Patent
US 9,214,559GRAPHENE-TRANSFERRING MEMBER, GRAPHENE TRANSFERRER, METHOD OF TRANSFERRING GRAPHENE, AND METHODS OF FABRICATING GRAPHENE DEVICE BY USING THE SAME
Joo-ho LEE
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,214,559Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A through 1 H are cross-sectional views for explaining a method of graphene transferring by using a metal thin film according to an example embodiment; …
FIG. 2 is a plan view of a graphene transferring member having graphene for transferring, according to another example embodiment; [0040]
FIG. 3 is a cross-sectional view taken along line Ill-Ill ' of
FIGS. 4A through 4C are cross-sectional views for explaining a method of fabricating a graphene sensor as a graphene device by using the graphene transferring …
FIGS. 5A through 5 C are cross-sectional views for explaining a method of fabricating a graphene transistor as a graphene device by using the graphene …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(WITHDRA W) A graphene transferring member, comprising: an adhesive member; and a metal thin-film layer pattern and a graphene layer sequentially stacked on the adhesive member, the metal thin-film layer pattern and the graphene layer having a same shape.
(WITHDRA W) The graphene transferring member of claim 1, wherein the adhesive member is one selected from an adhesive tape, glue, polycarbonate, an epoxy resin, a thermal release tape, a water-soluble tape, and a photoresist.
(WITHDRA W) The graphene transferring member of claim 1, wherein the metal thin-film layer pattern is formed of a metal selected from gold (Au), copper (Cu), nickel (Ni), titanium (Ti), iron (Fe), ruthenium (Ru), palladium (Pd) and a combination thereof.
(WITHDRA W) The graphene transferring member of claim 1, wherein the graphene layer is a single layer graphene or a bi-layer graphene.
(OR I GINAL) A method of transferring graphene, the method comprising: sequentially forming a sacrificial layer and a catalyst layer on a substrate; growing a graphene layer on the catalyst layer; forming a metal thin-film layer on the graphene layer; patterning the metal thin-film layer, the graphene layer, and the catalyst layer to form the metal thin-film layer pattern, a graphene layer pattern and a catalyst layer pattern; forming an adhesive layer on the metal thin-film layer; sequentially removing the sacrificial layer and the catalyst layer pattern; and U.S. Application No. 13/659,13 1 Atty. Dkt. No. 2557 SI -001747-US Page 3 of 7 transferring the graphene layer pattern from the adhesive layer onto a transfer-target substrate so that the graphene layer pattern contacts the transfer- target substrate.
The method of claim 5, wherein the adhesive layer is one selected from an adhesive tape, glue, polycarbonate, an epoxy resin, a thermal release tape, a water-soluble tape, and a photoresist.
The method of claim 5, wherein the graphene layer is a single layer graphene or a bi-layer graphene.
The method of claim 5, wherein the metal thin-film layer and the graphene layer are patterned into a same shape.
The method of claim 5, wherein the catalyst layer is formed of a metal selected from nickel (Ni), iron (Fe), cobalt (Co), copper (Cu), platinum (Pt), ruthenium (Ru) and a combination thereof.
The method of claim 5, wherein the metal thin-film layer is formed of a metal selected from Au, Cu, Ni, Ti, Fe, Ru, Pd and a combination thereof.
The method of claim 5, wherein the removing the catalyst layer pattern includes using a galvanic corrosion effect.
The method of claim 5, wherein the removing the catalyst layer includes using a galvanic corrosion effect.
A method of fabricating a graphene device, the method comprising: sequentially forming a sacrificial layer and a catalyst layer on a substrate; growing a graphene layer on the catalyst layer; forming a metal thin-film layer on the graphene layer; patterning the metal thin-film layer, the graphene layer, and the catalyst layer to form the metal thin-film layer pattern, a graphene layer pattern and a catalyst layer pattern; forming an adhesive layer on the metal thin-film layer pattern; U.S. Application No. 13/659,13 1 Atty. Dkt. No. 2557 SI -001747-US Page 4 of 7 sequentially removing the sacrificial layer and the catalyst layer pattern; transferring the graphene layer pattern and the metal thin-film pattern from the adhesive layer onto a transfer-target substrate so that the graphene layer pattern contacts the transfer-target substrate; removing the adhesive layer; and patterning the metal thin-film layer pattern to form electrodes at respective ends of the graphene layer pattern, a portion of the graphene layer pattern between the electrodes being exposed.
The method of claim 12, wherein the adhesive layer is one selected from an adhesive tape, glue, polycarbonate, an epoxy resin, a thermal release tape, a water-soluble tape, and a photoresist.
The method of claim 12, wherein the metal thin-film layer pattern and the graphene layer pattern have a same shape.
The method of claim 12, wherein the catalyst layer is formed of a metal selected from Ni, Fe, Co, Cu, Pt, Ru and a combination thereof.
The method of claim 12, wherein the portion of the graphene layer pattern exposed between the electrodes is a channel of a graphene transistor.
The method of cl a im 12, wherein the graphene layer is a single layer graphene or a bi-layer graphene.
The method of c la im 12, wherein the metal thin-film layer is formed of a metal selected from Au, Cu, Ni, Ti, Fe, Ru, Pd and a combination thereof.
(WITHDRA W) A graphene transferrer, comprising: a sacrificial layer over a substrate; and a catalyst layer pattern, a graphene layer pattern and a metal thin-film layer pattern sequentially formed on the sacrificial layer, the catalyst layer pattern, the graphene layer pattern and the metal thin-film layer pattern having a same shape.
(WITHDRA W) The graphene transferrer of claim 21, wherein the catalyst layer pattern has a thickness of about 100 nm to about 400 nm.
(WITHDRA W) The graphene transferrer of one selected from silicon oxide and silicon nitride. claim 21, wherein the sacrificial layer has a claim 21, wherein the sacrificial layer includes *** END CLA I M LISTING
(WITHDRA W) The graphene transferrer of thickness of about 100 nm to about 300 nm.
Layer stacks claimed or described, ordered top of device to substrate.
graphene transferring member
graphene device (transistor/sensor)
Materials described outside the worked examples.
graphene layer
C
metal thin-film layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 5A through 5 C are cross-sectional views for explaining a method of fabricating a graphene transistor as a graphene device by using the graphene …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
catalyst layer pattern thickness | 100–400 nm | catalyst layer |
sacrificial layer thickness | 100–300 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,214,559Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A through 1 H are cross-sectional views for explaining a method of graphene transferring by using a metal thin film according to an example embodiment; …
FIG. 2 is a plan view of a graphene transferring member having graphene for transferring, according to another example embodiment; [0040]
FIG. 3 is a cross-sectional view taken along line Ill-Ill ' of
FIGS. 4A through 4C are cross-sectional views for explaining a method of fabricating a graphene sensor as a graphene device by using the graphene transferring …
FIGS. 5A through 5 C are cross-sectional views for explaining a method of fabricating a graphene transistor as a graphene device by using the graphene …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(WITHDRA W) A graphene transferring member, comprising: an adhesive member; and a metal thin-film layer pattern and a graphene layer sequentially stacked on the adhesive member, the metal thin-film layer pattern and the graphene layer having a same shape.
(WITHDRA W) The graphene transferring member of claim 1, wherein the adhesive member is one selected from an adhesive tape, glue, polycarbonate, an epoxy resin, a thermal release tape, a water-soluble tape, and a photoresist.
(WITHDRA W) The graphene transferring member of claim 1, wherein the metal thin-film layer pattern is formed of a metal selected from gold (Au), copper (Cu), nickel (Ni), titanium (Ti), iron (Fe), ruthenium (Ru), palladium (Pd) and a combination thereof.
(WITHDRA W) The graphene transferring member of claim 1, wherein the graphene layer is a single layer graphene or a bi-layer graphene.
(OR I GINAL) A method of transferring graphene, the method comprising: sequentially forming a sacrificial layer and a catalyst layer on a substrate; growing a graphene layer on the catalyst layer; forming a metal thin-film layer on the graphene layer; patterning the metal thin-film layer, the graphene layer, and the catalyst layer to form the metal thin-film layer pattern, a graphene layer pattern and a catalyst layer pattern; forming an adhesive layer on the metal thin-film layer; sequentially removing the sacrificial layer and the catalyst layer pattern; and U.S. Application No. 13/659,13 1 Atty. Dkt. No. 2557 SI -001747-US Page 3 of 7 transferring the graphene layer pattern from the adhesive layer onto a transfer-target substrate so that the graphene layer pattern contacts the transfer- target substrate.
The method of claim 5, wherein the adhesive layer is one selected from an adhesive tape, glue, polycarbonate, an epoxy resin, a thermal release tape, a water-soluble tape, and a photoresist.
The method of claim 5, wherein the graphene layer is a single layer graphene or a bi-layer graphene.
The method of claim 5, wherein the metal thin-film layer and the graphene layer are patterned into a same shape.
The method of claim 5, wherein the catalyst layer is formed of a metal selected from nickel (Ni), iron (Fe), cobalt (Co), copper (Cu), platinum (Pt), ruthenium (Ru) and a combination thereof.
The method of claim 5, wherein the metal thin-film layer is formed of a metal selected from Au, Cu, Ni, Ti, Fe, Ru, Pd and a combination thereof.
The method of claim 5, wherein the removing the catalyst layer pattern includes using a galvanic corrosion effect.
The method of claim 5, wherein the removing the catalyst layer includes using a galvanic corrosion effect.
A method of fabricating a graphene device, the method comprising: sequentially forming a sacrificial layer and a catalyst layer on a substrate; growing a graphene layer on the catalyst layer; forming a metal thin-film layer on the graphene layer; patterning the metal thin-film layer, the graphene layer, and the catalyst layer to form the metal thin-film layer pattern, a graphene layer pattern and a catalyst layer pattern; forming an adhesive layer on the metal thin-film layer pattern; U.S. Application No. 13/659,13 1 Atty. Dkt. No. 2557 SI -001747-US Page 4 of 7 sequentially removing the sacrificial layer and the catalyst layer pattern; transferring the graphene layer pattern and the metal thin-film pattern from the adhesive layer onto a transfer-target substrate so that the graphene layer pattern contacts the transfer-target substrate; removing the adhesive layer; and patterning the metal thin-film layer pattern to form electrodes at respective ends of the graphene layer pattern, a portion of the graphene layer pattern between the electrodes being exposed.
The method of claim 12, wherein the adhesive layer is one selected from an adhesive tape, glue, polycarbonate, an epoxy resin, a thermal release tape, a water-soluble tape, and a photoresist.
The method of claim 12, wherein the metal thin-film layer pattern and the graphene layer pattern have a same shape.
The method of claim 12, wherein the catalyst layer is formed of a metal selected from Ni, Fe, Co, Cu, Pt, Ru and a combination thereof.
The method of claim 12, wherein the portion of the graphene layer pattern exposed between the electrodes is a channel of a graphene transistor.
The method of cl a im 12, wherein the graphene layer is a single layer graphene or a bi-layer graphene.
The method of c la im 12, wherein the metal thin-film layer is formed of a metal selected from Au, Cu, Ni, Ti, Fe, Ru, Pd and a combination thereof.
(WITHDRA W) A graphene transferrer, comprising: a sacrificial layer over a substrate; and a catalyst layer pattern, a graphene layer pattern and a metal thin-film layer pattern sequentially formed on the sacrificial layer, the catalyst layer pattern, the graphene layer pattern and the metal thin-film layer pattern having a same shape.
(WITHDRA W) The graphene transferrer of claim 21, wherein the catalyst layer pattern has a thickness of about 100 nm to about 400 nm.
(WITHDRA W) The graphene transferrer of one selected from silicon oxide and silicon nitride. claim 21, wherein the sacrificial layer has a claim 21, wherein the sacrificial layer includes *** END CLA I M LISTING
(WITHDRA W) The graphene transferrer of thickness of about 100 nm to about 300 nm.
Layer stacks claimed or described, ordered top of device to substrate.
graphene transferring member
graphene device (transistor/sensor)
Materials described outside the worked examples.
graphene layer
C
metal thin-film layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 5A through 5 C are cross-sectional views for explaining a method of fabricating a graphene transistor as a graphene device by using the graphene …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
catalyst layer pattern thickness | 100–400 nm | catalyst layer |
sacrificial layer thickness | 100–300 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,214,559Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A through 1 H are cross-sectional views for explaining a method of graphene transferring by using a metal thin film according to an example embodiment; …
FIG. 2 is a plan view of a graphene transferring member having graphene for transferring, according to another example embodiment; [0040]
FIG. 3 is a cross-sectional view taken along line Ill-Ill ' of
FIGS. 4A through 4C are cross-sectional views for explaining a method of fabricating a graphene sensor as a graphene device by using the graphene transferring …
FIGS. 5A through 5 C are cross-sectional views for explaining a method of fabricating a graphene transistor as a graphene device by using the graphene …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(WITHDRA W) A graphene transferring member, comprising: an adhesive member; and a metal thin-film layer pattern and a graphene layer sequentially stacked on the adhesive member, the metal thin-film layer pattern and the graphene layer having a same shape.
(WITHDRA W) The graphene transferring member of claim 1, wherein the adhesive member is one selected from an adhesive tape, glue, polycarbonate, an epoxy resin, a thermal release tape, a water-soluble tape, and a photoresist.
(WITHDRA W) The graphene transferring member of claim 1, wherein the metal thin-film layer pattern is formed of a metal selected from gold (Au), copper (Cu), nickel (Ni), titanium (Ti), iron (Fe), ruthenium (Ru), palladium (Pd) and a combination thereof.
(WITHDRA W) The graphene transferring member of claim 1, wherein the graphene layer is a single layer graphene or a bi-layer graphene.
(OR I GINAL) A method of transferring graphene, the method comprising: sequentially forming a sacrificial layer and a catalyst layer on a substrate; growing a graphene layer on the catalyst layer; forming a metal thin-film layer on the graphene layer; patterning the metal thin-film layer, the graphene layer, and the catalyst layer to form the metal thin-film layer pattern, a graphene layer pattern and a catalyst layer pattern; forming an adhesive layer on the metal thin-film layer; sequentially removing the sacrificial layer and the catalyst layer pattern; and U.S. Application No. 13/659,13 1 Atty. Dkt. No. 2557 SI -001747-US Page 3 of 7 transferring the graphene layer pattern from the adhesive layer onto a transfer-target substrate so that the graphene layer pattern contacts the transfer- target substrate.
The method of claim 5, wherein the adhesive layer is one selected from an adhesive tape, glue, polycarbonate, an epoxy resin, a thermal release tape, a water-soluble tape, and a photoresist.
The method of claim 5, wherein the graphene layer is a single layer graphene or a bi-layer graphene.
The method of claim 5, wherein the metal thin-film layer and the graphene layer are patterned into a same shape.
The method of claim 5, wherein the catalyst layer is formed of a metal selected from nickel (Ni), iron (Fe), cobalt (Co), copper (Cu), platinum (Pt), ruthenium (Ru) and a combination thereof.
The method of claim 5, wherein the metal thin-film layer is formed of a metal selected from Au, Cu, Ni, Ti, Fe, Ru, Pd and a combination thereof.
The method of claim 5, wherein the removing the catalyst layer pattern includes using a galvanic corrosion effect.
The method of claim 5, wherein the removing the catalyst layer includes using a galvanic corrosion effect.
A method of fabricating a graphene device, the method comprising: sequentially forming a sacrificial layer and a catalyst layer on a substrate; growing a graphene layer on the catalyst layer; forming a metal thin-film layer on the graphene layer; patterning the metal thin-film layer, the graphene layer, and the catalyst layer to form the metal thin-film layer pattern, a graphene layer pattern and a catalyst layer pattern; forming an adhesive layer on the metal thin-film layer pattern; U.S. Application No. 13/659,13 1 Atty. Dkt. No. 2557 SI -001747-US Page 4 of 7 sequentially removing the sacrificial layer and the catalyst layer pattern; transferring the graphene layer pattern and the metal thin-film pattern from the adhesive layer onto a transfer-target substrate so that the graphene layer pattern contacts the transfer-target substrate; removing the adhesive layer; and patterning the metal thin-film layer pattern to form electrodes at respective ends of the graphene layer pattern, a portion of the graphene layer pattern between the electrodes being exposed.
The method of claim 12, wherein the adhesive layer is one selected from an adhesive tape, glue, polycarbonate, an epoxy resin, a thermal release tape, a water-soluble tape, and a photoresist.
The method of claim 12, wherein the metal thin-film layer pattern and the graphene layer pattern have a same shape.
The method of claim 12, wherein the catalyst layer is formed of a metal selected from Ni, Fe, Co, Cu, Pt, Ru and a combination thereof.
The method of claim 12, wherein the portion of the graphene layer pattern exposed between the electrodes is a channel of a graphene transistor.
The method of cl a im 12, wherein the graphene layer is a single layer graphene or a bi-layer graphene.
The method of c la im 12, wherein the metal thin-film layer is formed of a metal selected from Au, Cu, Ni, Ti, Fe, Ru, Pd and a combination thereof.
(WITHDRA W) A graphene transferrer, comprising: a sacrificial layer over a substrate; and a catalyst layer pattern, a graphene layer pattern and a metal thin-film layer pattern sequentially formed on the sacrificial layer, the catalyst layer pattern, the graphene layer pattern and the metal thin-film layer pattern having a same shape.
(WITHDRA W) The graphene transferrer of claim 21, wherein the catalyst layer pattern has a thickness of about 100 nm to about 400 nm.
(WITHDRA W) The graphene transferrer of one selected from silicon oxide and silicon nitride. claim 21, wherein the sacrificial layer has a claim 21, wherein the sacrificial layer includes *** END CLA I M LISTING
(WITHDRA W) The graphene transferrer of thickness of about 100 nm to about 300 nm.
Layer stacks claimed or described, ordered top of device to substrate.
graphene transferring member
graphene device (transistor/sensor)
Materials described outside the worked examples.
graphene layer
C
metal thin-film layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 5A through 5 C are cross-sectional views for explaining a method of fabricating a graphene transistor as a graphene device by using the graphene …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
catalyst layer pattern thickness | 100–400 nm | catalyst layer |
sacrificial layer thickness | 100–300 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,214,559Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A through 1 H are cross-sectional views for explaining a method of graphene transferring by using a metal thin film according to an example embodiment; …
FIG. 2 is a plan view of a graphene transferring member having graphene for transferring, according to another example embodiment; [0040]
FIG. 3 is a cross-sectional view taken along line Ill-Ill ' of
FIGS. 4A through 4C are cross-sectional views for explaining a method of fabricating a graphene sensor as a graphene device by using the graphene transferring …
FIGS. 5A through 5 C are cross-sectional views for explaining a method of fabricating a graphene transistor as a graphene device by using the graphene …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(WITHDRA W) A graphene transferring member, comprising: an adhesive member; and a metal thin-film layer pattern and a graphene layer sequentially stacked on the adhesive member, the metal thin-film layer pattern and the graphene layer having a same shape.
(WITHDRA W) The graphene transferring member of claim 1, wherein the adhesive member is one selected from an adhesive tape, glue, polycarbonate, an epoxy resin, a thermal release tape, a water-soluble tape, and a photoresist.
(WITHDRA W) The graphene transferring member of claim 1, wherein the metal thin-film layer pattern is formed of a metal selected from gold (Au), copper (Cu), nickel (Ni), titanium (Ti), iron (Fe), ruthenium (Ru), palladium (Pd) and a combination thereof.
(WITHDRA W) The graphene transferring member of claim 1, wherein the graphene layer is a single layer graphene or a bi-layer graphene.
(OR I GINAL) A method of transferring graphene, the method comprising: sequentially forming a sacrificial layer and a catalyst layer on a substrate; growing a graphene layer on the catalyst layer; forming a metal thin-film layer on the graphene layer; patterning the metal thin-film layer, the graphene layer, and the catalyst layer to form the metal thin-film layer pattern, a graphene layer pattern and a catalyst layer pattern; forming an adhesive layer on the metal thin-film layer; sequentially removing the sacrificial layer and the catalyst layer pattern; and U.S. Application No. 13/659,13 1 Atty. Dkt. No. 2557 SI -001747-US Page 3 of 7 transferring the graphene layer pattern from the adhesive layer onto a transfer-target substrate so that the graphene layer pattern contacts the transfer- target substrate.
The method of claim 5, wherein the adhesive layer is one selected from an adhesive tape, glue, polycarbonate, an epoxy resin, a thermal release tape, a water-soluble tape, and a photoresist.
The method of claim 5, wherein the graphene layer is a single layer graphene or a bi-layer graphene.
The method of claim 5, wherein the metal thin-film layer and the graphene layer are patterned into a same shape.
The method of claim 5, wherein the catalyst layer is formed of a metal selected from nickel (Ni), iron (Fe), cobalt (Co), copper (Cu), platinum (Pt), ruthenium (Ru) and a combination thereof.
The method of claim 5, wherein the metal thin-film layer is formed of a metal selected from Au, Cu, Ni, Ti, Fe, Ru, Pd and a combination thereof.
The method of claim 5, wherein the removing the catalyst layer pattern includes using a galvanic corrosion effect.
The method of claim 5, wherein the removing the catalyst layer includes using a galvanic corrosion effect.
A method of fabricating a graphene device, the method comprising: sequentially forming a sacrificial layer and a catalyst layer on a substrate; growing a graphene layer on the catalyst layer; forming a metal thin-film layer on the graphene layer; patterning the metal thin-film layer, the graphene layer, and the catalyst layer to form the metal thin-film layer pattern, a graphene layer pattern and a catalyst layer pattern; forming an adhesive layer on the metal thin-film layer pattern; U.S. Application No. 13/659,13 1 Atty. Dkt. No. 2557 SI -001747-US Page 4 of 7 sequentially removing the sacrificial layer and the catalyst layer pattern; transferring the graphene layer pattern and the metal thin-film pattern from the adhesive layer onto a transfer-target substrate so that the graphene layer pattern contacts the transfer-target substrate; removing the adhesive layer; and patterning the metal thin-film layer pattern to form electrodes at respective ends of the graphene layer pattern, a portion of the graphene layer pattern between the electrodes being exposed.
The method of claim 12, wherein the adhesive layer is one selected from an adhesive tape, glue, polycarbonate, an epoxy resin, a thermal release tape, a water-soluble tape, and a photoresist.
The method of claim 12, wherein the metal thin-film layer pattern and the graphene layer pattern have a same shape.
The method of claim 12, wherein the catalyst layer is formed of a metal selected from Ni, Fe, Co, Cu, Pt, Ru and a combination thereof.
The method of claim 12, wherein the portion of the graphene layer pattern exposed between the electrodes is a channel of a graphene transistor.
The method of cl a im 12, wherein the graphene layer is a single layer graphene or a bi-layer graphene.
The method of c la im 12, wherein the metal thin-film layer is formed of a metal selected from Au, Cu, Ni, Ti, Fe, Ru, Pd and a combination thereof.
(WITHDRA W) A graphene transferrer, comprising: a sacrificial layer over a substrate; and a catalyst layer pattern, a graphene layer pattern and a metal thin-film layer pattern sequentially formed on the sacrificial layer, the catalyst layer pattern, the graphene layer pattern and the metal thin-film layer pattern having a same shape.
(WITHDRA W) The graphene transferrer of claim 21, wherein the catalyst layer pattern has a thickness of about 100 nm to about 400 nm.
(WITHDRA W) The graphene transferrer of one selected from silicon oxide and silicon nitride. claim 21, wherein the sacrificial layer has a claim 21, wherein the sacrificial layer includes *** END CLA I M LISTING
(WITHDRA W) The graphene transferrer of thickness of about 100 nm to about 300 nm.
Layer stacks claimed or described, ordered top of device to substrate.
graphene transferring member
graphene device (transistor/sensor)
Materials described outside the worked examples.
graphene layer
C
metal thin-film layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 5A through 5 C are cross-sectional views for explaining a method of fabricating a graphene transistor as a graphene device by using the graphene …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
catalyst layer pattern thickness | 100–400 nm | catalyst layer |
sacrificial layer thickness | 100–300 nm |
Related documents with shared materials, methods, properties, or citations.
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