Patent
US 9,373,685GRAPHENE DEVICE AND ELECTRONIC APPARATUS
Hyeon-jin SHIN
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 9,373,685Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a graphene device according to example embodiments; [53]
FIG. 2 is a schematic cross-sectional view of a graphene device according to example embodiments; [54]
FIGS. 3 and 4 are schematic cross-sectional views of graphene devices according to example embodiments; [55]
FIG. 4, the graphene device 103 may include both the semiconductor layer 80 and the injection layer 90. [92]
FIG. 5 is a schematic cross-sectional view of a graphene device according to example embodiments; [56]
FIG. 6 is a schematic cross-sectional view of a graphene device according to example embodiments; [57]
FIG. 7 is a view of a graphene device used as an emission device, according to example embodiments; [58]
FIG. 8 is a theoretical view of a change in a work function of a graphene layer according to a voltage applied to a gate of a transistor, according to example …
FIG. 9 is a view of a result of a measurement of a change in a drain current according to a voltage applied to a gate of a transistor, according to example …
FIG. 10 is a view of a result of an examination of an emission rate in an emission layer according to a voltage applied to a gate of a transistor, according to …
FIG. 11 is a view of when the emission device of
FIG. 12 is a view of when the emission device of
FIGS. 13 to 15 are views of display apparatuses including a plurality of emission devices that operate as a bottom emission type, according to example …
FIG. 14. The emission device 20 0 W may be one of the emission devices described previously or a variation of them. The plurality of emission devices 20 0 W …
FIG. 15, the plurality of emission devices 200R, 200G, and 200B may include an active layer emitting a specific color light except for a white light, and …
FIG. 16 is a schematic cross-sectional view of a graphene device that operates as a detection device, according to example embodiments; [65]
FIGS. 17 and 18 are schematic cross-sectional views of graphene devices according to example embodiments; [66]
FIG. 18 may be the same as the graphene device 107 illustrated in
FIGS. 19 to 21 are schematic cross-sectional views of graphene devices according to example embodiments; and [67]
FIG. 20, the graphene device 110 may be the same as the graphene device 109 described above, except the graphene device 110 may further include a semiconductor …
FIG. 21, the graphene device 111 may be the same as the graphene device 100 described above with reference to
FIG. 22 is a schematic cross-sectional view of a graphene device according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device comprising: an active layer including one of an emission layer and a photoconductive layer, the emission layer being configured to emit light, the photoconductive layer being configured to react with light and photoelectrically convert light; a graphene layer contacting the active layer, the graphene layer and the active layer configured to provide a pathway for current flow; and a first electrode spaced apart from the graphene layer, the first electrode configured to control a work function of the graphene layer based on a voltage applied to the first electrode.
The graphene device of claim 1, further comprising: a second electrode contacting the active layer.
The graphene device of claim 1, wherein the graphene layer is a channel of a transistor, and the first electrode is a gate of the transistor.
The graphene device of claim 1, further comprising: a second electrode contacting the active layer, wherein a polarity of carriers Page 2 Application No.: 14/180,928 Attorney Docket No.: 2557 SI -002126-US moving from the active layer to the graphene layer is opposite to a polarity of carriers moving from the active layer to the second electrode.
The graphene device of claim 1, wherein the first electrode is configured to change an energy barrier between the graphene layer and the active layer, based on the voltage applied to the first electrode.
The graphene device of claim 1, wherein the first electrode is configured to increase a movement of holes to the active layer in response to an increase in the work function of the graphene layer if the voltage applied to the first electrode is negative.
The graphene device of claim 1, wherein the first electrode is configured to increase a movement of electrons to the active layer in response to a decrease in the work function of the graphene layer if the voltage applied to the first electrode is positive.
The graphene device of claim 1, wherein the active layer overlaps at least a portion of the first electrode.
[[The]]A graphene device of claim 1, further comprising: an active layer; Page 3 Application No.: 14/180,928 Attorney Docket No.: 2557S I -002126-US a graphene layer contacting the active layer, the graphene layer and the active layer configured to provide a pathway for current flow; a semiconductor layer contacting the graphene layer; and a first electrode spaced apart from the graphene layer, the first electrode configured to control a work function of the graphene layer based on a voltage applied to the first electrode.
The graphene device of claim 1, wherein the active layer includes [[an]] the emission layer that is configured to emit light.
The graphene device of claim 1, wherein the active layer includes [[a]] the p hotoconductive layer, the photoconductive layer is configured to react with light, and the photoconductive layer is configured to photoelectrically convert light.
An electronic apparatus comprising: the graphene device according to claim 1.
A graphene device comprising: a transistor including a source, a gate, and a drain; an active layer on the gate, the active layer including one of an emission layer and a photoconductive layer, the emission layer being configured to emit light, the photoconductive layer being configured to react with light and photoelectrically convert light; and Page 4 Application No.: 14/180,928 Attorney Docket No.: 2557S I -002126-US a graphene layer between the gate and the active layer, the graphene layer configured to function both as an electrode of the active layer and a channel layer of the transistor.
The graphene device of claim 20, wherein the graphene layer is in contact with one of the source and the drain, and the graphene layer is spaced apart from an other of the source and the drain.
The graphene device of claim 20, further comprising: an active electrode contacting the active layer, wherein the active electrode is configured to form an electric field on the active layer based on a voltage applied to the graphene layer.
The graphene device of claim 20, wherein the gate is configured to change a work function of the graphene layer according to a voltage applied to the gate.
The graphene device of claim 20, wherein the gate is configured to change an energy barrier between the graphene layer and the active layer according to a voltage applied to the gate.
(Curren t ly Amended) The graphene device of claim 20, wherein the active layer includes [[an]] the emission layer that is configured to emit light.
The graphene device of claim 20, wherein the active layer includes [[a]] the photoconductive layer; the photoconductive layer is configured to react with light, and the photoconductive layer is configured to is photoelectrically convert light. *** END CLAIM LISTING *** Page
Layer stacks claimed or described, ordered top of device to substrate.
graphene device with work-function-controlled graphene layer
graphene-based emission device
Materials described outside the worked examples.
graphene
emission layer material
photoconductive layer material
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8 is a theoretical view of a change in a work function of a graphene layer according to a voltage applied to a gate of a transistor, according to example …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,373,685Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a graphene device according to example embodiments; [53]
FIG. 2 is a schematic cross-sectional view of a graphene device according to example embodiments; [54]
FIGS. 3 and 4 are schematic cross-sectional views of graphene devices according to example embodiments; [55]
FIG. 4, the graphene device 103 may include both the semiconductor layer 80 and the injection layer 90. [92]
FIG. 5 is a schematic cross-sectional view of a graphene device according to example embodiments; [56]
FIG. 6 is a schematic cross-sectional view of a graphene device according to example embodiments; [57]
FIG. 7 is a view of a graphene device used as an emission device, according to example embodiments; [58]
FIG. 8 is a theoretical view of a change in a work function of a graphene layer according to a voltage applied to a gate of a transistor, according to example …
FIG. 9 is a view of a result of a measurement of a change in a drain current according to a voltage applied to a gate of a transistor, according to example …
FIG. 10 is a view of a result of an examination of an emission rate in an emission layer according to a voltage applied to a gate of a transistor, according to …
FIG. 11 is a view of when the emission device of
FIG. 12 is a view of when the emission device of
FIGS. 13 to 15 are views of display apparatuses including a plurality of emission devices that operate as a bottom emission type, according to example …
FIG. 14. The emission device 20 0 W may be one of the emission devices described previously or a variation of them. The plurality of emission devices 20 0 W …
FIG. 15, the plurality of emission devices 200R, 200G, and 200B may include an active layer emitting a specific color light except for a white light, and …
FIG. 16 is a schematic cross-sectional view of a graphene device that operates as a detection device, according to example embodiments; [65]
FIGS. 17 and 18 are schematic cross-sectional views of graphene devices according to example embodiments; [66]
FIG. 18 may be the same as the graphene device 107 illustrated in
FIGS. 19 to 21 are schematic cross-sectional views of graphene devices according to example embodiments; and [67]
FIG. 20, the graphene device 110 may be the same as the graphene device 109 described above, except the graphene device 110 may further include a semiconductor …
FIG. 21, the graphene device 111 may be the same as the graphene device 100 described above with reference to
FIG. 22 is a schematic cross-sectional view of a graphene device according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device comprising: an active layer including one of an emission layer and a photoconductive layer, the emission layer being configured to emit light, the photoconductive layer being configured to react with light and photoelectrically convert light; a graphene layer contacting the active layer, the graphene layer and the active layer configured to provide a pathway for current flow; and a first electrode spaced apart from the graphene layer, the first electrode configured to control a work function of the graphene layer based on a voltage applied to the first electrode.
The graphene device of claim 1, further comprising: a second electrode contacting the active layer.
The graphene device of claim 1, wherein the graphene layer is a channel of a transistor, and the first electrode is a gate of the transistor.
The graphene device of claim 1, further comprising: a second electrode contacting the active layer, wherein a polarity of carriers Page 2 Application No.: 14/180,928 Attorney Docket No.: 2557 SI -002126-US moving from the active layer to the graphene layer is opposite to a polarity of carriers moving from the active layer to the second electrode.
The graphene device of claim 1, wherein the first electrode is configured to change an energy barrier between the graphene layer and the active layer, based on the voltage applied to the first electrode.
The graphene device of claim 1, wherein the first electrode is configured to increase a movement of holes to the active layer in response to an increase in the work function of the graphene layer if the voltage applied to the first electrode is negative.
The graphene device of claim 1, wherein the first electrode is configured to increase a movement of electrons to the active layer in response to a decrease in the work function of the graphene layer if the voltage applied to the first electrode is positive.
The graphene device of claim 1, wherein the active layer overlaps at least a portion of the first electrode.
[[The]]A graphene device of claim 1, further comprising: an active layer; Page 3 Application No.: 14/180,928 Attorney Docket No.: 2557S I -002126-US a graphene layer contacting the active layer, the graphene layer and the active layer configured to provide a pathway for current flow; a semiconductor layer contacting the graphene layer; and a first electrode spaced apart from the graphene layer, the first electrode configured to control a work function of the graphene layer based on a voltage applied to the first electrode.
The graphene device of claim 1, wherein the active layer includes [[an]] the emission layer that is configured to emit light.
The graphene device of claim 1, wherein the active layer includes [[a]] the p hotoconductive layer, the photoconductive layer is configured to react with light, and the photoconductive layer is configured to photoelectrically convert light.
An electronic apparatus comprising: the graphene device according to claim 1.
A graphene device comprising: a transistor including a source, a gate, and a drain; an active layer on the gate, the active layer including one of an emission layer and a photoconductive layer, the emission layer being configured to emit light, the photoconductive layer being configured to react with light and photoelectrically convert light; and Page 4 Application No.: 14/180,928 Attorney Docket No.: 2557S I -002126-US a graphene layer between the gate and the active layer, the graphene layer configured to function both as an electrode of the active layer and a channel layer of the transistor.
The graphene device of claim 20, wherein the graphene layer is in contact with one of the source and the drain, and the graphene layer is spaced apart from an other of the source and the drain.
The graphene device of claim 20, further comprising: an active electrode contacting the active layer, wherein the active electrode is configured to form an electric field on the active layer based on a voltage applied to the graphene layer.
The graphene device of claim 20, wherein the gate is configured to change a work function of the graphene layer according to a voltage applied to the gate.
The graphene device of claim 20, wherein the gate is configured to change an energy barrier between the graphene layer and the active layer according to a voltage applied to the gate.
(Curren t ly Amended) The graphene device of claim 20, wherein the active layer includes [[an]] the emission layer that is configured to emit light.
The graphene device of claim 20, wherein the active layer includes [[a]] the photoconductive layer; the photoconductive layer is configured to react with light, and the photoconductive layer is configured to is photoelectrically convert light. *** END CLAIM LISTING *** Page
Layer stacks claimed or described, ordered top of device to substrate.
graphene device with work-function-controlled graphene layer
graphene-based emission device
Materials described outside the worked examples.
graphene
emission layer material
photoconductive layer material
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8 is a theoretical view of a change in a work function of a graphene layer according to a voltage applied to a gate of a transistor, according to example …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,373,685Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a graphene device according to example embodiments; [53]
FIG. 2 is a schematic cross-sectional view of a graphene device according to example embodiments; [54]
FIGS. 3 and 4 are schematic cross-sectional views of graphene devices according to example embodiments; [55]
FIG. 4, the graphene device 103 may include both the semiconductor layer 80 and the injection layer 90. [92]
FIG. 5 is a schematic cross-sectional view of a graphene device according to example embodiments; [56]
FIG. 6 is a schematic cross-sectional view of a graphene device according to example embodiments; [57]
FIG. 7 is a view of a graphene device used as an emission device, according to example embodiments; [58]
FIG. 8 is a theoretical view of a change in a work function of a graphene layer according to a voltage applied to a gate of a transistor, according to example …
FIG. 9 is a view of a result of a measurement of a change in a drain current according to a voltage applied to a gate of a transistor, according to example …
FIG. 10 is a view of a result of an examination of an emission rate in an emission layer according to a voltage applied to a gate of a transistor, according to …
FIG. 11 is a view of when the emission device of
FIG. 12 is a view of when the emission device of
FIGS. 13 to 15 are views of display apparatuses including a plurality of emission devices that operate as a bottom emission type, according to example …
FIG. 14. The emission device 20 0 W may be one of the emission devices described previously or a variation of them. The plurality of emission devices 20 0 W …
FIG. 15, the plurality of emission devices 200R, 200G, and 200B may include an active layer emitting a specific color light except for a white light, and …
FIG. 16 is a schematic cross-sectional view of a graphene device that operates as a detection device, according to example embodiments; [65]
FIGS. 17 and 18 are schematic cross-sectional views of graphene devices according to example embodiments; [66]
FIG. 18 may be the same as the graphene device 107 illustrated in
FIGS. 19 to 21 are schematic cross-sectional views of graphene devices according to example embodiments; and [67]
FIG. 20, the graphene device 110 may be the same as the graphene device 109 described above, except the graphene device 110 may further include a semiconductor …
FIG. 21, the graphene device 111 may be the same as the graphene device 100 described above with reference to
FIG. 22 is a schematic cross-sectional view of a graphene device according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device comprising: an active layer including one of an emission layer and a photoconductive layer, the emission layer being configured to emit light, the photoconductive layer being configured to react with light and photoelectrically convert light; a graphene layer contacting the active layer, the graphene layer and the active layer configured to provide a pathway for current flow; and a first electrode spaced apart from the graphene layer, the first electrode configured to control a work function of the graphene layer based on a voltage applied to the first electrode.
The graphene device of claim 1, further comprising: a second electrode contacting the active layer.
The graphene device of claim 1, wherein the graphene layer is a channel of a transistor, and the first electrode is a gate of the transistor.
The graphene device of claim 1, further comprising: a second electrode contacting the active layer, wherein a polarity of carriers Page 2 Application No.: 14/180,928 Attorney Docket No.: 2557 SI -002126-US moving from the active layer to the graphene layer is opposite to a polarity of carriers moving from the active layer to the second electrode.
The graphene device of claim 1, wherein the first electrode is configured to change an energy barrier between the graphene layer and the active layer, based on the voltage applied to the first electrode.
The graphene device of claim 1, wherein the first electrode is configured to increase a movement of holes to the active layer in response to an increase in the work function of the graphene layer if the voltage applied to the first electrode is negative.
The graphene device of claim 1, wherein the first electrode is configured to increase a movement of electrons to the active layer in response to a decrease in the work function of the graphene layer if the voltage applied to the first electrode is positive.
The graphene device of claim 1, wherein the active layer overlaps at least a portion of the first electrode.
[[The]]A graphene device of claim 1, further comprising: an active layer; Page 3 Application No.: 14/180,928 Attorney Docket No.: 2557S I -002126-US a graphene layer contacting the active layer, the graphene layer and the active layer configured to provide a pathway for current flow; a semiconductor layer contacting the graphene layer; and a first electrode spaced apart from the graphene layer, the first electrode configured to control a work function of the graphene layer based on a voltage applied to the first electrode.
The graphene device of claim 1, wherein the active layer includes [[an]] the emission layer that is configured to emit light.
The graphene device of claim 1, wherein the active layer includes [[a]] the p hotoconductive layer, the photoconductive layer is configured to react with light, and the photoconductive layer is configured to photoelectrically convert light.
An electronic apparatus comprising: the graphene device according to claim 1.
A graphene device comprising: a transistor including a source, a gate, and a drain; an active layer on the gate, the active layer including one of an emission layer and a photoconductive layer, the emission layer being configured to emit light, the photoconductive layer being configured to react with light and photoelectrically convert light; and Page 4 Application No.: 14/180,928 Attorney Docket No.: 2557S I -002126-US a graphene layer between the gate and the active layer, the graphene layer configured to function both as an electrode of the active layer and a channel layer of the transistor.
The graphene device of claim 20, wherein the graphene layer is in contact with one of the source and the drain, and the graphene layer is spaced apart from an other of the source and the drain.
The graphene device of claim 20, further comprising: an active electrode contacting the active layer, wherein the active electrode is configured to form an electric field on the active layer based on a voltage applied to the graphene layer.
The graphene device of claim 20, wherein the gate is configured to change a work function of the graphene layer according to a voltage applied to the gate.
The graphene device of claim 20, wherein the gate is configured to change an energy barrier between the graphene layer and the active layer according to a voltage applied to the gate.
(Curren t ly Amended) The graphene device of claim 20, wherein the active layer includes [[an]] the emission layer that is configured to emit light.
The graphene device of claim 20, wherein the active layer includes [[a]] the photoconductive layer; the photoconductive layer is configured to react with light, and the photoconductive layer is configured to is photoelectrically convert light. *** END CLAIM LISTING *** Page
Layer stacks claimed or described, ordered top of device to substrate.
graphene device with work-function-controlled graphene layer
graphene-based emission device
Materials described outside the worked examples.
graphene
emission layer material
photoconductive layer material
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8 is a theoretical view of a change in a work function of a graphene layer according to a voltage applied to a gate of a transistor, according to example …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,373,685Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a graphene device according to example embodiments; [53]
FIG. 2 is a schematic cross-sectional view of a graphene device according to example embodiments; [54]
FIGS. 3 and 4 are schematic cross-sectional views of graphene devices according to example embodiments; [55]
FIG. 4, the graphene device 103 may include both the semiconductor layer 80 and the injection layer 90. [92]
FIG. 5 is a schematic cross-sectional view of a graphene device according to example embodiments; [56]
FIG. 6 is a schematic cross-sectional view of a graphene device according to example embodiments; [57]
FIG. 7 is a view of a graphene device used as an emission device, according to example embodiments; [58]
FIG. 8 is a theoretical view of a change in a work function of a graphene layer according to a voltage applied to a gate of a transistor, according to example …
FIG. 9 is a view of a result of a measurement of a change in a drain current according to a voltage applied to a gate of a transistor, according to example …
FIG. 10 is a view of a result of an examination of an emission rate in an emission layer according to a voltage applied to a gate of a transistor, according to …
FIG. 11 is a view of when the emission device of
FIG. 12 is a view of when the emission device of
FIGS. 13 to 15 are views of display apparatuses including a plurality of emission devices that operate as a bottom emission type, according to example …
FIG. 14. The emission device 20 0 W may be one of the emission devices described previously or a variation of them. The plurality of emission devices 20 0 W …
FIG. 15, the plurality of emission devices 200R, 200G, and 200B may include an active layer emitting a specific color light except for a white light, and …
FIG. 16 is a schematic cross-sectional view of a graphene device that operates as a detection device, according to example embodiments; [65]
FIGS. 17 and 18 are schematic cross-sectional views of graphene devices according to example embodiments; [66]
FIG. 18 may be the same as the graphene device 107 illustrated in
FIGS. 19 to 21 are schematic cross-sectional views of graphene devices according to example embodiments; and [67]
FIG. 20, the graphene device 110 may be the same as the graphene device 109 described above, except the graphene device 110 may further include a semiconductor …
FIG. 21, the graphene device 111 may be the same as the graphene device 100 described above with reference to
FIG. 22 is a schematic cross-sectional view of a graphene device according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device comprising: an active layer including one of an emission layer and a photoconductive layer, the emission layer being configured to emit light, the photoconductive layer being configured to react with light and photoelectrically convert light; a graphene layer contacting the active layer, the graphene layer and the active layer configured to provide a pathway for current flow; and a first electrode spaced apart from the graphene layer, the first electrode configured to control a work function of the graphene layer based on a voltage applied to the first electrode.
The graphene device of claim 1, further comprising: a second electrode contacting the active layer.
The graphene device of claim 1, wherein the graphene layer is a channel of a transistor, and the first electrode is a gate of the transistor.
The graphene device of claim 1, further comprising: a second electrode contacting the active layer, wherein a polarity of carriers Page 2 Application No.: 14/180,928 Attorney Docket No.: 2557 SI -002126-US moving from the active layer to the graphene layer is opposite to a polarity of carriers moving from the active layer to the second electrode.
The graphene device of claim 1, wherein the first electrode is configured to change an energy barrier between the graphene layer and the active layer, based on the voltage applied to the first electrode.
The graphene device of claim 1, wherein the first electrode is configured to increase a movement of holes to the active layer in response to an increase in the work function of the graphene layer if the voltage applied to the first electrode is negative.
The graphene device of claim 1, wherein the first electrode is configured to increase a movement of electrons to the active layer in response to a decrease in the work function of the graphene layer if the voltage applied to the first electrode is positive.
The graphene device of claim 1, wherein the active layer overlaps at least a portion of the first electrode.
[[The]]A graphene device of claim 1, further comprising: an active layer; Page 3 Application No.: 14/180,928 Attorney Docket No.: 2557S I -002126-US a graphene layer contacting the active layer, the graphene layer and the active layer configured to provide a pathway for current flow; a semiconductor layer contacting the graphene layer; and a first electrode spaced apart from the graphene layer, the first electrode configured to control a work function of the graphene layer based on a voltage applied to the first electrode.
The graphene device of claim 1, wherein the active layer includes [[an]] the emission layer that is configured to emit light.
The graphene device of claim 1, wherein the active layer includes [[a]] the p hotoconductive layer, the photoconductive layer is configured to react with light, and the photoconductive layer is configured to photoelectrically convert light.
An electronic apparatus comprising: the graphene device according to claim 1.
A graphene device comprising: a transistor including a source, a gate, and a drain; an active layer on the gate, the active layer including one of an emission layer and a photoconductive layer, the emission layer being configured to emit light, the photoconductive layer being configured to react with light and photoelectrically convert light; and Page 4 Application No.: 14/180,928 Attorney Docket No.: 2557S I -002126-US a graphene layer between the gate and the active layer, the graphene layer configured to function both as an electrode of the active layer and a channel layer of the transistor.
The graphene device of claim 20, wherein the graphene layer is in contact with one of the source and the drain, and the graphene layer is spaced apart from an other of the source and the drain.
The graphene device of claim 20, further comprising: an active electrode contacting the active layer, wherein the active electrode is configured to form an electric field on the active layer based on a voltage applied to the graphene layer.
The graphene device of claim 20, wherein the gate is configured to change a work function of the graphene layer according to a voltage applied to the gate.
The graphene device of claim 20, wherein the gate is configured to change an energy barrier between the graphene layer and the active layer according to a voltage applied to the gate.
(Curren t ly Amended) The graphene device of claim 20, wherein the active layer includes [[an]] the emission layer that is configured to emit light.
The graphene device of claim 20, wherein the active layer includes [[a]] the photoconductive layer; the photoconductive layer is configured to react with light, and the photoconductive layer is configured to is photoelectrically convert light. *** END CLAIM LISTING *** Page
Layer stacks claimed or described, ordered top of device to substrate.
graphene device with work-function-controlled graphene layer
graphene-based emission device
Materials described outside the worked examples.
graphene
emission layer material
photoconductive layer material
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8 is a theoretical view of a change in a work function of a graphene layer according to a voltage applied to a gate of a transistor, according to example …
Related documents with shared materials, methods, properties, or citations.
graphene-based photodetection device
graphene transistor with dual-function graphene channel/electrode
semiconductor layer
FIG. 9 is a view of a result of a measurement of a change in a drain current according to a voltage applied to a gate of a transistor, according to example …
FIG. 10 is a view of a result of an examination of an emission rate in an emission layer according to a voltage applied to a gate of a transistor, according to …
graphene-based photodetection device
graphene transistor with dual-function graphene channel/electrode
semiconductor layer
FIG. 9 is a view of a result of a measurement of a change in a drain current according to a voltage applied to a gate of a transistor, according to example …
FIG. 10 is a view of a result of an examination of an emission rate in an emission layer according to a voltage applied to a gate of a transistor, according to …
graphene-based photodetection device
graphene transistor with dual-function graphene channel/electrode
semiconductor layer
FIG. 9 is a view of a result of a measurement of a change in a drain current according to a voltage applied to a gate of a transistor, according to example …
FIG. 10 is a view of a result of an examination of an emission rate in an emission layer according to a voltage applied to a gate of a transistor, according to …
graphene-based photodetection device
graphene transistor with dual-function graphene channel/electrode
semiconductor layer
FIG. 9 is a view of a result of a measurement of a change in a drain current according to a voltage applied to a gate of a transistor, according to example …
FIG. 10 is a view of a result of an examination of an emission rate in an emission layer according to a voltage applied to a gate of a transistor, according to …