Patent
US 9,059,265Graphene Resonant Tunneling Transistor
L. Daniel Gunlycke, Carter T. White
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 9,059,265Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B depict in g aspects of a prior art resonant tunne ling transistor. [021]
FIG. 2 is a scan ni ng tunne h ng microscopy image depict in g a 5-5-8 h ne defect m graphene that may be uti li zed m some embodiments of the present in …
FIGS. 3A-3D illustrate aspects of chemically decorated h ne defects m a graphene sheet used to form a graphene resonant tunne h ng transistor m accordance with …
FIG. 4A) and a h ne defect decorated with hydrogen m accordance with some embodiments of the present in vention (
FIG. 5 illustrates aspects of a graphene sheet hav in g a double-decorated h ne defect structure m accordance some embodiments of with the present in vention. …
FIGS. 6A-6D are plots illustrat in g aspects of transmission probabi h ty m a graphene sheet hav in g a pair of h ne defects m accordance with some embodiments …
FIGS. 7A and 7B are plots illustrat in g aspects of a transport gap (
FIG. 8 is a block diagram illustrat in g aspects of graphene resonant tunne li ng transistor m accordance with some embodiments of the present in vention. [028]
FIG. 9 illustrates aspects of an exemplary embodiment of a graphene resonant tunne ling transistor m accordance with some embodiments of the present in vention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rre ntly Amended) A resonant tunneling t m-grapyhene device comprising: a g raphe graphene sheet comprising a central ribbon section and first and second lateral sections, each of the first and second lateral sections being separated from the central ribbon section by a respective one of a pair of parallel highly reflective transport ba rri ers; wherein the transport ba rri ers are configured to cause a first plurality of ca rr iers from a carr ier source to be reflected laterally at the central ribbon section back to the ca rr ier source and to cause a second plurality of carriers from the ca rr ier source to be transmitted laterally through the central ribbon section by means of resonant tunneling; and further wherein the transport ba rri ers are configured to produce a transport gap across the central ribbon section that controls a size of the first and second pluralities of carriers, a magnitude of the transport gap being tuned by varying a distance between the transport ba rri ers; wherein the distance between the transport barriers is less than 50 nm.
The resonant tunneling graphene device according to claim 1, wherein the transport barri ers comprise a pair of parallel line defects formed in the graphene sheet.
The resonant tunneling graphene device according to claim 1, wherein the transport barri ers comprise a pair of parallel chemically decorated 5-5-8 l ine defects formed in the graphene sheet. Page 2 of 6 U.S. Application No. 14/098,589 Amendment Under 37 C.F.R. ± § 1. 31 2
The resonant tunneling graphene device according to claim 1, wherein the transport ba rri ers comprise areas of large local potentials applied directly to the graphene sheet.
canceled
(Cu rr ently Amended) A resonant tunneling transistor, comprising: a resonant tunneling g -apj heme-grahene device, a source, a gate, a drain; the graphene device comprising a graphene sheet comprising a central ribbon section, a first lateral section contacted to the source and a second lateral section contacted to the drain, each of the first and second lateral sections being separated from the central ribbon section by a respective one of a pair of parallel highly reflective transport barriers; wherein the transport barriers are configured to cause a first plurality of ca rr iers from the source to be reflected laterally at the central ribbon section back to the source and to cause a second plurality of electrons from the source to be transmitted through the central ribbon section to the drain by means of resonant tunneling, the transport of the first and second pluralities of carriers being controlled by the gate; and Page 3 of 6 U.S. Application No. 14/098,589 Amendment Under 37 C.F.R. ± § 1. 31 2 further wherein the transport ba rr iers are configured to produce a transport gap across the central ribbon section that controls a size of the first and second pluralities of carriers, a magnitude of the transport gap being tuned by varying a distance between the transport ba rr iers wherein the distance between the transport barriers is less than 50 nm.
The resonant tunneling transistor according to claim 8, wherein the transport ba rr iers comprise a pair of parallel line defects formed in the graphene sheet.
The resonant tunneling transistor according to claim 8, wherein the transport barriers comprise a pair of parallel chemically decorated 5-5-8 line defects formed in the graphene sheet.
The resonant tunneling transistor according to claim 8, wherein the transport ba rr iers comprise areas of large local potentials applied directly to the graphene sheet. Page 4 of 6 U.S. Application No. 14/098,589 Amendment Under 37 C.F.R. ± § 1. 31 2 previously presented
. canceled
. canceled
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
resonant tunneling graphene device
resonant tunneling transistor
Materials described outside the worked examples.
graphene
C
chemically decorated 5-5-8 line defects in graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B depict in g aspects of a prior art resonant tunne ling transistor. [021]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | ≤ 0.015 eV | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,059,265Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B depict in g aspects of a prior art resonant tunne ling transistor. [021]
FIG. 2 is a scan ni ng tunne h ng microscopy image depict in g a 5-5-8 h ne defect m graphene that may be uti li zed m some embodiments of the present in …
FIGS. 3A-3D illustrate aspects of chemically decorated h ne defects m a graphene sheet used to form a graphene resonant tunne h ng transistor m accordance with …
FIG. 4A) and a h ne defect decorated with hydrogen m accordance with some embodiments of the present in vention (
FIG. 5 illustrates aspects of a graphene sheet hav in g a double-decorated h ne defect structure m accordance some embodiments of with the present in vention. …
FIGS. 6A-6D are plots illustrat in g aspects of transmission probabi h ty m a graphene sheet hav in g a pair of h ne defects m accordance with some embodiments …
FIGS. 7A and 7B are plots illustrat in g aspects of a transport gap (
FIG. 8 is a block diagram illustrat in g aspects of graphene resonant tunne li ng transistor m accordance with some embodiments of the present in vention. [028]
FIG. 9 illustrates aspects of an exemplary embodiment of a graphene resonant tunne ling transistor m accordance with some embodiments of the present in vention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rre ntly Amended) A resonant tunneling t m-grapyhene device comprising: a g raphe graphene sheet comprising a central ribbon section and first and second lateral sections, each of the first and second lateral sections being separated from the central ribbon section by a respective one of a pair of parallel highly reflective transport ba rri ers; wherein the transport ba rri ers are configured to cause a first plurality of ca rr iers from a carr ier source to be reflected laterally at the central ribbon section back to the ca rr ier source and to cause a second plurality of carriers from the ca rr ier source to be transmitted laterally through the central ribbon section by means of resonant tunneling; and further wherein the transport ba rri ers are configured to produce a transport gap across the central ribbon section that controls a size of the first and second pluralities of carriers, a magnitude of the transport gap being tuned by varying a distance between the transport ba rri ers; wherein the distance between the transport barriers is less than 50 nm.
The resonant tunneling graphene device according to claim 1, wherein the transport barri ers comprise a pair of parallel line defects formed in the graphene sheet.
The resonant tunneling graphene device according to claim 1, wherein the transport barri ers comprise a pair of parallel chemically decorated 5-5-8 l ine defects formed in the graphene sheet. Page 2 of 6 U.S. Application No. 14/098,589 Amendment Under 37 C.F.R. ± § 1. 31 2
The resonant tunneling graphene device according to claim 1, wherein the transport ba rri ers comprise areas of large local potentials applied directly to the graphene sheet.
canceled
(Cu rr ently Amended) A resonant tunneling transistor, comprising: a resonant tunneling g -apj heme-grahene device, a source, a gate, a drain; the graphene device comprising a graphene sheet comprising a central ribbon section, a first lateral section contacted to the source and a second lateral section contacted to the drain, each of the first and second lateral sections being separated from the central ribbon section by a respective one of a pair of parallel highly reflective transport barriers; wherein the transport barriers are configured to cause a first plurality of ca rr iers from the source to be reflected laterally at the central ribbon section back to the source and to cause a second plurality of electrons from the source to be transmitted through the central ribbon section to the drain by means of resonant tunneling, the transport of the first and second pluralities of carriers being controlled by the gate; and Page 3 of 6 U.S. Application No. 14/098,589 Amendment Under 37 C.F.R. ± § 1. 31 2 further wherein the transport ba rr iers are configured to produce a transport gap across the central ribbon section that controls a size of the first and second pluralities of carriers, a magnitude of the transport gap being tuned by varying a distance between the transport ba rr iers wherein the distance between the transport barriers is less than 50 nm.
The resonant tunneling transistor according to claim 8, wherein the transport ba rr iers comprise a pair of parallel line defects formed in the graphene sheet.
The resonant tunneling transistor according to claim 8, wherein the transport barriers comprise a pair of parallel chemically decorated 5-5-8 line defects formed in the graphene sheet.
The resonant tunneling transistor according to claim 8, wherein the transport ba rr iers comprise areas of large local potentials applied directly to the graphene sheet. Page 4 of 6 U.S. Application No. 14/098,589 Amendment Under 37 C.F.R. ± § 1. 31 2 previously presented
. canceled
. canceled
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
resonant tunneling graphene device
resonant tunneling transistor
Materials described outside the worked examples.
graphene
C
chemically decorated 5-5-8 line defects in graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B depict in g aspects of a prior art resonant tunne ling transistor. [021]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | ≤ 0.015 eV | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,059,265Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B depict in g aspects of a prior art resonant tunne ling transistor. [021]
FIG. 2 is a scan ni ng tunne h ng microscopy image depict in g a 5-5-8 h ne defect m graphene that may be uti li zed m some embodiments of the present in …
FIGS. 3A-3D illustrate aspects of chemically decorated h ne defects m a graphene sheet used to form a graphene resonant tunne h ng transistor m accordance with …
FIG. 4A) and a h ne defect decorated with hydrogen m accordance with some embodiments of the present in vention (
FIG. 5 illustrates aspects of a graphene sheet hav in g a double-decorated h ne defect structure m accordance some embodiments of with the present in vention. …
FIGS. 6A-6D are plots illustrat in g aspects of transmission probabi h ty m a graphene sheet hav in g a pair of h ne defects m accordance with some embodiments …
FIGS. 7A and 7B are plots illustrat in g aspects of a transport gap (
FIG. 8 is a block diagram illustrat in g aspects of graphene resonant tunne li ng transistor m accordance with some embodiments of the present in vention. [028]
FIG. 9 illustrates aspects of an exemplary embodiment of a graphene resonant tunne ling transistor m accordance with some embodiments of the present in vention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rre ntly Amended) A resonant tunneling t m-grapyhene device comprising: a g raphe graphene sheet comprising a central ribbon section and first and second lateral sections, each of the first and second lateral sections being separated from the central ribbon section by a respective one of a pair of parallel highly reflective transport ba rri ers; wherein the transport ba rri ers are configured to cause a first plurality of ca rr iers from a carr ier source to be reflected laterally at the central ribbon section back to the ca rr ier source and to cause a second plurality of carriers from the ca rr ier source to be transmitted laterally through the central ribbon section by means of resonant tunneling; and further wherein the transport ba rri ers are configured to produce a transport gap across the central ribbon section that controls a size of the first and second pluralities of carriers, a magnitude of the transport gap being tuned by varying a distance between the transport ba rri ers; wherein the distance between the transport barriers is less than 50 nm.
The resonant tunneling graphene device according to claim 1, wherein the transport barri ers comprise a pair of parallel line defects formed in the graphene sheet.
The resonant tunneling graphene device according to claim 1, wherein the transport barri ers comprise a pair of parallel chemically decorated 5-5-8 l ine defects formed in the graphene sheet. Page 2 of 6 U.S. Application No. 14/098,589 Amendment Under 37 C.F.R. ± § 1. 31 2
The resonant tunneling graphene device according to claim 1, wherein the transport ba rri ers comprise areas of large local potentials applied directly to the graphene sheet.
canceled
(Cu rr ently Amended) A resonant tunneling transistor, comprising: a resonant tunneling g -apj heme-grahene device, a source, a gate, a drain; the graphene device comprising a graphene sheet comprising a central ribbon section, a first lateral section contacted to the source and a second lateral section contacted to the drain, each of the first and second lateral sections being separated from the central ribbon section by a respective one of a pair of parallel highly reflective transport barriers; wherein the transport barriers are configured to cause a first plurality of ca rr iers from the source to be reflected laterally at the central ribbon section back to the source and to cause a second plurality of electrons from the source to be transmitted through the central ribbon section to the drain by means of resonant tunneling, the transport of the first and second pluralities of carriers being controlled by the gate; and Page 3 of 6 U.S. Application No. 14/098,589 Amendment Under 37 C.F.R. ± § 1. 31 2 further wherein the transport ba rr iers are configured to produce a transport gap across the central ribbon section that controls a size of the first and second pluralities of carriers, a magnitude of the transport gap being tuned by varying a distance between the transport ba rr iers wherein the distance between the transport barriers is less than 50 nm.
The resonant tunneling transistor according to claim 8, wherein the transport ba rr iers comprise a pair of parallel line defects formed in the graphene sheet.
The resonant tunneling transistor according to claim 8, wherein the transport barriers comprise a pair of parallel chemically decorated 5-5-8 line defects formed in the graphene sheet.
The resonant tunneling transistor according to claim 8, wherein the transport ba rr iers comprise areas of large local potentials applied directly to the graphene sheet. Page 4 of 6 U.S. Application No. 14/098,589 Amendment Under 37 C.F.R. ± § 1. 31 2 previously presented
. canceled
. canceled
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
resonant tunneling graphene device
resonant tunneling transistor
Materials described outside the worked examples.
graphene
C
chemically decorated 5-5-8 line defects in graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B depict in g aspects of a prior art resonant tunne ling transistor. [021]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | ≤ 0.015 eV | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,059,265Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B depict in g aspects of a prior art resonant tunne ling transistor. [021]
FIG. 2 is a scan ni ng tunne h ng microscopy image depict in g a 5-5-8 h ne defect m graphene that may be uti li zed m some embodiments of the present in …
FIGS. 3A-3D illustrate aspects of chemically decorated h ne defects m a graphene sheet used to form a graphene resonant tunne h ng transistor m accordance with …
FIG. 4A) and a h ne defect decorated with hydrogen m accordance with some embodiments of the present in vention (
FIG. 5 illustrates aspects of a graphene sheet hav in g a double-decorated h ne defect structure m accordance some embodiments of with the present in vention. …
FIGS. 6A-6D are plots illustrat in g aspects of transmission probabi h ty m a graphene sheet hav in g a pair of h ne defects m accordance with some embodiments …
FIGS. 7A and 7B are plots illustrat in g aspects of a transport gap (
FIG. 8 is a block diagram illustrat in g aspects of graphene resonant tunne li ng transistor m accordance with some embodiments of the present in vention. [028]
FIG. 9 illustrates aspects of an exemplary embodiment of a graphene resonant tunne ling transistor m accordance with some embodiments of the present in vention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rre ntly Amended) A resonant tunneling t m-grapyhene device comprising: a g raphe graphene sheet comprising a central ribbon section and first and second lateral sections, each of the first and second lateral sections being separated from the central ribbon section by a respective one of a pair of parallel highly reflective transport ba rri ers; wherein the transport ba rri ers are configured to cause a first plurality of ca rr iers from a carr ier source to be reflected laterally at the central ribbon section back to the ca rr ier source and to cause a second plurality of carriers from the ca rr ier source to be transmitted laterally through the central ribbon section by means of resonant tunneling; and further wherein the transport ba rri ers are configured to produce a transport gap across the central ribbon section that controls a size of the first and second pluralities of carriers, a magnitude of the transport gap being tuned by varying a distance between the transport ba rri ers; wherein the distance between the transport barriers is less than 50 nm.
The resonant tunneling graphene device according to claim 1, wherein the transport barri ers comprise a pair of parallel line defects formed in the graphene sheet.
The resonant tunneling graphene device according to claim 1, wherein the transport barri ers comprise a pair of parallel chemically decorated 5-5-8 l ine defects formed in the graphene sheet. Page 2 of 6 U.S. Application No. 14/098,589 Amendment Under 37 C.F.R. ± § 1. 31 2
The resonant tunneling graphene device according to claim 1, wherein the transport ba rri ers comprise areas of large local potentials applied directly to the graphene sheet.
canceled
(Cu rr ently Amended) A resonant tunneling transistor, comprising: a resonant tunneling g -apj heme-grahene device, a source, a gate, a drain; the graphene device comprising a graphene sheet comprising a central ribbon section, a first lateral section contacted to the source and a second lateral section contacted to the drain, each of the first and second lateral sections being separated from the central ribbon section by a respective one of a pair of parallel highly reflective transport barriers; wherein the transport barriers are configured to cause a first plurality of ca rr iers from the source to be reflected laterally at the central ribbon section back to the source and to cause a second plurality of electrons from the source to be transmitted through the central ribbon section to the drain by means of resonant tunneling, the transport of the first and second pluralities of carriers being controlled by the gate; and Page 3 of 6 U.S. Application No. 14/098,589 Amendment Under 37 C.F.R. ± § 1. 31 2 further wherein the transport ba rr iers are configured to produce a transport gap across the central ribbon section that controls a size of the first and second pluralities of carriers, a magnitude of the transport gap being tuned by varying a distance between the transport ba rr iers wherein the distance between the transport barriers is less than 50 nm.
The resonant tunneling transistor according to claim 8, wherein the transport ba rr iers comprise a pair of parallel line defects formed in the graphene sheet.
The resonant tunneling transistor according to claim 8, wherein the transport barriers comprise a pair of parallel chemically decorated 5-5-8 line defects formed in the graphene sheet.
The resonant tunneling transistor according to claim 8, wherein the transport ba rr iers comprise areas of large local potentials applied directly to the graphene sheet. Page 4 of 6 U.S. Application No. 14/098,589 Amendment Under 37 C.F.R. ± § 1. 31 2 previously presented
. canceled
. canceled
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
resonant tunneling graphene device
resonant tunneling transistor
Materials described outside the worked examples.
graphene
C
chemically decorated 5-5-8 line defects in graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B depict in g aspects of a prior art resonant tunne ling transistor. [021]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | ≤ 0.015 eV | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
hydrogen
H₂
oxygen
O₂
fluorine
F₂
FIGS. 3A-3D illustrate aspects of chemically decorated h ne defects m a graphene sheet used to form a graphene resonant tunne h ng transistor m accordance with …
FIGS. 7A and 7B are plots illustrat in g aspects of a transport gap (
FIG. 8 is a block diagram illustrat in g aspects of graphene resonant tunne li ng transistor m accordance with some embodiments of the present in vention. [028]
FIG. 9 illustrates aspects of an exemplary embodiment of a graphene resonant tunne ling transistor m accordance with some embodiments of the present in vention.
| — |
hydrogen
H₂
oxygen
O₂
fluorine
F₂
FIGS. 3A-3D illustrate aspects of chemically decorated h ne defects m a graphene sheet used to form a graphene resonant tunne h ng transistor m accordance with …
FIGS. 7A and 7B are plots illustrat in g aspects of a transport gap (
FIG. 8 is a block diagram illustrat in g aspects of graphene resonant tunne li ng transistor m accordance with some embodiments of the present in vention. [028]
FIG. 9 illustrates aspects of an exemplary embodiment of a graphene resonant tunne ling transistor m accordance with some embodiments of the present in vention.
| — |
hydrogen
H₂
oxygen
O₂
fluorine
F₂
FIGS. 3A-3D illustrate aspects of chemically decorated h ne defects m a graphene sheet used to form a graphene resonant tunne h ng transistor m accordance with …
FIGS. 7A and 7B are plots illustrat in g aspects of a transport gap (
FIG. 8 is a block diagram illustrat in g aspects of graphene resonant tunne li ng transistor m accordance with some embodiments of the present in vention. [028]
FIG. 9 illustrates aspects of an exemplary embodiment of a graphene resonant tunne ling transistor m accordance with some embodiments of the present in vention.
| — |
hydrogen
H₂
oxygen
O₂
fluorine
F₂
FIGS. 3A-3D illustrate aspects of chemically decorated h ne defects m a graphene sheet used to form a graphene resonant tunne h ng transistor m accordance with …
FIGS. 7A and 7B are plots illustrat in g aspects of a transport gap (
FIG. 8 is a block diagram illustrat in g aspects of graphene resonant tunne li ng transistor m accordance with some embodiments of the present in vention. [028]
FIG. 9 illustrates aspects of an exemplary embodiment of a graphene resonant tunne ling transistor m accordance with some embodiments of the present in vention.
| — |