Transistor Having Graphene Base

Francis J. Kub

Patent

Atlas literature

Patent

US 9,184,266

Transistor Having Graphene Base

Francis J. Kub

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 A, a graphene base transistor in accordance with the present invention includes an N-type emitter 101, an N-type collector 105 and a graphene material …

FIG. 2

FIG. 2 B, the collector transition layer can be a bandgap smoothing transition region used to smooth the potential barrier (grade the potential in the …

FIG. 3

FIGS. 3A and 3B. [094] In the exemplary device having the conduction band minimum diagram shown in FI G. 3A, an emitter comprising a N- doped semiconductor …

FIG. 4

FIG. 4. In the transfer and bond approach, in a ﬁrst step 401, graphene material consisting of one or more sheets of graphene are ﬁrst grown on a substrate …

FIG. 5

FIG. 5A, an exemplary transistor in accordance with the present invention can have an emitter made from N+ GaN, N+ AlGaN, or N+ A l N; an optional emitter …

FIG. 6

FIG. 6A, a transistor device in accordance with this embodiment of the present invention can have an N+ polysilicon emitter; an optional emitter transition …

FIG. 7

FIG. 7A, a transistor device in accordance with this embodiment of the present invention can have an N+ GaN or N+ AlGaN emitter; an optional emitter transition …

FIG. 8

FIG. 8A, a transistor device in accordance with this embodiment of the present invention can have an N+ I nGaAs or other appropriate semiconductor emitter; an …

FIG. 9

FIG. 9A, a transistor device in accordance with this embodiment of the present invention can have an N+ InGaAs or other appropriate semiconductor emitter; Page …

FIG. 10

FIG. 10 A, a transistor device in accordance with this embodiment of the present invention can have an N+ emitter comprising, for example, one of the SMNHE I …

FIG. 11

FIG. 11 A, a transistor device in accordance with this embodiment of the present invention can have an N+ emitter comprising, for example, one of the SMNHEI …

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 36 dependent

1
IndependentCgraphene material base layerhot-electron graphene base transistor
A transistor device comprising: a graphene material base layer comprising at least one sheet of graphene and further comprising at least one sheet of graphene optimized for formation of nucleation sites for atom attachment for epitaxial material growth; an emitter adjacent to a ﬁrst side of the graphene material base layer and forming an emitter/base interface therewith; a collector adjacent to a second side of graphene material base layer opposite the ﬁrst side and forming a collector/base interface therewith; and a plurality of electrodes, each of the plurality of electrodes being connected to and forming a separate electrical connection with one of the emitter, collector, and base; wherein the emitter has a conduction band minimum at a higher energy than a conduction band minimum of the graphene material base layer and is conﬁgured to inject electrons into the graphene material base layer, the injected electrons having an energy E substantially greater than a Fermi energy E.sub.F of the graphene material base layer to produce hot electrons in the graphene material base layer, where E is greater than E.sub.F+10 k.sub.B T and where k.sub.B is a Boltzmann constant and T is an absolute temperature of a lattice associated with the graphene material base layer.
1. 2
  Dependent← claim 1N-type semiconductor materialhot-electron graphene base transistor
  The transistor device according to claim 1, wherein the emitter comprises an N-type semiconductor material. Page 2 of 14 Docket No. 100598-US₃
2. 3
  Dependent← claim 1hot-electron graphene base transistor
  The transistor device according to claim 1, wherein the electrodes form ohmic electrical connection to the emitter, collector, and base.
3. 4
  Dependent← claim 1hot-electron graphene base transistor
  The transistor device according to claim 1, wherein the electrodes connected to the emitter and to the base layer form ohmic electrical connections and the electrode connected to the collector forms a Schottky connection.
4. 5
  Dependent← claim 1ZnOBNInGaNInAsPInPInGaAshot-electron graphene base transistor
  The transistor device according to claim 1, wherein the emitter comprises one or more of ZnO, BN, InGaN, I nAsP, I nP, I nGaAs, InA I As, I nGaSb, Diamond, GaN, GaAs, Silicon, 4H--SiC, GaSb, Germanium, A I P, ZnS, GaP, AISb, A I As, InGaN, and AIN emitter material layers.
5. 10
  Dependent← claim 1Chot-electron graphene base transistor
  The transistor device according to claim 1, wherein the base comprises a quantum well having energy levels and the carriers transport through the base layer by resonant tunneling.
6. 11
  Dependent← claim 1metal emitter materialhot-electron graphene base transistor
  The transistor device according to claim 1, wherein the emitter comprises a metal material, the device further including an emitter transition layer conﬁgured to provide an insulating tunnel injection structure disposed at the emitter interface with the graphene material base layer (emitter/base interface).
7. 12
  Dependent← claim 1N-type semiconductor materialhot-electron graphene base transistor
  The transistor device according to claim 1, wherein the collector comprises an N-type semiconductor material.
8. 13
  Dependent← claim 1ZnOBNInGaNInAsPInPInGaAshot-electron graphene base transistor
  The transistor device according to claim 1, wherein the collector comprises one or more of ZnO, BN, InGaN, I nAsP, I nP, I nGaAs, InA I As, I nGaSb, Diamond, GaN, GaAs, Silicon, 4H--SiC, GaSb, Germanium, Graphene, AI P, ZnS, GaP, AISb, A I As, InGaN, and AIN material layers.
9. 14
  Dependent← claim 1hot-electron graphene base transistor
  The transistor device according to claim 1, wherein the collector is deposited on a substrate.
10. 15
  Dependent← claim 1Chot-electron graphene base transistor
  The transistor device according to claim 1, wherein the graphene material base layer comprises N-type graphene.
11. 16
  Dependent← claim 1Chot-electron graphene base transistor
  The transistor device according to claim 1, wherein the graphene material base layer comprises P-type graphene.
12. 17
  Dependent← claim 1Chot-electron graphene base transistor
  The transistor device according to claim 1, wherein the graphene material base layer comprises a layered structure of a plurality of graphene sheets, a graphene sheet adjacent to the emitter being conﬁgured to facilitate the growth of emitter material on the graphene material base layer ﬁrst side. Page 4 of 14 Docket No. 100598-US₃
13. 18
  Dependent← claim 1Chot-electron graphene base transistor
  The transistor device according to claim 1, wherein the graphene material base layer comprises a layered structure of a plurality of graphene sheets, a graphene sheet adjacent to the emitter being conﬁgured to improve interaction of the graphene material with a material forming the emitter.
14. 19
  Dependent← claim 1Chot-electron graphene base transistor
  The transistor device according to claim 1, wherein the graphene material base layer comprises a layered structure of a plurality of graphene sheets, a graphene sheet adjacent to the emitter being conﬁgured to improve growth of emitter material on the graphene material base layer.
15. 20
  Dependent← claim 1Chot-electron graphene base transistor
  The transistor device according to claim 1, wherein the graphene material base layer comprises a layered structure of a plurality of graphene sheets, a graphene sheet adjacent to the collector being conﬁgured to improve interaction of the graphene material with a material forming the collector.
16. 21
  Dependent← claim 1hot-electron graphene base transistor
  The transistor device according to claim 1, further comprising an emitter transition layer within the emitter disposed at the emitter interface with the graphene material base layer (emitter/base interface) and forming an interface with each of the emitter and the graphene material base layer; wherein the emitter transition layer is conﬁgured to provide one of a thermionic emission injection structure, a planar doped barrier thermionic emission injection structure, a camel thermionic emission injection structure, a graded bandgap thermionic emission structure, a N-type/i-layer/P-type/i-layer (NIPI) doping superlattice injection structure, a superlattice injection structure, a tunneling injection structure, a metal-oxide tunnel injection structure, a Fowler Nordheim injection structure, a resonant tunneling injection structure, between the emitter and the graphene material base layer.
17. 22
  Dependent← claim 1hot-electron graphene base transistor
  The transistor device according to claim 1, further comprising a collector transition layer disposed at the collector interface with the Page 5 of 14 Docket No. 100598-US₃ graphene material base layer (collector/base interface) and forming an interface with each of the graphene material base layer and the collector; wherein the collector transition layer is conﬁgured to smooth a conduction band potential barrier between the graphene material base layer and the collector and to facilitate the transport of electrons into the collector.
18. 23
  Dependent← claim 1Chot-electron graphene base transistor
  The transistor device according to claim 1 wherein the graphene material base forms a quantum well base having discrete allowed energy levels for the transit of electrons at the discrete allowed energy levels from the emitter to the collector.
19. 24
  Dependent← claim 1Chot-electron graphene base transistor
  The transistor according to claim 1 wherein current transits the graphene material base layer as ballistic electrons.
20. 25
  Dependent← claim 1Chot-electron graphene base transistor
  The transistor according to claim 1 where in the graphene material base layer has one of a graphene nanoribbon design having multiple graphene nanoribbons, an antidot design, a bi-layer material layer, and selected doping to introduce a bandgap into the graphene base material layer.
26
IndependentCgraphene material base layernon-hot-electron graphene base transistor
A transistor device comprising: a graphene material base layer comprising at least one sheet of graphene and further comprising at least one sheet of graphene optimized for formation of nucleation sites for atom attachment for epitaxial material growth; a emitter adjacent to a ﬁrst side of the graphene material base layer and forming an emitter/base interface therewith, the emitter having a conduction band minimum lower than a conduction band minimum of the graphene material base layer and being conﬁgured to inject electrons having an energy E less than a Fermi energy E.sub.F of the graphene material base layer to produce non-hot electrons in the graphene material base layer; Page 6 of 14 Docket No. 100598-US₃ a collector adjacent to a second side of graphene material base layer opposite the ﬁrst side and forming a collector/base interface therewith, the electron collector having a conduction band minimum lower than the conduction band minimum of the graphene material base layer and being conﬁgured to receive electrons from the graphene material base layer; and a plurality of electrodes, each of the plurality of electrodes being connected to and forming a separate electrical connection with one of the emitter, collector, and base.
1. 27
  Dependent← claim 26N-type semiconductor materialnon-hot-electron graphene base transistor
  The transistor device according to claim 26, wherein the emitter comprises an N-type semiconductor material.
2. 28
  Dependent← claim 26CdSeInAsSnO2:FInSbZnOBNnon-hot-electron graphene base transistor
  The transistor device according to claim 26, wherein the emitter comprises one of CdSe, InAs, Sn O 2:F, I nSb, ZnO, BN, CdTe, C dS, ln2O 3:Sn, InGaN, I nAsP, I nP, I nGaAs, InA I As, I nGaSb, and diamond emitter material layers.
3. 29
  Dependent← claim 26N-type semiconductor materialnon-hot-electron graphene base transistor
  The transistor device according to claim 26, wherein the collector comprises an N-type semiconductor material.
4. 30
  Dependent← claim 26CdSeInAsSnO2:FInSbZnOBNnon-hot-electron graphene base transistor
  The transistor device according to claim 26, wherein the collector comprises one of CdSe, InAs, Sn O 2:F, I nSb, ZnO, BN, CdTe, C dS, ln2O 3:Sn, InGaN, I nAsP, I nP, I nGaAs, InA I As, I nGaSb, graphene, and diamond material layers.
5. 31
  Dependent← claim 26Cnon-hot-electron graphene base transistor
  The transistor device according to claim 26, wherein the graphene material base layer comprises P-type graphene.
6. 32
  Dependent← claim 26Cnon-hot-electron graphene base transistor
  The transistor device according to claim 26, wherein the graphene material base layer comprises a layered structure of a plurality of graphene sheets, a graphene sheet adjacent to the emitter being conﬁgured to Page 7 of 14 Docket No. 100598-US₃ facilitate the growth of emitter material on the graphene material base layer ﬁrst side.
7. 33
  Dependent← claim 26Cnon-hot-electron graphene base transistor
  The transistor device according to claim 26, wherein the graphene material base layer comprises a layered structure of a plurality of graphene sheets, a graphene sheet adjacent to the emitter being conﬁgured to improve the interaction of the graphene material with a material forming the emitter.
8. 34
  Dependent← claim 26Cnon-hot-electron graphene base transistor
  The transistor device according to claim 26, wherein the graphene material base layer comprises a layered structure of a plurality of graphene sheets, a graphene sheet adjacent to the collector being conﬁgured to improve interaction of the graphene material with a material forming the collector.
9. 35
  Dependent← claim 26Cnon-hot-electron graphene base transistor
  The transistor according to claim 26 where in the graphene material base layer has one of a graphene nanoribbon design having multiple graphene nanoribbons, an antidot design, a bi-layer material layer, and surface doping to introduce a bandgap into the graphene base material layer.
10. 36
  Dependent← claim 26non-hot-electron graphene base transistor
  The transistor device according to claim 26, further comprising a collector transition layer disposed at the collector interface with the graphene material base layer (collector/base interface and forming an interface with each of the graphene material base layer and the collector, wherein the collector transition layer is conﬁgured to smooth a bandgap between the graphene material base layer and the collector and to facilitate the collection of electrons into the collector.
11. 37
  Dependent← claim 26semimetal emitter materialnon-hot-electron graphene base transistor
  The transistor device according to claim 26, wherein the emitter comprises a semimetal material.
12. 38
  Dependent← claim 26non-hot-electron graphene base transistor
  The transistor device according to claim 26, further comprising an emitter transition layer within the emitter disposed at the emitter Page 8 of 14 Docket No. 100598-US₃ interface with the graphene material base layer (emitter/base interface) and forming an interface with each of the emitter and the graphene material base layer; wherein the emitter transition layer is conﬁgured to provide one of a thermionic emission injection structure, a planar doped barrier thermionic emission injection structure, a camel thermionic emission injection structure, a graded bandgap thermionic emission structure, a N-type/i-layer/P-type/i-layer (NIPI) doping superlattice injection structure, a superlattice injection structure, a tunneling injection structure, a metal-oxide tunnel injection structure, a Fowler Nordheim injection structure, a resonant tunneling injection structure, between the emitter and the graphene material base layer. Page 9 of 14

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

hot-electron graphene base transistor

collectorcollector

collector_transition_layercollector transition layer

Cbase

emitter_transition_layeremitter transition layer

emitteremitter

non-hot-electron graphene base transistor

Materials

Materials described outside the worked examples.

graphene

Claimed Base Material

Claimed Emitter Or Collector Material

graphene material base layer

Characterization

Measurements and analyses referenced in the patent, with their drawing references.

fet electrical

Fet Electrical

FIG. 1 A, a graphene base transistor in accordance with the present invention includes an N-type emitter 101, an N-type collector 105 and a graphene material …

Figure references

FIG. 1

graphene

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
graphene sheet resistance on SiC silicon face	750–1000 ohm/square	C
graphene sheet resistance on copper	1200–1500 ohm/square

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Transistor Having Graphene Base | Matter42 Literature