Patent
US 9,508,885GRAPHENE FIELD EFFECT TRANSISTOR FOR RADIATION DETECTION
Mary J. Li
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,508,885Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B shows a side view of a graphene nano-ribbon field effect transistor (GFET) based radiation sensor (RS), according to one embodiment consistent with the …
FIG. 2B shows gamma radiation responses of the GFET-RS device, post-anneal resistance, according to one embodiment consistent with the present invention. A …
FIG. 3 shows X-ray radiation responses of the GFET-RS device under various exposure conditions, according to one embodiment consistent with the present …
FIG. 4A is a graph showing charged particle radiation responses by the GFET-RS device, for electron radiation, according to one embodiment consistent with the …
FIGS. 5A-5 B are graphs showing Argon heavy ion radiation responses by the GFET-RS device, according to one embodiment consistent with the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A radiation hardened space based satellite in Earth orbit sensor, comprising: a silicon substrate with a silicon oxide layer d ispos ed thereon; a layer of graphene comprising graphene flakes from highly oriented pyrolitic crystals including a one-atomic layer thick exfoliated graphene layer deposited on a silicon substrate. with a silicon dioxide substrate thereon of approximately 90 nm thickness. with metal pads as source and gate disposed on said silicon oxide layer further onto arrays of graphene nano-ribbon channels used in conjunction with undoped substrates enhancing the sensitivity of measurin g enerav of radiation deposited in an absorber with a=3lving an electric field between an electricall y biased substrate electrode and a mranhene channel forming an intense field is around the g raphene nano-ribbons with attracted ionized charges to a location directly under the laver of graphene before the recombination process occurs; and a source contact and a drain contact disposed on said silicon substrate.
The radiation sensor of claim 1, wherein said graphene is made using an exfoliation process.
The radiation sensor of claim 1, wherein said source contact is made from one of a Pd/Au combination and a Ti/Pd/AU combination and said drain contact aro-mado from Pd/Au or=Ti/Pd/Au is made from one of a Pd/Au combination and a Ti/Pd/AU combination.
The radiation sensor of claim 1, wherein said source contact and said drain contact are defined by photo-beam lithography or e-beam lithography during fabrication.
The radiation sensor of claim 1, wherein said graphene is stable in a temperature range from 4 * C-2800 *C.
An integrated circuit package comprising the radiation sensor of claim 1. 4 PAG E 4 16 * RCV D A T 7/191 2016 11:20:17 AM [Eastern Dayl l ght T ime]* SVR: W -PTOFAX-00318 ' DN I S:2738300 * CSID:301 286 9502 * DURATION (mm- ss):02-05
The radiation sensor of claim 5, wherein said graphene reacts to a local change of electric field in an interaction between applied ionizing radiation on said undoped silicon substrate, by changing a voltage or resistance of said graphene, allowing said ionizing radiation to be sensed.
The radiation sensor of claim 9, wherein said ionizing radiation is gamma radiation, x-ray radiation, charge particle radiation, and heavy ion radiation.
The radiation sensor of claim 5, wherein an electric field is applied between said graphene ribbon channel and said undoped silicon substrate, and ionized 3 PAGE 3 16 * RCVD AT 7 1191 2016 11:20:17 AM [Eastern Daylight Time] * SVR:W-PTOFAX-003 18* DNIS:2738300 ' CSID:301 286 9502 * DURATION (mm-ss):02-05 From:301 286 9502 07/19/2016 10:21 #240 P.004/00 i Application No.: 14/843,697 Attorney Docket No. GSC 17,279-1 charges are attracted to a location directly under said graphene, to enhance sensitivity of measurement of radiation energy deposited in said undoped silicon substrate.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene field effect transistor radiation sensor (GFET-RS)
Materials described outside the worked examples.
graphene
silicon (undoped)
Si
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B shows a side view of a graphene nano-ribbon field effect transistor (GFET) based radiation sensor (RS), according to one embodiment consistent with the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene thermal stability | 4–2800 degC | graphene |
SiO2 dielectric thickness | 90 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,508,885Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B shows a side view of a graphene nano-ribbon field effect transistor (GFET) based radiation sensor (RS), according to one embodiment consistent with the …
FIG. 2B shows gamma radiation responses of the GFET-RS device, post-anneal resistance, according to one embodiment consistent with the present invention. A …
FIG. 3 shows X-ray radiation responses of the GFET-RS device under various exposure conditions, according to one embodiment consistent with the present …
FIG. 4A is a graph showing charged particle radiation responses by the GFET-RS device, for electron radiation, according to one embodiment consistent with the …
FIGS. 5A-5 B are graphs showing Argon heavy ion radiation responses by the GFET-RS device, according to one embodiment consistent with the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A radiation hardened space based satellite in Earth orbit sensor, comprising: a silicon substrate with a silicon oxide layer d ispos ed thereon; a layer of graphene comprising graphene flakes from highly oriented pyrolitic crystals including a one-atomic layer thick exfoliated graphene layer deposited on a silicon substrate. with a silicon dioxide substrate thereon of approximately 90 nm thickness. with metal pads as source and gate disposed on said silicon oxide layer further onto arrays of graphene nano-ribbon channels used in conjunction with undoped substrates enhancing the sensitivity of measurin g enerav of radiation deposited in an absorber with a=3lving an electric field between an electricall y biased substrate electrode and a mranhene channel forming an intense field is around the g raphene nano-ribbons with attracted ionized charges to a location directly under the laver of graphene before the recombination process occurs; and a source contact and a drain contact disposed on said silicon substrate.
The radiation sensor of claim 1, wherein said graphene is made using an exfoliation process.
The radiation sensor of claim 1, wherein said source contact is made from one of a Pd/Au combination and a Ti/Pd/AU combination and said drain contact aro-mado from Pd/Au or=Ti/Pd/Au is made from one of a Pd/Au combination and a Ti/Pd/AU combination.
The radiation sensor of claim 1, wherein said source contact and said drain contact are defined by photo-beam lithography or e-beam lithography during fabrication.
The radiation sensor of claim 1, wherein said graphene is stable in a temperature range from 4 * C-2800 *C.
An integrated circuit package comprising the radiation sensor of claim 1. 4 PAG E 4 16 * RCV D A T 7/191 2016 11:20:17 AM [Eastern Dayl l ght T ime]* SVR: W -PTOFAX-00318 ' DN I S:2738300 * CSID:301 286 9502 * DURATION (mm- ss):02-05
The radiation sensor of claim 5, wherein said graphene reacts to a local change of electric field in an interaction between applied ionizing radiation on said undoped silicon substrate, by changing a voltage or resistance of said graphene, allowing said ionizing radiation to be sensed.
The radiation sensor of claim 9, wherein said ionizing radiation is gamma radiation, x-ray radiation, charge particle radiation, and heavy ion radiation.
The radiation sensor of claim 5, wherein an electric field is applied between said graphene ribbon channel and said undoped silicon substrate, and ionized 3 PAGE 3 16 * RCVD AT 7 1191 2016 11:20:17 AM [Eastern Daylight Time] * SVR:W-PTOFAX-003 18* DNIS:2738300 ' CSID:301 286 9502 * DURATION (mm-ss):02-05 From:301 286 9502 07/19/2016 10:21 #240 P.004/00 i Application No.: 14/843,697 Attorney Docket No. GSC 17,279-1 charges are attracted to a location directly under said graphene, to enhance sensitivity of measurement of radiation energy deposited in said undoped silicon substrate.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene field effect transistor radiation sensor (GFET-RS)
Materials described outside the worked examples.
graphene
silicon (undoped)
Si
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B shows a side view of a graphene nano-ribbon field effect transistor (GFET) based radiation sensor (RS), according to one embodiment consistent with the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene thermal stability | 4–2800 degC | graphene |
SiO2 dielectric thickness | 90 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,508,885Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B shows a side view of a graphene nano-ribbon field effect transistor (GFET) based radiation sensor (RS), according to one embodiment consistent with the …
FIG. 2B shows gamma radiation responses of the GFET-RS device, post-anneal resistance, according to one embodiment consistent with the present invention. A …
FIG. 3 shows X-ray radiation responses of the GFET-RS device under various exposure conditions, according to one embodiment consistent with the present …
FIG. 4A is a graph showing charged particle radiation responses by the GFET-RS device, for electron radiation, according to one embodiment consistent with the …
FIGS. 5A-5 B are graphs showing Argon heavy ion radiation responses by the GFET-RS device, according to one embodiment consistent with the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A radiation hardened space based satellite in Earth orbit sensor, comprising: a silicon substrate with a silicon oxide layer d ispos ed thereon; a layer of graphene comprising graphene flakes from highly oriented pyrolitic crystals including a one-atomic layer thick exfoliated graphene layer deposited on a silicon substrate. with a silicon dioxide substrate thereon of approximately 90 nm thickness. with metal pads as source and gate disposed on said silicon oxide layer further onto arrays of graphene nano-ribbon channels used in conjunction with undoped substrates enhancing the sensitivity of measurin g enerav of radiation deposited in an absorber with a=3lving an electric field between an electricall y biased substrate electrode and a mranhene channel forming an intense field is around the g raphene nano-ribbons with attracted ionized charges to a location directly under the laver of graphene before the recombination process occurs; and a source contact and a drain contact disposed on said silicon substrate.
The radiation sensor of claim 1, wherein said graphene is made using an exfoliation process.
The radiation sensor of claim 1, wherein said source contact is made from one of a Pd/Au combination and a Ti/Pd/AU combination and said drain contact aro-mado from Pd/Au or=Ti/Pd/Au is made from one of a Pd/Au combination and a Ti/Pd/AU combination.
The radiation sensor of claim 1, wherein said source contact and said drain contact are defined by photo-beam lithography or e-beam lithography during fabrication.
The radiation sensor of claim 1, wherein said graphene is stable in a temperature range from 4 * C-2800 *C.
An integrated circuit package comprising the radiation sensor of claim 1. 4 PAG E 4 16 * RCV D A T 7/191 2016 11:20:17 AM [Eastern Dayl l ght T ime]* SVR: W -PTOFAX-00318 ' DN I S:2738300 * CSID:301 286 9502 * DURATION (mm- ss):02-05
The radiation sensor of claim 5, wherein said graphene reacts to a local change of electric field in an interaction between applied ionizing radiation on said undoped silicon substrate, by changing a voltage or resistance of said graphene, allowing said ionizing radiation to be sensed.
The radiation sensor of claim 9, wherein said ionizing radiation is gamma radiation, x-ray radiation, charge particle radiation, and heavy ion radiation.
The radiation sensor of claim 5, wherein an electric field is applied between said graphene ribbon channel and said undoped silicon substrate, and ionized 3 PAGE 3 16 * RCVD AT 7 1191 2016 11:20:17 AM [Eastern Daylight Time] * SVR:W-PTOFAX-003 18* DNIS:2738300 ' CSID:301 286 9502 * DURATION (mm-ss):02-05 From:301 286 9502 07/19/2016 10:21 #240 P.004/00 i Application No.: 14/843,697 Attorney Docket No. GSC 17,279-1 charges are attracted to a location directly under said graphene, to enhance sensitivity of measurement of radiation energy deposited in said undoped silicon substrate.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene field effect transistor radiation sensor (GFET-RS)
Materials described outside the worked examples.
graphene
silicon (undoped)
Si
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B shows a side view of a graphene nano-ribbon field effect transistor (GFET) based radiation sensor (RS), according to one embodiment consistent with the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene thermal stability | 4–2800 degC | graphene |
SiO2 dielectric thickness | 90 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,508,885Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B shows a side view of a graphene nano-ribbon field effect transistor (GFET) based radiation sensor (RS), according to one embodiment consistent with the …
FIG. 2B shows gamma radiation responses of the GFET-RS device, post-anneal resistance, according to one embodiment consistent with the present invention. A …
FIG. 3 shows X-ray radiation responses of the GFET-RS device under various exposure conditions, according to one embodiment consistent with the present …
FIG. 4A is a graph showing charged particle radiation responses by the GFET-RS device, for electron radiation, according to one embodiment consistent with the …
FIGS. 5A-5 B are graphs showing Argon heavy ion radiation responses by the GFET-RS device, according to one embodiment consistent with the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A radiation hardened space based satellite in Earth orbit sensor, comprising: a silicon substrate with a silicon oxide layer d ispos ed thereon; a layer of graphene comprising graphene flakes from highly oriented pyrolitic crystals including a one-atomic layer thick exfoliated graphene layer deposited on a silicon substrate. with a silicon dioxide substrate thereon of approximately 90 nm thickness. with metal pads as source and gate disposed on said silicon oxide layer further onto arrays of graphene nano-ribbon channels used in conjunction with undoped substrates enhancing the sensitivity of measurin g enerav of radiation deposited in an absorber with a=3lving an electric field between an electricall y biased substrate electrode and a mranhene channel forming an intense field is around the g raphene nano-ribbons with attracted ionized charges to a location directly under the laver of graphene before the recombination process occurs; and a source contact and a drain contact disposed on said silicon substrate.
The radiation sensor of claim 1, wherein said graphene is made using an exfoliation process.
The radiation sensor of claim 1, wherein said source contact is made from one of a Pd/Au combination and a Ti/Pd/AU combination and said drain contact aro-mado from Pd/Au or=Ti/Pd/Au is made from one of a Pd/Au combination and a Ti/Pd/AU combination.
The radiation sensor of claim 1, wherein said source contact and said drain contact are defined by photo-beam lithography or e-beam lithography during fabrication.
The radiation sensor of claim 1, wherein said graphene is stable in a temperature range from 4 * C-2800 *C.
An integrated circuit package comprising the radiation sensor of claim 1. 4 PAG E 4 16 * RCV D A T 7/191 2016 11:20:17 AM [Eastern Dayl l ght T ime]* SVR: W -PTOFAX-00318 ' DN I S:2738300 * CSID:301 286 9502 * DURATION (mm- ss):02-05
The radiation sensor of claim 5, wherein said graphene reacts to a local change of electric field in an interaction between applied ionizing radiation on said undoped silicon substrate, by changing a voltage or resistance of said graphene, allowing said ionizing radiation to be sensed.
The radiation sensor of claim 9, wherein said ionizing radiation is gamma radiation, x-ray radiation, charge particle radiation, and heavy ion radiation.
The radiation sensor of claim 5, wherein an electric field is applied between said graphene ribbon channel and said undoped silicon substrate, and ionized 3 PAGE 3 16 * RCVD AT 7 1191 2016 11:20:17 AM [Eastern Daylight Time] * SVR:W-PTOFAX-003 18* DNIS:2738300 ' CSID:301 286 9502 * DURATION (mm-ss):02-05 From:301 286 9502 07/19/2016 10:21 #240 P.004/00 i Application No.: 14/843,697 Attorney Docket No. GSC 17,279-1 charges are attracted to a location directly under said graphene, to enhance sensitivity of measurement of radiation energy deposited in said undoped silicon substrate.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene field effect transistor radiation sensor (GFET-RS)
Materials described outside the worked examples.
graphene
silicon (undoped)
Si
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B shows a side view of a graphene nano-ribbon field effect transistor (GFET) based radiation sensor (RS), according to one embodiment consistent with the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene thermal stability | 4–2800 degC | graphene |
SiO2 dielectric thickness | 90 nm |
Related documents with shared materials, methods, properties, or citations.
silicon dioxide
SiO₂
Pd/Au
Ti/Pd/Au
highly oriented pyrolitic graphite (HOPG)
FIG. 1 B shows a side view of a graphene nano-ribbon field effect transistor (GFET) based radiation sensor (RS), according to one embodiment consistent with the …
FIG. 4A is a graph showing charged particle radiation responses by the GFET-RS device, for electron radiation, according to one embodiment consistent with the …
SiO₂ |
INDUSTRIAL METHOD FOR PREPARING LARGE-SIZED GRAPHENE
silicon dioxide
SiO₂
Pd/Au
Ti/Pd/Au
highly oriented pyrolitic graphite (HOPG)
FIG. 1 B shows a side view of a graphene nano-ribbon field effect transistor (GFET) based radiation sensor (RS), according to one embodiment consistent with the …
FIG. 4A is a graph showing charged particle radiation responses by the GFET-RS device, for electron radiation, according to one embodiment consistent with the …
SiO₂ |
INDUSTRIAL METHOD FOR PREPARING LARGE-SIZED GRAPHENE
silicon dioxide
SiO₂
Pd/Au
Ti/Pd/Au
highly oriented pyrolitic graphite (HOPG)
FIG. 1 B shows a side view of a graphene nano-ribbon field effect transistor (GFET) based radiation sensor (RS), according to one embodiment consistent with the …
FIG. 4A is a graph showing charged particle radiation responses by the GFET-RS device, for electron radiation, according to one embodiment consistent with the …
SiO₂ |
INDUSTRIAL METHOD FOR PREPARING LARGE-SIZED GRAPHENE
silicon dioxide
SiO₂
Pd/Au
Ti/Pd/Au
highly oriented pyrolitic graphite (HOPG)
FIG. 1 B shows a side view of a graphene nano-ribbon field effect transistor (GFET) based radiation sensor (RS), according to one embodiment consistent with the …
FIG. 4A is a graph showing charged particle radiation responses by the GFET-RS device, for electron radiation, according to one embodiment consistent with the …
SiO₂ |