Patent
US 9,678,036GRAPHENE-BASED GAS AND BIO SENSOR WITH HIGH SENSITIVITY AND SELECTIVITY
Alexander A. BALANDIN
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,678,036Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows scanning electron microscopy images of back-gated graphene devices.
Figure 2 shows transfer current-voltage characteristic of a typical back- gated graphene transistor used for the gas sensing tests, and wherein the arrows indicate the direction of the gate voltage sweep, and the inset shows an optical microscopy image of the graphene transistor with the top metal …
Figure 3 shows noise spectra of single layer graphene (SLG) transistors measured in open air and under the exposure to acetonitrile and tetrahydrofuran vapors, wherein the gate bias is V G=O V with the source-drain voltage is V o=1 00 mV, and the inset shows the resistance response of the graphene …
Figure 4 shows noise spectral density S;//2 multiplied by frequency f versus frequency f for the device in open air and under the influence of different vapors, wherein different vapors induce noise with different characteristic frequencies f c and 3 PATENT Attorney Docket No. 0071220-000143 the …
Figure 5 shows noise spectral density S;/1 2 multiplied by frequency f versus frequency f for three different single-layer-graphene transistors exposed to acetonitrile vapor, and wherein the excellent reproducibility of the noise response of the graphene devices showing the same frequency f e for …
Figure 6 shows schematic of a top view and a side view of the graphene sensor.
Figure 7 shows a schematic of the operation principle of the graphene sensor for vapor, gas and biological agents showing the biasing scheme (top panel) and electrical circuit for the low-frequency noise spectrum input, used as an additional sensing parameter (bottom panel).
Figure 8 shows a photo of the equipment used for testing the prototype graphene sensor.
Figure 9 shows an optical microscopy image of the prototype graphene sensor.
Figure 10 shows a scanning electron microscopy image of the prototype graphene sensor array.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene sensor for selective sensing of vapors, gases and biological agents, the graphene sensor comprising: a substrate; a dielectric substrate on an upper layer of the substrate; a layer of graphene on an upper layer of the dielectric substrate; a source and drain contact on an upper surface of the layer of graphene; a pre-amplifier configured to amplify current fluctuations; and a low-pass and/or a high-pass filter configured to pass the amplified current fluctuations for analyzation.
The graphene sensor of claim 1, wherein the layer of graphene is single layer graphene (SLG).
The graphene sensor of claim 1, wherein the layer of graphene is a bilayer graphene (BLG).
The graphene sensor of claim 1, wherein the substrate is a p- typed highly-doped Si wafer.
The graphene sensor of claim 1, wherein the dielectric substrate is 300-nm thermally grown SiO 2.
The graphene sensor of claim 1, wherein the source and drain contact are Cr/Au.
The graphene sensor of claim 1, wherein the source and drain contact are Ti/Au.
The graphene sensor of claim 1, comprising: a pair of Cr/Au contact pads.
The graphene sensor of claim 1, comprising: a signal analyzer to measure a noise power spectrum.
The graphene sensor of claim 1, comprising: an electrical circuit for a low frequency noise spectrum input.
The graphene sensor of claim 1, wherein the low- pass and/or the high-pass filter are configured to pass frequencies from 0.03 Hz to 100 KHz.
canceled
A graphene sensor for selective sensing of vapors, gases and biological agents, the graphene sensor comprising: a substrate; a dielectric substrate on an upper layer of the substrate; one or more ribbons of graphene on an upper layer of the dielectric substrate; a metal electrode acting as a source and drain contact; a pre-amplifier configured to amplify current fluctuations; and a low-pass and/or a high-pass filter configured to pass the amplified current fluctuations for analyzation.
The graphene sensor of claim 12, wherein the one or more graphene ribbons comprise a plurality of graphene ribbons.
The graphene sensor of claim 12, comprising: a signal analyzer to measure a noise power spectrum.
A method for selective detection of vapors, gases and biological objects with low frequency input as a sensing parameter using a graphene device, the method comprising: exposing the graphene device to at least one vapor, gas, and/or biological object, the graphene device comprising a substrate, a dielectric substrate on an upper layer of the substrate, a layer of graphene on an upper layer of the dielectric substrate, and a source and drain contact on an upper surface of the layer of graphene, a pre-amplifier configured to amplify current fluctuations, and a low-pass and/or a high-pass filter configured to pass the amplified current fluctuations for analyzation; and measuring a change in a noise spectra of the amplified current fluctuations of the graphene device.
The method of claim 16, comprising: measuring the change in the noise spectra of the graphene device with a signal analyzer.
A method for selective detection of vapors, gases and biological objects with low frequency input as a sensing parameter using a graphene device, the method comprising: exposing the graphene device to at least one vapor, gas, and/or biological object, the graphene device comprising a substrate, a dielectric substrate on an upper layer of the substrate, one or more ribbons of graphene on an upper layer of the dielectric substrate, a metal electrode acting as a source and drain contact, a pre-amplifier configured to amplify current fluctuations, and a low-pass and/or a high-pass filter configured to pass the amplified current fluctuations for analyzation; and Attorney Docket No. 0071220-000143 Application No. 14/209,620 Page 6 measuring a change in a noise spectra of the amplified current fluctuations of the graphene device.
The method of claim 17, comprising: measuring the change in the noise spectra of the graphene device with a signal analyzer.
Layer stacks claimed or described, ordered top of device to substrate.
back-gated graphene transistor/graphene sensor (layer)
graphene ribbon sensor
Materials described outside the worked examples.
graphene
C
p-type highly-doped Si wafer
Si
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1–10 K | — |
Voltage |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,678,036Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows scanning electron microscopy images of back-gated graphene devices.
Figure 2 shows transfer current-voltage characteristic of a typical back- gated graphene transistor used for the gas sensing tests, and wherein the arrows indicate the direction of the gate voltage sweep, and the inset shows an optical microscopy image of the graphene transistor with the top metal …
Figure 3 shows noise spectra of single layer graphene (SLG) transistors measured in open air and under the exposure to acetonitrile and tetrahydrofuran vapors, wherein the gate bias is V G=O V with the source-drain voltage is V o=1 00 mV, and the inset shows the resistance response of the graphene …
Figure 4 shows noise spectral density S;//2 multiplied by frequency f versus frequency f for the device in open air and under the influence of different vapors, wherein different vapors induce noise with different characteristic frequencies f c and 3 PATENT Attorney Docket No. 0071220-000143 the …
Figure 5 shows noise spectral density S;/1 2 multiplied by frequency f versus frequency f for three different single-layer-graphene transistors exposed to acetonitrile vapor, and wherein the excellent reproducibility of the noise response of the graphene devices showing the same frequency f e for …
Figure 6 shows schematic of a top view and a side view of the graphene sensor.
Figure 7 shows a schematic of the operation principle of the graphene sensor for vapor, gas and biological agents showing the biasing scheme (top panel) and electrical circuit for the low-frequency noise spectrum input, used as an additional sensing parameter (bottom panel).
Figure 8 shows a photo of the equipment used for testing the prototype graphene sensor.
Figure 9 shows an optical microscopy image of the prototype graphene sensor.
Figure 10 shows a scanning electron microscopy image of the prototype graphene sensor array.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene sensor for selective sensing of vapors, gases and biological agents, the graphene sensor comprising: a substrate; a dielectric substrate on an upper layer of the substrate; a layer of graphene on an upper layer of the dielectric substrate; a source and drain contact on an upper surface of the layer of graphene; a pre-amplifier configured to amplify current fluctuations; and a low-pass and/or a high-pass filter configured to pass the amplified current fluctuations for analyzation.
The graphene sensor of claim 1, wherein the layer of graphene is single layer graphene (SLG).
The graphene sensor of claim 1, wherein the layer of graphene is a bilayer graphene (BLG).
The graphene sensor of claim 1, wherein the substrate is a p- typed highly-doped Si wafer.
The graphene sensor of claim 1, wherein the dielectric substrate is 300-nm thermally grown SiO 2.
The graphene sensor of claim 1, wherein the source and drain contact are Cr/Au.
The graphene sensor of claim 1, wherein the source and drain contact are Ti/Au.
The graphene sensor of claim 1, comprising: a pair of Cr/Au contact pads.
The graphene sensor of claim 1, comprising: a signal analyzer to measure a noise power spectrum.
The graphene sensor of claim 1, comprising: an electrical circuit for a low frequency noise spectrum input.
The graphene sensor of claim 1, wherein the low- pass and/or the high-pass filter are configured to pass frequencies from 0.03 Hz to 100 KHz.
canceled
A graphene sensor for selective sensing of vapors, gases and biological agents, the graphene sensor comprising: a substrate; a dielectric substrate on an upper layer of the substrate; one or more ribbons of graphene on an upper layer of the dielectric substrate; a metal electrode acting as a source and drain contact; a pre-amplifier configured to amplify current fluctuations; and a low-pass and/or a high-pass filter configured to pass the amplified current fluctuations for analyzation.
The graphene sensor of claim 12, wherein the one or more graphene ribbons comprise a plurality of graphene ribbons.
The graphene sensor of claim 12, comprising: a signal analyzer to measure a noise power spectrum.
A method for selective detection of vapors, gases and biological objects with low frequency input as a sensing parameter using a graphene device, the method comprising: exposing the graphene device to at least one vapor, gas, and/or biological object, the graphene device comprising a substrate, a dielectric substrate on an upper layer of the substrate, a layer of graphene on an upper layer of the dielectric substrate, and a source and drain contact on an upper surface of the layer of graphene, a pre-amplifier configured to amplify current fluctuations, and a low-pass and/or a high-pass filter configured to pass the amplified current fluctuations for analyzation; and measuring a change in a noise spectra of the amplified current fluctuations of the graphene device.
The method of claim 16, comprising: measuring the change in the noise spectra of the graphene device with a signal analyzer.
A method for selective detection of vapors, gases and biological objects with low frequency input as a sensing parameter using a graphene device, the method comprising: exposing the graphene device to at least one vapor, gas, and/or biological object, the graphene device comprising a substrate, a dielectric substrate on an upper layer of the substrate, one or more ribbons of graphene on an upper layer of the dielectric substrate, a metal electrode acting as a source and drain contact, a pre-amplifier configured to amplify current fluctuations, and a low-pass and/or a high-pass filter configured to pass the amplified current fluctuations for analyzation; and Attorney Docket No. 0071220-000143 Application No. 14/209,620 Page 6 measuring a change in a noise spectra of the amplified current fluctuations of the graphene device.
The method of claim 17, comprising: measuring the change in the noise spectra of the graphene device with a signal analyzer.
Layer stacks claimed or described, ordered top of device to substrate.
back-gated graphene transistor/graphene sensor (layer)
graphene ribbon sensor
Materials described outside the worked examples.
graphene
C
p-type highly-doped Si wafer
Si
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1–10 K | — |
Voltage |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,678,036Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows scanning electron microscopy images of back-gated graphene devices.
Figure 2 shows transfer current-voltage characteristic of a typical back- gated graphene transistor used for the gas sensing tests, and wherein the arrows indicate the direction of the gate voltage sweep, and the inset shows an optical microscopy image of the graphene transistor with the top metal …
Figure 3 shows noise spectra of single layer graphene (SLG) transistors measured in open air and under the exposure to acetonitrile and tetrahydrofuran vapors, wherein the gate bias is V G=O V with the source-drain voltage is V o=1 00 mV, and the inset shows the resistance response of the graphene …
Figure 4 shows noise spectral density S;//2 multiplied by frequency f versus frequency f for the device in open air and under the influence of different vapors, wherein different vapors induce noise with different characteristic frequencies f c and 3 PATENT Attorney Docket No. 0071220-000143 the …
Figure 5 shows noise spectral density S;/1 2 multiplied by frequency f versus frequency f for three different single-layer-graphene transistors exposed to acetonitrile vapor, and wherein the excellent reproducibility of the noise response of the graphene devices showing the same frequency f e for …
Figure 6 shows schematic of a top view and a side view of the graphene sensor.
Figure 7 shows a schematic of the operation principle of the graphene sensor for vapor, gas and biological agents showing the biasing scheme (top panel) and electrical circuit for the low-frequency noise spectrum input, used as an additional sensing parameter (bottom panel).
Figure 8 shows a photo of the equipment used for testing the prototype graphene sensor.
Figure 9 shows an optical microscopy image of the prototype graphene sensor.
Figure 10 shows a scanning electron microscopy image of the prototype graphene sensor array.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene sensor for selective sensing of vapors, gases and biological agents, the graphene sensor comprising: a substrate; a dielectric substrate on an upper layer of the substrate; a layer of graphene on an upper layer of the dielectric substrate; a source and drain contact on an upper surface of the layer of graphene; a pre-amplifier configured to amplify current fluctuations; and a low-pass and/or a high-pass filter configured to pass the amplified current fluctuations for analyzation.
The graphene sensor of claim 1, wherein the layer of graphene is single layer graphene (SLG).
The graphene sensor of claim 1, wherein the layer of graphene is a bilayer graphene (BLG).
The graphene sensor of claim 1, wherein the substrate is a p- typed highly-doped Si wafer.
The graphene sensor of claim 1, wherein the dielectric substrate is 300-nm thermally grown SiO 2.
The graphene sensor of claim 1, wherein the source and drain contact are Cr/Au.
The graphene sensor of claim 1, wherein the source and drain contact are Ti/Au.
The graphene sensor of claim 1, comprising: a pair of Cr/Au contact pads.
The graphene sensor of claim 1, comprising: a signal analyzer to measure a noise power spectrum.
The graphene sensor of claim 1, comprising: an electrical circuit for a low frequency noise spectrum input.
The graphene sensor of claim 1, wherein the low- pass and/or the high-pass filter are configured to pass frequencies from 0.03 Hz to 100 KHz.
canceled
A graphene sensor for selective sensing of vapors, gases and biological agents, the graphene sensor comprising: a substrate; a dielectric substrate on an upper layer of the substrate; one or more ribbons of graphene on an upper layer of the dielectric substrate; a metal electrode acting as a source and drain contact; a pre-amplifier configured to amplify current fluctuations; and a low-pass and/or a high-pass filter configured to pass the amplified current fluctuations for analyzation.
The graphene sensor of claim 12, wherein the one or more graphene ribbons comprise a plurality of graphene ribbons.
The graphene sensor of claim 12, comprising: a signal analyzer to measure a noise power spectrum.
A method for selective detection of vapors, gases and biological objects with low frequency input as a sensing parameter using a graphene device, the method comprising: exposing the graphene device to at least one vapor, gas, and/or biological object, the graphene device comprising a substrate, a dielectric substrate on an upper layer of the substrate, a layer of graphene on an upper layer of the dielectric substrate, and a source and drain contact on an upper surface of the layer of graphene, a pre-amplifier configured to amplify current fluctuations, and a low-pass and/or a high-pass filter configured to pass the amplified current fluctuations for analyzation; and measuring a change in a noise spectra of the amplified current fluctuations of the graphene device.
The method of claim 16, comprising: measuring the change in the noise spectra of the graphene device with a signal analyzer.
A method for selective detection of vapors, gases and biological objects with low frequency input as a sensing parameter using a graphene device, the method comprising: exposing the graphene device to at least one vapor, gas, and/or biological object, the graphene device comprising a substrate, a dielectric substrate on an upper layer of the substrate, one or more ribbons of graphene on an upper layer of the dielectric substrate, a metal electrode acting as a source and drain contact, a pre-amplifier configured to amplify current fluctuations, and a low-pass and/or a high-pass filter configured to pass the amplified current fluctuations for analyzation; and Attorney Docket No. 0071220-000143 Application No. 14/209,620 Page 6 measuring a change in a noise spectra of the amplified current fluctuations of the graphene device.
The method of claim 17, comprising: measuring the change in the noise spectra of the graphene device with a signal analyzer.
Layer stacks claimed or described, ordered top of device to substrate.
back-gated graphene transistor/graphene sensor (layer)
graphene ribbon sensor
Materials described outside the worked examples.
graphene
C
p-type highly-doped Si wafer
Si
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1–10 K | — |
Voltage |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,678,036Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows scanning electron microscopy images of back-gated graphene devices.
Figure 2 shows transfer current-voltage characteristic of a typical back- gated graphene transistor used for the gas sensing tests, and wherein the arrows indicate the direction of the gate voltage sweep, and the inset shows an optical microscopy image of the graphene transistor with the top metal …
Figure 3 shows noise spectra of single layer graphene (SLG) transistors measured in open air and under the exposure to acetonitrile and tetrahydrofuran vapors, wherein the gate bias is V G=O V with the source-drain voltage is V o=1 00 mV, and the inset shows the resistance response of the graphene …
Figure 4 shows noise spectral density S;//2 multiplied by frequency f versus frequency f for the device in open air and under the influence of different vapors, wherein different vapors induce noise with different characteristic frequencies f c and 3 PATENT Attorney Docket No. 0071220-000143 the …
Figure 5 shows noise spectral density S;/1 2 multiplied by frequency f versus frequency f for three different single-layer-graphene transistors exposed to acetonitrile vapor, and wherein the excellent reproducibility of the noise response of the graphene devices showing the same frequency f e for …
Figure 6 shows schematic of a top view and a side view of the graphene sensor.
Figure 7 shows a schematic of the operation principle of the graphene sensor for vapor, gas and biological agents showing the biasing scheme (top panel) and electrical circuit for the low-frequency noise spectrum input, used as an additional sensing parameter (bottom panel).
Figure 8 shows a photo of the equipment used for testing the prototype graphene sensor.
Figure 9 shows an optical microscopy image of the prototype graphene sensor.
Figure 10 shows a scanning electron microscopy image of the prototype graphene sensor array.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene sensor for selective sensing of vapors, gases and biological agents, the graphene sensor comprising: a substrate; a dielectric substrate on an upper layer of the substrate; a layer of graphene on an upper layer of the dielectric substrate; a source and drain contact on an upper surface of the layer of graphene; a pre-amplifier configured to amplify current fluctuations; and a low-pass and/or a high-pass filter configured to pass the amplified current fluctuations for analyzation.
The graphene sensor of claim 1, wherein the layer of graphene is single layer graphene (SLG).
The graphene sensor of claim 1, wherein the layer of graphene is a bilayer graphene (BLG).
The graphene sensor of claim 1, wherein the substrate is a p- typed highly-doped Si wafer.
The graphene sensor of claim 1, wherein the dielectric substrate is 300-nm thermally grown SiO 2.
The graphene sensor of claim 1, wherein the source and drain contact are Cr/Au.
The graphene sensor of claim 1, wherein the source and drain contact are Ti/Au.
The graphene sensor of claim 1, comprising: a pair of Cr/Au contact pads.
The graphene sensor of claim 1, comprising: a signal analyzer to measure a noise power spectrum.
The graphene sensor of claim 1, comprising: an electrical circuit for a low frequency noise spectrum input.
The graphene sensor of claim 1, wherein the low- pass and/or the high-pass filter are configured to pass frequencies from 0.03 Hz to 100 KHz.
canceled
A graphene sensor for selective sensing of vapors, gases and biological agents, the graphene sensor comprising: a substrate; a dielectric substrate on an upper layer of the substrate; one or more ribbons of graphene on an upper layer of the dielectric substrate; a metal electrode acting as a source and drain contact; a pre-amplifier configured to amplify current fluctuations; and a low-pass and/or a high-pass filter configured to pass the amplified current fluctuations for analyzation.
The graphene sensor of claim 12, wherein the one or more graphene ribbons comprise a plurality of graphene ribbons.
The graphene sensor of claim 12, comprising: a signal analyzer to measure a noise power spectrum.
A method for selective detection of vapors, gases and biological objects with low frequency input as a sensing parameter using a graphene device, the method comprising: exposing the graphene device to at least one vapor, gas, and/or biological object, the graphene device comprising a substrate, a dielectric substrate on an upper layer of the substrate, a layer of graphene on an upper layer of the dielectric substrate, and a source and drain contact on an upper surface of the layer of graphene, a pre-amplifier configured to amplify current fluctuations, and a low-pass and/or a high-pass filter configured to pass the amplified current fluctuations for analyzation; and measuring a change in a noise spectra of the amplified current fluctuations of the graphene device.
The method of claim 16, comprising: measuring the change in the noise spectra of the graphene device with a signal analyzer.
A method for selective detection of vapors, gases and biological objects with low frequency input as a sensing parameter using a graphene device, the method comprising: exposing the graphene device to at least one vapor, gas, and/or biological object, the graphene device comprising a substrate, a dielectric substrate on an upper layer of the substrate, one or more ribbons of graphene on an upper layer of the dielectric substrate, a metal electrode acting as a source and drain contact, a pre-amplifier configured to amplify current fluctuations, and a low-pass and/or a high-pass filter configured to pass the amplified current fluctuations for analyzation; and Attorney Docket No. 0071220-000143 Application No. 14/209,620 Page 6 measuring a change in a noise spectra of the amplified current fluctuations of the graphene device.
The method of claim 17, comprising: measuring the change in the noise spectra of the graphene device with a signal analyzer.
Layer stacks claimed or described, ordered top of device to substrate.
back-gated graphene transistor/graphene sensor (layer)
graphene ribbon sensor
Materials described outside the worked examples.
graphene
C
p-type highly-doped Si wafer
Si
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1–10 K | — |
Voltage |
Related documents with shared materials, methods, properties, or citations.
300-nm thermally grown SiO₂
SiO₂
Cr/Au
Ti/Au
10-nm Cr/100-nm Au
| — |
Duration | 2–3 hours | — |
Duration | ≥ 1 seconds | — |
300-nm thermally grown SiO₂
SiO₂
Cr/Au
Ti/Au
10-nm Cr/100-nm Au
| — |
Duration | 2–3 hours | — |
Duration | ≥ 1 seconds | — |
300-nm thermally grown SiO₂
SiO₂
Cr/Au
Ti/Au
10-nm Cr/100-nm Au
| — |
Duration | 2–3 hours | — |
Duration | ≥ 1 seconds | — |
300-nm thermally grown SiO₂
SiO₂
Cr/Au
Ti/Au
10-nm Cr/100-nm Au
| — |
Duration | 2–3 hours | — |
Duration | ≥ 1 seconds | — |