene film
carbon nanotubes
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 10–120 minutes | — |
Duration | 1–120 minutes |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,390,828Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A thermal and electrical conducting apparatus, comprising: a few layer graphene film having a thickness of 6 atomic layers or less; a substrate supporting the few layer graphene film; and a plurality of carbon nanotubes crystallographically al igned with said few-layer graphene film, wherein said plurality of carbon nanotubes further comprises out of plane growth perpendicular to the few layer graphene film.
The apparatus of claim 1 wherein said substrate is made from an insulator.
The apparatus of claim 1 claim 2, wherein said substrate is made from metal.
The apparatus of claim 1 claim 2, wherein said substrate is made from a material selected from a group consisting of SiO 2, A 1 2 O 3, Si 3 N 4, BN, HfSiO 4, ZrSiO 4, Hf O 2, ZrO 2 and mixtures thereof.
The apparatus of claim 1 claim 2, wherein said substrate is made from a material selected from a group consisting of Ni, Cu, Pt, Au, Co, Fe and mixtures thereof.
The apparatus of claim 1, wherein said few-layer graphene film has a thickness D, where D SVG 13632187.02-02-2016.IK₈G₀CHCPXXIFW2.CLM.1.22.540.2513.561.2542.svg 0.097 0.07 Chemistry Black and white 1. O nm.
The apparatus of claim 1, wherein said carbon nanotubes demonstrate three distinct histogram peaks at angles of -60", about 0" and about +60 0 in relation to any of the peaks. 2 App l n. No. 13/632,187 Response dated Reply to final Office Action
canceled
A method of growing carbon nanotubes on a few-layer graphene film, comprising; applying catalyst particles to a few-layer graphene film having a thickness D, where D < 1.5nm; and growing carbon nanotubes on said few-layer graphene film in crystallographic alignment with said few-layer graphene film so that said carbon nanotubes demonstrate three distinct histogram peaks at angles of about -60", about 0 0 and about SVG 13632187.02-02-2016.IK₈G₀CHCPXXIFW2.CLM.2.10.1534.977.1622.1010.svg 0.11 0.293 Chemistry Black and white. withdrawn
The method of claim 9 including using chemical vapor deposition without a carbon feedstock gas to grow said carbon nanotubes. withdrawn
The method of claim 9, including using electron-beam evaporation to form catalyst particles on said few-layer graphene film. withdrawn
The method of claim 9, further including cleaning a substrate and applying few-layer graphene to said cleaned substrate. withdrawn
The method of claim 9 including growing said carbon nanotubes in two stages: a first stage of said two stages including growing said carbon nanotubes at a first temperature of between about 850 " C to about 950 " C using a first rate of vapor feedstock (R 1) amount of solid carbon feedstock so as to promote growth in a first orientation along a surface of said few-layer graphene film; and a second stage of said two stages including growing said carbon nanotubes at a second, higher temperature of between about 900 " C to about 1,100 " C using a second rate of feedstock (R 2), so as to promote growth in a second orientation substantially perpendicular to said surface of said few-layer graphene film. withdrawn
The method of claim 9, including removing said crystallographically al igned carbon nanotubes from said few-layer graphene film while maintaining said crystallographic alignment of said carbon nanotubes. withdrawn
The method of claim 9 including using thermal vapor deposition with graphene carbon feedstock layers to grow said carbon nanotubes on remaining few-layer graphene film. withdrawn
The method of claim 9 including using metal containing salt solution to form catalyst particles on said few-layer graphene film. 5 withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
thermal and electrical conducting apparatus
Materials described outside the worked examples.
few-layer graphene film
carbon nanotubes
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 10–120 minutes | — |
Duration | 1–120 minutes |
Related documents with shared materials, methods, properties, or citations.
insulating substrate materials
metallic substrate materials
highly-ordered pyrolytic graphite
SiC substrate
SiC
SiO₂
Al₂O₃
Si₃N₄
boron nitride
BN
HfSiO₄
ZrSiO₄
HfO₂
ZrO₂
| — |
Temperature | 850–950 °C | — |
Temperature | 900–1100 °C | — |
Thickness | 4–10 nm | — |
Thickness | ≤ 1.5 nm | — |
Thickness | ≤ 10 nm | — |
Duration | 30–60 minutes | — |
Thickness | ≤ 1 nm | — |
insulating substrate materials
metallic substrate materials
highly-ordered pyrolytic graphite
SiC substrate
SiC
SiO₂
Al₂O₃
Si₃N₄
boron nitride
BN
HfSiO₄
ZrSiO₄
HfO₂
ZrO₂
| — |
Temperature | 850–950 °C | — |
Temperature | 900–1100 °C | — |
Thickness | 4–10 nm | — |
Thickness | ≤ 1.5 nm | — |
Thickness | ≤ 10 nm | — |
Duration | 30–60 minutes | — |
Thickness | ≤ 1 nm | — |
insulating substrate materials
metallic substrate materials
highly-ordered pyrolytic graphite
SiC substrate
SiC
SiO₂
Al₂O₃
Si₃N₄
boron nitride
BN
HfSiO₄
ZrSiO₄
HfO₂
ZrO₂
| — |
Temperature | 850–950 °C | — |
Temperature | 900–1100 °C | — |
Thickness | 4–10 nm | — |
Thickness | ≤ 1.5 nm | — |
Thickness | ≤ 10 nm | — |
Duration | 30–60 minutes | — |
Thickness | ≤ 1 nm | — |
insulating substrate materials
metallic substrate materials
highly-ordered pyrolytic graphite
SiC substrate
SiC
SiO₂
Al₂O₃
Si₃N₄
boron nitride
BN
HfSiO₄
ZrSiO₄
HfO₂
ZrO₂
| — |
Temperature | 850–950 °C | — |
Temperature | 900–1100 °C | — |
Thickness | 4–10 nm | — |
Thickness | ≤ 1.5 nm | — |
Thickness | ≤ 10 nm | — |
Duration | 30–60 minutes | — |
Thickness | ≤ 1 nm | — |