Patent
US 10,181,521GRAPHENE HETEROLAYERS FOR ELECTRONIC APPLICATIONS
Archana Venugopal
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,181,521Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer. [0006]
FIG. 2C are cross sections of a microelectronic device depicting successive stages of an example method of forming an electrical conductor containing a …
FIG. 3 B are cross sections of another example microelectronic device containing an electrical conductor including a graphene heterolayer. [0008]
FIG. 4 B are cross sections of a microelectronic device depicting successive stages of another example method of forming an electrical conductor containing a …
FIG. 5 is a perspective view of Be rn al bilayer graphene. [0010]
FIG. 6 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer in a thin film transistor. …
FIG. 7 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer as an antenna for a bandgap …
FIG. 8 B are cross sections of an example microelectronic device containing a plurality of electrical conductors, each including a graphene heterolayer, …
FIG. 9 B are cross sections of an example microelectronic device containing a plurality of electrical conductors, each including a graphene heterolayer, to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A microelectronic device, comprising: a substrate; and an electrical conductor disposed over the substrate, the electrical conductor comprising a graphene heterolayer, the graphene heterolayer comprising a plurality of alternating layers of graphene and layers of a barrier material, the layers of graphene and the layers of the barrier material being disposed in nanoparticles, wherein each layer of graphene has one to two atomic layers of graphene, and each layer of the barrier material has one to three layers selected from the group consisting of hexagonal boron nitride, cubic boron nitride, and aluminum nitride. Currently amended
The microelectronic device of claim 1, wherein the layers of graphene include Bernal bilayer graphene. Original
The microelectronic device of claim 1, wherein the layers of graphene and the layers of the barrier material are continuous across the electrical conductor. Original
The microelectronic device of claim 1, wherein the layers of graphene are doped with an element selected from the group consisting of boron, gallium, indium, silicon, germanium, nitrogen, phosphorus, arsenic, antimony, and oxygen. Original
The microelectronic device of claim 1, wherein the layers of graphene are functionalized with chemical reagents selected from the group consisting of halogens, noble metals, hydroxyl groups, and organic molecules. Original
The microelectronic device of claim 1, wherein the electrical conductor provides an interconnect of the microelectronic device. Original
The microelectronic device of claim 1, wherein the electrical conductor provides a gate of a thin film transistor of the microelectronic device. Original
The microelectronic device of claim 1, wherein the electrical conductor provides an antenna connected to a bandgap converter of the microelectronic device. Original
The microelectronic device of claim 1, wherein the electrical conductor provides a plate of a capacitor of the microelectronic device. Original
The microelectronic device of claim 1, wherein the electrical conductor provides a meta-atom of a meta-material structure of the microelectronic device. Original
Canceled
A method of forming a microelectronic device, the method comprising: providing a substrate; forming a layer of a barrier material which is continuous across an area for an electrical conductor of the microelectronic device, the layer of barrier material comprising one to three layers selected from the group consisting of hexagonal boron nitride, cubic boron nitride, and aluminum nitride; forming a layer of graphene which is continuous on the layer of the barrier material, wherein the layer of graphene extends across the area for the electrical conductor, and the layer of graphene includes one to two atomic layers of graphene; and repeating forming a layer of the barrier material which is continuous and forming a layer of graphene which is continuous, to form a graphene heterolayer of the electrical conductor, wherein the graphene heterolayer comprises a plurality of alternating layers of graphene and layers of the barrier material; wherein forming the layer of the barrier material includes an atomic layer deposition (ALD) process, comprising: flowing boron trichloride gas over the substrate; subsequently ceasing flow of the boron trichloride gas over the substrate; flowing ammonia gas over the substrate; and subsequently ceasing flow of the ammonia gas over the substrate. Currently amended
The method of claim 12, wherein forming the layer of graphene includes a plasma enhanced chemical vapor deposition (P EC VD) process, comprising: heating the substrate to a temperature of 200 0 C to 400 °C; flowing a carbon-containing reagent gas over the substrate while the substrate is at 200 0 C to 400 ° C; and applying radio frequency (R F) power to the carbon-containing reagent gas. Original
The method of claim 12, wherein forming the layer of graphene includes a transfer process, comprising: forming the layer of graphene on a secondary substrate, separate from the substrate of the microelectronic device; removing the layer of graphene from the secondary substrate; and applying the layer of graphene to the substrate of the microelectronic device. Original
Canceled
Canceled
A method of forming a microelectronic device, the method comp ri sing: providing a substrate; and forming an electrically conductive nanoparticle film of an electrical conductor of the microelectronic device, the electrically conductive nanoparticle film being essentially free of organic binder material and comprising nanoparticles that contain a graphene heterolayer, the graphene heterolayer comprising a plurality of alternating layers of graphene and layers of a barrier material, wherein each layer of g raphene has one to two atomic layers of graphene, and each layer of the barrier material has one to three layers selected from the group consisting of hexagonal boron nitride, cubic boron nitride, and aluminum nitride;, wherein forming the electrically conductive nanoparticle film includes an additive process, comprising: dispensing a nanoparticle ink containing the nanoparticles and a carrier fluid onto the substrate to form a nanoparticle ink film in an area for the electrical conductor, by an additive process; and heating the nanoparticle ink film to remove at least a portion of a volatile material from the nanoparticle ink film. Currently amended
The method of claim 18, wherein the additive process is selected from the group consisting of a discrete droplet dispense process, a continuous extrusion process, a direct laser transfer process, an electrostatic deposition process, and an electrochemical deposition process. Original
Layer stacks claimed or described, ordered top of device to substrate.
microelectronic device with graphene heterolayer electrical conductor
thin film transistor with graphene heterolayer gate
Materials described outside the worked examples.
graphene
hexagonal boron nitride
h-BN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer. [0006]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 200–400 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,181,521Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer. [0006]
FIG. 2C are cross sections of a microelectronic device depicting successive stages of an example method of forming an electrical conductor containing a …
FIG. 3 B are cross sections of another example microelectronic device containing an electrical conductor including a graphene heterolayer. [0008]
FIG. 4 B are cross sections of a microelectronic device depicting successive stages of another example method of forming an electrical conductor containing a …
FIG. 5 is a perspective view of Be rn al bilayer graphene. [0010]
FIG. 6 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer in a thin film transistor. …
FIG. 7 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer as an antenna for a bandgap …
FIG. 8 B are cross sections of an example microelectronic device containing a plurality of electrical conductors, each including a graphene heterolayer, …
FIG. 9 B are cross sections of an example microelectronic device containing a plurality of electrical conductors, each including a graphene heterolayer, to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A microelectronic device, comprising: a substrate; and an electrical conductor disposed over the substrate, the electrical conductor comprising a graphene heterolayer, the graphene heterolayer comprising a plurality of alternating layers of graphene and layers of a barrier material, the layers of graphene and the layers of the barrier material being disposed in nanoparticles, wherein each layer of graphene has one to two atomic layers of graphene, and each layer of the barrier material has one to three layers selected from the group consisting of hexagonal boron nitride, cubic boron nitride, and aluminum nitride. Currently amended
The microelectronic device of claim 1, wherein the layers of graphene include Bernal bilayer graphene. Original
The microelectronic device of claim 1, wherein the layers of graphene and the layers of the barrier material are continuous across the electrical conductor. Original
The microelectronic device of claim 1, wherein the layers of graphene are doped with an element selected from the group consisting of boron, gallium, indium, silicon, germanium, nitrogen, phosphorus, arsenic, antimony, and oxygen. Original
The microelectronic device of claim 1, wherein the layers of graphene are functionalized with chemical reagents selected from the group consisting of halogens, noble metals, hydroxyl groups, and organic molecules. Original
The microelectronic device of claim 1, wherein the electrical conductor provides an interconnect of the microelectronic device. Original
The microelectronic device of claim 1, wherein the electrical conductor provides a gate of a thin film transistor of the microelectronic device. Original
The microelectronic device of claim 1, wherein the electrical conductor provides an antenna connected to a bandgap converter of the microelectronic device. Original
The microelectronic device of claim 1, wherein the electrical conductor provides a plate of a capacitor of the microelectronic device. Original
The microelectronic device of claim 1, wherein the electrical conductor provides a meta-atom of a meta-material structure of the microelectronic device. Original
Canceled
A method of forming a microelectronic device, the method comprising: providing a substrate; forming a layer of a barrier material which is continuous across an area for an electrical conductor of the microelectronic device, the layer of barrier material comprising one to three layers selected from the group consisting of hexagonal boron nitride, cubic boron nitride, and aluminum nitride; forming a layer of graphene which is continuous on the layer of the barrier material, wherein the layer of graphene extends across the area for the electrical conductor, and the layer of graphene includes one to two atomic layers of graphene; and repeating forming a layer of the barrier material which is continuous and forming a layer of graphene which is continuous, to form a graphene heterolayer of the electrical conductor, wherein the graphene heterolayer comprises a plurality of alternating layers of graphene and layers of the barrier material; wherein forming the layer of the barrier material includes an atomic layer deposition (ALD) process, comprising: flowing boron trichloride gas over the substrate; subsequently ceasing flow of the boron trichloride gas over the substrate; flowing ammonia gas over the substrate; and subsequently ceasing flow of the ammonia gas over the substrate. Currently amended
The method of claim 12, wherein forming the layer of graphene includes a plasma enhanced chemical vapor deposition (P EC VD) process, comprising: heating the substrate to a temperature of 200 0 C to 400 °C; flowing a carbon-containing reagent gas over the substrate while the substrate is at 200 0 C to 400 ° C; and applying radio frequency (R F) power to the carbon-containing reagent gas. Original
The method of claim 12, wherein forming the layer of graphene includes a transfer process, comprising: forming the layer of graphene on a secondary substrate, separate from the substrate of the microelectronic device; removing the layer of graphene from the secondary substrate; and applying the layer of graphene to the substrate of the microelectronic device. Original
Canceled
Canceled
A method of forming a microelectronic device, the method comp ri sing: providing a substrate; and forming an electrically conductive nanoparticle film of an electrical conductor of the microelectronic device, the electrically conductive nanoparticle film being essentially free of organic binder material and comprising nanoparticles that contain a graphene heterolayer, the graphene heterolayer comprising a plurality of alternating layers of graphene and layers of a barrier material, wherein each layer of g raphene has one to two atomic layers of graphene, and each layer of the barrier material has one to three layers selected from the group consisting of hexagonal boron nitride, cubic boron nitride, and aluminum nitride;, wherein forming the electrically conductive nanoparticle film includes an additive process, comprising: dispensing a nanoparticle ink containing the nanoparticles and a carrier fluid onto the substrate to form a nanoparticle ink film in an area for the electrical conductor, by an additive process; and heating the nanoparticle ink film to remove at least a portion of a volatile material from the nanoparticle ink film. Currently amended
The method of claim 18, wherein the additive process is selected from the group consisting of a discrete droplet dispense process, a continuous extrusion process, a direct laser transfer process, an electrostatic deposition process, and an electrochemical deposition process. Original
Layer stacks claimed or described, ordered top of device to substrate.
microelectronic device with graphene heterolayer electrical conductor
thin film transistor with graphene heterolayer gate
Materials described outside the worked examples.
graphene
hexagonal boron nitride
h-BN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer. [0006]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 200–400 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,181,521Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer. [0006]
FIG. 2C are cross sections of a microelectronic device depicting successive stages of an example method of forming an electrical conductor containing a …
FIG. 3 B are cross sections of another example microelectronic device containing an electrical conductor including a graphene heterolayer. [0008]
FIG. 4 B are cross sections of a microelectronic device depicting successive stages of another example method of forming an electrical conductor containing a …
FIG. 5 is a perspective view of Be rn al bilayer graphene. [0010]
FIG. 6 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer in a thin film transistor. …
FIG. 7 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer as an antenna for a bandgap …
FIG. 8 B are cross sections of an example microelectronic device containing a plurality of electrical conductors, each including a graphene heterolayer, …
FIG. 9 B are cross sections of an example microelectronic device containing a plurality of electrical conductors, each including a graphene heterolayer, to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A microelectronic device, comprising: a substrate; and an electrical conductor disposed over the substrate, the electrical conductor comprising a graphene heterolayer, the graphene heterolayer comprising a plurality of alternating layers of graphene and layers of a barrier material, the layers of graphene and the layers of the barrier material being disposed in nanoparticles, wherein each layer of graphene has one to two atomic layers of graphene, and each layer of the barrier material has one to three layers selected from the group consisting of hexagonal boron nitride, cubic boron nitride, and aluminum nitride. Currently amended
The microelectronic device of claim 1, wherein the layers of graphene include Bernal bilayer graphene. Original
The microelectronic device of claim 1, wherein the layers of graphene and the layers of the barrier material are continuous across the electrical conductor. Original
The microelectronic device of claim 1, wherein the layers of graphene are doped with an element selected from the group consisting of boron, gallium, indium, silicon, germanium, nitrogen, phosphorus, arsenic, antimony, and oxygen. Original
The microelectronic device of claim 1, wherein the layers of graphene are functionalized with chemical reagents selected from the group consisting of halogens, noble metals, hydroxyl groups, and organic molecules. Original
The microelectronic device of claim 1, wherein the electrical conductor provides an interconnect of the microelectronic device. Original
The microelectronic device of claim 1, wherein the electrical conductor provides a gate of a thin film transistor of the microelectronic device. Original
The microelectronic device of claim 1, wherein the electrical conductor provides an antenna connected to a bandgap converter of the microelectronic device. Original
The microelectronic device of claim 1, wherein the electrical conductor provides a plate of a capacitor of the microelectronic device. Original
The microelectronic device of claim 1, wherein the electrical conductor provides a meta-atom of a meta-material structure of the microelectronic device. Original
Canceled
A method of forming a microelectronic device, the method comprising: providing a substrate; forming a layer of a barrier material which is continuous across an area for an electrical conductor of the microelectronic device, the layer of barrier material comprising one to three layers selected from the group consisting of hexagonal boron nitride, cubic boron nitride, and aluminum nitride; forming a layer of graphene which is continuous on the layer of the barrier material, wherein the layer of graphene extends across the area for the electrical conductor, and the layer of graphene includes one to two atomic layers of graphene; and repeating forming a layer of the barrier material which is continuous and forming a layer of graphene which is continuous, to form a graphene heterolayer of the electrical conductor, wherein the graphene heterolayer comprises a plurality of alternating layers of graphene and layers of the barrier material; wherein forming the layer of the barrier material includes an atomic layer deposition (ALD) process, comprising: flowing boron trichloride gas over the substrate; subsequently ceasing flow of the boron trichloride gas over the substrate; flowing ammonia gas over the substrate; and subsequently ceasing flow of the ammonia gas over the substrate. Currently amended
The method of claim 12, wherein forming the layer of graphene includes a plasma enhanced chemical vapor deposition (P EC VD) process, comprising: heating the substrate to a temperature of 200 0 C to 400 °C; flowing a carbon-containing reagent gas over the substrate while the substrate is at 200 0 C to 400 ° C; and applying radio frequency (R F) power to the carbon-containing reagent gas. Original
The method of claim 12, wherein forming the layer of graphene includes a transfer process, comprising: forming the layer of graphene on a secondary substrate, separate from the substrate of the microelectronic device; removing the layer of graphene from the secondary substrate; and applying the layer of graphene to the substrate of the microelectronic device. Original
Canceled
Canceled
A method of forming a microelectronic device, the method comp ri sing: providing a substrate; and forming an electrically conductive nanoparticle film of an electrical conductor of the microelectronic device, the electrically conductive nanoparticle film being essentially free of organic binder material and comprising nanoparticles that contain a graphene heterolayer, the graphene heterolayer comprising a plurality of alternating layers of graphene and layers of a barrier material, wherein each layer of g raphene has one to two atomic layers of graphene, and each layer of the barrier material has one to three layers selected from the group consisting of hexagonal boron nitride, cubic boron nitride, and aluminum nitride;, wherein forming the electrically conductive nanoparticle film includes an additive process, comprising: dispensing a nanoparticle ink containing the nanoparticles and a carrier fluid onto the substrate to form a nanoparticle ink film in an area for the electrical conductor, by an additive process; and heating the nanoparticle ink film to remove at least a portion of a volatile material from the nanoparticle ink film. Currently amended
The method of claim 18, wherein the additive process is selected from the group consisting of a discrete droplet dispense process, a continuous extrusion process, a direct laser transfer process, an electrostatic deposition process, and an electrochemical deposition process. Original
Layer stacks claimed or described, ordered top of device to substrate.
microelectronic device with graphene heterolayer electrical conductor
thin film transistor with graphene heterolayer gate
Materials described outside the worked examples.
graphene
hexagonal boron nitride
h-BN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer. [0006]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 200–400 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,181,521Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer. [0006]
FIG. 2C are cross sections of a microelectronic device depicting successive stages of an example method of forming an electrical conductor containing a …
FIG. 3 B are cross sections of another example microelectronic device containing an electrical conductor including a graphene heterolayer. [0008]
FIG. 4 B are cross sections of a microelectronic device depicting successive stages of another example method of forming an electrical conductor containing a …
FIG. 5 is a perspective view of Be rn al bilayer graphene. [0010]
FIG. 6 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer in a thin film transistor. …
FIG. 7 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer as an antenna for a bandgap …
FIG. 8 B are cross sections of an example microelectronic device containing a plurality of electrical conductors, each including a graphene heterolayer, …
FIG. 9 B are cross sections of an example microelectronic device containing a plurality of electrical conductors, each including a graphene heterolayer, to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A microelectronic device, comprising: a substrate; and an electrical conductor disposed over the substrate, the electrical conductor comprising a graphene heterolayer, the graphene heterolayer comprising a plurality of alternating layers of graphene and layers of a barrier material, the layers of graphene and the layers of the barrier material being disposed in nanoparticles, wherein each layer of graphene has one to two atomic layers of graphene, and each layer of the barrier material has one to three layers selected from the group consisting of hexagonal boron nitride, cubic boron nitride, and aluminum nitride. Currently amended
The microelectronic device of claim 1, wherein the layers of graphene include Bernal bilayer graphene. Original
The microelectronic device of claim 1, wherein the layers of graphene and the layers of the barrier material are continuous across the electrical conductor. Original
The microelectronic device of claim 1, wherein the layers of graphene are doped with an element selected from the group consisting of boron, gallium, indium, silicon, germanium, nitrogen, phosphorus, arsenic, antimony, and oxygen. Original
The microelectronic device of claim 1, wherein the layers of graphene are functionalized with chemical reagents selected from the group consisting of halogens, noble metals, hydroxyl groups, and organic molecules. Original
The microelectronic device of claim 1, wherein the electrical conductor provides an interconnect of the microelectronic device. Original
The microelectronic device of claim 1, wherein the electrical conductor provides a gate of a thin film transistor of the microelectronic device. Original
The microelectronic device of claim 1, wherein the electrical conductor provides an antenna connected to a bandgap converter of the microelectronic device. Original
The microelectronic device of claim 1, wherein the electrical conductor provides a plate of a capacitor of the microelectronic device. Original
The microelectronic device of claim 1, wherein the electrical conductor provides a meta-atom of a meta-material structure of the microelectronic device. Original
Canceled
A method of forming a microelectronic device, the method comprising: providing a substrate; forming a layer of a barrier material which is continuous across an area for an electrical conductor of the microelectronic device, the layer of barrier material comprising one to three layers selected from the group consisting of hexagonal boron nitride, cubic boron nitride, and aluminum nitride; forming a layer of graphene which is continuous on the layer of the barrier material, wherein the layer of graphene extends across the area for the electrical conductor, and the layer of graphene includes one to two atomic layers of graphene; and repeating forming a layer of the barrier material which is continuous and forming a layer of graphene which is continuous, to form a graphene heterolayer of the electrical conductor, wherein the graphene heterolayer comprises a plurality of alternating layers of graphene and layers of the barrier material; wherein forming the layer of the barrier material includes an atomic layer deposition (ALD) process, comprising: flowing boron trichloride gas over the substrate; subsequently ceasing flow of the boron trichloride gas over the substrate; flowing ammonia gas over the substrate; and subsequently ceasing flow of the ammonia gas over the substrate. Currently amended
The method of claim 12, wherein forming the layer of graphene includes a plasma enhanced chemical vapor deposition (P EC VD) process, comprising: heating the substrate to a temperature of 200 0 C to 400 °C; flowing a carbon-containing reagent gas over the substrate while the substrate is at 200 0 C to 400 ° C; and applying radio frequency (R F) power to the carbon-containing reagent gas. Original
The method of claim 12, wherein forming the layer of graphene includes a transfer process, comprising: forming the layer of graphene on a secondary substrate, separate from the substrate of the microelectronic device; removing the layer of graphene from the secondary substrate; and applying the layer of graphene to the substrate of the microelectronic device. Original
Canceled
Canceled
A method of forming a microelectronic device, the method comp ri sing: providing a substrate; and forming an electrically conductive nanoparticle film of an electrical conductor of the microelectronic device, the electrically conductive nanoparticle film being essentially free of organic binder material and comprising nanoparticles that contain a graphene heterolayer, the graphene heterolayer comprising a plurality of alternating layers of graphene and layers of a barrier material, wherein each layer of g raphene has one to two atomic layers of graphene, and each layer of the barrier material has one to three layers selected from the group consisting of hexagonal boron nitride, cubic boron nitride, and aluminum nitride;, wherein forming the electrically conductive nanoparticle film includes an additive process, comprising: dispensing a nanoparticle ink containing the nanoparticles and a carrier fluid onto the substrate to form a nanoparticle ink film in an area for the electrical conductor, by an additive process; and heating the nanoparticle ink film to remove at least a portion of a volatile material from the nanoparticle ink film. Currently amended
The method of claim 18, wherein the additive process is selected from the group consisting of a discrete droplet dispense process, a continuous extrusion process, a direct laser transfer process, an electrostatic deposition process, and an electrochemical deposition process. Original
Layer stacks claimed or described, ordered top of device to substrate.
microelectronic device with graphene heterolayer electrical conductor
thin film transistor with graphene heterolayer gate
Materials described outside the worked examples.
graphene
hexagonal boron nitride
h-BN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer. [0006]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 200–400 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
cubic boron nitride
c-BN
aluminum nitride
AlN
boron trichloride
BCl₃
ammonia
NH₃
carbon-containing reagent gas
Bernal bilayer graphene
FIG. 2C are cross sections of a microelectronic device depicting successive stages of an example method of forming an electrical conductor containing a …
FIG. 3 B are cross sections of another example microelectronic device containing an electrical conductor including a graphene heterolayer. [0008]
FIG. 4 B are cross sections of a microelectronic device depicting successive stages of another example method of forming an electrical conductor containing a …
FIG. 6 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer in a thin film transistor. …
FIG. 7 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer as an antenna for a bandgap …
FIG. 7 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer as an antenna for a bandgap …
FIG. 8 B are cross sections of an example microelectronic device containing a plurality of electrical conductors, each including a graphene heterolayer, …
FIG. 9 B are cross sections of an example microelectronic device containing a plurality of electrical conductors, each including a graphene heterolayer, to …
| — |
Thickness | ≤ 1 µm | — |
GRAPHENE TRANSISTORS WITH SELF-ALIGNED GATES
cubic boron nitride
c-BN
aluminum nitride
AlN
boron trichloride
BCl₃
ammonia
NH₃
carbon-containing reagent gas
Bernal bilayer graphene
FIG. 2C are cross sections of a microelectronic device depicting successive stages of an example method of forming an electrical conductor containing a …
FIG. 3 B are cross sections of another example microelectronic device containing an electrical conductor including a graphene heterolayer. [0008]
FIG. 4 B are cross sections of a microelectronic device depicting successive stages of another example method of forming an electrical conductor containing a …
FIG. 6 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer in a thin film transistor. …
FIG. 7 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer as an antenna for a bandgap …
FIG. 7 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer as an antenna for a bandgap …
FIG. 8 B are cross sections of an example microelectronic device containing a plurality of electrical conductors, each including a graphene heterolayer, …
FIG. 9 B are cross sections of an example microelectronic device containing a plurality of electrical conductors, each including a graphene heterolayer, to …
| — |
Thickness | ≤ 1 µm | — |
GRAPHENE TRANSISTORS WITH SELF-ALIGNED GATES
cubic boron nitride
c-BN
aluminum nitride
AlN
boron trichloride
BCl₃
ammonia
NH₃
carbon-containing reagent gas
Bernal bilayer graphene
FIG. 2C are cross sections of a microelectronic device depicting successive stages of an example method of forming an electrical conductor containing a …
FIG. 3 B are cross sections of another example microelectronic device containing an electrical conductor including a graphene heterolayer. [0008]
FIG. 4 B are cross sections of a microelectronic device depicting successive stages of another example method of forming an electrical conductor containing a …
FIG. 6 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer in a thin film transistor. …
FIG. 7 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer as an antenna for a bandgap …
FIG. 7 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer as an antenna for a bandgap …
FIG. 8 B are cross sections of an example microelectronic device containing a plurality of electrical conductors, each including a graphene heterolayer, …
FIG. 9 B are cross sections of an example microelectronic device containing a plurality of electrical conductors, each including a graphene heterolayer, to …
| — |
Thickness | ≤ 1 µm | — |
GRAPHENE TRANSISTORS WITH SELF-ALIGNED GATES
cubic boron nitride
c-BN
aluminum nitride
AlN
boron trichloride
BCl₃
ammonia
NH₃
carbon-containing reagent gas
Bernal bilayer graphene
FIG. 2C are cross sections of a microelectronic device depicting successive stages of an example method of forming an electrical conductor containing a …
FIG. 3 B are cross sections of another example microelectronic device containing an electrical conductor including a graphene heterolayer. [0008]
FIG. 4 B are cross sections of a microelectronic device depicting successive stages of another example method of forming an electrical conductor containing a …
FIG. 6 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer in a thin film transistor. …
FIG. 7 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer as an antenna for a bandgap …
FIG. 7 is a cross section of an example microelectronic device containing an electrical conductor including a graphene heterolayer as an antenna for a bandgap …
FIG. 8 B are cross sections of an example microelectronic device containing a plurality of electrical conductors, each including a graphene heterolayer, …
FIG. 9 B are cross sections of an example microelectronic device containing a plurality of electrical conductors, each including a graphene heterolayer, to …
| — |
Thickness | ≤ 1 µm | — |
GRAPHENE TRANSISTORS WITH SELF-ALIGNED GATES